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Supplier: Renesas Electronics Corporation
Description: The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8.5GHz, while the PNP transistors have an fT of 7GHz. Both types
- Noise Figure: 4.6 dB
- Polarity: NPN
- Features: Other
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Supplier: ROHM Semiconductor USA, LLC
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: ROHM Semiconductor USA, LLC
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Accuris
Description: MICROCIRCUIT, LINEAR, ULTRA HIGH FREQUENCY, ALL NPN TRANSISTOR ARRAY, MONOLITHIC SILICON
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Supplier: Accuris
Description: MICROCIRCUIT, LINEAR, RADIATION HARDENED, ULTRA HIGH FREQUENCY, NPN-PNP COMBINATION TRANSISTOR ARRAY, MONOLITHIC SILICON
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Supplier: Utmel Electronic Limited
Description: RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Polarity: N-Channel
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: ROHM Semiconductor USA, LLC
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Transistor Type: HFET
- Polarity: NPN
- Features: Other
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Supplier: Comdel, Inc.
Description: compliant Control circuitry ensures consistency during high VSWR conditions Output transistors are beta-matched to assure reliability Broadband, low “Q” circuits inhibit “squeeging” and self-resonant oscillations
- AC Input Voltage: 208 volts
- Input Frequency: 50 to 60 Hz
- Output Frequency: 2 to 80 MHz
- Number of Outputs: 1 #
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Supplier: ODG (Origin Data Global)
Description: ULTRA HIGH FREQUENCY TRANSISTOR
- IC(max): 65 milliamps
- VCEO: 8 volts
- Noise Figure: 3.5 dB
- Operating Frequency: 8,000 to 5,500 MHz
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Description: ULTRA HIGH FREQUENCY TRANSISTOR
- VCEO: 8 volts
- Output Power: 0.15 watts
- Features: Bulk Pack, Other
- Transistor Type: General Purpose BJT
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Supplier: Acme Chip Technology Co., Limited
Description: ULTRA-HIGH FREQUENCY TRANSISTOR
- Features: Bulk Pack, Other
- Transistor Type: General Purpose BJT
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Supplier: Littelfuse, Inc.
Description: conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT
- VCES: 600 volts
- VCE(on): 2.1 volts
- IC(max): 60 amps
- Transistor Type: IGBT
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Supplier: Radwell International
Description: DISCONTINUED BY MANUFACTURER, RF SMALL SIGNAL BIPOLAR TRANSISTOR, 0.008A I(C), 1-ELEMENT, ULTRA HIGH FREQUENCY BAND, SILICON, NPN, SOT-23. FREE 2 YEAR RADWELL WARRANTY
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Supplier: ROHM Semiconductor USA, LLC
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
- VCEO: 12 volts
- IC(max): 500 milliamps
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
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Supplier: Littelfuse, Inc.
Description: conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT
- VCES: 600 volts
- VCE(on): 3 volts
- IC(max): 60 amps
- Transistor Type: IGBT
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Supplier: Littelfuse, Inc.
Description: conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT
- VCES: 300 volts
- VCE(on): 2.1 volts
- IC(max): 75 amps
- Transistor Type: IGBT
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Supplier: Littelfuse, Inc.
Description: conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT
- VCES: 600 volts
- VCE(on): 2.5 volts
- IC(max): 75 amps
- Transistor Type: IGBT
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Supplier: Rochester Electronics
Description: Ultra-High Frequency Transistor Array
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MACRO-X-4 Product overview: MRF559 from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general
- Transistor Type: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MPAK-3 Product overview: 2SC2735 from Hitachi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general
- Transistor Type: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, CP, 3 PIN Product overview: 2SC3772 from Sanyo is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general
- Transistor Type: Bipolar RF Transistors
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Supplier: Richardson RFPD
Description: Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) with ultra-low on resistance. Features GaN-on-Silicon E-mode HEMT technology Dual Channels, Common Source Ultra High Switching Frequency
- Features: Other
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Supplier: Nexperia B.V.
Description: Dual ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits Low conduction
- Features: Other
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Supplier: Linear Systems
Description: The SD210DE/214 and SST210/214 are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video and high-frequency applications. The SD214DE and SST214 are normally used for ±10-V analog switching. These MOSFETs utilize lateral construction to achieve
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Supplier: ODG (Origin Data Global)
Description: RF ULTRA HIGH FREQUENCY BAND, N-
- Power Gain: 19 dB
- Operating Frequency: 1,000 MHz
- Transistor Type: MOSFET, MOSFET RF Transistors
- Features: Other
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Supplier: Infineon Technologies AG
Description: The GS-065-030-6-LR is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency. Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal
- Features: Other
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Supplier: Infineon Technologies AG
Description: The GS-065-030-6-LL is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency. Housed in the bottom-side cooled TOLL package, it offers very low junction-to-case thermal
- Features: Other
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Supplier: Richardson RFPD
Description: 650V 150A Half-Bridge Intelligent Power Module with Integrated Gate Drive This 650V 150A GaN E-mode IPM provides ultra-low ESW (switching losses), integrated gate drive, ultra-small system form factor, and low RDS(on). The module is designed for high-efficiency high
- Category: Development Board
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Description: Silicon nitride substrates offer exceptional heat resistance, ultra-high hardness, and fracture toughness, thus exhibiting outstanding mechanical properties under high-frequency vibration or high temperature circumstances. As a result, they are frequently used in
- Density: 3.1999979803934133 to 3.2999979172807077 g/cc
- Applications: Corrosion Protection, Electrical / HV Parts, Electronics / RF-Microwave
- Performance Features: Hard
- Shape / Form: Plate / Board (e.g., Fiberboard)
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Supplier: Nexperia B.V.
Description: N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology Ultra low QG and QGD for high system efficiency,
- Features: Enhancement, Other
- Transistor Type: MOSFET
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Supplier: Nexperia B.V.
Description: N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology Ultra low QG and QGD for high system efficiency,
- Features: Enhancement, Other
- Transistor Type: MOSFET
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Page 5. Semiconductor parts with 312 in root number
Ultra High Frequency Transistor Arrays .
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Page 3. Semiconductor parts with 127 in root number
Ultra High Frequency Transistor Arrays .
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hfa3 datasheet : Datasheets for Electronic Components and Semiconductors
Ultra high frequency transistor arrays .
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HFA30 datasheet : Datasheets for Electronic Components and Semiconductors
Ultra High Frequency Transistor Arrays .
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Page 2. Semiconductor parts with 096 in root number
Ultra High Frequency Transistor Arrays .
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Page 4. Semiconductor parts with 309 in root number
Ultra High Frequency Transistor Arrays .
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Page 5. Semiconductor parts with 304 in root number
Ultra High Frequency Transistor Arrays .
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Modeling requirements and techniques for plastic packages used in RFICs
This paper will describe the design consider- ations, modeling and verification processes used on an ultra high frequency transistor array housed in 16 lead SOIC plastic package.
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3046 datasheet : Datasheets for Electronic Components and Semiconductors
Ultra High Frequency Transistor Arrays .
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Page 8. Semiconductor parts with 883 in root number
Ultra High Frequency Transistor Array .