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Supplier: ERSAELECTRONICS PTE. LTD.
Description: and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.15A. Search-friendly keywords include transistor, BJT, switching, amplification, 0.15A, Bipolar Transistor,
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 450V, 15A. Search-friendly keywords include transistor, BJT, switching, amplification, 450V, 15A, Bipolar Transistor, Single Bipolar Transistors.
- IC(max): 15,000 milliamps
- VCEO: 450 volts
- VCBO: 1,000 volts
- PD: 125,000 milliwatts
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 15A. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 15A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer
- PD: 2,000 milliwatts
- TJ: -65 to 150 C
- Features: Bipolar RF Transistors, Other
- Polarity: NPN
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 400V, 15A. Search-friendly keywords include transistor, BJT, switching, amplification, 400V, 15A, Bipolar Transistor, Single Bipolar
- IC(max): 15,000 milliamps
- VCEO: 400 volts
- PD: 180,000 milliwatts
- TJ: -65 C
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, AEC-Q101, NPN, 50V, 0.15A; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:180MHz; Power Dissipation Pd:200mW; DC Collector Current:150mA; DC Current Gain hFE:180hFE; Transistor RoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 1185566-IMH15A Manufacturer Homepage: www.rohm.com RoHS State: Request Verification Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance
- Package Type: SOT3
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, NPN, 160V, 1.5A, 15W, TO-251; Transistor Polarity:NPN; Collector Emitter Voltage Max:160V; Continuous Collector Current:1.5A; Power Dissipation:15W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes
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Supplier: ODG (Origin Data Global)
Description: 25V 1W 160@100mA,1V 1.5A NPN TO-92-3 Bipolar (BJT) ROHS
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR PNP -100V 15A, TO-247
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Supplier: Win Source Electronics
Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038154-FDH055N15A Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 429W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status:
- V(BR)DSS: 150 volts
- PD: 429,000 milliwatts
- TJ: -55 to 175 C
- Features: MOSFET, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001080-FDB075N15A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 333W (Tc) Family Name: FDB075N15A Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min
- V(BR)DSS: 150 volts
- PD: 333,000 milliwatts
- TJ: -55 to 175 C
- Features: MOSFET, Other
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, NPN, 400V, 15A, TO-3-2; Transistor Polarity:NPN; Collector Emitter Voltage Max:400V; Continuous Collector Current:15A; Power Dissipation:175W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Product Range:- RoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220F-3 Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 15A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 18.6nC @ 10V Max Input Capacitance:
- V(BR)DSS: 150 volts
- PD: 22,000 milliwatts
- TJ: -55 to 175 C
- Features: MOSFET, Other
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 850V 15A, TO-3 PKG
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT PNP 15V VCEO 2A
- IC(max): 3,000 milliamps
- PD: 1,000 milliwatts
- TJ: -55 to 200 C
- Number of Transistors in the Chip: 1
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Supplier: Utmel Electronic Limited
Description: Bipolar Power Transistor, NPN, 15 A, 230 V, 200 Watt
- IC(max): 15,000 milliamps
- VCEO: 230 volts
- PD: 200,000 milliwatts
- TJ: -65 to 150 C
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT NPN 230V 15A
- VCEO: 230 volts
- IC(max): 15,000 milliamps
- PD: 130,000 milliwatts
- TJ: 150 C
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT BIP NPN 1A 15V
- Features: Bipolar RF Transistors
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60415PY Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements
- hfe: 250
- VCEO: 40 volts
- IC(max): 15,000 milliamps
- PD: 1,500 milliwatts
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Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60415NY Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements
- hfe: 200
- VCEO: -40 volts
- IC(max): -15,000 milliamps
- PD: 1,500 milliwatts
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Supplier: VAST STOCK CO., LIMITED
Description: IGBT Transistors LOW LOSS DuoPack 1200V 15A
- Features: IGBT
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Features: Other
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 250V 200W 50@3A,5V 15A PNP TO-3PN Bipolar Transistors - BJT ROHS
- IC(max): 15,000 milliamps
- VCEO: 250 volts
- PD: 200,000 milliwatts
- hfe: 50
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Description: IGBT MODULE 1200V 15A 113W
- Output Power: 113 watts
- Packing Method: Bulk Pack
- Features: IGBT, Other
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Supplier: Infineon Technologies AG
Description: PNP Silicon Switching Transistor Summary of Features Low collector-emitter saturation voltage Complementary type: SMBT2222A / MMBT2222A (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101
- IC(max): 150 to 600 milliamps
- VCEO: 60 volts
- VCBO: 60 volts
- fT: 200 MHz
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Supplier: Integra Technologies, Inc.
Description: Part number ILT2731M15 is a high power transistor which is internally matched to 50 ohms. It is designed for S-Band radar systems and operates over the instantaneous bandwidth of 2.7-3.1 GHz. It utilizes gold metal LDMOS transistor technology operating in common source configuration.
- Power Gain: 12.1 dB
- Operating Frequency: 2,700 to 3,100 MHz
- Output Power: 15 watts
- Features: Bipolar RF Transistors, Other
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) Potential Applications For AF input stages
- IC(max): 100 milliamps
- VCEO: 45 volts
- VCBO: 50 volts
- fT: 250 MHz
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011) Potential Applications For AF input stages
- IC(max): 100 milliamps
- VCEO: 30 volts
- VCBO: 30 volts
- fT: 250 MHz
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Description: MOSFET N-CH 150V 15A TO220F
- V(BR)DSS: 150 volts
- IDSS: 15,000 milliamps
- Features: MOSFET, Other
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: ROHM Semiconductor USA, LLC
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor PNP 200V 200mA 15MHz 1.3W Surface Mount SOT-89-3
- Features: Other
- Polarity: PNP
- Package Type: SOT89
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Supplier: Acme Chip Technology Co., Limited
Description: MOSFET N-CH 100V 15A DPAK
- V(BR)DSS: 100 volts
- IDSS: 15,000 milliamps
- Features: MOSFET, Other
- Package Type: TO-251 / TO-252
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Supplier: Integra Technologies, Inc.
Description: The high power transistor part number ILD1011M15HV is designed for Avionics systems operating at 1030-1090 . Operating at 507s, 2% pulse conditions this LDMOS FET device supplies a minimum of 15 watts of power at 1030/1090 . All devices are 100% screened for large signal RF parameters.
- Power Gain: 17 dB
- Operating Frequency: 1,030 to 1,090 MHz
- Output Power: 15 watts
- Features: Bipolar RF Transistors, Other
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed avionics transistor part number IB1011L15 is designed for L-Band avionics systems operating at 1030 and 1090 . While operating in class C mode under Mode S – ELM pulse burst conditions at VCC = 48V, this common base device supplies a minimum of 15 watts of peak pulse
- Power Gain: 14.5 dB
- Operating Frequency: 1,030 MHz
- Output Power: 15 watts
- Features: Bipolar RF Transistors, Other
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Supplier: RS Components, Ltd.
Description: PNP power transistor,MJ15004,20A BP
- TJ: 200 C
- Number of Transistors in the Chip: 1
- Features: General Purpose BJT, Other
- Polarity: PNP
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