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Supplier: Richardson RFPD
Description: Radar Power Transistors
- Package Type: Other
- Transistor Type: Power BJT Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Gen Pur SS
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN 40Vcbo 15Vceo 4.5Vebo 10mA 4.0pF
- Transistor Type: Bipolar RF Transistors
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Supplier: Radwell International
Description: STMICRO ELECTRONICS Semiconductors VNP20N07-E
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Supplier: ODG (Origin Data Global)
Description: RF POWER TRANSISTORS
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: RF BIPOLAR TRANSISTOR
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT SS Transistor
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Transistor
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOT-363 Bipolar Transistors - BJT ROHS
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: 20P DIP-20 IC / Transistor Socket ROHS
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOT-223 Bipolar Transistors - BJT ROHS
- Package Type: SOT223
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOT-23 Bipolar Transistors - BJT ROHS
- Package Type: SOT23
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOT-223 Bipolar Transistors - BJT ROHS
- Package Type: SOT223
- Transistor Type: Bipolar RF Transistors
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Supplier: Toshiba America, Inc.
Description: Toshiba offers a wide range of bipolar transistors suitable for various applications, including radio-frequency (RF) and power supply devices. Transistors Bipolar Transistors Bias Resistor Built-in Transistors (BRT) IGBTs IEGT (PPI & PMI) Multi-Chip Discrete
- Transistor Type: General Purpose BJT, Bipolar RF Transistors, IGBT
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Supplier: Utmel Electronic Limited
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Renesas Electronics America Win Source Part Number: 906378-2SC945A-A Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status:
- Package Type: SOT3
- Transistor Type: Bipolar RF Transistors
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Supplier: Northrop Grumman Corporation
Description: WPTB32A0912Ax 960-1215 MHz Bipolar RF Transistor The WPTB32A0912Ax application-specific transistor uses the 3217 L-Band die which was developed for pulsed radar systems. Optimal internal matching delivers high performance for applications such as the MIDS and JTIDS
- Transistor Grade / Operating Range: Military
- Transistor Type: Bipolar RF Transistors
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed avionics transistor part number IB1011M20 is designed for L-Band avionics systems operating at 1030 and 1090 . While operating in class C mode under simple mode S pulse burst conditions at VCC = 50V, this common base device supplies a minimum of 20
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Rochester Electronics
Description: Insulated Gate Bipolar Transistor Module
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Description: TRANSISTOR
- Transistor Type: MOSFET
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) Potential Applications For AF input stages
- Package Type: SOT23, Other
- Polarity: PNP, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: MACOM
Description: At MACOM we offer a broad range of bipolar technology RF power transistor products as discrete devices, modules, and pallets from DC to 3.5 GHz. Our high power bipolar transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and
- Package Type: Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial, Industrial
- Transistor Type: Bipolar RF Transistors
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Supplier: ROHM Semiconductor USA, LLC
Description: Transistor
- Package Type: Other
- Polarity: P-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor
- Package Type: Other
- Polarity: PNP
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Supplier: Acme Chip Technology Co., Limited
Description: NPN TRANSISTOR
- Transistor Type: General Purpose BJT
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Supplier: Nexperia B.V.
Description: NPN medium frequency transistor in a SOT23 plastic package. Features and benefits IC(max) =25 mA VCEO(max) =20 V Very low feedback capacitance (typ. 350 fF). AEC-Q101 qualified Applications IF and VHF thick and thin-film circuit applications.
- Package Type: SOT23, Other
- Polarity: NPN
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Supplier: Win Source Electronics
Description: ): 200 mA Voltage - Collector Emitter Breakdown (Max): 300 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO)
- Package Type: SOT3
- Transistor Type: Bipolar RF Transistors
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Supplier: Twilight Technology Inc.
Description: Twilight Technology, Inc. specializes in IC packaging and testing services focused on providing solutions for high reliability applications or obsolete components. Twilight Technology has manufactured and marketed a variety of standard and proprietary semiconductor packaging
- Transistor Type: Power BJT Transistors
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Description: TRANSISTOR
- Packing Method: Bulk Pack, Other
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Description: TRANSISTOR
- Packing Method: Bulk Pack, Other
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Description: TRANSISTOR
- Packing Method: Bulk Pack, Other
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Supplier: Utmel Electronic Limited
Description: RF Bipolar Transistors NPN High Frequency
- Output Power: 0.7350 watts
- Packing Method: Tape Reel, Other
- Polarity: NPN
- Power Gain: 6.5 dB
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Max Input Capacitance: 50pF @ 10V Maximum Gate-Source Voltage: ±20V Power Dissipation (Max): 260mW (Ta), 830mW (Tc) Maximum Rds On: 1.6 Ohm @ 300mA, 10V Temperature Range (read more)
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. Ideally suited for industrial motor drive applications, including industrial motor drives like servo motors ranging from 5 to 20 kW (20 kHz), robotics, elevators, operating grippers, in-line manufacturing, power inverters (read more)
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The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
In this demo, Nexperia's high power Bipolar Junction Transistors (BJT) are utilized as a high voltage current source in an LED lighting application. The set-up shows the well established discrete solution - a combination of precision shunt (read more)
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The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
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Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
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Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
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The SMMBT3904LT3G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) tailored for general-purpose amplifier applications. With (read more)
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PSUs, the use of GaN devices enables ~0.8–1.2% efficiency improvement at full load compared to silicon, while supporting ~40–70% increases in power density at the stage level, driven by higher switching frequencies and reduced passive component size. In a typical 1 kW high-voltage motor (read more)
Browse Transistors Datasheets for Nexperia B.V. -
The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo