Complete Wireless Design

Glossary

A-B

Active device
Any component that can amplify a DC and/or AC signal, such as a JFET, BJT, MOSFET, etc.
Active region
The 0.2-V range of V BE in which a BJT is capable of amplifying an incoming signal. It is the region between saturation ( V BE = 0.8 V) and cutoff ( V BE = 0.6 V); within these two V BE values the I B , and thus the I C , is controlled.
AGC saturation point
An area in which any further increase in AGC voltage becomes nonlinear, or saturates, at the AGC knee.
Application specific integrated circuit (ASIC)
A custom-designed and -built integrated circuit.
Automatic noise limiter (ANL)
A diode circuit that is located after the baseband detector to cut off any noise spikes that would reach the audio section of an AM or SSB receiver.
Average power
Since peak power is the power at the highest amplitude of a digital pulse, most measuring devices would have difficulty measuring a rapid and changing peak amplitude. They instead will normally measure only the average power of a signal over time (about 1 second). The signal itself may have peaks that are 10 times or more higher in amplitude than this average power over time, but these are not uniform, nor are they predictable.
Backplane
A common connection point for multiple components, circuits, or systems.
Balanced amplifier
A push-pull power amplifier.
Ballast resistor

UNLIMITED FREE
ACCESS
TO THE WORLD'S BEST IDEAS

SUBMIT
Already a GlobalSpec user? Log in.

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

Customize Your GlobalSpec Experience

Category: RF Power Detectors
Finish!
Privacy Policy

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.