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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 160W @ 100us/10%/50V ¦ 420 to 450 Operating Frequency ¦ Internal Input Impedance Pre-matched Device ¦ No Internal Output Match for Efficiency Optimization ¦ Depletion Mode Device - Negative Gate Voltage and Bias Sequencing Required ¦ Specified For Use Under
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: Renesas Electronics Corporation
Description: The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil's bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics that have been maximized through careful
- Package Type: Other
- Polarity: NPN
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Supplier: Utmel Electronic Limited
Description: TRANS NPN BIPO VHF-UHF MCP4
- Polarity: NPN
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Supplier: Utmel Electronic Limited
Description: TRANS NPN BIPO VHF-UHF SSFP
- Polarity: NPN, Other
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Supplier: Utmel Electronic Limited
Description: TRANS NPN BIPO VHF-UHF MCP
- Polarity: NPN, Other
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Supplier: Accuris
Description: The Measurement of Small-Signal VHF-UHF Transistor Admittance Parameters
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Supplier: Accuris
Description: TRANSISTOR, NPN, SILICON, VHF/UHF AMPLIFIER TYPE 2N2708
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Supplier: Accuris
Description: Measurement of Small-Signal VHF-UHF Transistor Admittance Parameters
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Supplier: Utmel Electronic Limited
Description: TRANS NPN VHF/UHF 25V SOT-723
- Polarity: NPN, Other
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Polarity: NPN
- Transistor Type: General Purpose BJT
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Polarity: NPN
- Transistor Type: General Purpose BJT
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Supplier: Accuris
Description: Measurement of Small-Signal VHF-UHF Transistor Short-Circuit Forward Current Transfer Ratio
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN VHF/UHF AM
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: VHF/UHF NPN SILICON TRANSISTOR
- Package Type: SOT23, Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT VHF TO UHF WIDEBAND AMPLIFIER
- Transistor Type: Bipolar RF Transistors
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Supplier: Radwell International
Description: TRANSISTOR BJT NPN VHF/UHF AM TO-39. FREE 2 YEAR RADWELL WARRANTY
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Supplier: ODG (Origin Data Global)
Description: TRANS NPN VHF/UHF SS 25V TO92
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: RF POWER UHF BAND N-CHANNEL FET
- Transistor Type: Bipolar RF Transistors
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Supplier: Wolfspeed
Description: Wolfspeed’s CGH09120F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE amplifier applications. The transistor is supplied
- Package Type: Other
- Transistor Type: HEMT
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Polarity: PNP
- Transistor Type: General Purpose BJT
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Radwell International
Description: NPN UHF AMP SOT23 MARKED "R44". FREE 2 YEAR RADWELL WARRANTY
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Supplier: Radwell International
Description: TRANSISTOR, N-CHANNEL, DUAL GATE, MOS-FIELDEFFECT TETRODE, DEPLETION MODE, 50B DIN, INPUT-AND MIXERSTAGES ESPECIALLY FOR UHF TV TUNERS UP TO 900MHZ. FREE 2 YEAR RADWELL WARRANTY
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Description: UHF/VHF MIXER NPN TRANSISTOR
- Transistor Type: General Purpose BJT
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed avionics transistor part number IB0607S10 is designed for UHF-Band avionics systems operating at 653 to 687 . While operating in class C mode under 20us pulse conditions at VCC= 50V, this common base device supplies a minimum of 12 watts of peak pulse power. The
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed radar transistor device part number IB450S300 is designed for UHF radar systems operating at 450 . While operating in class C mode this common base device supplies a minimum of 300 watts of peak pulse power under the conditions of 30ìs pulse width and 10% duty
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed radar transistor device part number IB450S500 is designed for UHF radar systems operating at 450 . While operating in class C mode this common base device supplies a minimum of 500 watts of peak pulse power under the conditions of 30ìs pulse width and 10% duty
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: RF MOSFET Transistors MV9 UHF 13.6V
- Transistor Type: MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: RF JFET Transistors GaN HEMT UHF-2.5GHz, 120 Watt
- Transistor Type: JFET
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Supplier: Rochester Electronics
Description: UHF power LDMOS transistor
- Package Type: Other
- Transistor Type: Power MOSFET
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Supplier: Rochester Electronics
Description: UHF power MOS transistor
- Package Type: Other
- Transistor Type: Power MOSFET
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Supplier: ODG (Origin Data Global)
Description: BLF1046 - UHF POWER LDMOS TRANSI
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Acme Chip Technology Co., Limited
Description: TRANS NPN VHF/UHF SS 25V TO92
- Transistor Type: General Purpose BJT
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Supplier: Richardson RFPD
Description: The NPT2021 GaN HEMT is a wideband transistor optimized for DC - 2.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W in an industry standard plastic package with bolt down flange. The NPT2021 is ideally suited for defense
- Package Type: Other
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: RF POWER TRANSISTORS FOR UHF
- Transistor Type: Darlington
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Supplier: Richardson RFPD
Description: CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small plastic SMT package 4.4mm x 6.5mm. The transistor is a broadband device with no internal input or output match which allows for the agility to apply to a wide range of frequencies from
- Package Type: Other
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Supplier: Infineon Technologies AG
Description: NPN Silicon RF Transistor Summary of Features High linearity low noise RF transistor 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA For UHF / VHF applications Driver for multistage amplifiers For linear broadband and antenna
- Package Type: SOT23, Other
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Supplier: Rochester Electronics
Description: BLF521 - UHF Power VDMOS Transistor
- Package Type: Other
- Transistor Type: Power MOSFET
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Supplier: Rochester Electronics
Description: UHF Oscillator and VHF Mixer NPN Transistor
- Package Type: TO-220, Other
- Polarity: NPN
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Supplier: Richardson RFPD
Description: This high power transistor is designed for use in UHF TV broadcast applications. The device has an integrated input matching network for better power distribution and is ideal for use in both analog and digital TV transmitters.
- Package Type: Other
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Supplier: Richardson RFPD
Description: This high power transistor is designed for use in UHF TV broadcast applications. The device has an integrated input matching network for better power distribution and is ideal for use in both analog and digital TV transmitters.
- Package Type: Other
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Description: TRANS NPN VHF-UHF 70A 10V SSFP
- Transistor Type: General Purpose BJT
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Supplier: Renesas Electronics Corporation
Description: The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8.5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low noise,
- Package Type: Other
- Polarity: NPN
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Supplier: Renesas Electronics Corporation
Description: The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over
- Package Type: Other
- Polarity: NPN
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Supplier: RS Components, Ltd.
Description: BFG21W UHF power transistor - Discrete Semiconductors - Bipolar Transistors
- Package Type: Other
- Polarity: NPN
- Transistor Type: General Purpose BJT
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Supplier: RS Components, Ltd.
Description: NPN VHF/UHF Transistor SOT-23 - Discrete Semiconductors - Bipolar Transistors
- Package Type: SOT23, Other
- Polarity: NPN
- Transistor Type: General Purpose BJT
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Supplier: RS Components, Ltd.
Description: BFG21W UHF power transistor - Discrete Semiconductors - Bipolar Transistors
- Package Type: Other
- Polarity: NPN
- Transistor Type: General Purpose BJT
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Heteromagnetic Microelectronics
The equivalent circuit of Gummel–Poon’s model of the bipolar UHF transistor is presented in Fig. 5.1, where the basic notation [39–41] is retained.
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1997 Combined Index
Nishijima, M., + , MWSYM 97 1155-1158 vol.3 UHF technology; cf. UHF circuits; UHF devices; UHF frequency conversion; UHF measurements; UHF modulation UHF transistors ; cf. UHF bipolar transistors; UHF FETs UHF transmitters DECT, open loop archit., bipolar transmitter IC.
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Ultralinear UHF power transistors for CATV applications
In ordertoobtain improved linearity performanceof UHF transistors for CATV applications one should thus eliminatecurrent density and temperaturegradients across the active chip area.
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Subject Index
UHF transistors ; cf. UHF bipolar transistors; UHF field effect transistors UHF tubes .
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Motorola MMBFJ310 Series Datasheets. MMBFJ310, MMBT404, MMBT918, MMBFJ310LT1, MMBT404A, MMBFJ309LT1 Datasheet.
NPN silicon VHF/ UHF transistor . in 3-pin 318-02 package.
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Subject Index, Jun. 1981
’using GaAs MESF Ts; Niclas, Karl 1 .; T-MTT v28 n3 Mar 80172-179 UHF transistor amplifier design using large-signal scattering parameters: I-G Hz, 18-W amplifier; ~ighlon, .
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1997 Index
Shaeffer, D.K., + , J-SC May 97 745-759 UHF transistors ; cf. UHF bipolar transistors UHF transmitters Si-bipolar variable attenuator for PHS transmitter, 1.9-GHz.
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1996 Combined Index IEEE Transactions on Microwave Theory and Techniques, Vol. 44, and IEEE MTT-S Sponsored Conferences
UHF technology; cf. UHF circuits; UHF frequencyconversion; UHF meas- urements; UHF modulatioddemodulation UHF transistors ; cf. UHF bipolartransistors;UHF FETs UHF transmitters .
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Subject Index
Lu, S.-S., + , T-MTT Feb 01 333-340 Transistors; cf. Bipolar transistors; Field effect transistors; Microwave transistors; UHF transistors Transition metal alloys; cf. Iron alloys; Nickel alloys Transition metal compounds; cf. Scandium compounds; Yttrium compounds Transition metals; cf. Copper; Niobium Transit …
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Amorphous-Si emitter heterojunction UHF power transistors for handy transmitter
Schematic drawing of a one-emitter heterojunction UHF transistor .