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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, PNP, -100V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; DC Collector Current:8A; Power Dissipation Pd:1.75W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Transition Frequency ft:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, PNP, -100V; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:6A; Power Dissipation:65W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, NPN, 100V; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:10A; Power Dissipation:80W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:3MHz RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, NPN, 100V; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:1.5A; Power Dissipation:1W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:200MHz RoHS Compliant: Yes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: package options, lifecycle status, and procurement availability. Key searchable attributes include 100V. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, Bipolar Transistor, Current Regulation - Diodes, Transistors. This listing
- TJ: -30 to 150 C
- Features: Bipolar RF Transistors, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -100V, -8A, 100V. Search-friendly keywords include transistor, BJT, switching, amplification, -100V,
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports
- PD: 148,000 milliwatts
- TJ: -55 to 175 C
- Features: MOSFET, Other
- Polarity: N-Channel
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, PLASTIC PACKAGE-4 Product overview: CZT953 from Central Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general
- Features: Bipolar RF Transistors
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, PNP 100V 6A
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN 25V 2A
- Features: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 062221-PVR100AD-B5V0 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: NPN + Zener Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 6-TSOP Maximum Current
- IC(max): 100 milliamps
- VCEO: 45 volts
- Power Gain: 160 dB
- PD: 300 milliwatts
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, PNP TRAN 100V 25A
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 100V 3A, DPAK
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 005983-2SD2537T100V Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package:
- Polarity: NPN
- Features: Other
- Package Type: SOT3, SOT89
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 100V 1A, TO-220
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Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 062220-PVR100AD-B3V3 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: NPN + Zener Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 6-TSOP Maximum Current
- Polarity: NPN
- Features: Other
- Package Type: SOT3
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Supplier: ODG (Origin Data Global)
Description: TRANS NPN 25V 2A MPT3
- IC(max): 2,000 milliamps
- VCEO: 25 volts
- Operating Frequency: 110 MHz
- Output Power: 2 watts
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Supplier: ODG (Origin Data Global)
Description: DO-27 MOSFETs ROHS
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Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 1240891-PVR100AZ-B3V0 Manufacturer Homepage: www.nxp.com Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance
- Package Type: SOT3
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Supplier: Utmel Electronic Limited
Description: Darlington Transistors 2A 100V Bipolar Power NPN
- IC(max): 2,000 milliamps
- VCEO: 100 volts
- PD: 2,000 milliwatts
- TJ: -65 to 150 C
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Supplier: Utmel Electronic Limited
Description: NPN 100MA 50V DIGITAL TRANSISTOR
- Polarity: NPN
- Features: Other
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYCLH Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB)
- hfe: 120 to 260
- VCEO: 100 volts
- IC(max): 2,000 milliamps
- PD: 1,250 milliwatts
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements
- hfe: 150
- VCEO: 100 volts
- IC(max): 2,000 milliamps
- PD: 1,250 milliwatts
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Supplier: ROHM Semiconductor USA, LLC
Description: DTA113ZCA is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
- Package Type: SOT23
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Supplier: ROHM Semiconductor USA, LLC
Description: DTC115ECA is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Nexperia B.V.
Description: 45 V, 100 mA PNP general purpose transistor
- hfe: 220 to 475
- VCEO: 45 volts
- IC(max): 100 milliamps
- PD: 200 milliwatts
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Supplier: ROHM Semiconductor USA, LLC
Description: DTC114ECA is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Description: OPTOISO 2.5KV TRANSISTOR 4BGA
- Operating Temperature: -40 to 125 C
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Features: IGBT
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Supplier: ROHM Semiconductor GmbH
Description: BSS64A is a SOT-23 package Transistor for high voltage amplifier.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: ROHM Semiconductor GmbH
Description: BSS63A is a SOT-23 package Transistor for high voltage amplifier.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
- Package Type: SOT23
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 50V 2W 180@50mA,2V 2A NPN SOT-89-3 Bipolar Transistors - BJT ROHS
- IC(max): 2,000 milliamps
- VCEO: 50 volts
- fT: 360 MHz
- PD: 2,000 milliwatts
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN 700V 10A 23MHz 100W Through Hole TO-220
- Polarity: NPN
- Features: Other
- Package Type: TO-220
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Description: IGBT MODULE 1200V 100A
- Features: IGBT, Other
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Supplier: Integra Technologies, Inc.
Description: IGN0110UM100 is a dual gallium nitride (GaN) high electron mobility transistor (HEMT). This device is designed for Broadband applications operating over the 100 – 1GHz instantaneous frequency band. Under CW conditions it supplies a minimum of 100 watts of output power with 12dB gain.
- Power Gain: 12.5 dB
- Output Power: 100 watts
- Operating Frequency: 100 to 1,000 MHz
- Features: MOSFET RF Transistors, Other, Power BJT Transistors
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