3.6 V NVRAM

1242983 [FM24V02A-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Bus Type: Serial-I2C; I2C
  • Type: FRAM
  • Density: 256
1242985 [FM25V01A-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Bus Type: SPI; Serial-SPI
  • Type: FRAM
  • Density: 128
1242986 [FM25V02A-DG from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Bus Type: SPI; Serial-SPI
  • Type: FRAM
  • Density: 256
1242988 [FM25V10-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Bus Type: SPI; Serial-SPI
  • Type: FRAM
  • Density: 1000
1242989 [FM25V20A-DG from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Bus Type: SPI; Serial-SPI
  • Type: FRAM
  • Density: 2000
1242990 [FM25V20A-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Bus Type: SPI; Serial-SPI
  • Type: FRAM
  • Density: 2000
1242991 [FM25VN10-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Bus Type: SPI; Serial-SPI
  • Type: FRAM
  • Density: 1000
1254214 [FM24CL64B-GA from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Bus Type: Serial-2 Wire, Serial-I2C; Serial-2 Wire; I2C
  • Type: FRAM
  • Density: 64
1254215 [FM24V10-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Bus Type: Serial-2 Wire, Serial-I2C; Serial-2 Wire; I2C
  • Type: FRAM
  • Density: 1000
1254216 [FM24VN10-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Bus Type: Serial-2 Wire, Serial-I2C; Serial-2 Wire; I2C
  • Type: FRAM
  • Density: 1000
1254223 [FM25CL64B-GA from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Bus Type: SPI; Serial-SPI
  • Type: FRAM
  • Density: 64
1254224 [FM25L04B-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Bus Type: SPI; Serial-SPI
  • Type: FRAM
  • Density: 4
1254225 [FM25L04B-GA from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Bus Type: SPI; Serial-SPI
  • Type: FRAM
  • Density: 4
1254226 [FM25L16B-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Bus Type: SPI; Serial-SPI
  • Type: FRAM
  • Density: 16
1254227 [FM25V05-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Bus Type: SPI; Serial-SPI
  • Type: FRAM
  • Density: 512
1254229 [FM28V020-SG from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Bus Type: Parallel; Parallel
  • Type: FRAM
  • Density: 256
1254235 [FM31L278-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Integrated devices that includes the most commonly needed functions for processor-based systems. Serial Nonvolatile FRAM Memory. Real-time Clock (RTC). Low Voltage Reset. Watchdog Timer. Early Power-Fail Warning/NMI. Two 16-bit Event Counters. Serial Number with Write-lock for Security. [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Bus Type: Serial-2 Wire, Serial-I2C; Serial-2 Wire; I2C
  • Type: FRAM
  • Density: 256
1254236 [FM33256B-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Integrated devices that includes the most commonly needed functions for processor-based systems. Serial Nonvolatile FRAM Memory. Real-time Clock (RTC). Low Voltage Reset. Watchdog Timer. Early Power-Fail Warning/NMI. Two 16-bit Event Counters. Serial Number with Write-lock for Security. [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Bus Type: SPI; Serial-SPI
  • Type: FRAM
  • Density: 256
7165763 [FM31L278-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Integrated devices that includes the most commonly needed functions for processor-based systems. Serial Nonvolatile FRAM Memory. Real-time Clock (RTC). Low Voltage Reset. Watchdog Timer. Early Power-Fail Warning/NMI. Two 16-bit Event Counters. Serial Number with Write-lock for Security. [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Bus Type: Serial-I2C; I2C
  • Type: FRAM
  • Density: 256
7965327 [TC58BVG0S3HBAI4 from Toshiba Imaging Systems Division]
from RS Components, Ltd.

BENAND â „ ¢ is SLC (Single Level Cell) NAND Flash Memory with build in ECC (Error Correction Code). Memory Size = 1Gbit. Organisation = 2048 x 8 bit. Data Bus Width = 8bit. Maximum Random Access Time = 120 µs. Mounting Type = Surface Mount. Package Type = TFBGA. Pin Count =... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Density: 1000000
  • Type: FRAM
  • Access Time: 120000
7965336 [TC58BVG1S3HTAI0 from Toshiba Imaging Systems Division]
from RS Components, Ltd.

BENAND â „ ¢ is SLC (Single Level Cell) NAND Flash Memory with build in ECC (Error Correction Code). Memory Size = 2Gbit. Organisation = 2048 x 8 bit. Data Bus Width = 8bit. Maximum Random Access Time = 40 µs. Mounting Type = Surface Mount. Package Type = TSOP. Pin Count = 48. [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Density: 2000000
  • Type: FRAM
  • Access Time: 40000
7984835 [DS1314S+ from Maxim Integrated]
from RS Components, Ltd.

3V Non-Volatile Controller SOIC16W - Memory Chips - Non-Volatile State Savers [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Pins: 16
  • Package Type: SOIC
  • Operating Temperature: 85
8282780 [FM24V01-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Bus Type: Serial-I2C; I2C
  • Type: FRAM
  • Density: 128
8282815 [FM25V01-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Bus Type: SPI; Serial-SPI
  • Type: FRAM
  • Density: 128
3.3V 1024k Nonvolatile SRAM -- DS1245W
from Maxim Integrated

The DS1245W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition... [See More]

  • Supply Voltage: 3.6V
  • Density: 1024
  • Bus Type: Parallel
  • Package Type: EDIP, PCAP
3.3V 1024k Nonvolatile SRAM with Battery Monitor -- DS1345W
from Maxim Integrated

The DS1345W 3.3V 1024k NV SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the... [See More]

  • Supply Voltage: 3.6V
  • Density: 1024
  • Bus Type: Parallel
  • Package Type: PCAP
3.3V 16Mb Nonvolatile SRAM -- DS1270W
from Maxim Integrated

The DS1270W 16Mb nonvolatile (NV) SRAMs are 16,777,216-bit, fully static, NV SRAMs organized as 2,097,152 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the... [See More]

  • Supply Voltage: 3.6V
  • Density: 16000
  • Bus Type: Parallel
  • Package Type: EDIP
3.3V 2048kb Nonvolatile SRAM -- DS1249W
from Maxim Integrated

The DS1249W 2048kb nonvolatile (NV) SRAMs are 2,097,152-bit, fully static, NV SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the... [See More]

  • Supply Voltage: 3.6V
  • Density: 2048
  • Bus Type: Parallel
  • Package Type: EDIP
3.3V 256k Nonvolatile SRAM -- DS1230W
from Maxim Integrated

The DS1230W 3.3V 256k NV SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the... [See More]

  • Supply Voltage: 3.6V
  • Density: 256
  • Bus Type: Parallel
  • Package Type: EDIP, PCAP
3.3V 256k Nonvolatile SRAM with Battery Monitor -- DS1330W
from Maxim Integrated

The DS1330W 3.3V 256k NV SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium... [See More]

  • Supply Voltage: 3.6V
  • Density: 256
  • Bus Type: Parallel
  • Package Type: PCAP
3.3V 4096k Nonvolatile SRAM -- DS1250W
from Maxim Integrated

The DS1250W 3.3V 4096k NV SRAM is a 4,194,304-bit, fully static, nonvolatile SRAM organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the... [See More]

  • Supply Voltage: 3.6V
  • Density: 4096
  • Bus Type: Parallel
  • Package Type: EDIP, PCAP
3.3V 4096K Nonvolatile SRAM with Battery Monitor -- DS1350W
from Maxim Integrated

The DS1350W 3.3V 4096k Nonvolatile SRAM is a 4,194,304-bit, fully static, nonvolatile SRAM organized as 524,288 words by eight bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition... [See More]

  • Supply Voltage: 3.6V
  • Density: 4096
  • Bus Type: Parallel
  • Package Type: PCAP
3.3V 8Mb Nonvolatile SRAM -- DS1265W
from Maxim Integrated

The DS1265W 8Mb nonvolatile (NV) SRAMs are 8,388,608-bit, fully static, NV SRAMs organized as 1,048,576 words by 8-bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the... [See More]

  • Supply Voltage: 3.6V
  • Density: 8000
  • Bus Type: Parallel
  • Package Type: EDIP