Products/Services for 200 Volt 40 Amp MOSFET
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Power MOSFET - (239 companies)Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors...TechnologyPolarityOperating Mode -
RF MOSFET Transistors - (92 companies)MOSFET RF transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. MOSFET RF transistors... -
Metal-Oxide Semiconductor FET (MOSFET) - (362 companies)Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts. Metal... -
Gate Drivers - (222 companies)Gate drivers are electronic circuits that apply correct power levels to metal-oxide field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs). With power-MOSFETs, gate drivers can be implemented as transformers, discrete... -
AC-DC Converter Chips - (123 companies)AC to DC converter chips transfer an AC input into DC power using switching (MOSFET, IGBT) or rectification (diodes, Schottky diodes). How to Select AC to DC Converter Chips. Image Credits: Digi-Key Corporation and Texas Instruments. AC DC converter... -
Solid State Relays - (699 companies)Dropout voltage is also known as turn-off voltage. Outputs. Solid state relays output "on" or "off" switching signals using one of a variety of different internal components. Metal-oxide-semiconductor field-effect transistors (MOSFET) are frequently...
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Insulated Gate Bipolar Transistors (IGBT) - (204 companies)Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching...
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RF Rotary Joints - (29 companies)Radio frequency (RF) rotary joints are electro-mechanical devices that provide crucial interfaces between stationary and rotating sections of radar and other rotating systems.
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Power Amplifiers - (191 companies)...high power amplifiers. audio power amplifiers. power acoustic amplifiers. microwave amplifiers. MOSFET power amplifiers. An RF power amplifier is used to amplify radio frequency (RF) transmissions. A high power amplifier is used to amplify high...
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Junction Field-Effect Transistors (JFET) - (94 companies)...metal oxide semiconductor FETs (MOSFET). Due to their relatively higher transconductance properties, JFETs are especially suitable for low noise operational amplifiers. Standards. SMD 5962-98636 - JFET Op-Amp. SMD 5962-87718 - JFET Multiplexer...
Product News
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Nexperia B.V.
DFN0603 MOSFETs Nexperia's new package DFN0603, the market's smallest DFN packaged MOSFET. This new ultra-small package allows designers to achieve more performance in a smaller footprint, with a 74% reduction in RDS(on) as well as using 13% less space when comparing to the industry's next smallest package (DFN0604). These benefits mean the package is the perfect fit for next generation portables, wearables and mobile devices. (read more)Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
Nexperia B.V.
LFPAK56D Power MOSFETs Packing even more into the power-SO8 footprint, the LFPAK56D fits 2 MOSFETs into one robust package without compromising on performance. Allowing customers to optimise their design and apply tighter tolerance in operation. Ideal for space constrained applications, such as portable power tools, and hand-held appliances. (read more) -
Win Source Electronics
FDS6681Z MOSFET for Power Control Looking for a reliable MOSFET for efficient power and load management?. The FDS6681Z N-channel MOSFET is designed for low- to medium-voltage power systems where efficiency, thermal stability, and reliable switching are critical. Its low RDS(on) helps reduce conduction losses and heat generation, while moderate gate drive requirements simplify integration into power management and control circuits. Key Features: Low RDS(on) for reduced power loss. Efficient load switching and power path control... (read more)Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics -
New Yorker Electronics Co., Inc.
New High Efficiency MOSFETs Vishay introduces the SiHK050N65E, an advanced Gen 4.5 650 V E Series power MOSFET delivering superior efficiency for telecom, industrial, and computing applications. This n-channel MOSFET achieves 48.2% lower on-resistance and 65.4% improved resistance times gate charge FOM compared to previous generations. Built on E Series superjunction technology, the SiHK050N65E features a typical on-resistance of just 0.048 O at 10 V, enabling higher power ratings for applications exceeding 6 kW. With 50... (read more) -
Win Source Electronics
High-Popularity MOSFET - BSS123NH6327XTSA1 Infineon Technologies BSS123NH6327XTSA1 is an OptiMOS TM product suitable for various discrete semiconductor applications. Detailed Description: Operating Temperature Range: -55 C to 150 C (TJ). Package: TO-236-3, SC-59, SOT-23-3. Max Gate-Source Voltage: +-20V. Max Input Capacitance: 5305pF @ 13V. Features: N-Channel MOSFET, surface mount. High-popularity product, balanced supply and demand. Suitable for discrete semiconductor products. Applications: Communication equipment. Power management... (read more)Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics -
Nexperia B.V.
Nexperia CCPAK Power MOSFETs Nexperia today announced the launch of 16 new 80 V and 100 V power MOSFETs in the innovative copper-clip CCPAK1212 package, delivering industry-leading power density and outright performance. The innovative copper-clip design provides high current conduction, reduced parasitic inductance, and excellent thermal performance. These features make the devices ideal for motor control, power supplies, renewable energy systems, and other power-hungry applications. The range also includes... (read more)Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
Win Source Electronics
2N7002ET1G N-Channel MOSFET Product Overview The 2N7002ET1G from ON Semiconductor is a versatile N-Channel MOSFET designed to meet the needs of a wide range of electronic applications, offering high performance and efficiency. Key Features. Drain-Source Breakdown Voltage: 60V. Continuous Drain Current: 260mA at 25 C. Gate-Source Threshold Voltage: 2.5V @ 250 mA. Maximum Rds On: 2.5 Ohm @ 240mA, 10V. Max Gate Charge: 0.81nC @ 5V. Max Input Capacitance: 26.7pF @ 25V. Fast Switching Speed: Turn-on delay time of 3ns, Turn-off... (read more)Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics -
Richardson RFPD
Wolfspeed Gen 4 MOSFETs Wolfspeed offers a new family of 1200 V Silicon Carbide (SiC) MOSFETs that are optimized for use in high power applications such as solar and energy storage systems, EV charging, Uninterruptible Power Supplies (UPS), motor drives, switched-mode power supplies, high-voltage DC/DC converters, and more. Based on a new technology generation, Wolfspeed 's 1200 V SiC MOSFETs include a range of on-resistance options that enable designers to select the right part for their applications. Why Industrial... (read more)Browse Power MOSFET Datasheets for Richardson RFPD -
New Yorker Electronics Co., Inc.
N-Channel MOSFETs Good-Ark Semiconductor introduces the GSFA20106, a high-performance 200V, 106A, 9.4m O N-Channel MOSFET designed for demanding high-frequency switching applications. Engineered with the latest deep trench technology and advanced process techniques, this MOSFET achieves ultra-low RDS(ON) and minimized gate charge, enhancing efficiency and power density. Its high repetitive avalanche rating ensures durability and reliability in challenging environments, making it a preferred choice for power... (read more) -
Nexperia B.V.
DSN small-signal MOSFETs We recently announced the launch of our two new DSN packages, DSN1006 & DSN1010. These new ultra-compact wafer-level packages provide designers more flexibility of choice within mobile and portable applications. With RDS(on) up to 25% better than competing devices in the market, the packages minimise energy losses, increase efficiency and reduce self heating thereby being the optimum solution for wearable devices. (read more)Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V.
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CCD and IR array controllers
… twelve switch states on a clock driver can be changed in a single 40 nanosec instruction cycle. The clock drivers for the array operate with a fast op amp circuit connected to the analog switch that produces 60 mA of sustained output current, and slews over a ten volt range in 20 nanosec with no load. The clock drivers for JR arrays are much gentler, switching in 200 nanosec for a four volt … MOSFET switches are placed between the clock drivers and the output of the board to prevent voltage …
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http://www.microsemi.com/document-portal/doc_download/14694-latest-technology-pt-igbts-vs-power-mosfets
40 … frequency versus current of an APT15GP60B IGBT (IC2 = 27 Amps) with an APT6029BLL MOSFET (ID = 21 Amps). The same 15 Amp , 600 Volt output diode was used for each part. Each part can operate at 200 kHz, 14 Amps.
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Page 46. Semiconductor parts with 160 in root number
40 AMPS 50 ? 300 VOLTS HYPER FAST RECOVERY THREE PHASE BRIDGE RECTIFIER 50 AMP 100 VOLTS 0.04 ohm RADIATION HARDENED N-Channel Power MOSFET 500mW and 800mW 2.4 - 200 VOLTS ZENER DIODES .
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Page 2. Semiconductor parts with 943 in root number
MOSFET 40 AMP ULTRA FAST RECOVERY RECTIFIER 300- 600 VOLTS 1 AMPS 200 -1000 VOLTS 150-200 nsec FAST RECOVERY RECTIFIER .
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CAPACITIVE TOMOGRAPHY FOR THE LOCATION OF PLASTIC PIPE
Differential signals that were in the 40 mV to 500-mV range were being detected across the … This small differential signal was on top off the 50- volt common mode bias signal. Consideration was also given to using high voltage bipolar or mosfet transistors to level shift the signal. This op amp utilizes a balanced high precision resistor network that enabled it to handle common mode voltage up to 200 volts.
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Page 32. Semiconductor parts with 130 in root number
10 AMP /100 Volts 300 m?© P-Channel MOSFET 200 V, 3 A hyper fast recovery rectifier 3 AMP, 400 - 800 Volts 40 - 50 nsec, Hyper Fast Rectifier .
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http://www.microsemi.com/document-portal/doc_download/14814-powermite-surface-mount-power-packages
Powermite 3 devices include 8 Amp Power Schottkys and UltraFast Rectifiers, 500 and 1000 Volt 1 Amp MOSFETs , High Speed Silicon Controlled Rectifiers, and 1500W Zener Diodes. Features: • 10 Amp, 40 V Schottky barrier rectifier • Low 1.1mm profile (max) • 16 … They may be triggered using low power logic drivers (+0.8 V at 200 mA).
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http://dspace.mit.edu/bitstream/handle/1721.1/28415/56986239-MIT.pdf?sequence=2
switch chosen was the Si4490 N-Channel MOSFET . The FET featured a VDS of 200 V … was the UPS840 with an 8A average rectified forward current rating and a 40 V reverse voltage … Then a one volt offset was added to the The amplification stage was built using the LT1810 high-speed op- amp .
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Page 3. Semiconductor parts with 913 in root number
40 V Vcbo, 5.0A Ic Low frequency power silicon NPN transistor -11 AMP -100 VOLTS 0.30 ohm DUAL UNCOMMITED P-Channel Power MOSFET 30A, 200 nsec, 50-400 V Fast Recovery Rectifier .
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Bipolar-MOS and Bipolar IC's Building Blocks for Smoke-Detector Circuits
9- volt operation Diode protected MOSFET inputs. Horn Driver on Chip Sink 200 mA @ Beep repition rate - 40 -70/sec. The bipolar-MOS device used in the circuit shown is the RCA BiMOS op- amp CA3130.
