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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1A. Search-friendly keywords include transistor, BJT, switching, amplification, 1A, Bipolar Transistor, Single Bipolar Transistors. This
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 0.1A, Bipolar Transistor, Single Bipolar Transistors.
- IC(max): 100 milliamps
- VCBO: 80 volts
- PD: 330 milliwatts
- TJ: -55 C
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 1A. Search-friendly keywords include transistor, BJT, switching, amplification, SMD, 1A, Bipolar Transistor, Single Bipolar Transistors. This
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 1A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 1A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer
- IC(max): 1,000 milliamps
- VCEO: 80 volts
- VCBO: 80 volts
- PD: 1,000 milliwatts
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, PNP, 80V, 1A; Transistor Polarity:PNP; Collector Emitter Voltage Max:80V; Continuous Collector Current:1A; Power Dissipation:850mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:50MHz RoHS Compliant: No
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Supplier: Newark, An Avnet Company
Description: DIGITAL TRANSISTOR, -0.1A; Digital Transistor Polarity:Single PNP; Collector Emitter Voltage V(br)ceo:-; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:2.2kohm; Resistor Ratio, R1 / RoHS Compliant: Yes
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Transistor
- Features: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 40V 300mW 300@150mA,10V 600mA NPN SOT-23 Bipolar Transistors - BJT ROHS
- IC(max): 600 milliamps
- VCEO: 40 volts
- fT: 300 MHz
- PD: 300 milliwatts
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Supplier: Newark, An Avnet Company
Description: DIGITAL TRANSISTOR, 50V, 0.1A; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / RoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Manufacturer: CEL Win Source Part Number: 115264-NE58219-T1-A Packaging: Cut Reel Mounting: SMD (SMT) Frequency - Transition: 5GHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 125°C (TJ) Case / Package:
- IC(max): 60 milliamps
- VCEO: 12 volts
- Power Gain: 60 dB
- PD: 100 milliwatts
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Supplier: Win Source Electronics
Description: Manufacturer: Renesas Electronics America Win Source Part Number: 855049-2SA1610-T1-A Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited
- Features: Bipolar RF Transistors
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 1174917-FMY1A Manufacturer Homepage: www.rohm.com RoHS State: Request Verification Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 205147-IMB1A Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 2 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Not For
- Features: Other
- Polarity: PNP
- Package Type: SOT3
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT 1A
- VCEO: 60 volts
- IC(max): 1,000 milliamps
- PD: 300 milliwatts
- TJ: -55 to 150 C
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Supplier: ODG (Origin Data Global)
Description: TRANSISTOR BIPOLAR .9GHZ 3-SMINI
- IC(max): 60 milliamps
- VCEO: 12 volts
- Operating Frequency: 5,000 MHz
- Output Power: 0.1 watts
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Supplier: ODG (Origin Data Global)
Description: 30V 115A 2.1mΩ@10V,20A 83W 1.6V@250uA 1 N-Channel DFN(5x6) MOSFETs ROHS
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 250V 1A, DPAK
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Supplier: Infineon Technologies AG
Description: PNP Silicon Switching Transistor Summary of Features Low collector-emitter saturation voltage Complementary type: SMBT2222A / MMBT2222A (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101
- IC(max): 150 to 600 milliamps
- VCEO: 60 volts
- VCBO: 60 volts
- fT: 200 MHz
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT 180V 1A NPN HI VLTGE LO VCESAT TRANSISTOR
- VCEO: 180 volts
- IC(max): 1,000 milliamps
- PD: 300 milliwatts
- TJ: 150 C
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 100V 1A, TO-220
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Supplier: VAST STOCK CO., LIMITED
Description: Transistor Output Optocouplers Hi-Iso Photo 1-Ch
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Description: Integrated Circuits (ICs) - Transistors - Bipolar Transistors - BJT
- TJ: -55 to 150 C
- Features: General Purpose BJT
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Supplier: Allied Electronics, Inc.
Description: Transistor, NPN, 1A, 250V, TO-39
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 500V 1A, TO-220
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) Potential Applications For AF input stages
- IC(max): 100 milliamps
- VCEO: 45 volts
- VCBO: 50 volts
- fT: 250 MHz
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q1011 BC847BL3 is not qualified according AEC Q101
- IC(max): 100 milliamps
- VCEO: 45 volts
- VCBO: 50 volts
- fT: 250 MHz
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Supplier: DigiKey
Description: RF Transistor NPN 5V 40mA 150mW Surface Mount SOT-343
- Polarity: NPN
- Features: Other
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Supplier: RS Components, Ltd.
Description: PNP power transistor,MJ15004,20A BP
- TJ: 200 C
- Number of Transistors in the Chip: 1
- Features: General Purpose BJT, Other
- Polarity: PNP
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN 65V 100mA 330mW Surface Mount SOT-23
- Transistor Grade / Operating Range: Automotive
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Nexperia B.V.
Description: NPN switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits High current (max. 600 mA) Low voltage (max. 40 V) AEC-Q101 qualified Applications Switching and linear amplification
- Transistor Grade / Operating Range: Automotive
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Nexperia B.V.
Description: PNP power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Table 1.Product overview Type number - Package - NPN complement Nexperia - JEITA - JEDEC BCX51T SOT89 SC-62 TO-243 BCX54T BCX51-10T BCX54-10T BCX51-16T BCX54-16T Features and benefits High
- VCEO: -45 volts
- IC(max): -1 milliamps
- PD: 500 milliwatts
- TJ: 150 C
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Supplier: Nexperia B.V.
Description: NPN power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Table 1.Product overview Type number - Package - NPN complement Nexperia - JEITA - JEDEC BCX55T SOT89 SC-62 TO-243 BCX52T BCX55-10T BCX52-10T BCX55-16T BCX52-16T Features and benefits High
- VCEO: 60 volts
- IC(max): 1 milliamps
- PD: 500 milliwatts
- TJ: 150 C
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Supplier: DigiKey
Description: Optoisolator Transistor Output 5000Vrms 1 Channel 4-DIP
- Isolation Voltage: 5,000 volts
- Rise Time: 3 µs
- Operating Temperature: -55 to 100 C
- Input: DC
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Supplier: Nexperia B.V.
Description: PNP power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Table 1.Product overview Type number - Package - NPN complement Nexperia - JEITA - JEDEC BCX52T SOT89 SC-62 TO-243 BCX55T BCX52-10T BCX55-10T BCX52-16T BCX55-16T Features and benefits High
- VCEO: -60 volts
- IC(max): -1 milliamps
- PD: 500 milliwatts
- TJ: 150 C
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Supplier: ROHM Semiconductor GmbH
Description: BSS4130A is a SOT-23 package Transistor for low frequency amplifier, driver.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Featured Products Top
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The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
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PSUs, the use of GaN devices enables ~0.8–1.2% efficiency improvement at full load compared to silicon, while supporting ~40–70% increases in power density at the stage level, driven by higher switching frequencies and reduced passive component size. In a typical 1 kW high-voltage motor (read more)
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The SMMBT3904LT3G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) tailored for general-purpose amplifier applications. With (read more)
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QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
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QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
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QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
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Fujipoly® tube-shaped thermal interface covers provide an easy way to improve transistor cooling while streamlining your manufacturing process. Sarcon® (read more)
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Conduct Research Top
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AN211A: Field Effect Transistors in Theory and Practice, Courtesy of Motorla
the junction field-effect transistor starts with nothing more than a bar of doped silicon that behaves as a resistor (Figure 1a). By convention, the terminal into which current is injected is called the source terminal, since, as far at the FET is concerned, current originates from this terminal