TABLE OF CONTENTS A large number of films have been grown by MBE as listed in Table 7. This section covers the process portion of MBE growth, concentrating on GaAs, and Si and II VI compounds to a lesser degree. The common analytical techniques to achieve and maintain high quality epitaxy are mentioned. A major concern of any MBE user is safety, of which the preliminaries will be included also in this section. For more specific process details, the readers may reference MBE reviews on III V compounds,[4][8][167] Si [168] [171] II-VI compounds, [172] [174] Zn-chalcogenides[175] and IV-VI compounds,[176] and specific papers on GaAs[177] and AlGaAs.[178]
| III-V
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| IV
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| II VI
|
| IV VI
|
| Insulators
|
