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Supplier: Accuris
Description: SEMICONDUCTOR DIODE, SILICON, UHF MIXER TYPE 1N82AG
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Supplier: Accuris
Description: Semiconductor Diode, Silicon, UHF Mixer Type 1N82AG
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Supplier: Allied Electronics, Inc.
Description: Silicon Small Signal Schottky Diodes
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Supplier: Infineon Technologies AG
Description: Silicon Schottky Diodes Summary of Features For mixer applications in VHF/UHF range For high-speed switching application Pb-free (RoHS compliant) package Potential Applications Wireless Communications Satellite Receivers Base Stations High Speed Data Networks
- VF: 0.34 to 0.6 volts
- IF: 130 mA
- VR: 4 volts
- Diode Applications: Detector, Mixer
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Supplier: RS Components, Ltd.
Description: Diode,mixer,7V,UHF,SOT23
- Pin Count: 3
- Diode Applications: Mixer, Switching
- Features: Other, SOT23
- RoHS Compliant: RoHS Compliant
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Supplier: Nexperia B.V.
Description: Planar Schottky barrier double diode in a SOT23 small plastic SMD package. Features and benefits Low forward voltage Small SMD package Low capacitance. AEC-Q101 qualified Applications UHF mixer Sampling circuits Modulators Phase detection.
- VF: 600 to 0.6 volts
- VR: 4 volts
- IR: 0.25 mA
- Diode Applications: Mixer
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: RF Diode Schottky 6V 3-Pin S-Mini / DIODE (UHF~S BAND MIXER/DETECTOR APPLICATIONS) Product overview: 1SS154 from Toshiba Electronic Devices and Storage Corporation is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge
- Diode Applications: Rectifier Diode
- Diode Type: Schottky Barrier Diodes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Silicon Uhf Band Mixer Diode DO-35 Product overview: 1SS86-E from Renesas Electronics Corporation is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and
- IO: 0.03 amps
- Diode Applications: Rectifier Diode
- RoHS Compliant: RoHS Compliant
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: RF Diode Schottky 6V 0.03A 3-Pin S-Mini / DIODE (VHF~UHF MIXER APPLICATION) Product overview: 1SS271 from Toshiba Electronic Devices and Storage Corporation is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression,
- Diode Applications: Rectifier Diode
- Diode Type: Schottky Barrier Diodes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: For mixer applications in VHF/UHF range / Diode RF Schottky 4V 150mW 3-Pin SOT-23 T/R Product overview: BAT17E6327 from Infineon Technologies is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit
- Diode Applications: Rectifier Diode
- Diode Type: Schottky Barrier Diodes
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Supplier: Skyworks Solutions, Inc.
Description: Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of the low capacitance junctions. Beam-lead Schottky barrier mixer diodes are
- Diode Applications: Mixer
- Diode Type: Schottky Barrier Diodes
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Supplier: RS Components, Ltd.
Description: Schottky Diode 4V 130mA SOT23
- Pin Count: 3
- Diode Applications: Mixer, Rectifier Diode
- Features: Other, SOT23, Schottky
- RoHS Compliant: RoHS Compliant
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Supplier: Rochester Electronics
Description: RF Mixer and Detector Schottky Diode
- Diode Applications: Detector, Mixer
- Features: Other
- Diode Type: RF Diodes, Schottky Barrier Diodes
- RoHS Compliant: RoHS Compliant
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Supplier: Skyworks Solutions, Inc.
Description: The Skyworks SMS3926-099 family of Si Schottky diodes are configured as ring quads intended for use in double-balanced mixers. Each ring quad die is comprised of four Schottky junctions, connected anode to cathode. SMS3926-099 is composed of low barrier diodes, which can be
- VF: 0.01 volts
- Diode Applications: Mixer
- Diode Type: Schottky Barrier Diodes
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Supplier: Broadcom Inc.
Description: HSMS-8xxx is a family of low cost microwave Schottky diodes that are specifically designed for use at X/Ku-bands and are ideal for DBS and VSAT down converter applications.VBR=4 V, CT=0.26 pF, RD=14Ohms, Vf @ 1 mA=350 mV
- VF: 0.25 volts
- IF: 1 mA
- Tj: -65 to 150 C
- PD: 75 milliwatts
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Supplier: SemiGen
Description: SemiGen’s Silicon Schottky Diodes are designed for applications through 40Ghz. The special process technology utilizes various metal schemes to provide excellent performance of Low, Medium, and High Barrier applications. The end result is a low resistance diode with tightly controlled
- VF: 0.6 volts
- Diode Applications: Detector, Mixer, Modulation, Switching
- Features: Other
- Diode Type: Schottky Barrier Diodes
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Supplier: SemiGen
Description: SemiGen’s Silicon Schottky Diodes are designed for applications through 40Ghz. The special process technology utilizes various metal schemes to provide excellent performance of Low, Medium, and High Barrier applications. The end result is a low resistance diode with tightly controlled
- VF: 0.4 volts
- Diode Applications: Detector, Mixer, Modulation, Switching
- Features: Other
- Diode Type: Schottky Barrier Diodes
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Supplier: Broadcom Inc.
Description: General purpose Schottky diode in a broad range of package configurations. Optimised for High voltage clamp or analog DC switch applications. For low breakdown applciations, like detectors or mixers, please refer to HSMS-282X. For low flicker (1/F) noise applications refer to
- VF: 0.4 volts
- IF: 1 mA
- IR: 0.0002 mA
- Tj: 150 C
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Supplier: SemiGen
Description: SemiGen’s Silicon Schottky Diodes are designed for applications through 40Ghz. The special process technology utilizes various metal schemes to provide excellent performance of Low, Medium, and High Barrier applications. The end result is a low resistance diode with tightly controlled
- VF: 395 volts
- Diode Applications: Detector, Mixer, Modulation, Switching
- Diode Type: Schottky Barrier Diodes
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Supplier: Broadcom Inc.
Description: The HSMS-282x family of schottky diodes are the best all-round choice for most applications. These products featuring low series resistance, low forward voltage at all current levels, and good RF characteristics. Applications include clamping, low frequency mixers, biased detectors,
- VF: 0.34 volts
- IF: 10 mA
- VR: 1 volts
- IR: 0.0001 mA
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Supplier: MACOM
Description: At MACOM we produce a wide variety of Schottky diodes as your best choice for microwave circuit detector and mixer applications ranging from DC to 80 GHz. These devices are available in die form, SURMOUNTTM, flip chip, plastic and ceramic packaging.
- VF: 0.09 to 1,200 volts
- Diode Applications: Detector, Mixer
- Features: Other
- Diode Type: Schottky Barrier Diodes
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Supplier: Newark, An Avnet Company
Description: MIXER DIODE, 10mA, 7V, SOT-23; Diode Case Style:SOT-23; Diode Configuration:Common Anode; Diode Type:Schottky; Filter Terminals:Surface Mount; Forward Current If(AV):10mA; Forward Voltage VF Max:600mV; Leaded Process Compatible:Yes RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: MIXER DIODE, SERIES, 0.01A, SOT-23; Diode Configuration:Single Pair Series; Repetitive Peak Reverse Voltage:7V; Average Forward Current:10mA; Forward Voltage Max:600mV; Reverse Recovery Time:5ns; Forward Surge Current:600mA RoHS Compliant: Yes
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Page 6. Semiconductor parts with 481 in root number
4 V, UHF mixer diode .
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The design of a mobile radio receiver using a direct conversion architecture
Mixers have been designed with devices whose barrier capac- itance at zero bias, C,,, is as great as 1.0 pF; the maximum typically encountered for UHF mixer diodes .
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Correspondence
Some Characteristics of Tunnel- Diode UHF Mixers * .
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Subject Index (Sep. 1983 Transactions)
8227-29 UHF mixers; cf. Schottky-barrier diode mixers UHF modulation/demodulation direct microwave modulation .
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A C‐band microstrip varactor‐tuned reflection phase shifter employing UHF general‐purpose diodes
Similar results to the above were repeated while using various VHF/ UHF specified mixer diodes , operated as var- actors under reverse bias conditions.
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Microwave applications of integrated-circuit techniques
Thesetests were made in equipment designed for UHF mixer - diode evaluation.
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Past, Present and Future Trends of TV Tuner Design in Europe
AUTODYNE UHF MIXER PIN DIODE AGC COMBINED WITH HIGH CURRENT BIPOLAR AMPLIFIER MOS FET MIXER & AMPLIFIER There were three solutions employed for equally good local and fringe area signal reception.