TABLE OF CONTENTS While MBE has afforded the fabrication of material and device structures not previously possible, many of the early milestones in compound semiconductor growth were attained using other epitaxial film growth techniques. Bench marks for purity and device performance remain valid today. These alternative deposition technologies can be loosely grouped into liquid phase epitaxial (LPE) and vapor phase epitaxial (VPE) processes. A special category of VPE known as OMVPE (organometallic VPE) or MOCVD (metal-organic chemical vapor deposition) has promise as a production worthy process. Each of these epitaxial processes has distinct advantages and disadvantages discussed below. A comparison of GaAs epitaxial processes is shown in Table 1.
| Liquid Phase Epitaxy | Vapor-phase epitaxy | Molecular Beam Epitaxy | ||
|---|---|---|---|---|
| Chemical Vapor Deposition | Metal Organic CVD | |||
| Growth rate ( m/min) | ~ 1 | ~ 0.1 | ~ 0.1 | ~ 0.01 |
| Growth temperature ( C) | 850 | 750 | 750 | 550 |
| Thickness control ( ) | 500 | 250 | 25 | 5 |
| Interface width ( ) | ?50 | ~ 65 | < 10 | <5 |
| Dopant range (cm -3) | 10 13 10 19 | 10 13 10 19 | 10 14 10 19 | 10 14 10 19 |
| Mobility, 77 K (cm 2/Vs) (n-type GaAs) | 150,000 200,000 | 150,000 200,000 | 140,000 [a] | 160,000 [b] |
| [a]Nakanisi, T., Udagawa, T., Tanaka, A., and Kamei, K., J. Cry, Growth, 55:255 (1981) [b]Larkins, E. C., Hellman, E. S., Schlom, D. G., and Harris, J. S., Jr., Appl. Phys. Lett. (to be published) |
Historically, the early compound semiconductor growth...
