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Supplier: Renesas Electronics Corporation
Description: The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8.5GHz, while the PNP transistors have an fT of 7GHz. Both types
- Package Type: Other
- Polarity: NPN
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Supplier: ROHM Semiconductor USA, LLC
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
- Package Type: Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial
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Supplier: ROHM Semiconductor USA, LLC
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Package Type: SOT323, Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial
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Supplier: ROHM Semiconductor USA, LLC
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Package Type: Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial
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Supplier: ROHM Semiconductor USA, LLC
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Package Type: Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial
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Supplier: Utmel Electronic Limited
Description: RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Polarity: N-Channel
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Supplier: ODG (Origin Data Global)
Description: ULTRA HIGH FREQUENCY TRANSISTOR
- Package Type: Other
- Polarity: NPN, PNP, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Accuris
Description: MICROCIRCUIT, LINEAR, ULTRA HIGH FREQUENCY, ALL NPN TRANSISTOR ARRAY, MONOLITHIC SILICON
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Package Type: Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Package Type: Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Package Type: Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Package Type: Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial
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Description: ULTRA HIGH FREQUENCY TRANSISTOR
- Transistor Type: General Purpose BJT
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Supplier: Acme Chip Technology Co., Limited
Description: ULTRA-HIGH FREQUENCY TRANSISTOR
- Transistor Type: General Purpose BJT
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Supplier: Accuris
Description: MICROCIRCUIT, LINEAR, RADIATION HARDENED, ULTRA HIGH FREQUENCY, NPN-PNP COMBINATION TRANSISTOR ARRAY, MONOLITHIC SILICON
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Supplier: Comdel, Inc.
Description: maintenance Class “C” linear design assures stability ETL Marked and SEMI F47 compliant Control circuitry ensures consistency during high VSWR conditions Output transistors are beta-matched to assure reliability Broadband, low “Q” circuits inhibit “squeeging” and self-resonant
- DC Output Power: 1000 watts
- Features: Adjustable Frequency
- Form Factor: Rack Mount
- Output Frequency: 2 to 80 MHz
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Supplier: Radwell International
Description: DISCONTINUED BY MANUFACTURER, RF SMALL SIGNAL BIPOLAR TRANSISTOR, 0.008A I(C), 1-ELEMENT, ULTRA HIGH FREQUENCY BAND, SILICON, NPN, SOT-23. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Rochester Electronics
Description: RF Small Signal Bipolar Transistor, Ultra High Frequency Band, NPN
- Package Type: SOT23, Other
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Supplier: Rochester Electronics
Description: RF Small Signal Bipolar Transistor, Ultra High Frequency Band, NPN, TO-92
- Package Type: TO-92, Other
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Supplier: Rochester Electronics
Description: RF Small Signal Bipolar Transistor, Ultra High Frequency Band, NPN, TO-92
- Package Type: TO-92, Other
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Supplier: Rochester Electronics
Description: RF Small Signal Bipolar Transistor, 0.035A, Ultra High Frequency Band, NPN
- Package Type: SOT323, Other
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Supplier: Littelfuse, Inc.
Description: Optimized for low conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT
- Package Type: TO-247, Other
- Transistor Type: IGBT
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Supplier: Linear Systems
Description: The SD210DE/214 and SST210/214 are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video and high-frequency applications. The SD214DE and SST214 are normally used for ±10-V analog switching. These MOSFETs utilize lateral construction to achieve low
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Supplier: ODG (Origin Data Global)
Description: RF ULTRA HIGH FREQUENCY BAND, N-
- Package Type: Other
- Polarity: Other
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Richardson RFPD
Description: Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobili ty-transistor (HEMT) in LGA with 2.3 mm x 3.3 mm package size Features AEC-Q101 Qualified Ultra-High Switching Frequency and Ultra-Low Rds
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Supplier: Nexperia B.V.
Description: Dual ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits Low
- Package Type: Other
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Supplier: Infineon Technologies AG
Description: The GS-065-030-6-LR is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency. Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal
- Package Type: Other
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Supplier: Richardson RFPD
Description: Low Saturation Voltage Short Circuit Withstand Rated Low Tail Current High Frequency Switching RoHS Compliant Ultra Low Leakage Current
- Package Type: TO-247, Other
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Supplier: RS Components, Ltd.
Description: key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.
- Package Type: Other
- Polarity: NPN
- Transistor Type: General Purpose BJT
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Supplier: Richardson RFPD
Description: Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss ""Miller"" capacitance. The
- Package Type: Other
- rDS(on): 0.1300 ohms
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Supplier: Broadcom Inc.
Description: Ultra low noise PHEMT packaged in a 1.4mm x 1.2mm x 0.7mm thin miniature leadless package. Its small size, high linearity and low noise figure is optimized for the design of hybrid module or first or second stage of basestation LNA. The device is also suitable for applications in
- Package Type: Other
- Transistor Grade / Operating Range: Other
- Transistor Type: PHEMT
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Supplier: Richardson RFPD
Description: 650V 150A Full-Bridge Module This 650V 150A GaN E-mode full-bridge Power Module provides ultra-low ESW (switching losses), ultra-small system form factor, and low RDS(on). The module is designed for high-efficiency high switching frequency applications such as PV
- Category: Development Board
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Supplier: Infineon Technologies AG
Description: barrier diodes in CoolSiC™ Hybrid discrete further reduces switching losses at almost unchanged dv/dt and di/dt values. The Kelvin emitter TO-247 4pin package provides ultra-low inductance to the gate-emitter control loop further improving switching performance especially at high
- Package Type: TO-247, Other
- Packing Method: Shipping Tube / Stick Magazine, Other
- Switching Speed: 10 to 30 kHz
- VCE(on): 650 volts
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Description: Silicon nitride substrates offer exceptional heat resistance, ultra-high hardness, and fracture toughness, thus exhibiting outstanding mechanical properties under high-frequency vibration or high temperature circumstances. As a result, they are frequently used in industries like
- Applications: Corrosion Protection, Electrical / HV Parts, Electronics / RF-Microwave
- Density: 3.2 to 3.3 g/cc
- Material Type: Silicon Nitride, Specialty Ceramic
- Performance Features: Hard
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Page 5. Semiconductor parts with 312 in root number
Ultra High Frequency Transistor Arrays .
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Page 3. Semiconductor parts with 127 in root number
Ultra High Frequency Transistor Arrays .
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hfa3 datasheet : Datasheets for Electronic Components and Semiconductors
Ultra high frequency transistor arrays .
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HFA30 datasheet : Datasheets for Electronic Components and Semiconductors
Ultra High Frequency Transistor Arrays .
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Page 2. Semiconductor parts with 096 in root number
Ultra High Frequency Transistor Arrays .
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Page 4. Semiconductor parts with 309 in root number
Ultra High Frequency Transistor Arrays .
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Page 5. Semiconductor parts with 304 in root number
Ultra High Frequency Transistor Arrays .
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Modeling requirements and techniques for plastic packages used in RFICs
This paper will describe the design consider- ations, modeling and verification processes used on an ultra high frequency transistor array housed in 16 lead SOIC plastic package.
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3046 datasheet : Datasheets for Electronic Components and Semiconductors
Ultra High Frequency Transistor Arrays .
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Page 8. Semiconductor parts with 883 in root number
Ultra High Frequency Transistor Array .