Parallel NVRAM

95 Results
1031428 [M48Z02-70PC1 from STMicroelectronics, Inc.]
from RS Components, Ltd.

ZEROPOWER ® non-volatile RAM products integrate low-power SRAMs with a power-fail control circuit and a long-life lithium battery. Memory Size = 16kbit. Organisation = 2K x 8 bit. Interface Type = Parallel. Data Bus Width = 8bit. Maximum Random Access Time = 70ns. Mounting Type = Through Hole. [See More]

  • Bus Type: Parallel; Parallel
  • Access Time: 70
  • Density: 16
  • Package Type: PCDIP
Integrated Circuits (ICs) - FRAM -- FM22L16 [FM22L16 from Cypress Semiconductor Corp.]
from Acme Chip Technology Co., Limited

Integrated Circuits (ICs) - FRAM [See More]

  • Bus Type: Parallel
  • Supply Voltage: 2.7V ~ 3.6V
  • Type: FRAM
Memory -- 27C128-12 [27C128-12 from Rochester Electronics]
from Shenzhen Shengyu Electronics Technology Limited

27C128-12 [See More]

  • Bus Type: Parallel
  • Supply Voltage: 4.5V ~ 5.5V
  • Access Time: 120
  • Package Type: Bulk
1031455 [M48Z12-70PC1 from STMicroelectronics, Inc.]
from RS Components, Ltd.

ZEROPOWER ® non-volatile RAM products integrate low-power SRAMs with a power-fail control circuit and a long-life lithium battery. Memory Size = 16kbit. Organisation = 2K x 8 bit. Interface Type = Parallel. Data Bus Width = 8bit. Maximum Random Access Time = 70ns. Mounting Type = Through Hole. [See More]

  • Bus Type: Parallel; Parallel
  • Access Time: 70
  • Density: 16
  • Package Type: PCDIP
Integrated Circuits (ICs) - Memory -- BQ4010YMA-150 [BQ4010YMA-150 from Texas Instruments]
from Acme Chip Technology Co., Limited

IC NVSRAM 64KBIT PARALLEL 28DIP [See More]

  • Bus Type: Parallel
  • Access Time: 150
  • Type: NVSRAM
  • Supply Voltage: 4.5V ~ 5.5V
Memory -- 27C2001-15 [27C2001-15 from STMicroelectronics]
from Shenzhen Shengyu Electronics Technology Limited

27C2001-15 [See More]

  • Bus Type: Parallel
  • Supply Voltage: 4.5V ~ 5.5V
  • Access Time: 150
  • Package Type: DIP; Tube
1031581 [M48Z18-100PC1 from STMicroelectronics, Inc.]
from RS Components, Ltd.

ZEROPOWER ® non-volatile RAM products integrate low-power SRAMs with a power-fail control circuit and a long-life lithium battery. Memory Size = 64kbit. Organisation = 8K x 8 bit. Interface Type = Parallel. Data Bus Width = 8bit. Maximum Random Access Time = 100ns. Mounting Type = Through Hole. [See More]

  • Bus Type: Parallel; Parallel
  • Access Time: 100
  • Density: 64
  • Package Type: PCDIP
Integrated Circuits (ICs) - Memory -- BQ4010YMA-150 [BQ4010YMA-150 from Shenzhen Shengyu Electronics Technology Limited]
from Acme Chip Technology Co., Limited

NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 150ns 28-DIP Module (18.42x37.72) [See More]

  • Bus Type: Parallel
  • Access Time: 150
  • Type: NVSRAM
  • Supply Voltage: 4.5 V ~ 5.5 V
Memory -- 27C256A-20 [27C256A-20 from Cypress Semiconductor Corp.]
from Shenzhen Shengyu Electronics Technology Limited

27C256A-20 [See More]

  • Bus Type: Parallel
  • Supply Voltage: 4.5V ~ 5.5V
  • Access Time: 200
  • Package Type: TSOP; Bulk
1242932 [CY14E256LA-SZ45XI from Cypress Semiconductor Corp.]
from RS Components, Ltd.

nvSRAM,32KB,45ns,5V,SOIC32 - Memory Chips - NVRAM Memory Chips [See More]

  • Bus Type: Parallel; Parallel
  • Access Time: 45
  • Density: 256
  • Package Type: SOIC
Integrated Circuits (ICs) - Memory -- BQ4010YMA-200N [BQ4010YMA-200N from Texas Instruments]
from Acme Chip Technology Co., Limited

Integrated Circuits (ICs) - Memory [See More]

  • Bus Type: Parallel
  • Access Time: 200
  • Type: NVSRAM
  • Supply Voltage: 4.5V ~ 5.5V
Memory -- 27C256Q-150 [27C256Q-150 from onsemi]
from Shenzhen Shengyu Electronics Technology Limited

27C256Q-150 [See More]

  • Bus Type: Parallel
  • Supply Voltage: 4.5V ~ 5.5V
  • Access Time: 150
  • Package Type: DIP; Tube
1242979 [FM16W08-SG from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Bus Type: Parallel; Parallel
  • Density: 64
  • Type: FRAM
  • Access Time: 70
Integrated Circuits (ICs) - Memory -- BQ4011YMA-150N
from Acme Chip Technology Co., Limited

IC NVSRAM 256KBIT PARALLEL 28DIP [See More]

  • Bus Type: Parallel
  • Access Time: 150
  • Type: NVSRAM
  • Supply Voltage: 4.5V ~ 5.5V
Memory -- 27C64A [27C64A from STMicroelectronics]
from Shenzhen Shengyu Electronics Technology Limited

27C64A [See More]

  • Bus Type: Parallel
  • Supply Voltage: 4.5V ~ 5.5V
  • Access Time: 200
  • Package Type: DIP; Tube
1242981 [FM1808B-SG from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Bus Type: Parallel; Parallel
  • Density: 256
  • Type: FRAM
  • Access Time: 70
Integrated Circuits (ICs) - Memory -- BQ4013LYMA-70N [BQ4013LYMA-70N from Texas Instruments]
from Acme Chip Technology Co., Limited

IC NVSRAM 1MBIT 70NS 32DIP [See More]

  • Bus Type: Parallel
  • Access Time: 70
  • Type: NVSRAM
  • Supply Voltage: 3V ~ 3.6V
Memory -- 28F256J3C [28F256J3C from Micron Technology, Inc.]
from Shenzhen Shengyu Electronics Technology Limited

28F256J3C [See More]

  • Bus Type: Parallel
  • Supply Voltage: 2.7V ~ 3.6V
  • Access Time: 125
  • Package Type: Tray
1242992 [FM28V202A-TG from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Bus Type: Parallel; Parallel
  • Density: 2000
  • Type: FRAM
  • Access Time: 60
Integrated Circuits (ICs) - Memory -- BQ4015YMA-70N [BQ4015YMA-70N from Texas Instruments]
from Acme Chip Technology Co., Limited

Integrated Circuits (ICs) - Memory [See More]

  • Bus Type: Parallel
  • Access Time: 70
  • Type: NVSRAM
  • Supply Voltage: 4.5V ~ 5.5V
Memory -- 293A50 [293A50 from Cypress Semiconductor Corp.]
from Shenzhen Shengyu Electronics Technology Limited

293A50 [See More]

  • Bus Type: Parallel
  • Supply Voltage: 4.5V ~ 5.5V
  • Access Time: 50
  • Package Type: Bulk
1242994 [STK12C68-SF45 from Cypress Semiconductor Corp.]
from RS Components, Ltd.

nvSRAM,8KB,45ns,5V,SOIC28 - Memory Chips - NVRAM Memory Chips [See More]

  • Bus Type: Parallel; Parallel
  • Access Time: 45
  • Density: 64
  • Package Type: SOIC
Integrated Circuits (ICs) - Memory -- CY14B101K-SP45XC [CY14B101K-SP45XC from Cypress Semiconductor Corp.]
from Acme Chip Technology Co., Limited

IC NVSRAM 1MBIT PARALLEL 48SSOP [See More]

  • Bus Type: Parallel
  • Access Time: 45
  • Type: NVSRAM
  • Supply Voltage: 2.7V ~ 3.6V
Memory -- 29F2G08AAC [29F2G08AAC from Micron Technology, Inc.]
from Shenzhen Shengyu Electronics Technology Limited

29F2G08AAC [See More]

  • Bus Type: Parallel
  • Package Type: TSOP; Tape & Reel (TR)
  • Supply Voltage: 2.7V ~ 3.6V
  • Operating Temperature: 0 to 70
1242995 [STK12C68-SF45I from Cypress Semiconductor Corp.]
from RS Components, Ltd.

nvSRAM,8KB,45ns,5V,SOIC28 - Memory Chips - NVRAM Memory Chips [See More]

  • Bus Type: Parallel; Parallel
  • Access Time: 45
  • Density: 64
  • Package Type: SOIC
Integrated Circuits (ICs) - Memory -- CY14B101L-SZ25XC [CY14B101L-SZ25XC from Cypress Semiconductor Corp.]
from Acme Chip Technology Co., Limited

NON-VOLATILE SRAM, 128KX8, 25NS2 [See More]

  • Bus Type: Parallel
  • Access Time: 25
  • Type: NVSRAM
  • Supply Voltage: 2.7V ~ 3.6V
Memory -- 29F32G08FAAWP:A [29F32G08FAAWP:A from Micron Technology, Inc.]
from Shenzhen Shengyu Electronics Technology Limited

29F32G08FAAWP:A [See More]

  • Bus Type: Parallel
  • Package Type: TSOP; Tape & Reel (TR)
  • Supply Voltage: 2.7V ~ 3.6V
  • Operating Temperature: 0 to 70
1254205 [FM18W08-SG from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Bus Type: Parallel; Parallel
  • Density: 256
  • Type: FRAM
  • Access Time: 70
Integrated Circuits (ICs) - Memory -- CY14B101LA-SZ25XI [CY14B101LA-SZ25XI from Cypress Semiconductor Corp.]
from Acme Chip Technology Co., Limited

IC NVSRAM 1MBIT PARALLEL 32SOIC [See More]

  • Bus Type: Parallel
  • Access Time: 25
  • Type: NVSRAM
  • Supply Voltage: 2.7V ~ 3.6V
Memory -- AM27S19 [AM27S19 from Advanced Micro Devices, Inc.]
from Shenzhen Shengyu Electronics Technology Limited

AM27S19 [See More]

  • Bus Type: Parallel
  • Supply Voltage: 4.75V ~ 5.25V
  • Access Time: 35
  • Package Type: PLCC; Bulk
1254206 [FM22L16-55-TG from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Bus Type: Parallel; Parallel
  • Density: 4000
  • Type: FRAM
  • Access Time: 55
Integrated Circuits (ICs) - Memory -- CY14B101LA-ZS45XI [CY14B101LA-ZS45XI from Cypress Semiconductor Corp.]
from Acme Chip Technology Co., Limited

IC NVSRAM 1MBIT PAR 44TSOP II [See More]

  • Bus Type: Parallel
  • Access Time: 45
  • Type: NVSRAM
  • Supply Voltage: 2.7V ~ 3.6V
Memory -- AM29DL800BT90 [AM29DL800BT90 from Advanced Micro Devices, Inc.]
from Shenzhen Shengyu Electronics Technology Limited

AM29DL800BT90 [See More]

  • Bus Type: Parallel
  • Supply Voltage: 2.7V ~ 3.6V
  • Access Time: 90
  • Package Type: TSOP; Bulk
1254229 [FM28V020-SG from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Bus Type: Parallel; Parallel
  • Density: 256
  • Type: FRAM
  • Access Time: 70
Integrated Circuits (ICs) - Memory -- CY14B104M-ZSP45XI [CY14B104M-ZSP45XI from Cypress Semiconductor Corp.]
from Acme Chip Technology Co., Limited

IC NVSRAM 4MBIT PAR 54TSOP II [See More]

  • Bus Type: Parallel
  • Access Time: 45
  • Type: NVSRAM
  • Supply Voltage: 2.7V ~ 3.6V
Memory -- AM29F002BT [AM29F002BT from Cypress Semiconductor Corp.]
from Shenzhen Shengyu Electronics Technology Limited

AM29F002BT [See More]

  • Bus Type: Parallel
  • Supply Voltage: 4.75V ~ 5.25V
  • Access Time: 55
  • Package Type: PLCC; Tube
1254230 [FM28V020-TG from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Bus Type: Parallel; Parallel
  • Density: 256
  • Type: FRAM
  • Access Time: 70
Integrated Circuits (ICs) - Memory -- CY14B104NA-BA25XI [CY14B104NA-BA25XI from Cypress Semiconductor Corp.]
from Acme Chip Technology Co., Limited

IC NVSRAM 4MBIT PARALLEL 48FBGA [See More]

  • Bus Type: Parallel
  • Access Time: 25
  • Type: NVSRAM
  • Supply Voltage: 2.7V ~ 3.6V
Memory -- AM29F016D [AM29F016D from Advanced Micro Devices, Inc.]
from Shenzhen Shengyu Electronics Technology Limited

AM29F016D [See More]

  • Bus Type: Parallel
  • Supply Voltage: 4.5V ~ 5.5V
  • Access Time: 90
  • Package Type: TSOP; Bulk
1254231 [FM28V100-TG from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Bus Type: Parallel; Parallel
  • Density: 1000
  • Type: FRAM
  • Access Time: 60
Integrated Circuits (ICs) - Memory -- CY14B104NA-ZS45XI [CY14B104NA-ZS45XI from Cypress Semiconductor Corp.]
from Acme Chip Technology Co., Limited

IC NVSRAM 4MBIT PAR 44TSOP II [See More]

  • Bus Type: Parallel
  • Access Time: 45
  • Type: NVSRAM
  • Supply Voltage: 2.7V ~ 3.6V
Memory -- CAT28C16AGI-20T [CAT28C16AGI-20T from onsemi]
from Shenzhen Shengyu Electronics Technology Limited

IC EEPROM 16K PARALLEL 32PLCC [See More]

  • Bus Type: Parallel
  • Supply Voltage: 4.5 V ~ 5.5 V
  • Access Time: 200
  • Package Type: PLCC; 32-PLCC (11.43x13.97)
132621 [DS1220AB-100+ from Maxim Integrated]
from RS Components, Ltd.

Non-volatile RAM,DS1220AB-100 2kx8bit - Memory Chips - NVRAM Memory Chips [See More]

  • Bus Type: Parallel; Parallel
  • Access Time: 100
  • Density: 16
  • Package Type: EDIP
Integrated Circuits (ICs) - Memory -- CY14B116S-BZ25XIT [CY14B116S-BZ25XIT from Cypress Semiconductor Corp.]
from Acme Chip Technology Co., Limited

IC NVSRAM 16MBIT PAR 165FBGA [See More]

  • Bus Type: Parallel
  • Access Time: 25
  • Type: NVSRAM
  • Supply Voltage: 2.7V ~ 3.6V
Memory -- CAT28C16AL20 [CAT28C16AL20 from onsemi]
from Shenzhen Shengyu Electronics Technology Limited

IC EEPROM 16K PARALLEL 24DIP [See More]

  • Bus Type: Parallel
  • Supply Voltage: 4.5 V ~ 5.5 V
  • Access Time: 200
  • Package Type: DIP; 24-PDIP
132659 [DS1220AD-200+ from Maxim Integrated]
from RS Components, Ltd.

Non-volatile RAM,DS1220AD-200 2kx8bit - Memory Chips - NVRAM Memory Chips [See More]

  • Bus Type: Parallel; Parallel
  • Access Time: 200
  • Density: 16
  • Package Type: EDIP
Integrated Circuits (ICs) - Memory -- DS1220AD-100IND [DS1220AD-100IND from Analog Devices, Inc.]
from Acme Chip Technology Co., Limited

IC NVSRAM 16KBIT PARALLEL 24EDIP [See More]

  • Bus Type: Parallel
  • Access Time: 100
  • Type: NVSRAM
  • Supply Voltage: 4.5V ~ 5.5V
Memory -- CAT28C64BH1312 [CAT28C64BH1312 from onsemi]
from Shenzhen Shengyu Electronics Technology Limited

IC EEPROM 64K PARALLEL 28TSOP [See More]

  • Bus Type: Parallel
  • Supply Voltage: 4.5 V ~ 5.5 V
  • Access Time: 120
  • Package Type: SSOP; TSOP; TSSOP; 28-TSOP
132671 [DS1225AB-150+ from Maxim Integrated]
from RS Components, Ltd.

Non-volatile RAM,DS1225AB-150 8kx8bit - Memory Chips - NVRAM Memory Chips [See More]

  • Bus Type: Parallel; Parallel
  • Access Time: 150
  • Density: 64
  • Package Type: EDIP
Integrated Circuits (ICs) - Memory -- DS1225AB-150 [DS1225AB-150 from Analog Devices, Inc.]
from Acme Chip Technology Co., Limited

IC NVSRAM 64KBIT PARALLEL 28EDIP [See More]

  • Bus Type: Parallel
  • Access Time: 150
  • Type: NVSRAM
  • Supply Voltage: 4.75V ~ 5.25V
Memory -- CAT28C64BL12 [CAT28C64BL12 from onsemi]
from Shenzhen Shengyu Electronics Technology Limited

IC EEPROM 64K PARALLEL 28DIP [See More]

  • Bus Type: Parallel
  • Supply Voltage: 4.5 V ~ 5.5 V
  • Access Time: 120
  • Package Type: DIP; 28-PDIP
132766 [DS1225AD-150+ from Maxim Integrated]
from RS Components, Ltd.

Non-volatile RAM,DS1225AD-150 8kx8bit - Memory Chips - NVRAM Memory Chips [See More]

  • Bus Type: Parallel; Parallel
  • Access Time: 150
  • Density: 64
  • Package Type: EDIP
Integrated Circuits (ICs) - Memory -- DS1245AB-100 [DS1245AB-100 from Analog Devices, Inc.]
from Acme Chip Technology Co., Limited

IC NVSRAM 1MBIT PARALLEL 32EDIP [See More]

  • Bus Type: Parallel
  • Access Time: 100
  • Type: NVSRAM
  • Supply Voltage: 4.75V ~ 5.25V
Memory -- CAT28F010L12 [CAT28F010L12 from onsemi]
from Shenzhen Shengyu Electronics Technology Limited

IC FLASH 1M PARALLEL 32DIP [See More]

  • Bus Type: Parallel
  • Supply Voltage: 4.5 V ~ 5.5 V
  • Access Time: 120
  • Package Type: DIP; 32-PDIP
132772 [DS1230AB-70+ from Maxim Integrated]
from RS Components, Ltd.

Non-volatile RAM,DS1230AB-70 32kx8bit - Memory Chips - NVRAM Memory Chips [See More]

  • Bus Type: Parallel; Parallel
  • Access Time: 70
  • Density: 256
  • Package Type: EDIP
Integrated Circuits (ICs) - Memory -- DS1250ABP-70IND+ [DS1250ABP-70IND+ from Analog Devices, Inc.]
from Acme Chip Technology Co., Limited

IC NVSRAM 4MBIT PAR 34PWRCAP [See More]

  • Bus Type: Parallel
  • Access Time: 70
  • Type: NVSRAM
  • Supply Voltage: 4.75V ~ 5.25V
Memory -- CAT28LV65WI-25 [CAT28LV65WI-25 from onsemi]
from Shenzhen Shengyu Electronics Technology Limited

CAT28LV65WI-25 [See More]

  • Bus Type: Parallel
  • Supply Voltage: 3V ~ 3.6V
  • Access Time: 250
  • Package Type: SOIC; Tube
132801 [DS1230Y-70+ from Maxim Integrated]
from RS Components, Ltd.

Non-volatile RAM,DS1230Y-70 32kx8bit - Memory Chips - NVRAM Memory Chips [See More]

  • Bus Type: Parallel; Parallel
  • Access Time: 70
  • Density: 256
  • Package Type: EDIP
Integrated Circuits (ICs) - Memory -- DS1258AB-70IND# [DS1258AB-70IND# from Analog Devices, Inc.]
from Acme Chip Technology Co., Limited

IC NVSRAM 2MBIT PARALLEL 40EDIP [See More]

  • Bus Type: Parallel
  • Access Time: 70
  • Type: NVSRAM
  • Supply Voltage: 4.75V ~ 5.25V
Memory -- CY14B101K-SP45XC [CY14B101K-SP45XC from Cypress Semiconductor Corp.]
from Shenzhen Shengyu Electronics Technology Limited

IC NVSRAM 1M PARALLEL 48SSOP [See More]

  • Bus Type: Parallel
  • Access Time: 45
  • Type: NVSRAM
  • Supply Voltage: 2.7 V ~ 3.6 V
132817 [DS1230AB-120+ from Maxim Integrated]
from RS Components, Ltd.

Non-volatile RAM,DS1230AB-120 32kx8bit - Memory Chips - NVRAM Memory Chips [See More]

  • Bus Type: Parallel; Parallel
  • Access Time: 120
  • Density: 256
  • Package Type: EDIP
Integrated Circuits (ICs) - Memory -- DS1265Y-100 [DS1265Y-100 from Analog Devices, Inc.]
from Acme Chip Technology Co., Limited

IC NVSRAM 8MBIT PARALLEL 36EDIP [See More]

  • Bus Type: Parallel
  • Access Time: 100
  • Type: NVSRAM
  • Supply Voltage: 4.5V ~ 5.5V
Memory -- CY14B101L-SZ35XC [CY14B101L-SZ35XC from Cypress Semiconductor Corp.]
from Shenzhen Shengyu Electronics Technology Limited

IC NVSRAM 1M PARALLEL 32SOIC [See More]

  • Bus Type: Parallel
  • Access Time: 35
  • Type: NVSRAM
  • Supply Voltage: 2.7 V ~ 3.6 V
132823 [DS1230Y-120+ from Maxim Integrated]
from RS Components, Ltd.

Non-volatile RAM,DS1230Y-120 32kx8bit - Memory Chips - NVRAM Memory Chips [See More]

  • Bus Type: Parallel; Parallel
  • Access Time: 120
  • Density: 256
  • Package Type: EDIP
Integrated Circuits (ICs) - Memory -- DS2045AB-70# [DS2045AB-70# from Analog Devices, Inc.]
from Acme Chip Technology Co., Limited

IC NVSRAM 1MBIT PARALLEL 256BGA [See More]

  • Bus Type: Parallel
  • Access Time: 70
  • Type: NVSRAM
  • Supply Voltage: 4.75V ~ 5.25V
Memory -- CY14B101LA-BA25XI [CY14B101LA-BA25XI from Cypress Semiconductor Corp.]
from Shenzhen Shengyu Electronics Technology Limited

IC NVSRAM 1M PARALLEL 48FBGA [See More]

  • Bus Type: Parallel
  • Access Time: 25
  • Type: NVSRAM
  • Supply Voltage: 2.7 V ~ 3.6 V
132839 [DS1245Y-70+ from Maxim Integrated]
from RS Components, Ltd.

Nonvolatile RAM,DS1245Y-70 128kx8bit 1Mb - Memory Chips - NVRAM Memory Chips [See More]

  • Bus Type: Parallel; Parallel
  • Access Time: 70
  • Density: 1000
  • Package Type: EDIP
Integrated Circuits (ICs) - Memory -- FM16W08-SG [FM16W08-SG from Cypress Semiconductor Corp.]
from Acme Chip Technology Co., Limited

IC FRAM 64KBIT PARALLEL 28SOIC [See More]

  • Bus Type: Parallel
  • Supply Voltage: 2.7V ~ 5.5V
  • Type: FRAM
  • Package Type: SOIC; 28-SOIC (0.295, 7.50mm Width)
Memory -- CY14B104L-ZS45XC [CY14B104L-ZS45XC from Cypress Semiconductor Corp.]
from Shenzhen Shengyu Electronics Technology Limited

IC NVSRAM 4M PARALLEL 44TSOP II [See More]

  • Bus Type: Parallel
  • Access Time: 45
  • Type: NVSRAM
  • Supply Voltage: 2.7 V ~ 3.6 V
132845 [DS1245Y-120+ from Maxim Integrated]
from RS Components, Ltd.

Non-volatile RAM,DS1245Y-120 128kx8bit - Memory Chips - NVRAM Memory Chips [See More]

  • Bus Type: Parallel; Parallel
  • Access Time: 120
  • Density: 1000
  • Package Type: EDIP
Integrated Circuits (ICs) - Memory -- FM18W08-SG [FM18W08-SG from Cypress Semiconductor Corp.]
from Acme Chip Technology Co., Limited

IC FRAM 256KBIT PARALLEL 28SOIC [See More]

  • Bus Type: Parallel
  • Supply Voltage: 2.7V ~ 5.5V
  • Type: FRAM
  • Package Type: SOIC; 28-SOIC (0.295, 7.50mm Width)
Memory -- CY14B116N-Z30XI [CY14B116N-Z30XI from Cypress Semiconductor Corp.]
from Shenzhen Shengyu Electronics Technology Limited

IC NVSRAM 16M PARALLEL 48TSOP I [See More]

  • Bus Type: Parallel
  • Access Time: 30
  • Type: NVSRAM
  • Supply Voltage: 2.7 V ~ 3.6 V
134469 [DS1230AB-100+ from Maxim Integrated]
from RS Components, Ltd.

Nonvolatile RAM,DS1230AB-100 32kx8bit - Memory Chips - NVRAM Memory Chips [See More]

  • Bus Type: Parallel; Parallel
  • Access Time: 100
  • Density: 256
  • Package Type: EDIP
Integrated Circuits (ICs) - Memory -- FM28V100-TG [FM28V100-TG from Cypress Semiconductor Corp.]
from Acme Chip Technology Co., Limited

IC FRAM 1MBIT PARALLEL 32TSOP I [See More]

  • Bus Type: Parallel
  • Access Time: 90
  • Type: FRAM
  • Supply Voltage: 2V ~ 3.6V
1024k Nonvolatile SRAM -- DS1245AB
from Maxim Integrated

The DS1245 1024k Nonvolatile (NV) SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a... [See More]

  • Bus Type: Parallel
  • Supply Voltage: 5.25
  • Density: 1024
  • Package Type: EDIP, PCAP
1024k Nonvolatile SRAM with Battery Monitor -- DS1345AB
from Maxim Integrated

The DS1345 1024k Nonvolatile (NV) SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the... [See More]

  • Bus Type: Parallel
  • Supply Voltage: 5.25
  • Density: 1024
  • Package Type: PCAP
16k Nonvolatile SRAM -- DS1220AB
from Maxim Integrated

The DS1220AB and DS1220AD 16k Nonvolatile (NV) SRAMs are 16,384-bit, fully static, NV SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs,... [See More]

  • Bus Type: Parallel
  • Supply Voltage: 5.25
  • Density: 16
  • Package Type: EDIP
16M Nonvolatile SRAM -- DS1270AB
from Maxim Integrated

The DS1270 16M Nonvolatile SRAMs are 16,777,216-bit, fully static nonvolatile SRAMs organized as 2,097,152 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs the... [See More]

  • Bus Type: Parallel
  • Supply Voltage: 5.25
  • Density: 16000
  • Package Type: EDIP
2048k Nonvolatile SRAM -- DS1249AB
from Maxim Integrated

The DS1249 2048k Nonvolatile (NV) SRAMs are 2,097,152-bit, fully static, nonvolatile SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition... [See More]

  • Bus Type: Parallel
  • Supply Voltage: 5.25
  • Density: 2048
  • Package Type: EDIP
256k Nonvolatile SRAM -- DS1230AB
from Maxim Integrated

The DS1230 256k Nonvolatile (NV) SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs,... [See More]

  • Bus Type: Parallel
  • Supply Voltage: 5.25
  • Density: 256
  • Package Type: EDIP, PCAP
256k Nonvolatile SRAM with Battery Monitor -- DS1330AB
from Maxim Integrated

The DS1330 256k Nonvolatile (NV) SRAMs are 262,144-bit, fully static, NV SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium... [See More]

  • Bus Type: Parallel
  • Supply Voltage: 5.25
  • Density: 256
  • Package Type: PCAP
3.3V 1024k Nonvolatile SRAM -- DS1245W
from Maxim Integrated

The DS1245W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition... [See More]

  • Bus Type: Parallel
  • Supply Voltage: 3.6V
  • Density: 1024
  • Package Type: EDIP, PCAP
3.3V 1024k Nonvolatile SRAM with Battery Monitor -- DS1345W
from Maxim Integrated

The DS1345W 3.3V 1024k NV SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the... [See More]

  • Bus Type: Parallel
  • Supply Voltage: 3.6V
  • Density: 1024
  • Package Type: PCAP
3.3V 16Mb Nonvolatile SRAM -- DS1270W
from Maxim Integrated

The DS1270W 16Mb nonvolatile (NV) SRAMs are 16,777,216-bit, fully static, NV SRAMs organized as 2,097,152 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the... [See More]

  • Bus Type: Parallel
  • Supply Voltage: 3.6V
  • Density: 16000
  • Package Type: EDIP
3.3V 2048kb Nonvolatile SRAM -- DS1249W
from Maxim Integrated

The DS1249W 2048kb nonvolatile (NV) SRAMs are 2,097,152-bit, fully static, NV SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the... [See More]

  • Bus Type: Parallel
  • Supply Voltage: 3.6V
  • Density: 2048
  • Package Type: EDIP
3.3V 256k Nonvolatile SRAM -- DS1230W
from Maxim Integrated

The DS1230W 3.3V 256k NV SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the... [See More]

  • Bus Type: Parallel
  • Supply Voltage: 3.6V
  • Density: 256
  • Package Type: EDIP, PCAP
3.3V 256k Nonvolatile SRAM with Battery Monitor -- DS1330W
from Maxim Integrated

The DS1330W 3.3V 256k NV SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium... [See More]

  • Bus Type: Parallel
  • Supply Voltage: 3.6V
  • Density: 256
  • Package Type: PCAP
3.3V 4096k Nonvolatile SRAM -- DS1250W
from Maxim Integrated

The DS1250W 3.3V 4096k NV SRAM is a 4,194,304-bit, fully static, nonvolatile SRAM organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the... [See More]

  • Bus Type: Parallel
  • Supply Voltage: 3.6V
  • Density: 4096
  • Package Type: EDIP, PCAP
3.3V 4096K Nonvolatile SRAM with Battery Monitor -- DS1350W
from Maxim Integrated

The DS1350W 3.3V 4096k Nonvolatile SRAM is a 4,194,304-bit, fully static, nonvolatile SRAM organized as 524,288 words by eight bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition... [See More]

  • Bus Type: Parallel
  • Supply Voltage: 3.6V
  • Density: 4096
  • Package Type: PCAP
3.3V 8Mb Nonvolatile SRAM -- DS1265W
from Maxim Integrated

The DS1265W 8Mb nonvolatile (NV) SRAMs are 8,388,608-bit, fully static, NV SRAMs organized as 1,048,576 words by 8-bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the... [See More]

  • Bus Type: Parallel
  • Supply Voltage: 3.6V
  • Density: 8000
  • Package Type: EDIP
4096k Nonvolatile SRAM -- DS1250AB
from Maxim Integrated

The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition... [See More]

  • Bus Type: Parallel
  • Supply Voltage: 5.25
  • Density: 4096
  • Package Type: EDIP, PCAP
4096k Nonvolatile SRAM with Battery Monitor -- DS1350AB
from Maxim Integrated

The DS1350 4096k Nonvolatile (NV) SRAMs are 4,194,304 bit, fully static, NV SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the... [See More]

  • Bus Type: Parallel
  • Supply Voltage: 5.25
  • Density: 4096
  • Package Type: PCAP
64k Nonvolatile SRAM -- DS1225AB
from Maxim Integrated

The DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile (NV) SRAMs organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium... [See More]

  • Bus Type: Parallel
  • Supply Voltage: 5.25
  • Density: 64
  • Package Type: EDIP
8M Nonvolatile SRAM -- DS1265AB
from Maxim Integrated

The DS1265 8M Nonvolatile SRAMs are 8,388,608-bit, fully static nonvolatile SRAMs organized as 1,048,576 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs the... [See More]

  • Bus Type: Parallel
  • Supply Voltage: 5.25
  • Density: 8000
  • Package Type: EDIP