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Supplier: Advanced Technology Group, Inc.
Description: of raw material that can be quickly configured to your specific requirements. We invite you to explore our product offerings and contact us for any questions regarding your latest project. Transistor Outlines are classic packages that are still being used in today’s applications. We
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Supplier: Utmel Electronic Limited
Description: NPN,TRANSISTORS,SOT-89 PACKAGE
- Polarity: NPN
- Features: Other
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Supplier: Utmel Electronic Limited
Description: PNP,TRANSISTORS,SOT-223 PACKAGE
- Polarity: PNP
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Description: Qnnect, formerly Hermetic Solutions Group has extensive experience in manufacturing power packaging, including high thermal dissipation power packages and power transistor outline packages. We have the largest selection of open tooling, plus custom capabilities for any size
- Features: Other
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Supplier: JC Cherry, Inc.
Description: Modular Socket for Power Semiconductor Package For Power Transistor For SIP Package For Intelligent Power Module(IPM) - Able to place with various layout according to the package. - Kelvin contact type. - High temperature type. - We also design and manufacture sockets
- Contact Resistance: 20 milliohms
- Operating Temperature: -55 to 150 C
- Socket Type: DIP, SIP
- Contact Plating: Gold Plating
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Supplier: Utmel Electronic Limited
Description: TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
- Polarity: NPN
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Supplier: Utmel Electronic Limited
Description: Transistor Output SSR, 1-Channel, 4000V Isolation, PLASTIC, SURFACE MOUNT PACKAGE-6
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Supplier: Accuris
Description: TEST SET, TRANSISTOR TS-1836( )/U, PACKAGING OF
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Supplier: Solid State Devices, Inc.
Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This
- Features: Other
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Supplier: Materion Corporation
Description: Materion Corporation provides ceramic air cavity packages that are industry standard outlines for RF Power Transistors. These packages offer proven performance and reliability. The cost-effective packages are excellent platforms for wireless applications in the 500 MHz to
- Shape / Form: Bar Stock
- Features: Other
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Supplier: Schott Japan
Description: transmission and reception components. Transistor Outlines (TO) and Microelectronic Packages Hermetically sealed housings for high frequency components come in a range of designs, and enable large volumes of data to be transmitted in existing structures - particularly in TO
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Category: Transistors Series: BFR181 Transistor Type: Bipolar Technology: Si Transistor Polarity: NPN Package / Case: SOT-323 Packaging: Reel Mounting Style: SMD/SMT Emitter Base Voltage (VEBO): 2 V
- Transistor Type: Bipolar RF Transistors
- Polarity: NPN
- Features: Other, Tape Reel
- Package Type: SOT3
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Supplier: Infineon Technologies AG
Description: NPN Silicon Digital Transistors Summary of Features Switching circuit, inverter circuit, driver circuit Built in bias resistor (R1= 1 kΩ, R2= 10 kΩ) BCR523U: Two (galvanic) internal isolated transistors with good matching in one package Pb-free (RoHS compliant) package
- VCEO: 50 volts
- VCBO: 50 volts
- fT: 100 MHz
- hfe: 70
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Supplier: Infineon Technologies AG
Description: NPN / PNP Silicon Switching Transistor Array Summary of Features High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN / PNP transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101
- IC(max): 10 to 200 milliamps
- VCEO: 40 volts
- VCBO: 40 volts
- fT: 250 MHz
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Supplier: Infineon Technologies AG
Description: NPN Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=22kΩ, R2=22kΩ) BCR141S : Two internally isolated transistors with good matching in one multichip package BCR141S: For orientation in reel
- VCEO: 50 volts
- VCBO: 50 volts
- fT: 130 MHz
- hfe: 50
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Supplier: Mini-Circuits
Description: SMT MMIC, Low Noise, Medium Power, Linear, pHEMT Transistor, 45 MHz to 6000 MHz, SOT-343 Style Package
- Minimum Gain: 8.3 dB
- Maximum Gain: 22.3 dB
- Noise Figure: 0.4 to 1.5 dB
- Operating Temperature: -40 to 85 C
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Supplier: Infineon Technologies AG
Description: NPN Silicon Digital Transistor Summary of Features Switching in circuit, inverter, interface circuit, drive circuit Built in bias resistor (R1 = 10 kΩ, R2 = 10 kΩ) BCR133S: Two internally isolated transistors with good matching in one multichip package BCR133S: For orientation
- VCEO: 50 volts
- VCBO: 50 volts
- fT: 130 MHz
- hfe: 30
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Supplier: Accuris
Description: TRANSISTOR, NPN, SILICON, SWITCHING, THROUGH HOLE MOUNT PACKAGE, TYPE 2N3013, QUALITY LEVELS JAN AND JANTX
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Supplier: Materion Corporation
Description: CuPacks™ by Materion Microelectronics and Services deliver outstanding performance for cutting edge, high power Si and GaN transistors, and meet the industry’s demands for low thermal resistance and low RF loss. These unique packages feature 0.2 mm thick copper leads and base, as well
- Shape / Form: Bar Stock
- Features: Other
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT PNP,Transistors,SOT-89 Package
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 885834-MPQ7091 Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 92 pct. Supply and Demand Status: Limited Quantity
- Transistor Type: Bipolar RF Transistors
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Win Source Part Number: 863869-BCR158 Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited
- Transistor Type: Bipolar RF Transistors
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 850896-BC337 Features: Bipolar (BJT) Transistor 45 V 800 mA 625 mW Package: Bulk Part Status: Obsolete Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 81 pct. Supply and
- Transistor Type: Bipolar RF Transistors
- Package Type: SOT3
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor,
- Transistor Type: Bipolar RF Transistors
- Features: Other
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Supplier: Mini-Circuits
Description: SMT MMIC, Low Noise, Medium Power, pHEMT Transistor, 45 MHz to 6000 MHz, 3x3 mm QFN Style Package
- Minimum Gain: 8.4 dB
- Maximum Gain: 21.3 dB
- Noise Figure: 0.4 to 1.7 dB
- Operating Temperature: -40 to 85 C
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Supplier: Radwell International
Description: TRANSISTOR TO99 PACKAGE. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Mini-Circuits
Description: DRAIN 1 4 SOURCE GATE SOURCE 2 3 GATE SOURCE SOT-343 (SC-70) PACKAGE Function Pin Number Description Source 2 & 4 Source terminal, normally connected to ground Gate 3 Gate used for RF Input Drain 1 Drain used for RF output * Enhancement mode Pseudomorphic High Electron Mobility
- Minimum Gain: 7.6 dB
- Maximum Gain: 20.9 dB
- Noise Figure: 0.5 to 1.8 dB
- Operating Temperature: -40 to 85 C
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Supplier: Mini-Circuits
Description: Mini-Circuits’ TAV1-331+ is a MMIC D-PHEMT* transistor with an operating frequency range from 10 to 4000 MHz. This model combines high gain with extremely low noise figure, resulting in lower overall system noise. Low NF and IP3 performance make it an ideal choice for sensitive receivers in
- Minimum Gain: 12 dB
- Maximum Gain: 24.6 dB
- Noise Figure: 0.5 to 1 dB
- Operating Temperature: -40 to 85 C
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Supplier: Richardson RFPD
Description: The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL
- Output Power: 300 watts
- Power Gain: 17 dB
- Operating Frequency: 0 to 45 MHz
- Transistor Type: MOSFET RF Transistors
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Supplier: Accuris
Description: TRANSISTOR, UNITIZED, DUAL, NPN, SILICON THROUGH HOLE MOUNT PACKAGE, TYPE 2N2060 QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
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Supplier: Nexperia B.V.
Description: Resistor-equipped PNP transistor with two diodes on one chip in a SOT353 (SC-88A) plastic package. Stabilized output current of between 15 uA and 50 mA by connection of an external resistor between pins 4 and 5. Features and benefits One chip integrated constant current source Output
- Transistor Grade / Operating Range: Automotive
- Features: Other
- Polarity: PNP
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Supplier: ROHM Semiconductor USA, LLC
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
- VCEO: 12 volts
- IC(max): 500 milliamps
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
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Supplier: Broadcom Inc.
Description: ATF-35143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 surface mount plastic package.
- Features: Other
- Transistor Type: PHEMT
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Supplier: ROHM Semiconductor GmbH
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
- VCEO: -50 volts
- IC(max): -150 milliamps
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
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Supplier: ROHM Semiconductor GmbH
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
- VCEO: -12 volts
- IC(max): -500 milliamps
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
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The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
Browse RF Transistors Datasheets for Qorvo -
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
Browse Transistors Datasheets for Win Source Electronics -
a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide (read more)
Browse Transistors Datasheets for Win Source Electronics -
QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
Browse Transistors Datasheets for Win Source Electronics -
(DPAK) package. Designed for demanding industrial and consumer electronics, this device delivers low on-resistance and fast switching speeds, significantly improving energy efficiency and thermal (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
Nexperia extend the 650 V IGBT portfolio with the release of 15 & 30 A discrete IGBTs in TO220-FP & D2PAK packages. Based on Nexperia’s third-generation technology with carrier stored trench-gate and field-stop (FS) structures, these devices offer optimized (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Nexperia B.V.
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TO-3P/220/247/254/257/258/264 Aluminum Nitride Ceramic Thermal Pads For MOSFET Transistor IGBT Transistor Heat Sink
contact. The pads are made of ceramic materials such as alumina ceramic and aluminum nitride, which help in providing enhanced thermal conductivity and excellent insulation performance. Typical applications include Power Devices, Integrated Circuit (IC) chip packaging heat conduction, MOSFET Transistor
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Turning up the Heat on Reliability and Reduce the Chances of a Thermal Failure with Diodes, Bipolar Transistors and MOSFETs that are Specified Up to 175°C
Reducing the chances of a thermal failure. Nexperia offers a wide and growing range of diodes, bipolar transistors and MOSFETs that have a junction temperature specified up to 175 °C. Some things never change in the electronics industry. Designers are always being asked to squeeze more
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How Copper Clip Makes Perfect Packages for the Future of Power
We shipped more than 1.7 billion LFPAK devices in 2021, including MOSFETs and bipolar power transistors in LFPAK56 and its later derivatives from small size of 3 mm x 3 mm LFPAK33 to 8 mm x 8 mm LFPAK88. With the new CCPAK1212 now adding to the copper clip success story, we expect this technology
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RF Test Sockets: The Key to the Effective Testing of High-Frequency Devices
With rapid and constant advances in silicon technology, today's IC packages are continually changing both inside and out. The inside of the package is holding more transistors per square millimeter. The outside of the package is constantly being trimmed and reconfigured to approach the size
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Smart Computing Article - Laplink to latency
for their separate inventions in 1959. ICs are used in a variety of devices and are categorized by the number of transistors or active circuits they hold. LSI refers to a package of 100 to 5,000 transistors on one single chip. With this advancement from SSI (small-scale integration), which held 30 or fewer
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Introduction to Analog Electronics
techniques, better packaging to improve interconnections, increased speed, and use in new applications. Today, a transistor behaves according to the same principles as when, on the afternoon of December 23, 1947, Shockley, Bardeen and Brattain invented the first such device at the Bell Telephone
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RC Model Aircraft Motor Control
As modern MOSFET transistors are developed with lower ON resistance and smaller packages, Electronic Speed Controls (ESC) follow. By using a microcontroller and a few small MOSFETs, high performance speed controls can be built with advanced features in small packages. This application note
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
Higher memory prices lift Micron to $341 million net income Kyocera to buy majority of CDMA chips from Qualcomm as part of acquisition Semtech rolls out 11 new ECL devices Philips puts two high-voltage transistors in 'mini' package Summit offers Visual IP on Windows PCs C-Cube powers Cisco video
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ROHM Co. 2SA1634 Series Datasheets. 2SD2033A, 2SC4595, 2SD1755, 2SD1833, 2SB1353A, 2SC5112, 2SB1350, 2SD1720, 2SD2038, 2SB1356, 2SB1292, 2SC4575, 2SB1496, 2SB1...
TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE .
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Electrical characterization of a RF power transistor ceramic package including multiple wirebonds
Abstract This article presents an approach for modeling of RF power transistor packages including bondwires.
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Equivalent-circuit modeling and verification of metal-ceramic packages for RF and microwave power transistors
The metal pedestal preserves the bond wire profiles, as in the actual transistor package .
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Modeling GaN power transistors
[8] M. Rudolph, W. Heinrich, "Assessment of power- transistor package models: distributed versus lumped approach," submitted to IEEE MTT-S Inti.
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The RF Power Behind Design Innovation | Semiconductor content from Microwaves & RF
The majority of high power transistor packages generally have two or four leads, although new multi-stage high power RF ICs that incorporate higher functionality have more leads.
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Structural Integrity and Reliability in Electronics
4.1 Discrete Diode and Transistor Packaging Concepts .
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http://www.nxp.com/documents/handbook/RF_Fundamentals.pdf
A MOS capacitor is used, and it can only be used in transistor packages with two emitter ‘bridges’: one, the normal elevated bridge; the other, an integrated bridge on the beryllia disc to which the capacitor is soldered.
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http://www.nxp.com/documents/handbook/SC19_RF_TRANS_PACKAGES_1.pdf
RF and microwave transistor packages .
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