A new power MOSFET concept has been introduced in this book. Unlike prior MOSFETs which operate by pinch-off of the inversion layer in the channel, the new concept is based upon retaining the channel in the linear mode of operation and relying upon current saturation by utilizing the velocity-field curve for silicon. Analytical formulations have been provided in Chapter 3 that enable an accurate description of the current-voltage characteristics obtained in devices with this new mode of operation. It has been shown that the new mode of operation allows current saturation while retaining a linear relationship between the output drain current and the input gate voltage. Such characteristics are ideal for amplification of RF and audio signals without distortion.

In subsequent chapters of this book, many novel device structures were described that allow physical realization of the proposed super-linear MOSFET behavior. With the aid of two-dimensional numerical simulations, it was demonstrated that it is indeed possible to observe the super-linear output and transfer characteristics. In this chapter, the performance of these devices is compared and contrasted with that for the LD-MOSFET structure. Before doing so, the physics underlying super-linear operation is confirmed in the first section by examination of the potential distribution for one structure as an example.