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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Transistor
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: RF BIPOLAR TRANSISTOR
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT SS Transistor
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT Transistor PNP
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT TRANSISTOR -80V -1A
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOT-363 Bipolar Transistors - BJT ROHS
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOT-223 Bipolar Transistors - BJT ROHS
- Package Type: SOT223
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOT-23 Bipolar Transistors - BJT ROHS
- Package Type: SOT23
- Transistor Type: Bipolar RF Transistors
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Supplier: Toshiba America, Inc.
Description: Toshiba offers a wide range of bipolar transistors suitable for various applications, including radio-frequency (RF) and power supply devices. Transistors Bipolar Transistors Bias Resistor Built-in Transistors (BRT) IGBTs IEGT (PPI & PMI) Multi-Chip Discrete
- Transistor Type: General Purpose BJT, Bipolar RF Transistors, IGBT
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT 1A
- Polarity: PNP, Other
- Transistor Type: General Purpose BJT, Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Renesas Electronics America Win Source Part Number: 906378-2SC945A-A Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status:
- Package Type: SOT3
- Transistor Type: Bipolar RF Transistors
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Supplier: Northrop Grumman Corporation
Description: is configured for common base operation and is tested at 800 ns pulse width with 1% duty cycle. WPTB32A1214A 1215-1400 MHz Bipolar RF Transistor The WPTB32A1214A is a high-power NPN transistor designed for pulsed radar applications. The 3217
- Transistor Grade / Operating Range: Military
- Transistor Type: Bipolar RF Transistors
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Description: TRANSISTOR
- Transistor Type: MOSFET
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Supplier: Richardson RFPD
Description: Designed primarily for high voltage applications as a high power linear amplifiers from 2 to 30 MHz. Ideal for marine and base station equipment.
- Package Type: Other
- Transistor Type: Power BJT Transistors
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Supplier: Rochester Electronics
Description: RF Small Signal Bipolar Transistor
- Package Type: Other
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) Potential Applications For AF input
- Package Type: SOT23, Other
- Polarity: PNP, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Renesas Electronics America Win Source Part Number: 855219-2SC5289-T1-A Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 46 pct
- Package Type: SOT3
- Transistor Type: Bipolar RF Transistors
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Supplier: Nexperia B.V.
Description: NPN power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain selections High power dissipation capability
- Package Type: Other
- Polarity: NPN
- Transistor Type: Power BJT Transistors
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Supplier: ROHM Semiconductor USA, LLC
Description: Transistor
- Package Type: Other
- Polarity: P-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: MOSFET
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Supplier: MACOM
Description: At MACOM we offer a broad range of TMOS and DMOS RF power MOSFET transistor products as discrete devices from DC to 1.0 GHz. Our high power MOSFET transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical
- Package Type: Other
- Transistor Grade / Operating Range: Commercial, Industrial
- Transistor Type: MOSFET RF Transistors
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed transistor part number IB3000S200 is designed to operate in class C mode. This common base device supplies a minimum of 200 watts of peak pulse power under the conditions of 12ìs pulse width and 1% duty cycle. All devices are 100% screened for large signal
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor
- Package Type: Other
- Polarity: PNP
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Supplier: Utmel Electronic Limited
Description: RF Bipolar Transistors RF BIP TRANSISTOR
- Noise Figure: 0.9500 dB
- Number of Transistors in the Chip: 1
- Packing Method: Tape Reel, Other
- Polarity: NPN, Other
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Operating Frequency: 500 to 1000 MHz
- Output Power: 5 watts
- Package Type: Other
- Power Gain: 10 dB
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Supplier: Twilight Technology Inc.
Description: Twilight Technology, Inc. specializes in IC packaging and testing services focused on providing solutions for high reliability applications or obsolete components. Twilight Technology has manufactured and marketed a variety of standard and proprietary semiconductor packaging
- Transistor Type: Power BJT Transistors
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Description: TRANSISTOR
- Packing Method: Bulk Pack, Other
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Supplier: ODG (Origin Data Global)
Description: NPN TRANSISTOR
- IC(max): 35 milliamps
- Noise Figure: 1.8 dB
- Operating Frequency: 10000 MHz
- Output Power: 0.2000 watts
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Supplier: PANJIT SemiConductor
Description: Small signal bipolar junction transistor
- Package Type: Other
- Polarity: PNP
- Transistor Type: General Purpose BJT
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Supplier: Broadcom Inc.
Description: Microcurrent device offering good RF performance at 1mA-20mA. The AT-320XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1dB, Gain=14dB at 3V, 2mA; P1dB= 13dBm at 3V, 20mA (all at
- Package Type: Other
- Polarity: NPN, Other
- Transistor Grade / Operating Range: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Semicoa
Description: SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also available
- Package Type: Other
- Polarity: PNP
- Transistor Grade / Operating Range: Military
- Transistor Type: General Purpose BJT
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOP-18 Darlington Transistor Arrays ROHS
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Featured Products Top
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The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
Browse RF Transistors Datasheets for Qorvo -
Technology: MOSFET Drain-Source Breakdown Voltage: 60V Continuous Drain Current: 320mA (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 0.8nC @ 4.5V (read more)
Browse Transistors Datasheets for Win Source Electronics -
collector-emitter breakdown voltage of 60V. With a low saturation voltage of 1.6V at 50mA to 500mA and a minimum DC current gain (hFE) of 100 at 150mA and 10V, this transistor offers efficient switching and amplification capabilities. The 2N2907AUB is RoHS compliant (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
Browse Transistors Datasheets for Win Source Electronics -
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
Browse Transistors Datasheets for Win Source Electronics -
In this demo, Nexperia's high power Bipolar Junction Transistors (BJT) are utilized as a high voltage current source in an LED lighting application. The set-up shows the well established discrete solution - a combination of precision shunt (read more)
Browse Power Bipolar Transistors Datasheets for Nexperia B.V. -
The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
Browse Transistors Datasheets for Win Source Electronics -
PSUs, the use of GaN devices enables ~0.8–1.2% efficiency improvement at full load compared to silicon, while supporting ~40–70% increases in power density at the stage level, driven by higher switching frequencies and reduced passive component size. In a typical 1 kW high-voltage motor (read more)
Browse Transistors Datasheets for Nexperia B.V. -
The SMMBT3904LT3G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) tailored for general-purpose amplifier applications. With (read more)
Browse Transistors Datasheets for Win Source Electronics -
The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo
Conduct Research Top
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AN211A: Field Effect Transistors in Theory and Practice, Courtesy of Motorla
the junction field-effect transistor starts with nothing more than a bar of doped silicon that behaves as a resistor (Figure 1a). By convention, the terminal into which current is injected is called the source terminal, since, as far at the FET is concerned, current originates from this terminal