-
Supplier: 3X Ceramic Parts Company Limited
Description: φ150mm ) silicone wafer , thickness 675 um . They want this part in 99% alumina ceramic . We don’t have the standard wafer boats for customer wafer size , but we custom made it . Before this projects , we have made a 99% alumina horizontal wafer boat , it is for
- Material Type: Carbide Materials, Silicon Carbide
- Shape / Form: Fabricated / Custom Shape
-
Supplier: Fountyl Technologies Pte. Ltd.
Description: Silicon carbide chuck (also called wafer clamping), is industrial chuck commonly used in the semiconductor industry, with high temperature resistance, corrosion resistance, wear resistance and other characteristics. It is usually made of silicon carbide or alumina
- Materials: Ceramic
- Chuck Type: Electrostatic Chuck, Wafer Chuck
- Jaws: None / NA
- Features: Other / Specialty Chuck
-
Supplier: Fountyl Technologies Pte. Ltd.
Description: The application of silicon carbide ceramic beam: It is one of the core components of lithography machine, its main function is carrying the wafer follow a prescribed trajectory for high speed precision movement and action needed to complete the series of exposure, including the
- Material Type: Carbide Materials, Silicon Carbide
- Features: Other
-
-
Supplier: Fountyl Technologies Pte. Ltd.
Description: guide rail, silicon carbide slide rail, silicon carbide vacuum suction cup, silicon carbide reflector, silicon carbide crossbeam, silicon carbide workpiece table, etc. the main function is to carry the wafer to perform
- Length: 62.99216 inch
- Alumina / Aluminate Type: Alumina / Aluminum Oxide
- Features: Other, Silicon Carbide
-
Supplier: 3X Ceramic Parts Company Limited
Description: mm, 2550 mm, 2660 mm, etc Silicon carbide cantilever propeller is mainly used in the (diffusion) coating process of polycrystalline silicon wafer or monocrystalline silicon wafer in diffusion furnace, and plays a role in the bearing and transportation of
- Density: 3.119998030883578 g/cc
- Compressive / Crushing Strength: 261,066.3108429546 psi
- Material Type: Carbide Materials, Silicon Carbide
- Shape / Form: Fabricated / Custom Shape
-
Supplier: Accuratus Corporation
Description: Silicon Carbide is the only chemical compound of carbon and silicon. It was originally produced by a high temperature electro-chemical reaction of sand and carbon. Silicon carbide is an excellent abrasive and has been produced and made into grinding wheels and
- Material Type: Carbide Materials, Silicon Carbide
- Shape / Form: Fabricated / Custom Shape
-
Supplier: 3X Ceramic Parts Company Limited
Description: Silicon carbide carrier disk, silicon carbide etching disk, ICP etching disk Silicon carbide tray for LED etching (SiC tray) φ 600mm is a special accessory for deep silicon etching (ICP etching machine) Wafer carrier, also known as wafer
- Density: 3.119998030883578 g/cc
- MOR / Flexural Strength: 56,564.36734930683 psi
- Compressive / Crushing Strength: 261,066.3108429546 psi
- Material Type: Carbide Materials, Silicon Carbide
-
Supplier: Accuris
Description: Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects
-
Supplier: Accuris
Description: Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices Part 1: Classification of defects
-
Supplier: Chonghong Industries(Microwork)Ltd.
Description: Silicon Carbide (SiC) is an advanced composite ceramic material,which is developed for applications in Aerospace, Semiconductor Lithography, and Astronomy. Silicon Carbide(SiC)l has excellent thermal and mechanical stability.its physical and electronic properties make it
-
Supplier: Accuris
Description: Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection
-
Supplier: Accuris
Description: Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices Part 3: Test method for defects using photoluminescence
-
Supplier: Saint-Gobain Surface Conditioning Group
Description: AmberClean™ SWR Aqueous Silicon Wafer Cleaner AmberClean™ SWR is a biodegradable, aqueous cleaner which does not contain volatile organic compounds (VOCs). It is specifically formulated to flush and disperse ceramic, silicon and other lapping and slicing fines from substrate
- Temperature (As Used): 150 F
- Concentration (As Used, by Volume): 1 to 5 %
- Type: Aerosol / Contact Cleaner, Alkaline Cleaner (11 to 12.5 pH), Aqueous / Water-based, Cleaner / Cleaning Agent
- Features: Biodegradable, VOC Compliant
-
Description: IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy),
-
Description: IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the
-
Supplier: CoorsTek
Description: CoorsTek provides wafer boats, pedestals, and custom wafer carriers for both vertical / column and horizontal configurations. Advanced ceramics deliver excellent thermal resistance and plasma durability while mitigating particles and contaminants. Semiconductor-grade silicon
- Material Type: Carbide Materials, Silicon Carbide
- Shape / Form: Fabricated / Custom Shape, Wafer Carrier / Holder
- Features: Other
-
Description: Hexoloy® SA sintered silicon carbide provides outstanding shape and thermal properties for the production of semiconductor components. Hexoloy® SA sintered silicon carbide is used in the production of components for semiconductor wafer processing such as vacuum
-
Description: IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and
-
Description: IEC 63068-4:2022(E) provides a procedure for identifying and evaluating defects in as-grown 4H-SiC (Silicon Carbide) homoepitaxial wafer by systematically combining two test methods of optical inspection and photoluminescence (PL). Additionally, this document exemplifies optical
-
Description: Ceramic wafer clamps are indispensible tools in semiconductor processing. They can be manufactured of high-purity alumina, zirconia, or silicon carbide, making them suited for high-temperature and corrosive environments.
- Features: Alumina / Aluminum Oxide, Specialty Ceramic
- Applications: Electrical / HV Parts
- Specialty Ceramic Type: Silicon Carbide, Tungsten Carbide (WC), Zirconia
- Shape / Form: Wafer Carrier / Holder
-
Description: A ceramic wafer chuck is a specialized tool employed in the semiconductor industry to hold wafers in a secure position. It functions as a stable platform that guarantees consistent contact and precise positioning of the wafer during many procedures, including lithography,
- Features: Alumina / Aluminum Oxide, Specialty Ceramic
- Applications: Chemical / Materials Processing, Electrical / HV Parts
- Specialty Ceramic Type: Silicon Carbide, Silicon Nitride, Tungsten Carbide (WC)
- Shape / Form: Wafer Carrier / Holder
-
Supplier: CoorsTek
Description: LITHOGRAPHY & WAFER INSPECTION MATERIALS High-Purity Aluminas UltraClean™ Recrystallized Silicon Carbide CeraSiC, UltraSiC™ Direct Sintered Silicon Carbides
- Material Type: Alumina / Aluminum Oxide, Carbide Materials, Silicon Carbide
- Shape / Form: Fabricated / Custom Shape, Wafer Carrier / Holder
- Features: Other
- Applications: Wear Parts / Tooling
-
Supplier: CoorsTek
Description: End effectors, also referred to as semiconductor handling "blades", are the robot's hand to handle and move semiconductor wafers between positions. So end effectors must be dimensionally precise and thermally stable, while having a smooth, abrasion-resistant surface to safely handle
- Features: Alumina / Aluminum Oxide, Carbide Materials, Silica / Silicate Materials, Specialty Ceramic
- Specialty Ceramic Type: Aluminum Nitride, Quartz, Silicon Carbide, Yttria
- Applications: Chemical / Materials Processing, Wear Parts / Tooling
- Shape / Form: Wafer Carrier / Holder
-
Supplier: CoorsTek
Description: stable). RECOMMENDED LITHOGRAPHY & WAFER INSPECTION MATERIALS High-Purity Aluminas UltraClean™ Recrystallized Silicon Carbide CeraSiC, UltraSiC™ Direct Sintered Silicon Carbides
- Applications: Chemical / Materials Processing
- Features: Dielectric / Electrical Insulation, Other
- Shape / Form: Wafer Carrier / Holder
-
Supplier: Micro-Epsilon Group
Description: The IMS5420-TH absolute interferometer opens up new perspectives in the industrial thickness measurement of monocrystalline silicon wafers and silicon carbide wafers and comparable materials that are transparent for a wavelength range of 1,100 nm. Due to its
- Resolution: 1 nm
- Operating Temperature: 50 to 122 F
- User Interface: Analog Control, Digital Interface
- Remote Interface: Computer Interface
-
Supplier: Fountyl Technologies Pte. Ltd.
Description: production equipment to absorb, fix, transfer and handle silicon wafers, wafer and various workpieces and materials.
- Materials: Ceramic
- Chuck Type: Electrostatic Chuck, Wafer Chuck
- Jaws: None / NA
- Features: Other / Specialty Chuck
-
Description: Technical Data Hexoloy® SA SiC is a pressureless, sintered form of alpha silicon carbide, with a density greater than 98 percent theoretical. It has a very fine grain structure (4 - 10 microns) for excellent wear resistance and contains no free silicon, which makes it highly
- Density: 3.1 g/cc
- Max Use / Curie Temperature: 1,900 C
- Thermal Conductivity: 125.6 W/m-K
- Coeff. of Thermal Expansion (CTE): 4.02 µm/m-C
-
Supplier: Beijing Grish Hitech Co., Ltd.
Description: GRISH CO(Cerium Oxide) AO(Aluminum Oxide) SC(Silicon Carbide) slurry series are mainly made of processed high-quality abrasives. They provide predominant finishing result on optical material, substrates wafer, optical fiber connectors, crystal compounds, ceramics and hard alloys
- Compound / Abrasive Type: Aluminum Oxide, Cerium Oxide, Silicon Carbide
- Grading System: Micron Graded
- Materials / Substrates Finished: Ophthalmic / Optical Materials, Semiconductors / Electronics (Wafers)
- Type: Polishing
-
Description: Material High-purity aluminum oxide (Al₂O₃), silicon carbide (SiC), or silicon nitride (Si₃N₄). Advanced porous ceramic structure for uniform vacuum distribution. Features The porosity is high: An important feature of porous ceramics is that they have more uniform and
- Diameter: 4 to 12 inch
- Materials: Ceramic
- Chuck Geometry: Round
- Chuck Type: Vacuum Chuck, Wafer Chuck
-
Supplier: Nanotronics Imaging
Description: The Nanotronics Imaging nSpec® is an inspection device designed for high resolution microscopy and detection of wafer defects. With particular application in silicon carbide and Galium Nitride epi wafers, the nSpec® offers fast quantification and qualification of defects
- Measurements: Defects / ADC
- Mounting / Loading: Manual Loading
- Technology: Optical / Imaging System
- Applications: Semiconductor Wafers
-
Supplier: Zygo Corporation
Description: Wafer production technology requires extreme precision components, whether for reticle stages, wafer stages or imaging technologies. ZYGO is a leading supplier of stage positioning components, serving the semiconductor industry and emerging EUV technologies through multiple custom
-
Supplier: Beijing Grish Hitech Co., Ltd.
Description: GRISH has corresponding polishing processes and consumables for compound semiconductors, including SiC(silicon carbide), AlN(aluminum nitride), GaN(gallium nitride), GaAs(gallium arsenide), InP(indium phosphide), etc.
- Grit Size: 200 to 500
- Type: Polishing
- Materials / Substrates Finished: Semiconductors / Electronics (Wafers)
- Form: Slurry
-
Supplier: Infineon Technologies AG
Description: supplies (UPS) Wired Communication Designers who used this product also designed with IRF150P221 | N-Channel Power MOSFET IMZA65R027M1H | Silicon Carbide MOSFET Discretes IMZ120R060M1H | Silicon Carbide MOSFET Discretes IRF150P221 | N-Channel Power MOSFET IMZA65R027M1H |
- VF: 1.5 volts
- IF: 20,000 mA
- IR: 0.0085 mA
- IFSM: 198 amps
-
Description: The resulting benefits include wafer consistency due to uniform surface temperatures. In addition, we have mastered the deposition of silicon carbide coatings on pyrolytic graphite that provide unequalled protection in particularly harsh environments.
- Coating Capabilities: Abrasives / Superabrasives, Ceramic Coating, Chemical Finish / Conversion, Dry Lubricant Coating, Hardfacing, Painting, Thin Film Coating
- Industry Served: Aerospace, Castings / Cast Metal, Chemical / Material Processing, Electronics, Military Specification, OEM / Industrial
- Services: Burn-off / Thermal Cleaning, Material Selection / Design Assistance, Mirror Finishing, New / OEM Parts, Pressure / Spray Washing, Recoating / Refinishing, Research & Development, Sanding / Grinding
- Materials: Carbide, Ceramic, Composites
-
Supplier: Micross Components, Inc.
Description: SemiQ designs, develops and manufactures Silicon Carbide (SiC) Power Semiconductors as well as 150mm SiC epitaxial wafers. SiC Diodes and MOSFETs are available in both discrete and module form factors as well as bare die and wafer form and provide important performance
Find Suppliers by Category Top
Featured Products Top
-
Product Overview Used in plasma etch chambers, CVD systems, and ion implantation equipment for wafer clamping and lift-pin support during processing. Fountyl silicon carbide wafer pin chucks integrate the clamping surface and lift pins into a single high-purity sintered (read more)
Browse Wafer Chucks Datasheets for Fountyl Technologies Pte. Ltd. -
Silicon carbide wafer pins and chucks are used in plasma etch chambers, CVD systems, and ion implantation equipment for wafer support, lifting, and clamping during processing. The material must withstand aggressive plasma chemistry while maintaining dimensional stability and minimizing particle (read more)
Browse Wafer Chucks Datasheets for Fountyl Technologies Pte. Ltd. -
Silicon Carbide Tube — High-Performance SiC Ceramic for Harsh Industrial Environments Product Overview (read more)
Browse Industrial Ceramic Materials Datasheets for Shenzhen Great Precision Ceramic CO., LTD. -
Product Overview Used as structural support members in precision metrology equipment, wafer inspection stages, coordinate measuring machines, and optical platforms where frame rigidity and dimensional stability directly determine measurement accuracy. Fountyl silicon (read more)
Browse Silicon Carbide and Silicon Carbide Ceramics Datasheets for Fountyl Technologies Pte. Ltd. -
Product Overview Fountyl ceramic guide rails are manufactured from high-performance alumina (Al?O? 99.5%) and silicon carbide (SiC 99%) ceramics for precision linear motion applications. These advanced ceramic materials offer high (read more)
Browse Aluminum Oxide and Alumina Ceramics Datasheets for Fountyl Technologies Pte. Ltd. -
Semiconductor fabrication faces critical challenges such as inconsistent wafer clamping, thermal non-uniformity, and compatibility issues with diverse materials like silicon, sapphire, and silicon carbide. Engineers often struggle with process (read more)
Browse Chucks Datasheets for Fountyl Technologies Pte. Ltd. -
, contamination, deformation under high temperatures, and material wear. The Wafer Pin Silicon Carbide (SiC) Chuck addresses these challenges with a high-performance material and advanced design, ensuring wafers remain stable, clean, and accurately positioned during processing (read more)
Browse Wafer Chucks Datasheets for Fountyl Technologies Pte. Ltd. -
.5%) and silicon carbide (SiC 99%) with precision-machined fork geometry. The slim ceramic fork provides the stiffness required for high-speed wafer transfer while minimizing robot arm inertia. Edge grip features and vacuum ports are machined into the fork to support different wafer handling methods (read more)
Browse Industrial Ceramic Materials Datasheets for Fountyl Technologies Pte. Ltd. -
We specialize in the precision engineering of advanced technical ceramics, including alumina, silicon carbide, and (read more)
Browse Wafer Chucks Datasheets for Fountyl Technologies Pte. Ltd. -
advanced Alumina (Al?O?) and Silicon Carbide (SiC) material technology, these chucks offer a uniform microstructure with controlled pore sizes (typically 2 to (read more)
Browse Wafer Chucks Datasheets for Fountyl Technologies Pte. Ltd.
More Information Top
-
http://dspace.mit.edu/bitstream/handle/1721.1/28348/55871802-MIT.pdf?sequence=2
Q.-Y. Tong et al., " Silicon carbide wafer bonding," J. Electrochem. Soc., Vol. 142, No. 1, p. 232-236, 1995.
-
SiC and GaN Semiconductors Report - World - 2013
Norstel is a full service provider with solutions for conducting and insulating silicon carbide wafers and a range ofepitaxial solutions.
-
Optimization of structural perfection of 4H -polytype silicon carbide ingots
High quality perfect silicon carbide wafers were obtained, characterized by a micropore and basal dislocation densities of 5–40 and 103–104 cm–2, respec tively.
-
Electrical and topographical characterization of aluminum implanted layers in 4H silicon carbide
Therefore, the surface of the silicon carbide wafer is very effectively protected against evaporation.
-
High‐Temperature Morphological Evolution of Lithographically Introduced Cavities in Silicon Carbide
The silicon carbide wafer was then etched using an argon-ion beam.
-
Single crystal 6H-SiC MEMS fabrication based on smart-cut technique
After being bonded to a carrier substrate, the micro-cavities will cause the silicon carbide wafer to split along the peak concentration by a high-temperature annealing step [9], thus resulting in a single crystal 6H-SiC layer with a thickness of …
-
MRS Online Proceedings Library - Demonstration of Hybrid Silicon-on-Silicon Carbide Wafers and Electrical Test Structures with Improved Thermal Performance - C...
• Demonstration of Hybrid Silicon-on- Silicon Carbide Wafers and Electrical Test Structures with Improved Thermal PerformanceDemonstration of Hybrid Silicon-on-Silicon Carbide Wafers and Electrical Test Structures with Improved Thermal Performance .
-
Beveling of Silicon Carbide Wafer by Plasma Chemical Vaporization Machining
• The Preparation of World-Class Single Crystal Silicon Carbide Wafers Using High Rate Chemical Mechanical Planarization Slurries p.839 .
Indicates content that may require registration and/or purchase.