3.6 V NVRAM

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

• Supply Voltage: 3.6V; 3.6 V
• Bus Type: SPI; Serial-SPI

• Type: FRAM
• Density: 128

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

• Supply Voltage: 3.6V; 3.6 V
• Bus Type: SPI; Serial-SPI

• Type: FRAM
• Density: 256

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

• Supply Voltage: 3.6V; 3.6 V
• Bus Type: SPI; Serial-SPI

• Type: FRAM
• Density: 1000

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

• Supply Voltage: 3.6V; 3.6 V
• Bus Type: SPI; Serial-SPI

• Type: FRAM
• Density: 2000

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

• Supply Voltage: 3.6V; 3.6 V
• Bus Type: SPI; Serial-SPI

• Type: FRAM
• Density: 2000

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

• Supply Voltage: 3.6V; 3.6 V
• Bus Type: SPI; Serial-SPI

• Type: FRAM
• Density: 1000

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

• Supply Voltage: 3.6V; 3.6 V
• Bus Type: Serial-2 Wire, Serial-I2C; Serial-2 Wire; I2C

• Type: FRAM
• Density: 64

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

• Supply Voltage: 3.6V; 3.6 V
• Bus Type: Serial-2 Wire, Serial-I2C; Serial-2 Wire; I2C

• Type: FRAM
• Density: 1000

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

• Supply Voltage: 3.6V; 3.6 V
• Bus Type: Serial-2 Wire, Serial-I2C; Serial-2 Wire; I2C

• Type: FRAM
• Density: 1000

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

• Supply Voltage: 3.6V; 3.6 V
• Bus Type: SPI; Serial-SPI

• Type: FRAM
• Density: 64

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

• Supply Voltage: 3.6V; 3.6 V
• Bus Type: SPI; Serial-SPI

• Type: FRAM
• Density: 4

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

• Supply Voltage: 3.6V; 3.6 V
• Bus Type: SPI; Serial-SPI

• Type: FRAM
• Density: 4

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

• Supply Voltage: 3.6V; 3.6 V
• Bus Type: SPI; Serial-SPI

• Type: FRAM
• Density: 16

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

• Supply Voltage: 3.6V; 3.6 V
• Bus Type: SPI; Serial-SPI

• Type: FRAM
• Density: 512

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

• Supply Voltage: 3.6V; 3.6 V
• Bus Type: Parallel; Parallel

• Type: FRAM
• Density: 256

Integrated devices that includes the most commonly needed functions for processor-based systems. Serial Nonvolatile FRAM Memory. Real-time Clock (RTC). Low Voltage Reset. Watchdog Timer. Early Power-Fail Warning/NMI. Two 16-bit Event Counters. Serial Number with Write-lock for Security. [See More]

• Supply Voltage: 3.6V; 3.6 V
• Bus Type: Serial-2 Wire, Serial-I2C; Serial-2 Wire; I2C

• Type: FRAM
• Density: 256

Integrated devices that includes the most commonly needed functions for processor-based systems. Serial Nonvolatile FRAM Memory. Real-time Clock (RTC). Low Voltage Reset. Watchdog Timer. Early Power-Fail Warning/NMI. Two 16-bit Event Counters. Serial Number with Write-lock for Security. [See More]

• Supply Voltage: 3.6V; 3.6 V
• Bus Type: SPI; Serial-SPI

• Type: FRAM
• Density: 256

Integrated devices that includes the most commonly needed functions for processor-based systems. Serial Nonvolatile FRAM Memory. Real-time Clock (RTC). Low Voltage Reset. Watchdog Timer. Early Power-Fail Warning/NMI. Two 16-bit Event Counters. Serial Number with Write-lock for Security. [See More]

• Supply Voltage: 3.6V; 3.6 V
• Bus Type: Serial-I2C; I2C

• Type: FRAM
• Density: 256

BENAND â „ ¢ is SLC (Single Level Cell) NAND Flash Memory with build in ECC (Error Correction Code). Memory Size = 1Gbit. Organisation = 2048 x 8 bit. Data Bus Width = 8bit. Maximum Random Access Time = 120 µs. Mounting Type = Surface Mount. Package Type = TFBGA. Pin Count =... [See More]

• Supply Voltage: 3.6V; 3.6 V
• Density: 1000000

• Type: FRAM
• Access Time: 120000

BENAND â „ ¢ is SLC (Single Level Cell) NAND Flash Memory with build in ECC (Error Correction Code). Memory Size = 2Gbit. Organisation = 2048 x 8 bit. Data Bus Width = 8bit. Maximum Random Access Time = 40 µs. Mounting Type = Surface Mount. Package Type = TSOP. Pin Count = 48. [See More]

• Supply Voltage: 3.6V; 3.6 V
• Density: 2000000

• Type: FRAM
• Access Time: 40000

3V Non-Volatile Controller SOIC16W - Memory Chips - Non-Volatile State Savers [See More]

• Supply Voltage: 3.6V; 3.6 V
• Pins: 16

• Package Type: SOIC
• Operating Temperature: 85

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

• Supply Voltage: 3.6V; 3.6 V
• Bus Type: Serial-I2C; I2C

• Type: FRAM
• Density: 128

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

• Supply Voltage: 3.6V; 3.6 V
• Bus Type: SPI; Serial-SPI

• Type: FRAM
• Density: 128

The DS1245W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition... [See More]

• Supply Voltage: 3.6V
• Density: 1024

• Bus Type: Parallel
• Package Type: EDIP, PCAP

The DS1345W 3.3V 1024k NV SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the... [See More]

• Supply Voltage: 3.6V
• Density: 1024

• Bus Type: Parallel
• Package Type: PCAP

The DS1270W 16Mb nonvolatile (NV) SRAMs are 16,777,216-bit, fully static, NV SRAMs organized as 2,097,152 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the... [See More]

• Supply Voltage: 3.6V
• Density: 16000

• Bus Type: Parallel
• Package Type: EDIP

The DS1249W 2048kb nonvolatile (NV) SRAMs are 2,097,152-bit, fully static, NV SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the... [See More]

• Supply Voltage: 3.6V
• Density: 2048

• Bus Type: Parallel
• Package Type: EDIP

The DS1230W 3.3V 256k NV SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the... [See More]

• Supply Voltage: 3.6V
• Density: 256

• Bus Type: Parallel
• Package Type: EDIP, PCAP

The DS1330W 3.3V 256k NV SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium... [See More]

• Supply Voltage: 3.6V
• Density: 256

• Bus Type: Parallel
• Package Type: PCAP

The DS1250W 3.3V 4096k NV SRAM is a 4,194,304-bit, fully static, nonvolatile SRAM organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the... [See More]

• Supply Voltage: 3.6V
• Density: 4096

• Bus Type: Parallel
• Package Type: EDIP, PCAP

The DS1350W 3.3V 4096k Nonvolatile SRAM is a 4,194,304-bit, fully static, nonvolatile SRAM organized as 524,288 words by eight bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition... [See More]

• Supply Voltage: 3.6V
• Density: 4096

• Bus Type: Parallel
• Package Type: PCAP

The DS1265W 8Mb nonvolatile (NV) SRAMs are 8,388,608-bit, fully static, NV SRAMs organized as 1,048,576 words by 8-bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the... [See More]

• Supply Voltage: 3.6V
• Density: 8000

• Bus Type: Parallel
• Package Type: EDIP