This appendix provides access to datasheets of RF power MOSFET products. The widely accepted technology for RF Power Amplifiers used in cellular base stations is the silicon LD-MOSFET structure. This device is manufactured by several companies. Datasheets for their products can be obtained by using the links provided on the next page.

The SL-MOSFET technology was commercialized by Silicon Wireless Corporation (whose name has since been changed to Silicon Semiconductor Corporation). The company announced a line-up of products for 900 MHz applications. This consisted of a pre-driver (9SL2), a driver (9SL7), and an output transistor (9SL25). The last number on the name of the product indicates the super-linear power. This was defined as the RF power up to which a third-order distortion (IMD3) level of less than 45 dBc was guaranteed. In the case of the LD-MOSFET products, it has been traditional to use the P1dB (power level at which the power gain drops by 1 dB) power in the product nomenclature. For the SL-MOSFET products, the P1dB power level is about 4 times the super-linear power.

Due to changes in product focus at Silicon Semiconductor Corporation, the datasheets for the RF products are no longer available on the website. Consequently, selected data from the datasheets has been reproduced in this Appendix.