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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, SILICON, X-BAND VIDEO DETECTOR TYPE 1N31A
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Supplier: Infineon Technologies AG
Description: frequencies are as high as 12 GHz. Summary of Features Low inductance Ls = 1.5 nH (typical) Low capacitance C = 0.27 pF (typical) at 1 MHz Industry standard SOT23 package (2.9 mm x 2.4 mm x 1 mm) Pb-free (RoHS compliant) Potential Applications For mixers and detectors in:
- VF: 0.25 volts
- IF: 110 mA
- VR: 4 volts
- Diode Applications: Detector, Mixer
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Supplier: Richardson RFPD
Description: Single Diode Configuration: The MA4E2054L-1261 diode is a low barrier, n-type, silicon Schottky device. It is useful as a high performance mixer or detector diode at frequencies from VHF through X-band. These chips can be used in automatic assembly processes
- Operating Frequency: 0 to 10,000 MHz
- CT: 0.16 pF
- Features: Other, Single
- Diode Type: RF Diodes, Schottky Barrier Diodes
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Supplier: Rochester Electronics
Description: RF Mixer and Detector Schottky Diode
- Diode Applications: Detector, Mixer
- Features: Other
- Diode Type: RF Diodes, Schottky Barrier Diodes
- RoHS Compliant: RoHS Compliant
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Supplier: RS Components, Ltd.
Description: Infineon BAT62E6327HTSA1 Diode
- Pin Count: 4
- Diode Applications: Detector, Rectifier Diode
- Features: Other, SOT143, Schottky
- Diode Type: PIN Diodes
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Supplier: RS Components, Ltd.
Description: BAT62 dual Schottky detector
- Pin Count: 4
- Diode Applications: Detector, Rectifier Diode
- Features: Other, SOT143
- RoHS Compliant: RoHS Compliant
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Supplier: Infineon Technologies AG
Description: Silicon Schottky Diodes Summary of Features Low barrier diode for detectors up to GHz frequencies Pb-free (RoHS compliant) package Potential Applications Wireless Communications Satellite Receivers Base Stations High Speed Data Networks RFID Applications Automotive telematics
- VF: 0.5 volts
- IF: 20 mA
- VR: 40 volts
- Diode Applications: Detector, Mixer
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Supplier: Nexperia B.V.
Description: High performance voltage regulator diodes in a small SOT23 (TO-236AB), Surface-Mounted Device (SMD) plastic package. Features and benefits Very low dynamic impedance at low currents: approximately 5 % of conventional series Hard breakdown knee Low noise: approximately 10 % of conventional
- Diode Type: Avalanche Diodes
- Diode Applications: Detector, Limiter, Power Diode
- Features: Other, SOT23
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Supplier: Nexperia B.V.
Description: The PLVA2600A series consists of two high performance voltage regulator diodes with common anodes, in small SOT23 plastic SMD packages. The series consists of PLVA2650A to PLVA2668A. Features and benefits Very low dynamic impedance at low currents: approximately 1/20 of conventional series
- IF: 250 mA
- Tj: 150 C
- PD: 250 milliwatts
- Diode Type: Avalanche Diodes
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Supplier: Hamamatsu Photonics Europe
Description: Low breakdown voltage type MPPC for scintillation detector The S14161 series achieve higher PDE (photon detection efficiency) and lower operation voltage than other MPPC to adapt for PET and radiation monitor application. They achieve small dead space in a photosensitive area with HWB (hole
- CT: 900 pF
- Diode Applications: Detector
- Features: Other
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Supplier: Broadcom Inc.
Description: General purpose Schottky diode in a broad range of package configurations. Optimised for High voltage clamp or analog DC switch applications. For low breakdown applciations, like detectors or mixers, please refer to HSMS-282X. For low flicker (1/F) noise applications refer to
- VF: 0.4 volts
- IF: 1 mA
- IR: 0.0002 mA
- Tj: 150 C
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Supplier: SemiGen
Description: The SemiGen SZB900 Series of Zero Bias Schottky Detector diodes are designed for use in video detectors and power monitors eliminating the need to provide external DC bias to the diode. The choice of barrier metal and processes provide a broad selection of video
- VF: 0.3 volts
- Diode Applications: Detector
- Features: Other
- Diode Type: Schottky Barrier Diodes
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Supplier: SemiGen
Description: which allows for optimum performance. Low conversation loss and superior TSS make these diodes ideal for detector / mixer applications with frequency ranges from S band to Ka band as well as modulators, lower power limiters and high speed switches. Features:
- VF: 0.55 volts
- Diode Applications: Detector, Mixer, Modulation, Switching
- Features: Other
- Diode Type: Schottky Barrier Diodes
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Supplier: Broadcom Inc.
Description: The HSMS-282x family of schottky diodes are the best all-round choice for most applications. These products featuring low series resistance, low forward voltage at all current levels, and good RF characteristics. Applications include clamping, low frequency mixers, biased detectors,
- VF: 0.34 volts
- IF: 10 mA
- VR: 1 volts
- IR: 0.0001 mA
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Supplier: Broadcom Inc.
Description: The HSMS-285x zero bias Schottky detector diodes have been designed and optimised for use in small signal (Pin<-20dBm) applications at frequencies below 1.5GHz. They are ideal for RF/ID and RF tag applications where DC bias power is not avialable. Tangential Sensitivity (TSS) = -57 dBm
- VF: 0.15 volts
- IF: 1 mA
- VR: 2 volts
- IR: 0.175 mA
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Supplier: SemiGen
Description: which allows for optimum performance. Low conversation loss and superior TSS make these diodes ideal for detector / mixer applications with frequency ranges from S band to Ka band as well as modulators, lower power limiters and high speed switches. Features: Stable
- VF: 395 volts
- Diode Applications: Detector, Mixer, Modulation, Switching
- Diode Type: Schottky Barrier Diodes
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Supplier: MACOM
Description: At MACOM we produce a wide variety of Schottky diodes as your best choice for microwave circuit detector and mixer applications ranging from DC to 80 GHz. These devices are available in die form, SURMOUNTTM, flip chip, plastic and ceramic packaging.
- VF: 0.09 to 1,200 volts
- Diode Applications: Detector, Mixer
- Features: Other
- Diode Type: Schottky Barrier Diodes
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Supplier: Newark, An Avnet Company
Description: PHOTODETECTOR; No. of Pins:3Pins; Diode Case Style:TO-5; Wavelength of Peak Sensitivity:900nm; Angle of Half Sensitivity ±:-; Dark Current:1000pA; Operating Temperature Min:-25°C; Operating Temperature Max:75°C; Product Range:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: PHOTODETECTOR, UV+BLUE , 43MW/CM2; No. of Pins:3Pins; Diode Case Style:TO-5; Wavelength of Peak Sensitivity:445nm; Spectral Sensitivity @ Peak:120000mV/µW/cm2; Operating Temperature Min:-25°C; Operating Temperature Max:85°C; Product RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: PHOTODETECTOR, UV+BLUE , 430MICOW/CM2; No. of Pins:3Pins; Diode Case Style:TO-5; Wavelength of Peak Sensitivity:445nm; Spectral Sensitivity @ Peak:12mV/µW/cm2; Operating Temperature Min:-25°C; Operating Temperature Max:85°C; Product RoHS Compliant: Yes
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Diode Applications: Detector
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diodes and two DC blocking caps designed for use as a passive receiver protector in wireless systems up to 6 GHz. Targeted for cellular infrastructure base station, repeater, and wireless backhaul OEMs, it can also be used in broad market wireless systems including VSAT, S-band radar, military (read more)
Browse PIN Diodes Datasheets for Skyworks Solutions, Inc. -
the junction during automated or manual handling. The flip chip configuration is suitable for pick-and-place insertion. The high cutoff frequencies of these diodes allow use through W-band frequencies. Typical applications include single and double balanced mixers in radio (read more)
Browse Schottky Diodes Datasheets for Richardson RFPD -
communications market. The three New Butler Matrix models use KRYTAR’s high-performance 90- and 180-degree Hybrid Couplers providing super phase accuracy, amplitude imbalance, stability and repeatability. Offering coverage of multiple microwave bands, from 1.0 to 40.0 GHz, a KRYTAR Butler (read more)
Browse RF Couplers Datasheets for KRYTAR, Inc. -
KBM90240725 4X4 Butler Matrix. Covering the frequency range from 2.4 to 7.25.0 GHz (S- and C-Bands) this Butler Matrix provides ±0.8 dB of Maximum Amplitude Imbalance and Maximum Phase Imbalance of ±8.9 degrees. This Butler Matrix exhibits Insertion Loss of <7.9 (read more)
Browse RF Phase Shifters Datasheets for KRYTAR, Inc. -
2x extended range and approximately 11 dB improved sensitivity versus a standalone SoC, covering both FCC and ETSI unlicensed bands 2 to 4.8 V supply voltage range, enabling direct operation from a battery (read more)
Browse RF Modules Datasheets for Skyworks Solutions, Inc. -
Traveling wave tube X-ray tube assembly Electrosurgical instruments Implantable packaging and feedthrough Gas detector Microscope (TEM, SEM) High-voltage feedthrough High-temperature feed component Radio frequency feedthrough Photoelectric and power tubes Laser tube Thyristor Diode (read more)
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Emitters including Electrosurgical Devices, Diathermy Devices, X-ray device, EAS and Metal Detectors, WPT (Wireless Power Transfer) devices, NFC (Near Field Communication) Emitters, and 5G cellular signals in both FR1 and FR2 bands. Our customer’s test reports have been submitted with (read more)
Browse Electrical and EMC Testing Services Datasheets for F2 Labs -
. The high-performance PLL has a -239 dBc/Hz for normalized in-band phase noise floor, ultra-low 1/f noise, and a high phase/frequency detector (PFD) frequency that can achieve ultra-low in-band noise and integrated jitter. The fundamental VCO and output divider of the ADF4378 generate frequencies (read more)
Browse RF and Microwave Connectors Datasheets for DigiKey -
enhances the selection of multi-purpose, stripline designs that exhibit excellent coupling over a broadband frequency range of 1.0 to 26.5 GHz (L- through K-Bands) in a single, compact and lightweight package (read more)
Browse RF Couplers Datasheets for KRYTAR, Inc. -
ULTRA4100400K, delivers exceptional versatility from 10.0 to 40.0 GHz (X- thru KA-Bands) with excellent phase and amplitude matching. Typical specifications include 3 dB Coupling; Amplitude Imbalance: ±0.9 dB; Phase Imbalance is ±8 degrees; Isolation is >15 dB; Maximum VSWR: 1.65; and Insertion (read more)
Browse RF Couplers Datasheets for KRYTAR, Inc.
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A free electron laser oscillator based on a cyclotron-undulator interaction
X band diode detector or a 2 cm band diode detector and transition section could be used.
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Spin polarized triplets oriented in liquid crystals
The EPR signal is driven from the preamplifier connected directly to the X - band microwave diode detector with care taken to avoid any interference from the 100 KHz filters providing a response time of ~200 ns.
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Characteristics of varactors biased into avalanche
A modified HIP X - band crystal detector with the diode mounted on a post was used as the varactor holder.
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Tunnel diode with asymmetric spacer layers for use as microwave detector
…use of tunnel structures as selfoscillating mixers or as detectors does however seem a more promising line of research in the shorter term, and indeed we have previously reported the use of multilayer GaAs/AlAs tunnel diodes as microwave detectors at X band .
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Novel photonic device using nonlinear corner-bend structure
…use of tunnel structures as selfoscillating mixers or as detectors does however seem a more promising line of research in the shorter term, and indeed we have previously reported the use of multilayer GaAs/AlAs tunnel diodes as microwave detectors at X band .
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Photoconductive Detectors with Fast Temporal Response for Laser Produced Plasma Experiments.
For the X-ray spectral band typical detectors are the X -ray diode (XRD) or microchannel plate detector (MCP).
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An X-band nanosecond gunn oscillator
The circuit con tained a Г4 83 generator, a directional coupler with a 30.6 dB transient attenuation coefficient, waveguide isolators and attenuators, and a diode mixer based on an X band waveguide detector from the У3 29 ampli fier kit.
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Time-resolved soft-x-ray studies of energy transport in layered and planar laser-driven targets
broad spectral bands with x -ray diode (XRD) detectors coupled to fast 2 oscilloscopes.
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Water detection in fuel tanks using the microwave reflection technique
It consists of a microwave source ( X - band Gunn oscillator), a detector diode (low-barrier silicon Schottky diode) and a plastic container filled with diesel fuel and water.
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The Development of Gallium Arsenide Schottky Barrier Diodes as Mixers and Detectors
FIG. I X - BAND LOW LEVEL DETECTOR PERFORMANCE GaAs SCHOTTKY DIODE (- dBm) .