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Supplier: Renesas Electronics Corporation
Description: The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8.5GHz, while the PNP transistors have an fT of 7GHz. Both types
- Noise Figure: 4.6 dB
- Polarity: NPN
- Features: Other
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Supplier: ROHM Semiconductor USA, LLC
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: ROHM Semiconductor USA, LLC
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Accuris
Description: MICROCIRCUIT, LINEAR, ULTRA HIGH FREQUENCY, ALL NPN TRANSISTOR ARRAY, MONOLITHIC SILICON
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Supplier: Accuris
Description: MICROCIRCUIT, LINEAR, RADIATION HARDENED, ULTRA HIGH FREQUENCY, NPN-PNP COMBINATION TRANSISTOR ARRAY, MONOLITHIC SILICON
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Supplier: Utmel Electronic Limited
Description: RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Polarity: N-Channel
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: ROHM Semiconductor USA, LLC
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Transistor Type: HFET
- Polarity: NPN
- Features: Other
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Supplier: Comdel, Inc.
Description: compliant Control circuitry ensures consistency during high VSWR conditions Output transistors are beta-matched to assure reliability Broadband, low “Q” circuits inhibit “squeeging” and self-resonant oscillations
- AC Input Voltage: 208 volts
- Input Frequency: 50 to 60 Hz
- Output Frequency: 2 to 80 MHz
- Number of Outputs: 1 #
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Supplier: ODG (Origin Data Global)
Description: ULTRA HIGH FREQUENCY TRANSISTOR
- IC(max): 65 milliamps
- VCEO: 8 volts
- Noise Figure: 3.5 dB
- Operating Frequency: 8,000 to 5,500 MHz
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Description: ULTRA HIGH FREQUENCY TRANSISTOR
- VCEO: 8 volts
- Output Power: 0.15 watts
- Features: Bulk Pack, Other
- Transistor Type: General Purpose BJT
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Supplier: Acme Chip Technology Co., Limited
Description: ULTRA-HIGH FREQUENCY TRANSISTOR
- Features: Bulk Pack, Other
- Transistor Type: General Purpose BJT
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Supplier: Radwell International
Description: DISCONTINUED BY MANUFACTURER, RF SMALL SIGNAL BIPOLAR TRANSISTOR, 0.008A I(C), 1-ELEMENT, ULTRA HIGH FREQUENCY BAND, SILICON, NPN, SOT-23. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Littelfuse, Inc.
Description: conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT
- VCES: 600 volts
- VCE(on): 2.1 volts
- IC(max): 60 amps
- Transistor Type: IGBT
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Supplier: Littelfuse, Inc.
Description: conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT
- VCES: 600 volts
- VCE(on): 3 volts
- IC(max): 60 amps
- Transistor Type: IGBT
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Supplier: Littelfuse, Inc.
Description: conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT
- VCES: 300 volts
- VCE(on): 2.1 volts
- IC(max): 75 amps
- Transistor Type: IGBT
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Supplier: Littelfuse, Inc.
Description: conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT
- VCES: 600 volts
- VCE(on): 2.5 volts
- IC(max): 75 amps
- Transistor Type: IGBT
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Supplier: Rochester Electronics
Description: RF Small Signal Bipolar Transistor, Ultra High Frequency Band, NPN, TO-92
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
- Polarity: NPN
- Features: Other
- Package Type: TO-92
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MACRO-X-4 Product overview: MRF559 from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general
- Transistor Type: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, CP, 3 PIN Product overview: 2SC3772 from Sanyo is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general
- Transistor Type: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MPAK-3 Product overview: 2SC2735 from Hitachi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general
- Transistor Type: Bipolar RF Transistors
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Supplier: Richardson RFPD
Description: Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in LGA with 2.3 mm x 3.3 mm package size Features AEC-Q101 Qualified Ultra-High Switching Frequency and Ultra-Low Rds(on) Fast and
- Features: Other
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Supplier: Nexperia B.V.
Description: Dual ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits Low conduction
- Features: Other
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Supplier: Linear Systems
Description: The SD210DE/214 and SST210/214 are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video and high-frequency applications. The SD214DE and SST214 are normally used for ±10-V analog switching. These MOSFETs utilize lateral construction to achieve
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Supplier: ODG (Origin Data Global)
Description: RF ULTRA HIGH FREQUENCY BAND, N-
- Power Gain: 19 dB
- Operating Frequency: 1,000 MHz
- Transistor Type: MOSFET, MOSFET RF Transistors
- Features: Other
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Supplier: Infineon Technologies AG
Description: The GS-065-030-6-LL is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency. Housed in the bottom-side cooled TOLL package, it offers very low junction-to-case thermal
- Features: Other
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Supplier: Infineon Technologies AG
Description: The GS-065-030-6-LR is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency. Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal
- Features: Other
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Supplier: Richardson RFPD
Description: 650V 150A Half-Bridge Intelligent Power Module with Integrated Gate Drive This 650V 150A GaN E-mode IPM provides ultra-low ESW (switching losses), integrated gate drive, ultra-small system form factor, and low RDS(on). The module is designed for high-efficiency high
- Category: Development Board
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Supplier: Mini-Circuits
Description: Mini-Circuits’ SAV-331+ is a MMIC D-PHEMT transistor with an operating frequency range from 10 to 4000 MHz. This model combines high gain with extremely low noise figure, resulting in lower overall system noise. Low NF and IP3 performance make it an ideal choice for sensitive
- Minimum Gain: 11.5 dB
- Maximum Gain: 24.6 dB
- Noise Figure: 0.4 to 0.9 dB
- Operating Temperature: -40 to 85 C
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Description: Silicon nitride substrates offer exceptional heat resistance, ultra-high hardness, and fracture toughness, thus exhibiting outstanding mechanical properties under high-frequency vibration or high temperature circumstances. As a result, they are frequently used in
- Density: 3.1999979803934133 to 3.2999979172807077 g/cc
- Applications: Corrosion Protection, Electrical / HV Parts, Electronics / RF-Microwave
- Performance Features: Hard
- Shape / Form: Plate / Board (e.g., Fiberboard)
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Supplier: Nexperia B.V.
Description: N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology Ultra low QG and QGD for high system efficiency,
- V(BR)DSS: 30 volts
- IDSS: 10,300 milliamps
- VGS(off): 20 volts
- PD: 1.7 milliwatts
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Supplier: Broadcom Inc.
Description: Ultra low noise PHEMT packaged in a 1.4mm x 1.2mm x 0.7mm thin miniature leadless package. Its small size, high linearity and low noise figure is optimized for the design of hybrid module or first or second stage of basestation LNA. The device is also suitable for applications in
- Features: Other
- Transistor Type: PHEMT
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Page 5. Semiconductor parts with 312 in root number
Ultra High Frequency Transistor Arrays .
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Page 3. Semiconductor parts with 127 in root number
Ultra High Frequency Transistor Arrays .
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hfa3 datasheet : Datasheets for Electronic Components and Semiconductors
Ultra high frequency transistor arrays .
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HFA30 datasheet : Datasheets for Electronic Components and Semiconductors
Ultra High Frequency Transistor Arrays .
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Page 2. Semiconductor parts with 096 in root number
Ultra High Frequency Transistor Arrays .
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Page 4. Semiconductor parts with 309 in root number
Ultra High Frequency Transistor Arrays .
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Page 5. Semiconductor parts with 304 in root number
Ultra High Frequency Transistor Arrays .
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Modeling requirements and techniques for plastic packages used in RFICs
This paper will describe the design consider- ations, modeling and verification processes used on an ultra high frequency transistor array housed in 16 lead SOIC plastic package.
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3046 datasheet : Datasheets for Electronic Components and Semiconductors
Ultra High Frequency Transistor Arrays .
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Page 8. Semiconductor parts with 883 in root number
Ultra High Frequency Transistor Array .