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Supplier: Littelfuse, Inc.
Description: P-Channel Standard Power MOSFETs are available in voltage rating from -100V to -600V in industry-popular TO-247 and surface mountable TO-268 packages. They are ideal for Buck Converters and for loads that need to be connected to ground. They can pair-up with
- Features: Other
- Polarity: P-Channel
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Supplier: Infineon Technologies AG
Description: N-Channel Power MOSFET IRF4905S | P-Channel Power MOSFET IPB036N12N3 G | N-Channel Power MOSFET BSC117N08NS5 | N-Channel Power MOSFET IRF7842 | N-Channel Power MOSFET IAUT300N10S5N015 |
- rDS(on): 0.199 ohms
- QG: 38 nC
- TJ: 150 C
- VGS(off): 8 volts
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Supplier: Infineon Technologies AG
Description: Storage Systems Telecommunication infrastructure Uninterruptible power supplies (UPS) Designers who used this product also designed with IKW75N60T | IGBT discretes IRF630N | N-Channel Power MOSFET IDP15E65D2 | Silicon Diodes IKW75N65ET7 | IGBT discretes IKW75N60T | IGBT
- rDS(on): 0.0017 ohms
- TJ: 175 C
- VGS(off): 20 volts
- Features: MOSFET, Other, Power MOSFET
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Supplier: Utmel Electronic Limited
Description: MOSFET -12V P-Channel PowerTrench MOSFET
- V(BR)DSS: 12 volts
- rDS(on): 0.022 ohms
- PD: 700 milliwatts
- TJ: -55 to 150 C
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Supplier: Newark, An Avnet Company
Description: P CHANNEL POWER MOSFET, STripFET, 30V, 7A, SO-8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:2.5W RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: P CHANNEL POWER MOSFET, STripFET, -30V, -5A, SO-8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:2.5W RoHS Compliant: Yes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET
- gfs: 0.011 kS
- PD: 45 milliwatts
- MOSFET Operating Mode: Enhancement
- Features: MOSFET, Other
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Power MOSFET - P Channel Power Mosfet, Hexfet, -20V, -4.3A, Sot-23; Channel Type Infineon -- 40T7448Supplier: Newark, An Avnet Company
Description: P CHANNEL POWER MOSFET, HEXFET, -20V, -4.3A, SOT-23; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:1.3W RoHS Compliant:
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Supplier: Newark, An Avnet Company
Description: P CHANNEL MOSFET, -100V, 13A, D-PAK; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:13A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
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Supplier: Nexperia B.V.
Description: P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj = 175 °C Small and leadless ultra
- V(BR)DSS: -20 volts
- IDSS: -3,200 milliamps
- VGS(off): -1 volts
- rDS(on): 0.122 ohms
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Supplier: Texas Instruments
Description: CSD23203W 8 V P-Channel NexFET? Power MOSFET 6-DSBGA
- V(BR)DSS: -8 volts
- rDS(on): 0.0194 ohms
- IDSS: -54,000 milliamps
- QG: 4.8999999999999995 nC
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Supplier: ROHM Semiconductor GmbH
Description: RD3P100SN is a Power MOSFET with Low on-resistance, suitable for Switching.
- V(BR)DSS: 100 volts
- IDSS: 10,000 milliamps
- QG: 17.999999999999996 nC
- PD: 20,000 milliwatts
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Supplier: ROHM Semiconductor GmbH
Description: Discrete Semiconductors, MOSFETs, 12 to 150V MOSFETs, Single-Pch MOSFETs
- V(BR)DSS: -100 volts
- IDSS: -15,000 milliamps
- QG: 64 nC
- PD: 50,000 milliwatts
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Supplier: ROHM Semiconductor USA, LLC
Description: RRS100P03FRA is the high reliability automotive MOSFET, suitable for Switching.
- V(BR)DSS: -30 volts
- IDSS: -10,000 milliamps
- QG: 38.99999999999999 nC
- PD: 2,000 milliwatts
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Supplier: ROHM Semiconductor GmbH
Description: RS6P100BH is a power MOSFET with low on - resistance, suitable for switching.
- V(BR)DSS: 100 volts
- IDSS: 100,000 milliamps
- QG: 29 nC
- PD: 104,000 milliwatts
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Supplier: Microchip Technology, Inc.
Description: This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive
- VGS(off): -2.4 volts
- rDS(on): 3.5 ohms
- Features: MOSFET
- Polarity: P-Channel
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Supplier: ROHM Semiconductor GmbH
Description: MOSFET, one of Field Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market.
- V(BR)DSS: -100 volts
- IDSS: -25,000 milliamps
- QG: 59.99999999999999 nC
- PD: 50,000 milliwatts
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Supplier: Utmel Electronic Limited
Description: Single P-Channel Power MOSFET -20V, -15A, 6.7mO
- V(BR)DSS: -20 volts
- QG: 55.99999999999999 nC
- PD: 2,200 milliwatts
- TJ: -55 to 150 C
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Supplier: Utmel Electronic Limited
Description: P-Channel Power MOSFET, -50V, -0.14A, 23 Ohm, Dual MCPH6
- V(BR)DSS: -50 volts
- QG: 1.4 nC
- PD: 800 milliwatts
- TJ: 150 C
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Supplier: Texas Instruments
Description: CSD25304W1015 20-V P-Channel NexFET? Power MOSFET 6-DSBGA
- V(BR)DSS: -20 volts
- rDS(on): 0.0325 ohms
- QG: 3.3 nC
- Features: Other, Power MOSFET
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Supplier: ROHM Semiconductor USA, LLC
Description: RSD131P10FRA is a Power MOSFET with Low on-resistance and Fast switching speed, suitable for switching. It is a highly reliable product for automotive.
- V(BR)DSS: -100 volts
- IDSS: -13,000 milliamps
- QG: 40 nC
- PD: 20,000 milliwatts
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Supplier: Texas Instruments
Description: CSD23202W10 12 V P-Channel NexFET(TM) Power MOSFET 4-DSBGA
- V(BR)DSS: -12 volts
- rDS(on): 0.053 ohms
- IDSS: -25,000 milliamps
- QG: 2.9 nC
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Supplier: Utmel Electronic Limited
Description: 12A, 60V, 0.18ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3
- Features: MOSFET
- Polarity: P-Channel
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Supplier: Nexperia B.V.
Description: P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching Enhanced power
- V(BR)DSS: -30 volts
- IDSS: -4,400 milliamps
- VGS(off): -2 volts
- rDS(on): 0.08 ohms
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Polarity: N-Channel
- Features: Power MOSFET
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Supplier: ROHM Semiconductor USA, LLC
Description: RRS140P03FRAis the high reliability Automotive MOSFET, suitable for switching application.
- V(BR)DSS: -30 volts
- IDSS: -14,000 milliamps
- QG: 80 nC
- PD: 2,000 milliwatts
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Supplier: Allied Electronics, Inc.
Description: N-Channel Enhancement Mode Power MOSFET, Continuous Drain Current 14 A @ +25 °C High voltage: 450 V for off-line SMPS High current: 12 A for up to 350 W SMPS Ultra fast switching for operation at less than 100 kHz The NTE2394 is an N-channel enhancement mode power
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Supplier: ROHM Semiconductor USA, LLC
Description: QS8M51FRA is the high reliability Automotive MOSFET, suitable for the switching application.
- V(BR)DSS: 100 volts
- IDSS: 2,000 milliamps
- QG: 4.699999999999999 nC
- PD: 1,500 milliwatts
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Supplier: Microchip Technology, Inc.
Description: This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive
- VGS(off): -2.4 volts
- rDS(on): 2 ohms
- Features: MOSFET
- Polarity: P-Channel
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Supplier: Microchip Technology, Inc.
Description: This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive
- VGS(off): -2 volts
- rDS(on): 15 ohms
- Features: MOSFET
- Polarity: P-Channel
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Supplier: Allied Electronics, Inc.
Description: -20V DUAL P-CHANNEL HEXFET POWER MOSFETIN A MICRO 8 PACKAGE
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Supplier: Allied Electronics, Inc.
Description: -20V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE
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Supplier: Wolfspeed
Description: Wolfspeed extends its leadership in SiC technology by introducing two new 1700V SiC discrete MOSFETs in optimized packing with wide creepage and clearance distance between drain and source (~8mm) thereby providing extra electrical isolation suitable for high pollution environments. The
- Features: MOSFET, Other
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Supplier: Allied Electronics, Inc.
Description: MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.2Ohm;ID -14A;TO-220AB;PD 79W;VGS +/-20V
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Supplier: ODG (Origin Data Global)
Description: PCH -30V -10A POWER MOSFET. RRS1
- V(BR)DSS: 30 volts
- IDSS: 10,000 milliamps
- PD: 2,000 milliwatts
- TJ: 150 C
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Richardson RFPD is over-stocked on this Vincotech Silicon Carbide module and willing to negotiate on pricing to support your requirement. These are all original manufacturers’ modules. Contact us for samples to evaluate the quality of these modules and, potentially, overcome the challenges initiating new designs in this supply chain environment.
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IRF9520NS Datasheet
- 100V Single P - Channel HEXFET Power MOSFET in a D2-Pak package .
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Page 2. Semiconductor parts with 913 in root number
-6.5A, - 100V , 0.300 Ohm, P - Channel Power MOSFET .
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9130 datasheet : Datasheets for Electronic Components and Semiconductors
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Page 28. Semiconductor parts with 150 in root number
-25A, -80V and - 100V , 0.150 Ohm, P - Channel Power MOSFETs .
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IRF9 datasheet : Datasheets for Electronic Components and Semiconductors
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IRFF datasheet : Datasheets for Electronic Components and Semiconductors
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Page 9. Semiconductor parts with 151 in root number
-25A, -80V and - 100V , 0.150 Ohm, P - Channel Power MOSFETs .
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Page 2. Semiconductor parts with 684 in root number
POWER MOSFET P - CHANNEL (BVdss=- 100V , Rds(on)=0.60ohm, Id=-4.0A) .
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Page 12. Semiconductor parts with 140 in root number
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IRF9Z34L datasheet - HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.14 Ohm, ID = -18A : Datasheets for Electronic Components and Semiconductors
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