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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT MATCHED MONO DUAL NPN
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: TRANS 2NPN 45V 0.025A TO78-6
- Package Type: Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Rochester Electronics
Description: MATCHED Monolithic Dual TRANSISTOR
- Package Type: Other
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Supplier: Utmel Electronic Limited
Description: Transistors RF MOSFET Power 60W 1GHZ FET TO-270
- Polarity: N-Channel, Other
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor Array 2 NPN (Dual) Matched Pair 45V 25mA 450MHz 500mW Through Hole TO-78-6
- Package Type: Other
- Polarity: NPN
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Supplier: Utmel Electronic Limited
Description: RF MOSFET Transistors HV8 2GHZ 140W NI780S
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Utmel Electronic Limited
Description: Transistors RF MOSFET AF1 2GHz 60W OM780-4
- Polarity: N-Channel, Other
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Utmel Electronic Limited
Description: AVAGO TECHNOLOGIES AT-41511-TR1G Bipolar - RF Transistor, NPN, 12 V, 10 GHz, 225 mW, 50 mA, 150
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Analog Devices Inc. Win Source Part Number: 129110-MAT01GHZ Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 450MHz Transistor Polarity: 2 NPN (Dual) Matched Pair Categories: Discrete Semiconductor Products Status: Active
- Package Type: SOT3, Other
- Polarity: NPN, Other
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Supplier: Radwell International
Description: OMRON Semiconductors EE-SX4009-P1
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Supplier: Radwell International
Description: FUJI ELECTRIC Semiconductors 1M15060
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Description: TRANS 2NPN 45V 0.025A TO78-6
- Transistor Type: General Purpose BJT
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Supplier: Radwell International
Description: IXYS Semiconductors IXGH24N60AU1
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT TRANSISTOR HIGH RELIABILITY
- Transistor Type: Bipolar RF Transistors
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Supplier: Qorvo
Description: The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain
- Transistor Grade / Operating Range: Military
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Supplier: Qorvo
Description: The QPD1035L is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain
- Transistor Grade / Operating Range: Military
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Supplier: Richardson RFPD
Description: The MMRF5017HS-1GHZ evaluation board features NXP part MMRF5017HS and operates at 1000 MHz. The board includes mounted transistor and all associated components. Full circuit documentation is available via download from NXP (registration required). For further assistance please
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Supplier: Qorvo
Description: The QPD0007 is a single-path discrete GaN on SiC HEMT in a DFN package which operates from DC to 5 GHz. It is a single-stage, unmatched transistor capable of delivering P3dB of 20W at +48 V operation. Lead free and RoHS compliant.
- Package Type: Other
- Transistor Grade / Operating Range: Military
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Supplier: Qorvo
Description: The QPD0005 is a single-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 2.5 to 5.0 GHz. It is a single-stage, unmatched transistor capable of delivering PSAT of 8.7 W at +48 V operation. Lead free and RoHS compliant.
- Package Type: Other
- Transistor Grade / Operating Range: Military
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT PTD HIGH VOLTAGE
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT AF TRANSISTORS
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: TRANSISTOR BIPOLAR .9GHZ 3-SMINI
- Package Type: Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: RF POWER TRANSISTORS
- Transistor Type: Bipolar RF Transistors
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Supplier: Acme Chip Technology Co., Limited
Description: RF MOSFET
- Transistor Type: MOSFET
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 50V 150mW 120@1mA,6V 150mA 2PCSPNP SC-70-6(SOT-363) Bipolar Transistors - BJT ROHS
- Polarity: PNP
- Transistor Type: Bipolar RF Transistors
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Supplier: Northrop Grumman Corporation
Description: is configured for common base operation and is tested at 800 ns pulse width with 1% duty cycle. WPTB32A1214A 1215-1400 MHz Bipolar RF Transistor The WPTB32A1214A is a high-power NPN transistor designed for pulsed radar applications. The 3217 L-Band die utilized in this device is
- Transistor Grade / Operating Range: Military
- Transistor Type: Bipolar RF Transistors
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Supplier: Wolfspeed
Description: Wolfspeed’s CGHV40180 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input match to deliver the best possible instantaneous broadband performance from DC-2.0 GHz. GaN has superior properties compared to silicon or gallium arsenide, including higher
- Package Type: Other
- Transistor Type: HEMT
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Supplier: MACOM
Description: At MACOM we offer a broad range of TMOS and DMOS RF power MOSFET transistor products as discrete devices from DC to 1.0 GHz. Our high power MOSFET transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical
- Package Type: Other
- Transistor Grade / Operating Range: Commercial, Industrial
- Transistor Type: MOSFET RF Transistors
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Supplier: Infineon Technologies AG
Description: HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Richardson RFPD
Description: 2½W, 10dB gain @ 1GHz. Excellent surface-mount part for hand-held applications.
- Package Type: Other
- Transistor Type: MOSFET RF Transistors
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Supplier: ROHM Semiconductor USA, LLC
Description: Transistor
- Package Type: Other
- Polarity: P-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: MOSFET
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 500W @ 12us/3%/50V ¦ 2.856GHz Operating Frequency ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required ¦ Specified For
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Microchip Technology, Inc.
Description: MMA142AA is a self-biased (requiring only a single positive supply, using on-chip choke), gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) distributed amplifier die that operates between 1 GHz and 34
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 863654-BC858BDW1T1 Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status:
- Package Type: SOT3
- Transistor Type: Bipolar RF Transistors
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The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
Browse RF Transistors Datasheets for Qorvo -
The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo -
?off frequency, supports DC–56GHz full?range microwave signal transmission, adapts to multi?band communication needs Superior signal stability: Multi?contact structure reduces rotation?caused jitter, low insertion loss (<1dB), tiny loss fluctuation (<0.5dB), stable (read more)
Browse RF Transistors Datasheets for JiuJiang Ingiant Technology Co., Ltd. -
collector-emitter breakdown voltage of 60V. With a low saturation voltage of 1.6V at 50mA to 500mA and a minimum DC current gain (hFE) of 100 at 150mA and 10V, this transistor offers efficient switching and amplification capabilities. The 2N2907AUB is RoHS compliant (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
Browse Transistors Datasheets for Win Source Electronics -
Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
Browse Transistors Datasheets for Win Source Electronics -
In an effort to streamline your manufacturing process and improve transistor cooling, Fujipoly® offers a large assortment of box-shaped Sarcon® (read more)
Browse Thermal Compounds and Thermal Interface Materials Datasheets for Fujipoly® America Corp. -
Fujipoly® tube-shaped thermal interface covers provide an easy way to improve transistor cooling while streamlining your manufacturing process. Sarcon® tubes and sleeves are available in several standard sizes to fit many common transistor types and can be custom ordered to your exact (read more)
Browse Thermal Compounds and Thermal Interface Materials Datasheets for Fujipoly® America Corp. -
Fujipoly® tube-shaped thermal interface covers provide an easy way to improve transistor cooling while streamlining your manufacturing process. Sarcon® (read more)
Browse Thermal Compounds and Thermal Interface Materials Datasheets for Fujipoly® America Corp. -
Technology: MOSFET Drain-Source Breakdown Voltage: 60V Continuous Drain Current: 320mA (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 0.8nC @ 4.5V (read more)
Browse Transistors Datasheets for Win Source Electronics
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
, is based on the so-called Gigaprocessor-a proprietary chip said to operate in excess of 1-GHz in performance. Consisting of more than 170 million transistors, the Gigaprocessor is optimized for both commercial and technical applications. Atmel offers SiGe RF circuits for walkie-talkies, remote