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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1A. Search-friendly keywords include transistor, BJT, switching, amplification, 1A, Bipolar Transistor, Single Bipolar Transistors. This
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 0.1A, Bipolar Transistor, Single Bipolar Transistors.
- IC(max): 100 milliamps
- VCBO: 80 volts
- PD: 330 milliwatts
- TJ: -55 C
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 1A. Search-friendly keywords include transistor, BJT, switching, amplification, SMD, 1A, Bipolar Transistor, Single Bipolar Transistors. This
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 1A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 1A, Bipolar Transistor, Bipolar RF Transistors. This listing
- IC(max): 1,000 milliamps
- VCEO: 50 volts
- PD: 19,000 milliwatts
- TJ: -65 C
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, PNP, 80V, 1A; Transistor Polarity:PNP; Collector Emitter Voltage Max:80V; Continuous Collector Current:1A; Power Dissipation:850mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:50MHz RoHS Compliant: No
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Supplier: Newark, An Avnet Company
Description: DIGITAL TRANSISTOR, -0.1A; Digital Transistor Polarity:Single PNP; Collector Emitter Voltage V(br)ceo:-; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:47kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / RoHS Compliant: Yes
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Transistor
- Features: Bipolar RF Transistors
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Supplier: Newark, An Avnet Company
Description: DIGITAL TRANSISTOR, 50V, 0.1A; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / RoHS Compliant: Yes
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 40V 300mW 300@150mA,10V 600mA NPN SOT-23 Bipolar Transistors - BJT ROHS
- IC(max): 600 milliamps
- VCEO: 40 volts
- fT: 300 MHz
- PD: 300 milliwatts
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Supplier: Win Source Electronics
Description: Manufacturer: CEL Win Source Part Number: 115264-NE58219-T1-A Packaging: Cut Reel Mounting: SMD (SMT) Frequency - Transition: 5GHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 125°C (TJ) Case / Package:
- IC(max): 60 milliamps
- VCEO: 12 volts
- Power Gain: 60 dB
- PD: 100 milliwatts
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Supplier: Win Source Electronics
Description: Manufacturer: Renesas Electronics America Win Source Part Number: 855049-2SA1610-T1-A Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited
- Features: Bipolar RF Transistors
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 1174917-FMY1A Manufacturer Homepage: www.rohm.com RoHS State: Request Verification Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 205147-IMB1A Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 2 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Not For
- Features: Other
- Polarity: PNP
- Package Type: SOT3
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Supplier: ODG (Origin Data Global)
Description: TRANSISTOR BIPOLAR .9GHZ 3-SMINI
- IC(max): 60 milliamps
- VCEO: 12 volts
- Operating Frequency: 5,000 MHz
- Output Power: 0.1 watts
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT 1A
- VCEO: 60 volts
- IC(max): 1,000 milliamps
- PD: 300 milliwatts
- TJ: -55 to 150 C
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Supplier: ODG (Origin Data Global)
Description: 30V 115A 2.1mΩ@10V,20A 83W 1.6V@250uA 1 N-Channel DFN(5x6) MOSFETs ROHS
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 250V 1A, DPAK
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Supplier: Infineon Technologies AG
Description: PNP Silicon Switching Transistor Summary of Features Low collector-emitter saturation voltage Complementary type: SMBT2222A / MMBT2222A (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101
- IC(max): 150 to 600 milliamps
- VCEO: 60 volts
- VCBO: 60 volts
- fT: 200 MHz
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT 180V 1A NPN HI VLTGE LO VCESAT TRANSISTOR
- VCEO: 180 volts
- IC(max): 1,000 milliamps
- PD: 300 milliwatts
- TJ: 150 C
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Description: Integrated Circuits (ICs) - Transistors - Bipolar Transistors - BJT
- TJ: -55 to 150 C
- Features: General Purpose BJT
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 60V 1A, TO-220
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Supplier: Allied Electronics, Inc.
Description: Transistor, NPN, 1A, 250V, TO-39
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 100V 1A, TO-220
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Supplier: VAST STOCK CO., LIMITED
Description: Transistor Output Optocouplers Hi-Iso Photo 1-Ch
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) Potential Applications For AF input stages
- IC(max): 100 milliamps
- VCEO: 45 volts
- VCBO: 50 volts
- fT: 250 MHz
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q1011 BC847BL3 is not qualified according AEC Q101
- IC(max): 100 milliamps
- VCEO: 45 volts
- VCBO: 50 volts
- fT: 250 MHz
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Supplier: RS Components, Ltd.
Description: PNP power transistor,MJ15004,20A BP
- TJ: 200 C
- Number of Transistors in the Chip: 1
- Features: General Purpose BJT, Other
- Polarity: PNP
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Supplier: DigiKey
Description: RF Transistor NPN 6V 100mA 4.5GHz 200mW Surface Mount SOT-23-3
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Nexperia B.V.
Description: NPN switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits High current (max. 600 mA) Low voltage (max. 40 V) AEC-Q101 qualified Applications Switching and linear amplification
- Transistor Grade / Operating Range: Automotive
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN 65V 100mA 330mW Surface Mount SOT-23
- Transistor Grade / Operating Range: Automotive
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Nexperia B.V.
Description: NPN power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain selections High power dissipation capability AEC-Q101 qualified Applications Linear voltage regulators
- hfe: 63 to 250
- VCEO: 60 volts
- IC(max): 1,000 milliamps
- PD: 500 milliwatts
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Supplier: DigiKey
Description: Optoisolator Transistor Output 5000Vrms 1 Channel 4-DIP
- Isolation Voltage: 5,000 volts
- Rise Time: 3 µs
- Operating Temperature: -55 to 100 C
- Input: DC
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Supplier: Nexperia B.V.
Description: NPN power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain selections High power dissipation capability AEC-Q101 qualified Applications Linear voltage regulators
- hfe: 63 to 250
- VCEO: 80 volts
- IC(max): 1,000 milliamps
- PD: 500 milliwatts
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Supplier: Utmel Electronic Limited
Description: RF Bipolar Transistors NPN Silicon Amp
- VCEO: 12 volts
- Power Gain: 9 dB
- Noise Figure: 1.2 dB
- Output Power: 0.125 watts
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Supplier: Richardson RFPD
Description: The MAPC-A1500 is a high power GaN on SiliconCarbide HEMT D-mode amplifier suitable for960 - 1215 MHz frequency operation. The devicesupports pulsed operation with output power levelsof 2600 W (64.1 dBm) at 65 V and 2000 W(63.0 dBm) at 50 V and in an air cavity ceramicpackage.
- Power Gain: 18.3 dB
- Output Power: 2,600 watts
- Operating Frequency: 960 to 1,215 MHz
- Features: Other
Find Suppliers by Category Top
Featured Products Top
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The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
Browse RF Transistors Datasheets for Qorvo -
Technology: MOSFET Drain-Source Breakdown Voltage: 60V Continuous Drain Current: 320mA (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 0.8nC @ 4.5V (read more)
Browse Transistors Datasheets for Win Source Electronics -
collector-emitter breakdown voltage of 60V. With a low saturation voltage of 1.6V at 50mA to 500mA and a minimum DC current gain (hFE) of 100 at 150mA and 10V, this transistor offers efficient switching and amplification capabilities. The 2N2907AUB is RoHS compliant (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
Browse Transistors Datasheets for Win Source Electronics -
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
Browse Transistors Datasheets for Win Source Electronics -
In this demo, Nexperia's high power Bipolar Junction Transistors (BJT) are utilized as a high voltage current source in an LED lighting application. The set-up shows the well established discrete solution - a combination of precision shunt (read more)
Browse Power Bipolar Transistors Datasheets for Nexperia B.V. -
The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
Browse Transistors Datasheets for Win Source Electronics -
PSUs, the use of GaN devices enables ~0.8–1.2% efficiency improvement at full load compared to silicon, while supporting ~40–70% increases in power density at the stage level, driven by higher switching frequencies and reduced passive component size. In a typical 1 kW high-voltage motor (read more)
Browse Transistors Datasheets for Nexperia B.V. -
The SMMBT3904LT3G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) tailored for general-purpose amplifier applications. With (read more)
Browse Transistors Datasheets for Win Source Electronics -
The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo
Conduct Research Top
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AN211A: Field Effect Transistors in Theory and Practice, Courtesy of Motorla
the junction field-effect transistor starts with nothing more than a bar of doped silicon that behaves as a resistor (Figure 1a). By convention, the terminal into which current is injected is called the source terminal, since, as far at the FET is concerned, current originates from this terminal