VHF RF Transistors

Description: The MRF101AN-VHF evaluation board features NXP part MRF101AN and provides 104 Watts and 21.2 dB gain over 136-174 MHz. The board includes mounted transistor and all associated components. Full circuit documentation is available via download from NXP (registration required). For further

Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and

• Features: General Purpose BJT
• Polarity: NPN

Description: RF TRANS NPNUHF/VHF SOT23

• V_CEO: 25 volts
• Operating Frequency: 650 MHz
• Output Power: 0.35 watts
• T_J: -65 to 150 C

Description: TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal

• Features: JFET
• Polarity: N-Channel

Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and

• Features: General Purpose BJT
• Polarity: NPN

Description: RF MOSFET Transistors 300W - 50V Moisture Resistnt HF/VHF DMOS

• Features: MOSFET

Description: NPN Silicon RF Transistor Summary of Features High linearity low noise RF transistor 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA For UHF / VHF applications Driver for multistage amplifiers For linear broadband and antenna amplifiers Collector design supports

• Features: Other
• Package Type: SOT23
• Packing Method: Tape Reel

Description: RF JFET Transistors GaN HEMT VHF-3.0GHz, 30 Watt

• Transistor Type: JFET

Description: The NPT2021 GaN HEMT is a wideband transistor optimized for DC - 2.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W in an industry standard plastic package with bolt down flange. The NPT2021 is ideally suited for defense communications,

• Power Gain: 14.2 dB
• Output Power: 50 watts
• Operating Frequency: 0 to 2,500 MHz
• Features: Other

Description: JFET-N-CH UHF/VHF AMP

Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and

• Features: General Purpose BJT
• Polarity: NPN

Description: Silicon NPN Transistor, Audio Amplifier, Switch, Silicone Material Type

Description: N-Channel Silicon Junction Field Effect Transistor (JFET) High power gain is 10 dB (M") @ 400MHz High transconductance is 4000 μmho (M") @ 400MHz Drain and gate leads separated for high maximum stable gain For use in VHF amplifiers in fm, tv, and mobile communications equipment This is

Description: TRANS NPN BIPO VHF-UHF SSFP

• Polarity: NPN
• Features: Other

Description: Bipolar Transistors - BJT NPN VHF Osc

• Features: Bipolar RF Transistors

Description: TRANS NPN BIPO VHF-UHF MCP

• Polarity: NPN
• Features: Other

Description: TRANS NPN BIPO VHF-UHF MCP4

• Polarity: NPN

Description: IC TRANS RF HF/VHF/UHF

• Power Gain: 23.5 dB
• Operating Frequency: 30 MHz
• Features: MOSFET, Other
• Transistor Type: MOSFET RF Transistors

Description: VHF BAND, Si, NPN, RF POWER TRANSISTOR, 0.500 INCH, PLASTIC, M111, 6 PIN Product overview: SD1477 from STMicroelectronics is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is

• I_C(max): 20,000 milliamps
• V_CEO: 18 volts
• V_CBO: 36 volts
• P_D: 270,000 milliwatts

Description: Wolfspeed’s CGH27030 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH27030 ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications.

• Output Power: 30 watts
• Operating Frequency: 3,000 MHz
• Features: HEMT, Other

Description: Wolfspeed’s CGH27015 is a gallium-nitride (GaN) high-electron-mobility transistor designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE, 2.3 – 2.9-GHz WiMAX and BWA amplifier applications. The

• Output Power: 15 watts
• Operating Frequency: 3,000 MHz
• Features: HEMT, Other

Description: Wolfspeed’s CGH27060F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE, 2.3 – 2.9-GHz WiMAX and BWA amplifier

• Output Power: 60 watts
• Operating Frequency: 3,000 MHz
• Features: HEMT, Other

Description: NPN Transistors, Best Suited For Low Noise VHF And VHF Amplifier Mixer and Oscillator Applications.

Description: NPN VHF/UHF Transistor SOT-23

• Number of Transistors in the Chip: 1
• Features: General Purpose BJT, Other
• Polarity: NPN
• Package Type: SOT23

Description: UHF/VHF MIXER NPN TRANSISTOR

• Packing Method: Bulk Pack
• Features: General Purpose BJT, Other

Description: RF TRANS NPNUHF/VHF

• V_CEO: 25 volts
• Output Power: 0.35 watts
• Features: General Purpose BJT, Other

Description: RF POWER TRANSISTORS FOR HF AND VHF

• Features: Darlington

Description: The high power silicon transistor part number IDM175CW300 is designed for VHF-Band systems operating at 1-200 . Operating at CW conditions, this dual MOSFET device supplies a minimum of 300 watts of power across the instantaneous operating bandwidth of 1-200 . All devices are 100%

• Power Gain: 14.5 dB
• Output Power: 300 watts
• Operating Frequency: 1 to 200 MHz
• Features: Other, Power MOSFET

Description: NPN medium frequency transistor in a SOT23 plastic package. Features and benefits IC(max) =25 mA VCEO(max) =20 V Very low feedback capacitance (typ. 350 fF). AEC-Q101 qualified Applications IF and VHF thick and thin-film circuit applications.

• Polarity: NPN
• Features: Other
• Package Type: SOT23

Description: Silicon Complementary Transistor, PNP Transistor Type, 60 V Collector to Emitter Voltage -65 to +200 °C operating temperature range Designed for applications such as medium-speed switching and amplifiers from audio to VHF frequencies.

Description: UHF Oscillator and VHF Mixer NPN Transistor

• Polarity: NPN
• Features: Other
• Package Type: TO-220
• Packing Method: Tape Reel

Description: The 3200L is a 150 MHz, 200 Watt RF Amplifier from ENI. Amplify RF and Microwave signals to measure, test, and design circuits. Applications include radio communications, cellphones, EMI testing, and much more. Additional Features: Produces 200 Watts from 250 kHz and 120 MHz and 175

• Frequency Range: 150 MHz

Description: Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small-signal RF. Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier. See the attached MMG3014 datasheet for more specific information.

• Frequency Range: 40 to 4,000 MHz
• Maximum Gain: 19.5 dB
• Output Power( P_1dB): 25 dBm
• Noise Figure: 5.7 dB

Description: power RF LDMOS transistors and also features built in control and monitoring, with protection functions to insure high availability. Empower RF 1193 can be factory configured for 48VDC yielding up to 200W output. Consult Richardson RFPD for operation and limitations of this