Semiconductor (Piezoresistive) Strain Gauges
from Piezo-Metrics
BACKED SEMICONDUCTOR STRAIN GAGES HALF-BRIDGE (SSGH) & FULL-BRIDGE (SSGF). Micron Instruments offers a wide range of semiconductor backed half and full bridge strain gages. Backed bridges are installed on a flexible high temperature insulator that can be bent around a one half inch radius... [See More]
- Construction: Semiconductor
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Nominal Resistance: 120
; 540; 345, 1050, 2000, 5000, 10000
- Operating Temperature: 278
- Gage Factor: 175
from Kistler Group
This tension and compression sensor Type 4576A... with its compact construction is designed for heavy-duty use in rough environments as well as for laboratory and test purposes. Measuring ranges from 0 ... 0,5 kN up to 0 ... 200 kN. Made of stainless steel. Simple mounting. Compact size [See More]
- Construction: Semiconductor
- Integral Bridge Circuitry: Full-Bridge
- Arrangement: Diaphragm
- Operating Temperature: -22 to 176
from PCB Piezotronics, Inc.
ICP ® piezoelectric strain sensor, titanium hsg. This high-resolution dynamic alternative to bond foil strain gauges uses a quartz sensing element in a durable, titanium housing. It has 0.0006 microstrain resolution, 5 volt output, 100k Hz frequency response and 0.5 gram mass for lightweight... [See More]
- Construction: Semiconductor
- Maximum Excitation: 30
- Operating Temperature: -65 to 250
from Piezo-Metrics
Standard BAR Gage Semiconductor Strain Gages. Micron semiconductor Strain Gages are made from "P" doped bulk silicon. This is a two terminal resistive device. The silicon is micro machined to shape thus eliminating molecular dislocation or cracks, thereby optimizing performance. [See More]
- Construction: Semiconductor
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Nominal Resistance: 120; 540; 750, 1050, 230, 15, 25, 30, 40 Ohms
- Operating Temperature: 500
- Termination Options: Leads
from Kistler Group
Load cells for tension and compression Type 4578A... can be used in the laboratory and in industrial environments. Measuring ranges from 0 ... 0,1 kN to 0 ... 10 kN Measuring accuracy better than 0,20 % FSO. Stainless steel construction. Simple mounting [See More]
- Construction: Semiconductor
- Integral Bridge Circuitry: Full-Bridge
- Arrangement: Diaphragm
- Operating Temperature: -4 to 122
from Piezo-Metrics
Standard "M" Semiconductor Strain Gages. Micron semiconductor Strain Gages are made from "P" doped bulk silicon. This is a two terminal resistive device. The silicon is micro machined to shape thus eliminating molecular dislocation or cracks, thereby optimizing performance. [See More]
- Construction: Semiconductor
- Nominal Resistance: 2500 Ohms
- Operating Temperature: 500
- Gage Factor: 140
from Kistler Group
Load cells for tension and compression Type 4579A... can be used in the laboratory and in industrial Environments. Measuring ranges from 0 ... 20 kN to 0 ... 500 kN Measuring accuracy better than 0,20 % FSO. Stainless steel construction. Simple mounting [See More]
- Construction: Semiconductor
- Integral Bridge Circuitry: Full-Bridge
- Arrangement: Diaphragm
- Operating Temperature: -4 to 122
from Piezo-Metrics
Micron Instruments offers a line of Semiconductor - Backed Gages. Easy to install. Mounted on a flexible insulated circuit with versatile solder pads makes this device easy to install. The gage and gold wires are over-coated to seal out moisture and to provide additional protection of the gage... [See More]
- Construction: Semiconductor
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Nominal Resistance: 120; 540; 15, 25, 30, 40, 230, 345 1050, 1125, 2000, 5000, 10000
- Operating Temperature: 278
- Gage Factor: 175
from Kistler Group
A high value/performance ratio and robust design characterize the compressive force miniature load cell Type 4577A... even in the high measuring ranges. Measuring ranges from 0 ... 0,1 kN up to 0 ... 200 kN. Small size. For static and dynamic measurements. Stainless steel construction. Standardized... [See More]
- Construction: Semiconductor
- Integral Bridge Circuitry: Full-Bridge
- Arrangement: Diaphragm
- Operating Temperature: -4 to 212
from Piezo-Metrics
Standard "U" Shape Semiconductor Strain Gages. Micron semiconductor Strain Gages are made from "P" doped bulk silicon. This is a two terminal resistive device. The silicon is micro machined to shape thus eliminating molecular dislocation or cracks, thereby optimizing performance. [See More]
- Construction: Semiconductor
-
Nominal Resistance: 540; 1000; 3000, 325, 10000 Ohms
- Operating Temperature: 500
- Gage Factor: 175
from Kistler Group
Measures forces of almost any size indirectly though strain. Preloaded for measurement of tensile as well as compression forces, can be mounted at virtually any depth in the structure. [See More]
- Construction: Semiconductor
- Integral Bridge Circuitry: None
- Arrangement: Uniaxial
- Strain Range: 1500