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Supplier: Infineon Technologies AG
Description: This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-04R a suitable choice for mixer and detector functions in
- Diode Applications: Detector, Mixer
- Diode Type: Schottky Barrier Diodes, RF Diodes
- IF: 110 mA
- RoHS Compliant: Yes
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Supplier: Infineon Technologies AG
Description: are as high as 12 GHz. Summary of Features • Low inductance Ls = 2 nH (typical) • Low capacitance C = 0.29 pF (typical) • Industry standard SOT143 (2.9 mm x 2.4 mm x 1 mm) • Pb-free (RoHS compliant) and halogen free Potential Applications For mixers in: • Satellite systems • Low noise
- Diode Applications: Detector, Mixer
- Diode Type: Schottky Barrier Diodes, RF Diodes
- IF: 110 mA
- RoHS Compliant: Yes
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, SILICON, X-BAND VIDEO DETECTOR TYPE 1N31A
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Supplier: Richardson RFPD
Description: Single Diode Configuration: The MA4E2054L-1261 diode is a low barrier, n-type, silicon Schottky device. It is useful as a high performance mixer or detector diode at frequencies from VHF through X-band. These chips can be used in automatic assembly processes due to
- Diode Type: Schottky Barrier Diodes, RF Diodes
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Supplier: RS Components, Ltd.
Description: Schottky Diode, S to X-Band Detector CP3 - Discrete Semiconductors - Rectifier & Schottky Diodes
- Diode Applications: Rectifier Diode
- Diode Type: Schottky Barrier Diodes
- IF: 50 mA
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Supplier: Rochester Electronics
Description: RF Mixer and Detector Schottky Diode
- Diode Applications: Detector, Mixer
- Diode Type: Schottky Barrier Diodes, RF Diodes
- RoHS Compliant: Yes
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Supplier: Hamamatsu Photonics
Description: Low breakdown voltage type MPPC for scintillation detector The S14161 series achieve higher PDE (photon detection efficiency) and lower operation voltage than other MPPC to adapt for PET and radiation monitor application. They achieve small dead space in a photosensitive area with HWB
- Diode Applications: Detector
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Supplier: Hamamatsu Photonics
Description: One-dimensional 128 ch array, Pixel pitch: 57.5 × 62.5 µm The S13552 is a one-dimensional 128-element MPPC array. This is used by the SciFi (scintillating fiber) tracker in LHCb (Large Hadron Collider beauty experiment), one of detectors located at the LHC of CERN (European Organization for
- Diode Applications: Detector
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Supplier: Infineon Technologies AG
Description: This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-099 a suitable choice for mixer and detector functions in
- Diode Applications: Detector, Mixer
- Diode Type: Schottky Barrier Diodes, RF Diodes
- IF: 110 mA
- RoHS Compliant: Yes
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Supplier: Rochester Electronics
Description: RF Mixer and Detector Schottky Diode
- Diode Applications: Detector, Mixer
- Diode Type: Schottky Barrier Diodes, RF Diodes
- RoHS Compliant: Yes
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Supplier: Infineon Technologies AG
Description: Silicon Schottky Diodes Summary of Features For mixer applications in the VHF / UHF range For high-speed switching applications Pb-free (RoHS compliant) package Potential Applications Wireless Communications Satellite Receivers Base Stations High Speed Data Networks RFID
- Diode Applications: Detector, Mixer
- Diode Type: Schottky Barrier Diodes, RF Diodes
- IF: 130 mA
- RoHS Compliant: Yes
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Supplier: Rochester Electronics
Description: RF Mixer and Detector Schottky Diode
- Diode Applications: Detector, Mixer
- Diode Type: Schottky Barrier Diodes, RF Diodes
- RoHS Compliant: Yes
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Supplier: Rochester Electronics
Description: RF Mixer and Detector Schottky Diode
- Diode Applications: Detector, Mixer
- Diode Type: Schottky Barrier Diodes, RF Diodes
- RoHS Compliant: Yes
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Supplier: Hamamatsu Photonics
Description: Low breakdown voltage type MPPC for scintillation detector The S14160 series achieve higher PDE (photon detection efficiency) and lower operation voltage than other MPPC to adapt for PET and radiation monitor application. They achieve small dead space in a photosensitive area with HWB
- Diode Applications: Detector
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Supplier: Hamamatsu Photonics
Description: Low breakdown voltage type MPPC for scintillation detector The S14160 series achieve higher PDE (photon detection efficiency) and lower operation voltage than other MPPC to adapt for PET and radiation monitor application. They achieve small dead space in a photosensitive area with HWB
- Diode Applications: Detector
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Supplier: Broadcom Inc.
Description: The HSMS-282x family of schottky diodes are the best all-round choice for most applications. These products featuring low series resistance, low forward voltage at all current levels, and good RF characteristics. Applications include clamping, low frequency mixers, biased
- Diode Applications: Switching, Detector, Mixer, Other
- Diode Type: Schottky Barrier Diodes, RF Diodes
- IF: 10 mA
- IR: 1.00E-4 mA
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Supplier: Broadcom Inc.
Description: General purpose Schottky diode in a broad range of package configurations. Optimised for High voltage clamp or analog DC switch applications. For low breakdown applciations, like detectors or mixers, please refer to HSMS-282X. For low flicker (1/F) noise applications refer to
- Diode Applications: Switching, Detector, Mixer
- Diode Type: Schottky Barrier Diodes, RF Diodes
- IF: 1 mA
- IR: 2.00E-4 mA
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Supplier: Broadcom Inc.
Description: The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large signal detection, modulation, RF to DC conversion or voltage doubling. VBR=4 V, CT=0.3 pF, RD@5mA=14Ohms, Vf
- Diode Applications: Modulation, Detector
- Diode Type: Schottky Barrier Diodes, RF Diodes
- IF: 1 mA
- RoHS Compliant: Yes
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Supplier: Broadcom Inc.
Description: The HSMS-285x zero bias Schottky detector diodes have been designed and optimised for use in small signal (Pin<-20dBm) applications at frequencies below 1.5GHz. They are ideal for RF/ID and RF tag applications where DC bias power is not avialable. Tangential Sensitivity (TSS) =
- Diode Applications: Detector
- Diode Type: Schottky Barrier Diodes, RF Diodes
- IF: 1 mA
- IR: 0.1750 mA
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Supplier: SemiGen
Description: capacitance which allows for optimum performance. Low conversation loss and superior TSS make these diodes ideal for detector / mixer applications with frequency ranges from S band to Ka band as well as modulators, lower power limiters and high speed switches. Features:
- Diode Applications: Switching, Modulation, Detector, Mixer
- Diode Type: Schottky Barrier Diodes
- VF: 305 volts
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Supplier: Nexperia B.V.
Description: High performance voltage regulator diodes in a small SOT23 (TO-236AB), Surface-Mounted Device (SMD) plastic package. Features and benefits Very low dynamic impedance at low currents: approximately 5 % of conventional series Hard breakdown knee Low noise
- Diode Applications: Limiter, Detector, Power Diode
- Diode Type: Avalanche Diodes
- IF: 250 mA
- Tj: 150 C
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Diode Applications: Detector
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Supplier: MACOM
Description: At MACOM we produce a wide variety of Schottky diodes as your best choice for microwave circuit detector and mixer applications ranging from DC to 80 GHz. These devices are available in die form, SURMOUNTTM, flip chip, plastic and ceramic packaging.
- Diode Applications: Detector, Mixer
- Diode Type: Schottky Barrier Diodes
- VF: 0.0900 to 1200 volts
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diodes and two DC blocking caps designed for use as a passive receiver protector in wireless systems up to 6 GHz. Targeted for cellular infrastructure base station, repeater, and wireless backhaul OEMs, it can also be used in broad market wireless systems including VSAT, S-band radar, military (read more)
Browse PIN Diodes Datasheets for Skyworks Solutions, Inc. -
the junction during automated or manual handling. The flip chip configuration is suitable for pick-and-place insertion. The high cutoff frequencies of these diodes allow use through W-band frequencies. Typical applications include single and double balanced mixers in radio (read more)
Browse Schottky Diodes Datasheets for Richardson RFPD -
communications market. The three New Butler Matrix models use KRYTAR’s high-performance 90- and 180-degree Hybrid Couplers providing super phase accuracy, amplitude imbalance, stability and repeatability. Offering coverage of multiple microwave bands, from 1.0 to 40.0 GHz, a KRYTAR Butler (read more)
Browse RF Couplers Datasheets for KRYTAR, Inc. -
KBM90240725 4X4 Butler Matrix. Covering the frequency range from 2.4 to 7.25.0 GHz (S- and C-Bands) this Butler Matrix provides ±0.8 dB of Maximum Amplitude Imbalance and Maximum Phase Imbalance of ±8.9 degrees. This Butler Matrix exhibits Insertion Loss of <7.9 (read more)
Browse RF Phase Shifters Datasheets for KRYTAR, Inc. -
2x extended range and approximately 11 dB improved sensitivity versus a standalone SoC, covering both FCC and ETSI unlicensed bands 2 to 4.8 V supply voltage range, enabling direct operation from a battery (read more)
Browse RF Modules Datasheets for Skyworks Solutions, Inc. -
Traveling wave tube X-ray tube assembly Electrosurgical instruments Implantable packaging and feedthrough Gas detector Microscope (TEM, SEM) High-voltage feedthrough High-temperature feed component Radio frequency feedthrough Photoelectric and power tubes Laser tube Thyristor Diode (read more)
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Emitters including Electrosurgical Devices, Diathermy Devices, X-ray device, EAS and Metal Detectors, WPT (Wireless Power Transfer) devices, NFC (Near Field Communication) Emitters, and 5G cellular signals in both FR1 and FR2 bands. Our customer’s test reports have been submitted with (read more)
Browse Electrical and EMC Testing Services Datasheets for F2 Labs -
. The high-performance PLL has a -239 dBc/Hz for normalized in-band phase noise floor, ultra-low 1/f noise, and a high phase/frequency detector (PFD) frequency that can achieve ultra-low in-band noise and integrated jitter. The fundamental VCO and output divider of the ADF4378 generate frequencies (read more)
Browse RF and Microwave Connectors Datasheets for DigiKey -
enhances the selection of multi-purpose, stripline designs that exhibit excellent coupling over a broadband frequency range of 1.0 to 26.5 GHz (L- through K-Bands) in a single, compact and lightweight package (read more)
Browse RF Couplers Datasheets for KRYTAR, Inc. -
ULTRA4100400K, delivers exceptional versatility from 10.0 to 40.0 GHz (X- thru KA-Bands) with excellent phase and amplitude matching. Typical specifications include 3 dB Coupling; Amplitude Imbalance: ±0.9 dB; Phase Imbalance is ±8 degrees; Isolation is >15 dB; Maximum VSWR: 1.65; and Insertion (read more)
Browse RF Couplers Datasheets for KRYTAR, Inc.
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A free electron laser oscillator based on a cyclotron-undulator interaction
X band diode detector or a 2 cm band diode detector and transition section could be used.
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Spin polarized triplets oriented in liquid crystals
The EPR signal is driven from the preamplifier connected directly to the X - band microwave diode detector with care taken to avoid any interference from the 100 KHz filters providing a response time of ~200 ns.
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Characteristics of varactors biased into avalanche
A modified HIP X - band crystal detector with the diode mounted on a post was used as the varactor holder.
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Tunnel diode with asymmetric spacer layers for use as microwave detector
…use of tunnel structures as selfoscillating mixers or as detectors does however seem a more promising line of research in the shorter term, and indeed we have previously reported the use of multilayer GaAs/AlAs tunnel diodes as microwave detectors at X band .
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Novel photonic device using nonlinear corner-bend structure
…use of tunnel structures as selfoscillating mixers or as detectors does however seem a more promising line of research in the shorter term, and indeed we have previously reported the use of multilayer GaAs/AlAs tunnel diodes as microwave detectors at X band .
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Photoconductive Detectors with Fast Temporal Response for Laser Produced Plasma Experiments.
For the X-ray spectral band typical detectors are the X -ray diode (XRD) or microchannel plate detector (MCP).
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An X-band nanosecond gunn oscillator
The circuit con tained a Г4 83 generator, a directional coupler with a 30.6 dB transient attenuation coefficient, waveguide isolators and attenuators, and a diode mixer based on an X band waveguide detector from the У3 29 ampli fier kit.
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Time-resolved soft-x-ray studies of energy transport in layered and planar laser-driven targets
broad spectral bands with x -ray diode (XRD) detectors coupled to fast 2 oscilloscopes.
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Water detection in fuel tanks using the microwave reflection technique
It consists of a microwave source ( X - band Gunn oscillator), a detector diode (low-barrier silicon Schottky diode) and a plastic container filled with diesel fuel and water.
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The Development of Gallium Arsenide Schottky Barrier Diodes as Mixers and Detectors
FIG. I X - BAND LOW LEVEL DETECTOR PERFORMANCE GaAs SCHOTTKY DIODE (- dBm) .