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Supplier: ODG (Origin Data Global)
Description: 20V 4A 36mO@10V 1 N-Channel SC70-3 MOSFETs ROHS
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Supplier: DigiKey
Description: N-Channel 30V 40A (Ta), 140A (Tc) 6.2W (Ta), 78W (Tc) Surface Mount 8-DFN (5x6)
- Package Type: Other
- Polarity: N-Channel
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT TRANS GP BJT NPN 50V 0.15A 6PIN
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT TRANS GP BJT NPN 50V 0.15A 5PIN
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT DUAL NPN 50V 150MA SOT-457
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR
- Transistor Type: Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: POWER BIPOLAR TRANSISTOR, PNP
- Polarity: PNP, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: PNP TRANSISTOR
- Package Type: SOT23, Other
- Polarity: PNP, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: NPN TRANSISTOR
- Package Type: SOT23, Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 40V 200mW 100@10mA,1V 150mA NPN SOT-523-3 Bipolar Transistors - BJT ROHS
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 863654-BC858BDW1T1 Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand
- Package Type: SOT3
- Transistor Type: Bipolar RF Transistors
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Supplier: Rochester Electronics
Description: Dual Bipolar Transistor
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Description: TRANSISTOR
- Transistor Type: MOSFET
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Supplier: Radwell International
Description: TRANSISTOR NPN, 70 V, 1.5A, T0-39 GOLD LEADS, 150 MHZ . FREE 2 YEAR RADWELL WARRANTY
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Supplier: Acme Chip Technology Co., Limited
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
- Transistor Type: General Purpose BJT
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Supplier: Infineon Technologies AG
Description: HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: RF Bipolar Transistors NPN Low Distort Amp
- Noise Figure: 1.8 dB
- Output Power: 1.2 watts
- Packing Method: Tape Reel, Other
- Polarity: NPN
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Package Type: TO-92
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Supplier: Rochester Electronics
Description: RF Small Signal Bipolar Transistor
- Package Type: Other
- Packing Method: Tape Reel, Other
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: CEL Win Source Part Number: 052964-UPA810T-T1 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 7dB to 9dB Frequency - Transition: 4.5GHz Transistor Polarity: 2 NPN (Dual) Noise Figure (dB Typ @ f): 1.2dB to 2.5dB @ 1GHz Family Name: UPA810T
- IC(max): 100 milliamps
- Noise Figure: 1.2 dB
- Operating Frequency: 4500 MHz
- PD: 200 milliwatts
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 808672-BSP52T1 Packaging: Cut Tape (CT) Part Status: Obsolete Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited)
- Package Type: SOT3
- Packing Method: Tape Reel, Other
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Supplier: ROHM Semiconductor USA, LLC
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
- Package Type: Other
- Polarity: PNP
- Transistor Grade / Operating Range: Commercial
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Supplier: Accuris
Description: TRANSISTOR ASSEMBLY: 10525770
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Supplier: Richardson RFPD
Description: The AAT4616 SmartSwitch is a current limited P-channel MOSFET power switch designed for high side load switching applications. This switch operates with inputs ranging from 2.4V to 5.5V, making it ideal for both 3V and 5V systems. An integrated, highly accurate current-limiting circuit protects the
- Package Type: Other
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Nexperia B.V.
Description: NPN low VCEsat transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5140T Features and benefits Low collector-emitter saturation voltage High current capabilities Improved device reliability due to
- Package Type: SOT23, Other
- Polarity: NPN
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Supplier: ROHM Semiconductor GmbH
Description: 2SAR513RHZG is a middle power transistor with Low VCE(sat), suitable for low frequency amplifier. It is a highly reliable product for automotive.
- Package Type: Other
- Polarity: PNP
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: Win Source Electronics
Description: Win Source Part Number: 978773-UPA608T(0)-T1 -A Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF Series: * Package: Bulk Standard Package: 3,000 ECCN: EAR99 Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited
- Package Type: SOT3
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT 180V 1A NPN HI VLTGE LO VCESAT TRANSISTOR
- IC(max): 1000 milliamps
- Number of Transistors in the Chip: 1
- PD: 300 milliwatts
- Packing Method: Tape Reel, Other
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: Trans RF MOSFET N-CH 65V 3-Pin NI-360 T/R
- Polarity: N-Channel
- Transistor Type: MOSFET RF Transistors
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Description: Integrated Circuits (ICs) - Transistors - IGBTs
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 1000@4V,4A 120V PNP 8A 1.75W DPAK Darlington Transistors ROHS
- IC(max): 8000 milliamps
- PD: 1750 milliwatts
- Polarity: PNP
- TJ: -65 to 150 C
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Supplier: Rochester Electronics
Description: NPN Bipolar Darlington Transistor
- Package Type: SOT223, Other
- Packing Method: Tape Reel, Other
- Polarity: NPN
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Supplier: Rochester Electronics
Description: Dual Bipolar Transistor
- Package Type: Other
- Packing Method: Tape Reel, Other
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Supplier: Utmel Electronic Limited
Description: RF JFET Transistors Super Lo Noise HJFET
- Number of Transistors in the Chip: 1
- PD: 165 milliwatts
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
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Supplier: Renesas Electronics Corporation
Description: The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8.5GHz, while the PNP transistors have an fT of 7GHz. Both types
- Package Type: Other
- Polarity: NPN
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Datasheets history of inquiries : Datasheets for Electronic Components and Semiconductors
T1829 - 1 . .... transistor .
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Datasheets history of inquiries : Datasheets for Electronic Components and Semiconductors
Pages: [ 1 ] 2 [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14]. .... transistor . .... T1829 .