-
Supplier: ROHM Semiconductor GmbH
Description: RB461FM is a high reliability schottky barrier diode, suitable for general rectification.
- VF: 0.49 volts
- IF: 700 mA
- VR: 20 volts
- VRRM: 25 volts
-
Supplier: ROHM Semiconductor GmbH
Description: RB715FM-40 is a ultra low VF schottky barrier diode, suitable for high speed switching. This is a highly reliable product.
- VF: 0.37 volts
- IF: 1 mA
- VR: 40 volts
- VRRM: 40 volts
-
Supplier: ROHM Semiconductor GmbH
Description: RB461FMFH is a high reliability automotive schottky barrier diode, suitable for general rectification.
- VF: 0.49 volts
- IF: 700 mA
- VR: 20 volts
- VRRM: 25 volts
-
-
Supplier: ROHM Semiconductor GmbH
Description: RB715FM-40FH is a ultra low VF schottky barrier diode, suitable for high speed switching. This is a highly reliable product for automotive.
- VF: 0.37 volts
- IF: 1 mA
- VR: 40 volts
- VRRM: 40 volts
-
Supplier: Nexperia B.V.
Description: Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in an SOD323F (SC-76) very small Surface-Mounted Device (SMD) plastic package. Features and benefits Average forward current: IF ≤ 2 A Reverse voltage: VR ≤ 10 V Ultra low forward
- VF: 460 to 0.46 volts
- IF: 2,000 mA
- VR: 10 volts
- IR: 3 mA
-
Supplier: Nexperia B.V.
Description: Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD323 (SC-76) very small SMD plastic package. Features and benefits Forward current: 1 A Reverse voltage: 20 V Ultra high-speed switching Very low forward voltage Very
- VF: 550 to 0.55 volts
- IF: 1,000 mA
- VR: 20 volts
- IR: 0.05 mA
-
Supplier: Nexperia B.V.
Description: Planar Schottky barrier diode with an integrated guard ring for stress protection encapsulated in a SOD882 leadless ultra small plastic package. Features and benefits Forward current: 0.5 A Reverse voltage: 20 V Ultra low forward voltage Leadless ultra small
- Features: Other, Power Diode, Protector, Schottky, Schottky Barrier Diodes
- Applications: Rectifier Diode, Switching
-
Supplier: Nexperia B.V.
Description: Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small Surface-Mounted Device (SMD) plastic package. Features and benefits Forward current: 200 mA Reverse voltage: 30 V Very low forward voltage
- VF: 480 to 0.48 volts
- IF: 200 mA
- VR: 30 volts
- IR: 0.01 mA
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Low-Power, Dual, Schottky, 0.54 V, 5 A. Search-friendly keywords include diode, rectifier, Schottky, switching
- Applications: Rectifier Diode
- Features: Schottky Barrier Diodes
-
Supplier: RS Components, Ltd.
Description: Ultra Low VF Schottky Barrier Diode
- Features: Other, Schottky Barrier Diodes
- Applications: Rectifier Diode
- RoHS Compliant: RoHS Compliant
- Package: SOT323
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Low-Power, Schottky. Search-friendly keywords include diode, rectifier, Schottky, switching diode, Low-Power, Diode and Rectifier, Single
- Applications: Rectifier Diode
- Features: Schottky Barrier Diodes
-
Supplier: VAST STOCK CO., LIMITED
Description: Schottky Diodes & Rectifiers 10A 45V ULTRA-LOW VF SKTY
- Features: Other, Schottky Barrier Diodes
-
Supplier: Littelfuse, Inc.
Description: Littelfuse DST series Ultra Low VF Schottky Barrier Rectifier is designed to meet the general requirements of commercial and industry applications by providing high temperature, low leakage and lower VF products.It is suitable for high frequency switching
- VF: 1.6 volts
- IF: 5,000 mA
- IFSM: 120 amps
- Package: DPAK
-
Supplier: Utmel Electronic Limited
Description: PMEG3020EH; PMEG3020EJ - 30 V, 2 A ultra low VF MEGA Schottky barrier rectifiers SOD 2-Pin
- Features: Schottky Barrier Diodes
-
Supplier: ROHM Semiconductor USA, LLC
Description: RB088NS200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically used in
- VF: 0.88 volts
- IF: 5,000 mA
- VR: 200 volts
- IR: 0.007 mA
-
Supplier: Solid State Devices, Inc.
Description: FEATURES: Optimized for 2.1V and 3.3V output power supplies. The SUPER SCHOTTKY series has been designed to provide ultra low forward voltage drops at low operating temperatures of 75°C. Low VF, typically 380mV (per leg) at 75°C Low reverse leakage
- VF: 0.57 volts
- VR: 25 volts
- IFSM: 350 amps
- Features: Other, Schottky Barrier Diodes
-
Supplier: Allied Electronics, Inc.
Description: Features: Low VF Super High Speed Switching High Reliability By Planer Design Ultra Small Package, Possible for 5 mm Pitch Automatic Insertion Application: High Speed Switching
-
Supplier: DigiKey
Description: ULTRA LOW VF SCHOTTKY RECTIFIERS
- Tj: -55 to 150 C
-
Supplier: Rochester Electronics
Description: 20 A, 150 V Ultra-Low VF Schottky Rectifier
- Features: Other, Schottky Barrier Diodes
- Applications: Rectifier Diode
-
Supplier: Fuji Electric Corp. of America
Description: The Ultra Low-IR Schottky-Barrier Diode (SBD) guarantees junction temperature of 175°C. Compared with the conventional low IR series, it offers equivalent VF while IR is reduced to 1/10, or less – enabling a reduced risk of thermal runaway and enhanced
- VF: 0.63 volts
- IR: 20 mA
- IO: 15 amps
- IFSM: 120 amps
-
Supplier: Allied Electronics, Inc.
Description: Features: Low VF Super High Speed Switching High Reliability By Planer Design Ultra Small Package, Possible for 5 mm Pitch Automatic Insertion Application: High Speed Switching
-
Supplier: Allied Electronics, Inc.
Description: Features: Low VF Super High Speed Switching High Reliability By Planer Design Ultra Small Package, Possible for 5 mm Pitch Automatic Insertion Application: High Speed Switching
-
Supplier: Richardson RFPD
Description: Features CoolMOS: Ultra Low RDS(on), Low Miller capacitance, Ultra Low gate charge, Avalanche energy rated SiC Parallel Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature
- Features: Other
-
Supplier: Richardson RFPD
Description: Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Low stray inductance
- Features: MOSFET, Other
-
Supplier: Infineon Technologies AG
Description: high-side, low-side half-bridge gate driver (2EDF7275F) 32-bit microcontroller with ARM® Cortex-M4 (XMC4700-F144F2048 AA) 600 V CoolMOS™ S7 Superjunction MOSFET (IPT60R022S7) 1.8 A DC/DC step-down voltage regulator (IFX91041EJV33) Low VF Schottky Diode
- Bus Width: 32-Bit
- Category: Development Board
- Features: Other
Find Suppliers by Category Top
Featured Products Top
-
Vishay's 16 Gen 3 1,200 V silicon-carbide (SiC) Schottky diodes feature a merged PIN Schottky (MPS) design. They also combine high surge current robustness with low forward-voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power (read more)
Browse General Purpose Diodes Datasheets for DigiKey -
Discover the features and specifications of the MBRS340T3G Schottky Barrier Rectifier from ON Semiconductor, designed for efficiency and reliability in a wide range of electronic applications. This rectifier is highly favored in scenarios requiring low forward voltage drop and fast switching (read more)
Browse Diodes Datasheets for Win Source Electronics
More Information Top
Indicates content that may require registration and/or purchase.
-
http://www.nxp.com/documents/data_sheet/PMFPB8032XP.pdf
Integrated ultra low VF MEGA Schottky diode .
-
http://www.nxp.com/documents/data_sheet/PMFPB6532UP.pdf
Trench MOSFET technology Integrated ultra low VF MEGA Schottky diode 1 kV ElectroStatic Discharge (ESD) protection Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm Exposed drain pad for excellent thermal …
-
Page 1. Semiconductor parts with 521 in root number
SURFACE MOUNT ULTRA LOW VF SILICON SCHOTTKY DIODE TINY LEADLESS MODULE .
-
20V, 3.2A N-Channel and 20V, 2.3A P-Channel complementary MOSFETs in miniature SOT-23F package
• 30V, 100mA Low VF Schottky diodes in ultra miniature TLM2D3D6 package 6th October 2011 .
-
Low Power Microcontrollers for Temperature, Humidity & Carbon Monoxide Instrumentation
Ultra - Low VF Schottky Barrier Diodes RBE Series .
-
http://www.nxp.com/documents/selection_guide/NXP_computing_application_guide.pdf
DC/DC conversion: ultra - low - VF PMEG Schottky diodes .
-
http://www.nxp.com/documents/brochure/939775017444.pdf
Very efficient low VF and IR Schottky diodes in ultra small packages with tin-plated solderable side pads .
-
SB1245 Fairchild Semiconductor | Mouser
Schottky Diodes & Rectifiers 12A 45V Ultra Low VF Sch.
-
SBR8U60P5-13 Diodes Incorporated | Mouser
Schottky Diodes & Rectifiers 8A 60V ULTRA - LOW VF .
-
An energy harvesting system for passively generating power from human activities
In the experiment, several Schottky diodes are tested and an ultra - low voltage drop ( VF = 0.24 V at 10 mA dc) Schottky diode NSR0320 [20] is selected considering all the factors.