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Supplier: Newark, An Avnet Company
Description: RF TRANSISTOR, PNP, -600mV, 1.1GHZ; Transistor Polarity:PNP; Collector Emitter Voltage Max:600mV; Transition Frequency:1.1GHz; Power Dissipation:360mW; Continuous Collector Current:200mA; No. of Pins:3Pins; Product Range:-; MSL:- RoHS Compliant: Yes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10V, 1GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 10V, 1GHZ, Bipolar Transistor, Bipolar RF
- PD: 100 milliwatts
- TJ: 125 C
- Features: Bipolar RF Transistors, Other
- Polarity: NPN
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5V, 1GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 5V, 1GHZ, Bipolar Transistor, Bipolar RF
- Noise Figure: 2.4 dB
- PD: 100 milliwatts
- TJ: 125 C
- Features: Bipolar RF Transistors, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 3.1GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 75V, 3.1GHZ, Bipolar Transistor, Bipolar RF Transistors.
- VCEO: 75 volts
- TJ: 200 C
- Features: Bipolar RF Transistors, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 6 GHz. Search-friendly keywords include transistor, BJT, switching, amplification, 6 GHz, Bipolar Transistor, Bipolar RF
- Features: Bipolar RF Transistors
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Supplier: Newark, An Avnet Company
Description: RF TRANSISTOR, NPN, 20V, 1.2GHZ; Transistor Polarity:NPN; Collector Emitter Voltage Max:20V; Transition Frequency:1.2GHz; Power Dissipation:2.5W; Continuous Collector Current:400mA; No. of Pins:3Pins; DC Current Gain hFE Min:40hFE RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: RF TRANSISTOR, NPN, 4.1V, 42GHZ, TSFP; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:4.1V; Transition Frequency ft:42GHz; Power Dissipation Pd:200mW; DC Collector Current:50mA; DC Current Gain hFE:110hFE; RF Transistor RoHS Compliant: Yes
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Supplier: Utmel Electronic Limited
Description: Transistors RF MOSFET Power 60W 1GHZ FET TO-270
- V(BR)DSS: 65 volts
- Number of Transistors in the Chip: 1
- Output Power: 60 watts
- Power Gain: 18 dB
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Supplier: Richardson RFPD
Description: The MMRF5017HS-1GHZ evaluation board features NXP part MMRF5017HS and operates at 1000 MHz. The board includes mounted transistor and all associated components. Full circuit documentation is available via download from NXP (registration required). For further assistance please contact
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, AUTO, RF, NPN, 12V, 11GHZ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:11GHz; Power Dissipation Pd:1W; DC Collector Current:30mA; DC Current Gain hFE:95hFE; RF Transistor RoHS Compliant: Yes
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor Array 2 NPN (Dual) Matched Pair 45V 25mA 450MHz 500mW Through Hole TO-78-6
- Polarity: NPN
- Features: Other
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Supplier: Utmel Electronic Limited
Description: Transistors RF MOSFET AF1 2GHz 60W OM780-4
- Output Power: 6.3 watts
- Power Gain: 18.9 dB
- Features: MOSFET, MOSFET RF Transistors, Other
- Polarity: N-Channel
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Supplier: Acme Chip Technology Co., Limited
Description: RF MOSFET
- Features: MOSFET, Other
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Supplier: Qorvo
Description: Qorvo's QPD1823 is a discrete GaN on SiC HEMT which operates from 1.8-2.4 GHz. The device is a single stage matched power amplifier transistor. The QPD1823 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems. QPD1823
- Power Gain: 24 dB
- Operating Frequency: 1,800 to 2,400 MHz
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Supplier: Qorvo
Description: The QPD2195 is a discrete GaN on SiC HEMT which operates from 1.8 - 2.2 GHz. The device is a single stage pre-matched power amplifier transistor. The QPD2195 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.
- Power Gain: 19.1 dB
- Operating Frequency: 1,800 to 2,200 MHz
- Features: Other
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Supplier: Qorvo
Description: Qorvo's TQP0104 is a wide band over-molded QFN discrete GaN power amplifier. The device is a single stage unmatched power amplifier transistor. The TQP0104 can be used in a Doherty architecture for the final stage of a base station power amplifier for small cell, microcell and active antenna
- Power Gain: 17 dB
- Operating Frequency: 0 to 4,000 MHz
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Supplier: Utmel Electronic Limited
Description: RF MOSFET Transistors HV8 2GHZ 140W NI780S
- Output Power: 34 watts
- Power Gain: 17.9 dB
- Features: MOSFET, MOSFET RF Transistors, Other
- Packing Method: Tape Reel
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Supplier: Utmel Electronic Limited
Description: AVAGO TECHNOLOGIES AT-41511-TR1G Bipolar - RF Transistor, NPN, 12 V, 10 GHz, 225 mW, 50 mA, 150
- IC(max): 50 milliamps
- VCEO: 12 volts
- Power Gain: 11 to 15.5 dB
- Noise Figure: 1 to 1.7 dB
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Supplier: Qorvo
Description: The Qorvo QPD1016 is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics, military and civilian radar, and test instrumentation. The device can support
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Supplier: Accuris
Description: Semiconductor Devices - Discrete Devices Part 8: Field-Effect Transistors Section One - Blank Detail Specification for Single-Gate Field-Effect Transistors, up to 5 W and 1 GHz
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Supplier: Skyworks Solutions, Inc.
Description: The SKY65050-372LF is a high performance, n-channel lownoise transistor. The device is fabricated from Skyworks advanced depletion mode pHEMT process and is provided in a 2.20 x 1.35 x 1.10 mm, 4-pin SC-70 package. The transistor’s low Noise Figure (NF), high gain, and excellent 3rd
- Frequency Range: 450 to 6,000 MHz
- Minimum Gain: 15.5 dB
- Maximum Gain: 15.5 dB
- Noise Figure: 0.65 dB
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Supplier: Rochester Electronics
Description: MATCHED Monolithic Dual TRANSISTOR
- Features: Other
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Supplier: ODG (Origin Data Global)
Description: TRANSISTOR BIPOLAR .9GHZ 3-SMINI
- IC(max): 60 milliamps
- VCEO: 12 volts
- Operating Frequency: 5,000 MHz
- Output Power: 0.1 watts
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 40V 200mW 300@10mA,1V 200mA 2 NPN SOT-363 Bipolar Transistors - BJT ROHS
- IC(max): 200 milliamps
- VCEO: 40 volts
- fT: 300 MHz
- PD: 200 milliwatts
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT TRANSISTOR HIGH RELIABILITY
- Features: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 863654-BC858BDW1T1 Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Quantity
- Features: Bipolar RF Transistors
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Broadcom Limited Win Source Part Number: 137034-AT-41533-TR1 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 9dB to 14.5dB Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1dB to 1.6dB @ 900MHz to 2.4GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL)
- IC(max): 50 milliamps
- VCEO: 12 volts
- Power Gain: 30 dB
- Noise Figure: 1 dB
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Supplier: Win Source Electronics
Description: Manufacturer: CEL Win Source Part Number: 1082935-NE85630-T1 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 6dB to 12dB Frequency - Transition: 4.5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.3dB to 2.2dB @ 1GHz to 2GHz Categories: Discrete Semiconductor Products Status:
- Polarity: NPN
- Features: Other
- Package Type: SOT3, SOT323
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 258990-EMX1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 180MHz Transistor Polarity: 2 NPN (Dual) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package:
- Polarity: NPN
- Features: Other
- Package Type: SOT3
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Supplier: DigiKey
Description: RF Transistor NPN 12V 60mA 10.5GHz 1W Surface Mount SOT-89-3
- Polarity: NPN
- Features: Other
- Package Type: SOT89
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Supplier: ODG (Origin Data Global)
Description: SSOP-4 Transistor, Photovoltaic Output Optoisolators ROHS
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Supplier: Accuris
Description: SMALL-SIGNAL SCATTERING PARAMETERS OF LOW-POWER TRANSISTORS IN THE 0.2 TO 2.0-GHZ FREQUENCY RANGE
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Description: Integrated Circuits (ICs) - Transistors - Bipolar Transistors - BJT
- Features: General Purpose BJT
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Supplier: Wolfspeed
Description: Wolfspeed’s CGHV1J070D is a high-voltage gallium-nitride (GaN) high electron mobility transistor (HEMT) on a silicon-carbide substrate, using a 0.25-μm gate length fabrication process. This GaN-on-SiC product offers superior high-frequency, high-efficiency features. It is ideal for a variety
- Output Power: 70 watts
- Operating Frequency: 18,000 MHz
- Features: HEMT, Other
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Supplier: Wolfspeed
Description: Wolfspeed’s CGHV1F006S is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities. The device can be deployed for L, S, C, X and Ku-band amplifier applications. The data sheet
- Power Gain: 7 dB
- Output Power: 6 watts
- Operating Frequency: 18,000 MHz
- Features: HEMT, Other
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The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
Browse RF Transistors Datasheets for Qorvo -
?off frequency, supports DC–56GHz full?range microwave signal transmission, adapts to multi?band communication needs Superior signal stability: Multi?contact structure reduces rotation?caused jitter, low insertion loss (<1dB), tiny loss fluctuation (<0.5dB), stable (read more)
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In an effort to streamline your manufacturing process and improve transistor cooling, Fujipoly® offers a large assortment of box-shaped Sarcon® (read more)
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Fujipoly® tube-shaped thermal interface covers provide an easy way to improve transistor cooling while streamlining your manufacturing process. Sarcon® tubes and sleeves are available in several standard sizes to fit many common transistor types and can be custom ordered to your exact (read more)
Browse Thermal Compounds and Thermal Interface Materials Datasheets for Fujipoly® America Corp. -
Fujipoly® tube-shaped thermal interface covers provide an easy way to improve transistor cooling while streamlining your manufacturing process. Sarcon® (read more)
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Technology: MOSFET Drain-Source Breakdown Voltage: 60V Continuous Drain Current: 320mA (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 0.8nC @ 4.5V (read more)
Browse Transistors Datasheets for Win Source Electronics -
PSUs, the use of GaN devices enables ~0.8–1.2% efficiency improvement at full load compared to silicon, while supporting ~40–70% increases in power density at the stage level, driven by higher switching frequencies and reduced passive component size. In a typical 1 kW high-voltage motor (read more)
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The Omron G9EA-1-B DC24 is a compact, high-capacity electromechanical relay designed for switching and interrupting high-voltage DC power circuits. It combines a 24 VDC electromagnetic coil with a single-pole, single-throw normally open contact in a gas (read more)
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Microelectronics make the world go ‘round. There’s not much left that doesn’t have a semiconductor chip of some sort in it. The semiconductor chip itself is something of modern miracle. The current generation of CPU chips is packing in excess of two billion transistors onto a die about 1-inch square. (read more)
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
, is based on the so-called Gigaprocessor-a proprietary chip said to operate in excess of 1-GHz in performance. Consisting of more than 170 million transistors, the Gigaprocessor is optimized for both commercial and technical applications. Atmel offers SiGe RF circuits for walkie-talkies, remote