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Supplier: Accuratus Corporation
Description: Silicon Carbide is the only chemical compound of carbon and silicon. It was originally produced by a high temperature electro-chemical reaction of sand and carbon. Silicon carbide is an excellent abrasive and has been produced and made into grinding wheels and
- Carbides / Carbide Ceramic Type: Silicon Carbide
- Shape / Form: Fabricated / Custom Shape
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Supplier: Fountyl Technologies Pte. Ltd.
Description: Silicon carbide chuck (also called wafer clamping), is industrial chuck commonly used in the semiconductor industry, with high temperature resistance, corrosion resistance, wear resistance and other characteristics. It is usually made of silicon carbide or alumina
- Chuck Geometry: Round
- Materials of Construction: Ceramic
- Type: Electrostatic Chuck
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Supplier: 3X Ceramic Parts Company Limited
Description: Corrosion Resistant SiC Silicon Carbide Ceramic Wafer Boat The Advantages of Using Ceramic Wafer Boat : 1.Very high Temperature Resistance to 3000 F ( 1650? ) 2. Super corrosion resistance to acids, solvents, salts, and organics, wear resistant 3. Easy to
- Carbides / Carbide Ceramic Type: Silicon Carbide
- Shape / Form: Fabricated / Custom Shape
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Supplier: CoorsTek
Description: semiconductor components cleaner, more durable, more effective. Let us help you choose the best semiconductor-grade material for your application: Aluminas (Al2O3) Aluminum Nitride (AlN) Graphite / Carbon (C) Quartz (SiO2) Silicon Carbides (SiC) Yttria (Y2O3)
- Applications: Chemical / Materials Processing, Wear Parts / Tooling
- Shape / Form: Wafer Carrier / Holder
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Supplier: Fountyl Technologies Pte. Ltd.
Description: guide rail, silicon carbide slide rail, silicon carbide vacuum suction cup, silicon carbide reflector, silicon carbide crossbeam, silicon carbide workpiece table, etc. the main function is to carry the wafer to perform
- Applications: Other
- Length: 62.99 inch
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Supplier: Fountyl Technologies Pte. Ltd.
Description: The application of silicon carbide ceramic beam: It is one of the core components of lithography machine, its main function is carrying the wafer follow a prescribed trajectory for high speed precision movement and action needed to complete the series of exposure, including the
- Applications: Other
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Supplier: CoorsTek
Description: CoorsTek provides wafer boats, pedestals, and custom wafer carriers for both vertical / column and horizontal configurations. Advanced ceramics deliver excellent thermal resistance and plasma durability while mitigating particles and contaminants. Semiconductor-grade silicon
- Applications: Other
- Carbides / Carbide Ceramic Type: Silicon Carbide
- Shape / Form: Fabricated / Custom Shape, Wafer Carrier / Holder
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Supplier: 3X Ceramic Parts Company Limited
Description: Silicon Carbide SiC Cantilever Paddle used in Automatic loading and handling in diffusion furnace Silicon carbide cantilever Paddle is a key component of semiconductor wafer loading system. Silicon carbide cantilever paddle used in photovoltaic new
- Carbides / Carbide Ceramic Type: Silicon Carbide
- Compressive / Crushing Strength: 261066 psi
- Density: 3.12 g/cc
- Shape / Form: Fabricated / Custom Shape
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Description: Ceramic wafer clamps are indispensible tools in semiconductor processing. They can be manufactured of high-purity alumina, zirconia, or silicon carbide, making them suited for high-temperature and corrosive environments.
- Applications: Electrical / HV Parts
- Shape / Form: Wafer Carrier / Holder
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Supplier: CoorsTek
Description: , dimensionally stable). RECOMMENDED LITHOGRAPHY & WAFER INSPECTION MATERIALS High-Purity Aluminas UltraClean™ Recrystallized Silicon Carbide CeraSiC, UltraSiC™ Direct Sintered Silicon Carbides
- Applications: Wear Parts / Tooling, Other
- Shape / Form: Fabricated / Custom Shape, Wafer Carrier / Holder
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Supplier: 3X Ceramic Parts Company Limited
Description: Silicon carbide carrier disk, silicon carbide etching disk, ICP etching disk Silicon carbide tray for LED etching (SiC tray) f 600mm is a special accessory for deep silicon etching (ICP etching machine) Wafer carrier, also known as wafer
- Carbides / Carbide Ceramic Type: Silicon Carbide
- Compressive / Crushing Strength: 261066 psi
- Density: 3.12 g/cc
- MOR / Flexural Strength: 56564 psi
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Description: A ceramic wafer chuck is a specialized tool employed in the semiconductor industry to hold wafers in a secure position. It functions as a stable platform that guarantees consistent contact and precise positioning of the wafer during many procedures, including lithography,
- Applications: Chemical / Materials Processing, Electrical / HV Parts
- Shape / Form: Wafer Carrier / Holder
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Supplier: Saint-Gobain Surface Conditioning Group
Description: AmberClean™ SWR Aqueous Silicon Wafer Cleaner AmberClean™ SWR is a biodegradable, aqueous cleaner which does not contain volatile organic compounds (VOCs). It is specifically formulated to flush and disperse ceramic, silicon and other lapping and slicing fines
- Aqueous / Water-based: Yes
- Features: Biodegradable, VOC Compliant
- Industry Applications: Semiconductor Wafer / Cleanroom
- Temperature (As Used): 150 F
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Supplier: Saint-Gobain Surface Conditioning Group
Description: AmberClean™ SWB Aqueous Silicon Wafer Cleaner AmberClean™ SWB is a biodegradable, aqueous cleaner which does not contain volatile organic compounds (VOCs). It is specifically formulated to flush and disperse ceramic, silicon and other lapping and slicing fines
- Aqueous / Water-based: Yes
- Features: Biodegradable, VOC Compliant
- Industry Applications: Semiconductor Wafer / Cleanroom
- Temperature (As Used): 150 F
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Supplier: Chonghong Industries(Microwork)Ltd.
Description: aircraft and spacecraft for imaging, laser targeting and communications applications. Silicon carbide(SiC) is also used in commercial applications such as lightweight scan mirrors, semiconductor wafer handling, and reflective imaging systems.
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Supplier: CoorsTek
Description: durability and hardness, dimensionally stable). RECOMMENDED LITHOGRAPHY & WAFER INSPECTION MATERIALS High-Purity Aluminas UltraClean™ Recrystallized Silicon Carbide CeraSiC, UltraSiC™ Direct Sintered Silicon Carbides
- Applications: Other
- Material Type: Other
- Shape / Form: Wafer Carrier / Holder
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Supplier: Accuris
Description: Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices Part 3: Test method for defects using photoluminescence
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Supplier: Accuris
Description: Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices Part 1: Classification of defects
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Supplier: Accuris
Description: Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection
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Supplier: Accuris
Description: Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects
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Description: IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the
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Description: IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy),
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Description: Technical Data Hexoloy® SA SiC is a pressureless, sintered form of alpha silicon carbide, with a density greater than 98 percent theoretical. It has a very fine grain structure (4 - 10 microns) for excellent wear resistance and contains no free silicon, which makes it highly
- Applications: Abrasive / Erosive Wear Protection, Chemical / Materials Processing, Refractory / High Temperature Materials, Corrosion Protection, Wear Parts / Tooling
- Coeff. of Thermal Expansion (CTE): 4.02 µm/m-C
- Compressive / Crushing Strength: 565644 psi
- Density: 3.1 g/cc
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Description: Hexoloy® SA sintered silicon carbide provides outstanding shape and thermal properties for the production of semiconductor components. Hexoloy® SA sintered silicon carbide is used in the production of components for semiconductor wafer processing such as vacuum
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Description: Material High-purity aluminum oxide (Al2O3), silicon carbide (SiC), or silicon nitride (Si3N4). Advanced porous ceramic structure for uniform vacuum distribution. Features The porosity is high: An important feature of porous ceramics is that they have more uniform and
- Chuck Geometry: Round
- Diameter: 4 to 12 inch
- Materials of Construction: Ceramic
- Type: Vacuum Chuck
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Description: IEC 63068-4:2022(E) provides a procedure for identifying and evaluating defects in as-grown 4H-SiC (Silicon Carbide) homoepitaxial wafer by systematically combining two test methods of optical inspection and photoluminescence (PL). Additionally, this document exemplifies optical
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Description: IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and
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Supplier: Fountyl Technologies Pte. Ltd.
Description: Ring groove chuck (groove chuck) is a commonly used industrial chuck in the semiconductor industry, with high temperature resistance, corrosion resistance, wear resistance and other characteristics. Usually made of silicon carbide or alumina ceramic materials. It is widely used in
- Chuck Geometry: Round
- Materials of Construction: Ceramic
- Type: Electrostatic Chuck
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Supplier: Nanotronics Imaging
Description: The Nanotronics Imaging nSpec® is an inspection device designed for high resolution microscopy and detection of wafer defects. With particular application in silicon carbide and Galium Nitride epi wafers, the nSpec® offers fast quantification and qualification of defects
- Applications: Semiconductor Wafers
- Form Factor: Wafer Probing System
- Measurement Capability: Defects / ADC
- Mounting / Loading: Manual Loading
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Supplier: Zygo Corporation
Description: optical contacting "Super" polishing, down to <0.1 nm RMS roughness Stage Component Materials Glasses (Fused Silica, etc.) Variety of Ceramics, Silicon Carbide (SiC), etc. Low thermal expansion materials (Zerodur®, ULE®, CLEARCERAM®
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Description: under demanding material strength requirements. For industries facing added material strength requirements we offer a unique silicon carbide coating on carbon composites that provides superior strength and oxidation resistance.
- Capacity (Mass Basis): Over 8.82E-6 lbs
- Capacity (Volume Basis): Over 3.53E-9 cubic feet
- Chemicals / Chemical Products: Lubricants / Greases
- Form: Bulk Solids / Granules, Nanomaterials / Nanoparticles, Powders
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Description: fluids and gases. The resulting benefits include wafer consistency due to uniform surface temperatures. In addition, we have mastered the deposition of silicon carbide coatings on pyrolytic graphite that provide unequalled protection in particularly harsh environments.
- Additional Services / Processes: Material Selection / Design Assistance, New / OEM Parts, Recoating / Refinishing, Research & Development, Specialty / Other
- Cleaning / Parts Washing: Burn-off / Thermal Cleaning, Pressure / Spray Washing
- Coating Process: Abrasives / Superabrasives, Ceramic Coating, Chemical Finish / Conversion, Dry Lubricant Coating, Hardfacing, Painting, Thin Film Coating
- Finishing / Surface Treatment: Mirror Finishing, Sanding / Grinding, Other
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Supplier: Infineon Technologies AG
Description: also designed with IRF150P221 | N-Channel Power MOSFET IMZA65R027M1H | Silicon Carbide MOSFET Discretes IMZ120R060M1H | Silicon Carbide MOSFET Discretes IRF150P221 | N-Channel Power MOSFET IMZA65R027M1H | Silicon
- Diode Applications: Power Diode
- Diode Type: Schottky Barrier Diodes
- IF: 20000 mA
- IR: 0.0085 mA
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Supplier: Infineon Technologies AG
Description: 1200 V Silicion Carbide Schottky diode in a DPAK real2pin package The CoolSiC™ Schottky diode generation 5 1200 V, 2 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now
- Diode Applications: Power Diode
- Diode Type: Schottky Barrier Diodes
- IF: 2000 mA
- IR: 0.0012 mA
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Supplier: Infineon Technologies AG
Description: 1200 V Silicon Carbide Schottky diode in TO-247-3 package The CoolSiC™ Schottky diode generation 5 1200 V, 40 A in a TO-247-3 package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with
- Diode Applications: Power Diode
- Diode Type: Schottky Barrier Diodes
- IF: 40000 mA
- IR: 0.0230 mA
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Supplier: Infineon Technologies AG
Description: The 5th Generation CoolSiC™ Automotive Schottky Diode and represents Infineon leading edge technology for Silicon Carbide Schottky Barrier diodes Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load
- Diode Applications: Power Diode
- Diode Type: Schottky Barrier Diodes
- IF: 12000 mA
- IR: 0.0020 mA
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, contamination, deformation under high temperatures, and material wear. The Wafer Pin Silicon Carbide (SiC) Chuck addresses these challenges with a high-performance material and advanced design, ensuring wafers remain stable, clean, and accurately positioned during processing (read more)
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Indicates content that may require registration and/or purchase.
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http://dspace.mit.edu/bitstream/handle/1721.1/28348/55871802-MIT.pdf?sequence=2
Q.-Y. Tong et al., " Silicon carbide wafer bonding," J. Electrochem. Soc., Vol. 142, No. 1, p. 232-236, 1995.
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SiC and GaN Semiconductors Report - World - 2013
Norstel is a full service provider with solutions for conducting and insulating silicon carbide wafers and a range ofepitaxial solutions.
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Optimization of structural perfection of 4H -polytype silicon carbide ingots
High quality perfect silicon carbide wafers were obtained, characterized by a micropore and basal dislocation densities of 5–40 and 103–104 cm–2, respec tively.
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Electrical and topographical characterization of aluminum implanted layers in 4H silicon carbide
Therefore, the surface of the silicon carbide wafer is very effectively protected against evaporation.
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High‐Temperature Morphological Evolution of Lithographically Introduced Cavities in Silicon Carbide
The silicon carbide wafer was then etched using an argon-ion beam.
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Single crystal 6H-SiC MEMS fabrication based on smart-cut technique
After being bonded to a carrier substrate, the micro-cavities will cause the silicon carbide wafer to split along the peak concentration by a high-temperature annealing step [9], thus resulting in a single crystal 6H-SiC layer with a thickness of …
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MRS Online Proceedings Library - Demonstration of Hybrid Silicon-on-Silicon Carbide Wafers and Electrical Test Structures with Improved Thermal Performance - C...
• Demonstration of Hybrid Silicon-on- Silicon Carbide Wafers and Electrical Test Structures with Improved Thermal PerformanceDemonstration of Hybrid Silicon-on-Silicon Carbide Wafers and Electrical Test Structures with Improved Thermal Performance .
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Beveling of Silicon Carbide Wafer by Plasma Chemical Vaporization Machining
• The Preparation of World-Class Single Crystal Silicon Carbide Wafers Using High Rate Chemical Mechanical Planarization Slurries p.839 .