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Supplier: Richardson RFPD
Description: The MRF101AN-VHF evaluation board features NXP part MRF101AN and provides 104 Watts and 21.2 dB gain over 136-174 MHz. The board includes mounted transistor and all associated components. Full circuit documentation is available via download from NXP (registration required). For further
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Polarity: NPN
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Supplier: Utmel Electronic Limited
Description: TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal
- Polarity: N-Channel
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Supplier: ODG (Origin Data Global)
Description: RF TRANS NPNUHF/VHF
- Operating Frequency: 650 MHz
- Output Power: 0.3500 watts
- Package Type: Other
- Polarity: NPN, Other
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Polarity: NPN
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Supplier: ODG (Origin Data Global)
Description: VHF/UHF NPN SILICON TRANSISTOR
- Operating Frequency: 600 MHz
- Output Power: 0.2250 watts
- Package Type: SOT23, Other
- Polarity: NPN, Other
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Supplier: Richardson RFPD
Description: The MRFE6VP61K25-VHF evaluation board features NXP part MRFE6VP61K25H and provides 1250 Watts and 23 dB gain over 174-230 MHz. The board includes mounted transistor and all associated components. Full circuit documentation is available via download from NXP (registration required). For
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Supplier: ODG (Origin Data Global)
Description: TRANS NPN VHF/UHF SS 25V TO92
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: TRANS SS VHF NPN 25V SOT23
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN VHF Amp
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN VHF/UHF AM
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN VHF Osc
- Transistor Type: Bipolar RF Transistors
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Supplier: Wolfspeed
Description: Wolfspeed’s CGH27030 is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH27030 ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications
- Operating Frequency: 3000 MHz
- Output Power: 30 watts
- Package Type: Other
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Supplier: Wolfspeed
Description: Wolfspeed’s CGH27060F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE, 2.3 – 2.9-GHz WiMAX and BWA amplifier
- Operating Frequency: 3000 MHz
- Output Power: 60 watts
- Package Type: Other
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Polarity: NPN
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Supplier: Wolfspeed
Description: Wolfspeed’s CGH27015 is a gallium-nitride (GaN) high-electron-mobili ty transistor designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE, 2.3 – 2.9-GHz WiMAX and BWA amplifier
- Operating Frequency: 3000 MHz
- Output Power: 15 watts
- Package Type: Other
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT VHF TO UHF WIDEBAND AMPLIFIER
- Transistor Type: Bipolar RF Transistors
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Supplier: Richardson RFPD
Description: The MS1076 is a 28 volt epitaxial NPN silicon planar transistor designed primarily for SSB and VHF communications. This device utilizes an emitter ballasted die geometry for maximum ruggedness and reliability.
- Package Type: Other
- Transistor Type: Power BJT Transistors
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Supplier: PUI - Projections Unlimited, Inc.
Description: NPN Transistors, Best Suited For Low Noise VHF And VHF Amplifier Mixer and Oscillator Applications.
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Supplier: Richardson RFPD
Description: The NPT2021 GaN HEMT is a wideband transistor optimized for DC - 2.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W in an industry standard plastic package with bolt down flange. The NPT2021 is ideally suited for defense
- Operating Frequency: 0.0 to 2500 MHz
- Output Power: 50 watts
- Package Type: Other
- Power Gain: 14.2 dB
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Supplier: Infineon Technologies AG
Description: NPN Silicon RF Transistor Summary of Features High linearity low noise RF transistor 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA For UHF / VHF applications Driver for multistage amplifiers For linear broadband and antenna
- Package Type: SOT23, Other
- Packing Method: Tape Reel, Other
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Description: UHF/VHF MIXER NPN TRANSISTOR
- Packing Method: Bulk Pack, Other
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Supplier: Acme Chip Technology Co., Limited
Description: RF TRANS NPNUHF/VHF
- Output Power: 0.3500 watts
- Packing Method: Other
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Supplier: PUI - Projections Unlimited, Inc.
Description: Switching and Linear Application DC And VHF Amplifier Applications
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Supplier: Integra Technologies, Inc.
Description: The high power transistor part number IDM500CW300 is designed for VHF/UHF-Band systems operating at 1-500 . Operating at CW conditions, this dual MOSFET device supplies a minimum of 300 watts of power across the instantaneous operating bandwidth of 1-500 . All devices are 100% screened
- Operating Frequency: 1 to 500 MHz
- Output Power: 300 watts
- Package Type: Other
- Power Gain: 9.5 dB
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Supplier: Integra Technologies, Inc.
Description: The high power transistor part number IDM500CW200 is designed for VHF/UHF-Band systems operating at 1-500 . Operating at CW conditions, this dual MOSFET device supplies a minimum of 200 watts of power across the instantaneous operating bandwidth of 1-500 . All devices are 100% screened
- Operating Frequency: 1 to 500 MHz
- Output Power: 200 watts
- Package Type: Other
- Power Gain: 11 dB
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Supplier: Integra Technologies, Inc.
Description: The high power silicon transistor part number IDM175CW300 is designed for VHF-Band systems operating at 1-200 . Operating at CW conditions, this dual MOSFET device supplies a minimum of 300 watts of power across the instantaneous operating bandwidth of 1-200 . All devices are 100%
- Operating Frequency: 1 to 200 MHz
- Output Power: 300 watts
- Package Type: Other
- Power Gain: 14.5 dB
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Supplier: Integra Technologies, Inc.
Description: The high power transistor part number IDM30512CW100 is designed for VHF/UHF-Band systems operating over the frequency band 30-512 under CW conditions. Over the instantaneous operating band of 30-512 this dual MOSFET device is capable of supplying a minimum of 100 watts of output power.
- Operating Frequency: 30 to 512 MHz
- Output Power: 100 watts
- Package Type: Other
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Description: TRANS SS VHF NPN 25V SOT23
- Packing Method: Other
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Description: MOSFET SS N-CHAN VHF 30V SOT23
- Packing Method: Other
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Description: TRANS SS VHF NPN 15V SOT23
- Packing Method: Other
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Supplier: Acme Chip Technology Co., Limited
Description: TRANS NPN VHF/UHF SS 25V TO92
- Packing Method: Other
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: RF POWER TRANSISTORS FOR HF AND VHF
- Transistor Type: Darlington
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Supplier: Rochester Electronics
Description: UHF Oscillator and VHF Mixer NPN Transistor
- Package Type: TO-220, Other
- Packing Method: Tape Reel, Other
- Polarity: NPN
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Supplier: ValueTronics International, Inc.
Description: VHF Transmitters Plasma Equipment General Laboratory Nuclear Accelerators The ENI 3200L RF Amplifier covers the frequency range of 250 kHz to 150 MHz, with Class A linear power output ranging from 25 to 200 Watts. This reliable solid state unit is
- Frequency Range: 150 MHz
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Methods and applications for intensity stabilization of pulsed and cw lasers from 257 nm to 10.6 microns
Second, the electronics used for each feedback path can be optimized without tradeoff: the DC loop may use FET op-amps for high accuracy, while the RF loop uses VHF transistor circuitry.
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Page 15. Semiconductor parts with 270 in root number
PNP Silicon RF Transistor (For VHF oscillator applications) .
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Page 6. Semiconductor parts with 627 in root number
PNP Silicon RF Transistor (For VHF oscillator applications) .
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Page 12. Semiconductor parts with 702 in root number
PNP Silicon RF Transistor (For VHF oscillator applications) .
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Page 13. Semiconductor parts with 702 in root number
PNP Silicon RF Transistor (For VHF oscillator applications) .
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Page 5. Semiconductor parts with 477 in root number
RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS .
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Page 6. Semiconductor parts with 568 in root number
PNP Silicon RF Transistor (For VHF oscillator applications) .
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Semiconductors Catalogue -->Transistors-->Amplifier applications-->RF amplifiers
Silicon NPN transistor for TV VHF RF amplifier applications .
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Page 13. Semiconductor parts with 312 in root number
Silicon NPN transistor for TV VHF RF amplifier applications .
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2SC3 datasheet : Datasheets for Electronic Components and Semiconductors
Silicon NPN transistor for TV VHF RF amplifier applications .