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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Transistor General Purpose
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Category: Transistors Series: BFR181 Transistor Type: Bipolar Technology: Si Transistor Polarity: NPN Package / Case: SOT-323 Packaging: Reel Mounting Style: SMD/SMT Emitter Base Voltage (VEBO): 2 V
- Package Type: SOT3
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN 25V 2A
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN 25V 1.2A
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN 8.0A 100Vcev 100Vceo 2.0V 100W
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 062221-PVR100AD-B5V0 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: NPN + Zener Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case
- Package Type: SOT3, Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C
- Package Type: Other
- Polarity: NPN
- Transistor Type: Power BJT Transistors
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Supplier: Integra Technologies, Inc.
Description: IGN0110UM100 is a dual gallium nitride (GaN) high electron mobility transistor (HEMT). This device is designed for Broadband applications operating over the 100 – 1GHz instantaneous frequency band. Under CW conditions it supplies a minimum of 100 watts of output power
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: Utmel Electronic Limited
Description: Darlington Transistors 2A 100V Bipolar Power NPN
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors, Darlington
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Supplier: Microchip Technology, Inc.
Description: Power MOS V® can still provide the best trade-off between performance and cost in some applications. Power MOS V® utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with conventional polysilicon gate structures. The
- Transistor Type: MOSFET
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Supplier: Rochester Electronics
Description: Small Signal Bipolar Transistor
- Package Type: TO-92, Other
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 32V 2W 120@500mA,3V 2A PNP TO-243AA Bipolar Transistors - BJT ROHS
- Polarity: PNP
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: TRANS NPN 25V 2A MPT3
- Package Type: Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Package Type: Other
- Transistor Type: Power BJT Transistors
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed radar transistor device part number IB0810M100 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 . While operating in class C mode at Vcc=36V, this common base device supplies a minimum of 100 watts of peak
- Operating Frequency: 870 to 990 MHz
- Output Power: 100 watts
- Package Type: Other
- Power Gain: 10.3 dB
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Description: TRANSISTOR
- Transistor Type: General Purpose BJT
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Supplier: ROHM Semiconductor USA, LLC
Description: Transistor
- Package Type: TO-251 / TO-252, Other
- Polarity: N-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: Radwell International
Description: TRANSISTOR 100V 600WATT. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
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Supplier: Infineon Technologies AG
Description: PNP Silicon Switching Transistors Summary of Features High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with good matching in one package
- Package Type: SOT23, Other
- Polarity: PNP, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN 700V 10A 23MHz 100W Through Hole TO-220
- Package Type: TO-220, Other
- Polarity: NPN
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Supplier: ODG (Origin Data Global)
Description: RF TRANS NPN 31V 400MHZ 55JU
- Operating Frequency: 225 to 400 MHz
- Output Power: 270 watts
- Package Type: Other
- Polarity: NPN, Other
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Supplier: Acme Chip Technology Co., Limited
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
- Transistor Type: General Purpose BJT
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Supplier: ROHM Semiconductor GmbH
Description: BSS63A is a SOT-23 package Transistor for high voltage amplifier.
- Package Type: SOT23, Other
- Polarity: PNP
- Transistor Grade / Operating Range: Commercial
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Supplier: Win Source Electronics
Description: Manufacturer: Micro Commercial Co Win Source Part Number: 796785-TIP100-BP Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Power - Max: 80W Transistor Type: NPN - Darlington Family Name: TIP
- IC(max): 0.0500 milliamps
- Package Type: TO-220, SOT3
- Packing Method: Shipping Tube / Stick Magazine, Other
- Polarity: NPN
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Supplier: Win Source Electronics
Description: Manufacturer: Ampleon USA Inc. Win Source Part Number: 770207-BLF8G27LS-100 V,118 Packaging: Reel package Package: SOT-1244B Frequency: 2.5GHz ~ 2.7GHz Current - Test: 900mA Gain: 17dB Transistor Type: LDMOS Voltage - Test: 28V Power - Output: 25W
- Operating Frequency: 2500 to 2700 MHz
- Output Power: 25 watts
- Package Type: SOT3
- Packing Method: Tape Reel, Other
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Supplier: Littelfuse, Inc.
Description: As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power
- Package Type: TO-220, Other
- Polarity: N-Channel
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Supplier: Rochester Electronics
Description: Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
- Package Type: SOT23, Other
- Packing Method: Tape Reel, Other
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Supplier: Nexperia B.V.
Description: PNP general-purpose transistors in a small SOT23 (TO-236AB), Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 65 V) Applications General-purpose switching and amplification
- IC(max): -100 milliamps
- Operating Frequency: 100 MHz
- PD: 250 milliwatts
- Package Type: Other
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Supplier: Utmel Electronic Limited
Description: 8.0 A, 100 V NPN Darlington Bipolar Power Transistor
- IC(max): 8000 milliamps
- Number of Transistors in the Chip: 1
- PD: 2000 milliwatts
- Packing Method: Shipping Tube / Stick Magazine, Other
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Supplier: Utmel Electronic Limited
Description: RF Bipolar Transistors VCEO=-150V IC=-600mA
- Number of Transistors in the Chip: 1
- Output Power: 0.3000 watts
- Packing Method: Tape Reel, Other
- Polarity: PNP, Other
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Small-Signal Bipolar Transistors (BJT) - 65 V, 100 mA PNP general-purpose transistors -- BC857BW/ZLXSupplier: Nexperia B.V.
Description: PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 65 V) Applications General-purpose switching and amplification
- IC(max): -100 milliamps
- PD: 200 milliwatts
- Package Type: Other
- Polarity: NPN, PNP
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Supplier: Broadcom Inc.
Description: Microcurrent device offering good RF performance at 1mA-20mA. The AT-320XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1dB, Gain=14dB at 3V, 2mA; P1dB= 13dBm at 3V, 20mA (all at 900 MHz)
- Package Type: Other
- Polarity: NPN, Other
- Transistor Grade / Operating Range: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT VCEO=40V IC=100mA
- IC(max): 200 milliamps
- Number of Transistors in the Chip: 1
- PD: 200 milliwatts
- Packing Method: Tape Reel, Other
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Supplier: ODG (Origin Data Global)
Description: TRANS NPN 45V 0.5A SUPERSOT-6
- IC(max): 500 milliamps
- Operating Frequency: 300 MHz
- Output Power: 0.7000 watts
- Package Type: SOT23, Other
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The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
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