T1829 1 Transistors

Description: 20V 4A 36mΩ@10V 1 N-Channel SC70-3 MOSFETs ROHS

Description: MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD Product overview: UPA807T-T1 from NEC Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit

• Transistor Type: Bipolar RF Transistors

Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Bipolar RF Transistors. This

• Noise Figure: 1.4 dB
• P_D: 200 milliwatts
• T_J: 150 C
• Transistor Type: Bipolar RF Transistors

Description: Manufacturer: ON Semiconductor Win Source Part Number: 863654-BC858BDW1T1 Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Quantity

• Transistor Type: Bipolar RF Transistors
• Package Type: SOT3

Description: Manufacturer: ON Semiconductor Win Source Part Number: 864135-BF720T1 Operating Temperature Range: 150°C (TJ) Features: Bipolar (BJT) Transistor NPN 300 V 100 mA 60MHz 1.5 W Surface Mount SOT-223 (TO-261) Package: Bulk Package: TO-261-4, TO-261AA Mounting: Surface Mount Part Status:

• T_J: 150 C
• Transistor Type: Bipolar RF Transistors
• Polarity: NPN
• Features: Other

Description: Manufacturer: NEC Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 973311-UPA504T-T1 Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Shortage RoHS: Non-Compliant

Description: Manufacturer: ON Semiconductor Win Source Part Number: 886510-MUN5212T1 Series: MUN5212T1 Features: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount SC-70 (SOT323) Package: Bulk Package: SC-70, SOT-323 Mounting: Surface Mount Part Status: Obsolete

• Transistor Type: Bipolar RF Transistors
• Polarity: NPN
• Features: Other
• Package Type: SOT3, SOT323

Description: Bipolar Transistors - BJT BIP S0T223 PNP 0.5A 300V

• Transistor Type: Bipolar RF Transistors

Description: Bipolar Transistors - Pre-Biased SMUN5114DW1T1G

• Transistor Type: Bipolar RF Transistors

Description: 40V 150mW 100@10mA,1V 200mA 2 NPN SOT-363 Bipolar Transistors - BJT ROHS

• I_C(max): 200 milliamps
• V_CEO: 40 volts
• f_T: 300 MHz
• P_D: 150 milliwatts

Description: TRANSISTOR BIPOLAR .9GHZ 3-SMINI

• I_C(max): 60 milliamps
• V_CEO: 12 volts
• Operating Frequency: 5,000 MHz
• Output Power: 0.1 watts

Description: N-Channel 30V 40A (Ta), 140A (Tc) 6.2W (Ta), 78W (Tc) Surface Mount 8-DFN (5x6)

• Polarity: N-Channel
• Features: Other

Description: TRANSISTOR, BIPOLAR, NPN, 80V, 1A/SOT223; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:1A; Power Dissipation:1.5W; Transistor Mounting:Surface Mount; No. of Pins:4Pins RoHS Compliant: Yes

Description: POWER BIPOLAR TRANSISTOR, PNP

• V_CEO: 80 volts
• Output Power: 1.5 watts
• T_J: -65 to 150 C
• Number of Transistors in the Chip: 1

Description: RF Transistor 2 NPN (Dual) 10V 65mA 7GHz 200mW Surface Mount SOT-363

• Polarity: NPN
• Features: Other

Description: TRANSISTOR, NPN, 30V, 1A, SOT-323T; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:320MHz; Power Dissipation Pd:400mW; DC Collector Current:1A; DC Current Gain hFE:270hFE; Transistor Case RoHS Compliant: Yes

Description: High Voltage PNP Bipolar Transistor

• I_C(max): 150 milliamps
• V_CEO: 300 volts
• P_D: 150 milliwatts
• T_J: 150 C

Description: Bipolar (BJT) Transistor PNP 300V 50mA 60MHz 1.5W Surface Mount SOT-223 (TO-261)

• Features: Other
• Polarity: PNP

Description: Bipolar Transistors - BJT 180V 1A NPN HI VLTGE LO VCESAT TRANSISTOR

• V_CEO: 180 volts
• I_C(max): 1,000 milliamps
• P_D: 300 milliwatts
• T_J: 150 C

Description: TRANSISTOR, NPN, 30V, 1.5A, SOT-346T; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:300MHz; Power Dissipation Pd:500mW; DC Collector Current:1.5A; DC Current Gain hFE:270hFE; Transistor CaseRoHS Compliant: Yes

Description: DUAL BIPOLAR TRANSISTOR

• Features: Bulk Pack, Other
• Transistor Type: General Purpose BJT

Description: TRANSISTOR ASSEMBLY: 10525770

Description: Transistor Output Optocouplers Phototransistor Out Single CTR 40-80%

Description: SMALL SIGNAL BIPOLAR TRANSISTOR

• Features: Bulk Pack, Other
• Transistor Type: General Purpose BJT

Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and

• Package Type: TO-92

Description: RF Bipolar Transistors NPN High Frequency

• I_C(max): 35 milliamps
• V_CEO: 10 volts
• Power Gain: 9.5 dB
• Noise Figure: 1.8 dB

Description: of the standard dual-in-line package. The lead profile is designed to be compatible with standard surface mount processes. The ACPL-M43T has enhanced features to meet automotive application environments. This diode-transistor optocoupler houses a new AlGaAsP for higher LED reliability and

• Isolation Voltage: 3,750 volts
• Collector Emitter Breakdown Voltage: 5 volts
• Operating Temperature: -40 to 125 C
• Input: DC

Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.

• Transistor Grade / Operating Range: Commercial
• Features: Other
• Polarity: PNP

Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.

• Transistor Type: MOSFET, Power MOSFET

Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.

• Transistor Grade / Operating Range: Commercial
• Polarity: NPN
• Features: Other

Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.

• Transistor Grade / Operating Range: Commercial
• Polarity: NPN, PNP
• Features: Other

Description: This 65 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz.

• Power Gain: 22.5 dB
• Output Power: 65 watts
• Operating Frequency: 716 to 960 MHz
• Features: Other

Description: Optoisolator Transistor Output 3750Vrms 1 Channel 4-SOP

• Isolation Voltage: 3,750 volts
• Input: DC
• Output: Phototransistor
• Mounting Option: Surface Mount

Description: MELSEC- A Series - CC- Link Small Remote I/O Unit (transistor output) Terminal Block

• Data Acquisition: I/O Module

Description: NPN low VCEsat transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5140T Features and benefits Low collector-emitter saturation voltage High current capabilities Improved device reliability due to reduced heat generation Qualified according to

• Features: Other
• Package Type: SOT23