TABLE OF CONTENTS In Chapter 3, we presented two strong inversion MOS transistor models that describe the behavior of the transistor over a range of terminal conditions ( S, G, D, B). These models can be useful for hand calculations and computer simulations using either the simple model or more complex models. However, before the models can be used, proper model parameters that describe the particular characteristics of a given device must be supplied. If device model parameters are not available from the wafer manufacturer, then before a design can begin, devices must be characterized to obtain suitable model parameters. It is prudent practice for the designer to obtain a sampling of the components from the wafer vendor and characterize them in order to obtain the desired model parameters. The characterization process is the subject of this appendix.
Using the simple model, graphical and numerical techniques will be developed to extract the model parameters. Attention will be given to the geometrical aspects of a good test structure. Some of the techniques and results will be extended to the complex model, where further work will be done to capture some of the second-order parameters associated with this model. Other areas that must be characterized are transistor noise and passive-component parameters.
The equations that model a MOS transistor in strong inversion saturated and nonsaturated regions were given in Section 3.1 and are repeated here for convenience.
where
The primary parameters of interest are V
