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Supplier: Infineon Technologies AG
Description: . Benefits RoHS Compliant Low RDS(on) Low Profile (less than 1.1 mm) Dual P-Channel MOSFET Designers who used this product also designed with BSC123N08NS3 G | N-Channel Power MOSFET BSC016
- Package Type: SO-8, Other
- Packing Method: Tape Reel, Other
- Polarity: P-Channel, Other
- TJ: 150 C
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Supplier: Infineon Technologies AG
Description: -12V Dual P-Channel HEXFET Power MOSFET in a SO-8 package Benefits RoHS Compliant Low RDS(on) Dual P-Channel MOSFET Applications Fuel-cell control unit (FCCU) Designers who used this product also designed with
- Package Type: SO-8, Other
- Packing Method: Tape Reel, Other
- Polarity: P-Channel, Other
- QG: 38 nC
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Supplier: Infineon Technologies AG
Description: -100V Single P-Channel IR MOSFET in a D2-Pak package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for
- Package Type: TO-263, Other
- Packing Method: Tape Reel, Other
- Polarity: P-Channel, Other
- TJ: 150 C
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Supplier: Infineon Technologies AG
Description: -30V Single P-Channel Power MOSFET in a Micro 3 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS,
- Package Type: SOT23, Other
- Packing Method: Tape Reel, Other
- Polarity: P-Channel, Other
- TJ: 150 C
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Supplier: Utmel Electronic Limited
Description: MOSFET -12V P-Channel PowerTrench MOSFET
- Polarity: P-Channel
- Transistor Type: MOSFET
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Supplier: Nexperia B.V.
Description: P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj = 175 °C Small
- IDSS: -3200 milliamps
- MOSFET Operating Mode: Enhancement
- PD: 1950 milliwatts
- Package Type: Other
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Supplier: Texas Instruments
Description: CSD23203W 8 V P-Channel NexFET? Power MOSFET 6-DSBGA
- IDSS: -54000 milliamps
- Package Type: Other
- Polarity: P-Channel
- QG: 4.9 nC
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Supplier: Texas Instruments
Description: CSD25304W1015 20-V P-Channel NexFET? Power MOSFET 6-DSBGA
- Package Type: Other
- Polarity: P-Channel
- QG: 3.3 nC
- V(BR)DSS: -20 volts
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Supplier: Texas Instruments
Description: CSD25202W15 20-V P-Channel NexFET? Power MOSFET 9-DSBGA
- IDSS: -4000 milliamps
- Package Type: Other
- Polarity: P-Channel
- QG: 5.8 nC
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Supplier: Texas Instruments
Description: 20-V P-Channel NexFET Power MOSFET, CSD25310Q2 6-WSON -40 to 85
- IDSS: -48000 milliamps
- Package Type: Other
- Polarity: P-Channel
- QG: 3.6 nC
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Supplier: Utmel Electronic Limited
Description: Power MOSFET 25V 2.5A 250 mOhm Dual P-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL
- Polarity: P-Channel
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Supplier: Utmel Electronic Limited
Description: Single P-Channel Logic Level Power MOSFET -30V, -25A, 72mO, DPAK (SINGLE GAUGE) TO-252, 75-TUBE
- Polarity: P-Channel
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Supplier: Utmel Electronic Limited
Description: Single P-Channel Power MOSFET -20V, -1.3A, 220mO, SOT-23 (TO-236) 3 LEAD, 3000-REEL
- Polarity: P-Channel
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Supplier: Microchip Technology, Inc.
Description: breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Additional Features Low threshold (-2.4V max.) High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input
- Package Type: SOT89
- Polarity: P-Channel
- VGS(off): -2.4 volts
- rDS(on): 3.5 ohms
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Supplier: Microchip Technology, Inc.
Description: VP2110 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive
- Package Type: SOT23
- Polarity: P-Channel
- VGS(off): -3.5 volts
- rDS(on): 12 ohms
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Supplier: Littelfuse, Inc.
Description: P-Channel Standard Power MOSFETs are available in voltage rating from -100V to -600V in industry-popular TO-247 and surface mountable TO-268 packages. They are ideal for Buck Converters and for loads that need to be connected to ground. They can pair-up with
- Package Type: Other
- Polarity: P-Channel
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Supplier: ROHM Semiconductor USA, LLC
Description: RRS100P03FRA is the high reliability automotive MOSFET, suitable for Switching.
- IDSS: -10000 milliamps
- PD: 2000 milliwatts
- Packing Method: Tape Reel
- Polarity: P-Channel
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Supplier: ROHM Semiconductor GmbH
Description: Discrete Semiconductors, MOSFETs, 12 to 150V MOSFETs, Single-Pch MOSFETs
- IDSS: -15000 milliamps
- PD: 50000 milliwatts
- Package Type: Other
- Packing Method: Tape Reel
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Polarity: N-Channel
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Supplier: ROHM Semiconductor USA, LLC
Description: Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
- IDSS: -10000 milliamps
- PD: 2000 milliwatts
- Package Type: Other
- Packing Method: Tape Reel
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Supplier: ROHM Semiconductor GmbH
Description: Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
- IDSS: -10000 milliamps
- PD: 2000 milliwatts
- Package Type: Other
- Packing Method: Tape Reel
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Supplier: ODG (Origin Data Global)
Description: PCH -30V -10A POWER MOSFET. RRS1
- IDSS: 10000 milliamps
- PD: 2000 milliwatts
- Package Type: Other
- Polarity: P-Channel, Other
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Supplier: Richardson RFPD
Description: Dual P-Channel PowerTrench® MOSFET -20V, -3.0A, 120mO
- Package Type: Other
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Rochester Electronics
Description: 30A, 60V, 0.075ohm, P-Channel, Power MOSFET
- Polarity: P-Channel
- rDS(on): 0.0750 ohms
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 100V 15A 67mO@10V,4.4A 40W 4V@250uA P Channel Power-33-8 MOSFETs ROHS
- PD: 40000 milliwatts
- Polarity: P-Channel
- V(BR)DSS: 100 volts
- VGS(off): 4 volts
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Supplier: Win Source Electronics
Description: ) FET Type: P-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2W (Ta) Package / Case: 8-SOIC (0.154", 3.90mm Width
- PD: 2000 milliwatts
- Package Type: SOT3
- Polarity: P-Channel
- QG: 39 nC
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET -35V P-Channel PowerTrench
- Transistor Type: MOSFET
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Supplier: Solid State Devices, Inc.
Description: reputation has been built upon our unsurpassed technology and quality in the areas of high density/high power and high voltage discrete semiconductors and modules.
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: DigiKey
Description: MOSFET, POWER -30V P-CHANNEL, SO
- Package Type: Other
- Polarity: P-Channel
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Supplier: Wolfspeed
Description: Wolfspeed extends its leadership in SiC technology by introducing two new 1700V SiC discrete MOSFETs in optimized packing with wide creepage and clearance distance between drain and source (~8mm) thereby providing extra electrical isolation suitable for high pollution environments. The
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: 1A -80V AND -100V 3.65 OHM P-CHANNEL POWER MOSFETS
- Transistor Type: MOSFET
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Description: MOSFET, POWER -30V P-CHANNEL, SO
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: RS Components, Ltd.
Description: Power MOSFET P-Channel 100V 13A CPT3 - Discrete Semiconductors - MOSFET Transistors Delivery on production packaging - Reel. This product is non-returnable.
- Package Type: Other
- Polarity: P-Channel
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: MACOM Technology Solutions Win Source Part Number: 1325011-UF2820P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF Packaging: Tray Standard Package: 20 Voltage - Rated: 65 V Frequency: 100MHz ~ 500MHz Current - Test
- Operating Frequency: 100 to 500 MHz
- Output Power: 20 watts
- Package Type: SOT3
- Packing Method: Tray, Other
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1351857-TJ90S04M3L,L Q Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: U-MOSVI Package: Tape & Reel Standard Package: 2,000 Technology: MOSFET (Metal Oxide) FET Type: P-Channel
- Output Power: Up to 180 watts
- Package Type: SOT3
- Polarity: P-Channel
- TJ: 175 C
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Nexperia today announced that the ongoing expansion of its NextPower 80 V and 100 V MOSFET portfolio is continuing apace with the release of several new LFPAK devices in industry-standard 5x6 mm and 8x8 mm footprints. These (read more)
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Wolfspeed has added a new family of 2300 V WolfPACKTM baseplate-less silicon carbide power modules which enable utility-scale grid-tied 1500 V inverters ranging from > 250 kW to 10 mW+. Utility-scale, grid-tied Inverters are more efficient and reliable with (read more)
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Richardson RFPD is over-stocked on this Vincotech Silicon Carbide module and willing to negotiate on pricing to support your requirement. These are all original manufacturers’ modules. Contact us for samples to evaluate the quality of these modules and, potentially, overcome the challenges initiating new designs in this supply chain environment.
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IRF9520NS Datasheet
- 100V Single P - Channel HEXFET Power MOSFET in a D2-Pak package .
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Page 2. Semiconductor parts with 913 in root number
-6.5A, - 100V , 0.300 Ohm, P - Channel Power MOSFET .
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9130 datasheet : Datasheets for Electronic Components and Semiconductors
-6.5A, - 100V , 0.300 Ohm, P - Channel Power MOSFET .
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Page 28. Semiconductor parts with 150 in root number
-25A, -80V and - 100V , 0.150 Ohm, P - Channel Power MOSFETs .
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IRF9 datasheet : Datasheets for Electronic Components and Semiconductors
-25A, -80V and - 100V , 0.150 Ohm, P - Channel Power MOSFETs .
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IRFF datasheet : Datasheets for Electronic Components and Semiconductors
-6.5A, - 100V , 0.300 Ohm, P - Channel Power MOSFET .
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Page 9. Semiconductor parts with 151 in root number
-25A, -80V and - 100V , 0.150 Ohm, P - Channel Power MOSFETs .
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Page 2. Semiconductor parts with 684 in root number
POWER MOSFET P - CHANNEL (BVdss=- 100V , Rds(on)=0.60ohm, Id=-4.0A) .
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Page 12. Semiconductor parts with 140 in root number
-19A and -15A, -80V and - 100V , 0.20 and 0.30 Ohm, P - Channel Power MOSFETs .
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IRF9Z34L datasheet - HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.14 Ohm, ID = -18A : Datasheets for Electronic Components and Semiconductors
-10A and -12A, -80V and - 100V , 0.30 and 0.40 Ohm, P - Channel Power MOSFETs .