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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20A. Search-friendly keywords include transistor, BJT, switching, amplification, 20A, Bipolar Transistor, Single Bipolar Transistors. This listing
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 850V, 20A. Search-friendly keywords include transistor, BJT, switching, amplification, 850V, 20A, Bipolar Transistor, Single Bipolar Transistors. This listing
- VCEO: 850 volts
- TJ: -65 to 200 C
- Features: Bipolar RF Transistors, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 20A. Search-friendly keywords include transistor, BJT, switching, amplification, 55V, 20A, Bipolar Transistor, Bipolar RF
- IC(max): 20,000 milliamps
- VCEO: 55 volts
- VCBO: 110 volts
- PD: 318,000 milliwatts
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 450V, 20A. Search-friendly keywords include transistor, BJT, switching, amplification, 450V, 20A, Bipolar Transistor, Single Bipolar Transistors. This listing
- VCEO: 450 volts
- TJ: -65 to 200 C
- Features: Bipolar RF Transistors, Other
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Supplier: ODG (Origin Data Global)
Description: 60V 20A 34mΩ@10V,20A 14W 1.5V@250uA 1 N-Channel PDFN5060-8L MOSFETs ROHS
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Supplier: VAST STOCK CO., LIMITED
Description: IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
- Features: IGBT
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, NPN, 20V, 1A, SC-89-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:20V; Continuous Collector Current:1A; Power Dissipation:255mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, NPN, 500V, 20A, TO-3-2; Transistor Polarity:NPN; Collector Emitter Voltage Max:500V; Continuous Collector Current:20A; Power Dissipation:175W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Product Range:- RoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Manufacturer: Fairchild Semiconductor Win Source Part Number: 341645-SSP45N20A Popularity: Low Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, PNP, 20V, 2A, SOT1061; Transistor Polarity:PNP; Collector Emitter Voltage Max:20V; Continuous Collector Current:2A; Power Dissipation:1.65W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, NPN, 20V, 2A, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency ft:150MHz; Power Dissipation Pd:540mW; DC Collector Current:2A; DC Current Gain hFE:200hFE; Transistor Case RoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220SIS Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 20A (Ta) Gate-Source Threshold Voltage: 3.5V @ 1mA Max Gate Charge: 55nC @ 10V Max Input Capacitance: 2550pF @
- V(BR)DSS: 250 volts
- PD: 45,000 milliwatts
- TJ: 150 C
- Features: MOSFET, Other
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, NPN, 60V 20A, TO-3 PKG
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Supplier: Win Source Electronics
Description: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220SIS Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20A (Ta) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 1470pF @ 10V
- V(BR)DSS: 600 volts
- PD: 45,000 milliwatts
- TJ: 150 C
- Features: MOSFET, Other
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Supplier: Nexperia B.V.
Description: NPN medium frequency transistor in a SOT23 plastic package. Features and benefits IC(max) =25 mA VCEO(max) =20 V Very low feedback capacitance (typ. 350 fF). AEC-Q101 qualified Applications IF and VHF thick and thin-film circuit applications.
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Win Source Electronics
Description: Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 840355-TK20A60W5 Categories: Uncategorized Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
- Features: MOSFET
- Package Type: SOT3
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR DARLINGTON NPN 100V 20A, TO-3 PKG
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Supplier: Utmel Electronic Limited
Description: TRANSISTOR NPN 20V 2A SOT1061
- Polarity: NPN
- Features: Other
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Supplier: Lingto Electronic Limited
Description: CONN IC DIP SOCKET 20POS GOLD
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Supplier: Richardson RFPD
Description: Radar Power Transistors
- Power Gain: 8.2 dB
- Output Power: 20 watts
- Operating Frequency: 2,700 to 3,100 MHz
- Features: Other, Power BJT Transistors
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT BIP PNP 5A 20V
- VCEO: 20 volts
- IC(max): 5,000 milliamps
- PD: 1,300 milliwatts
- TJ: 150 C
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Supplier: Infineon Technologies AG
Description: PNP Silicon Switching Transistor Summary of Features Low collector-emitter saturation voltage Complementary type: SMBT2222A / MMBT2222A (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101
- IC(max): 150 to 600 milliamps
- VCEO: 60 volts
- VCBO: 60 volts
- fT: 200 MHz
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 400V 625mW 200mA PNP TO-92-3 Bipolar Transistors - BJT ROHS
- IC(max): 200 milliamps
- VCEO: 400 volts
- fT: 50 MHz
- PD: 625 milliwatts
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Supplier: Nexperia B.V.
Description: NPN medium power transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. PNP complement: BCP69. Features and benefits High current Two current gain selections High power dissipation capability AEC-Q101 qualified Applications Linear voltage regulators Low-side switches
- Features: Other
- Package Type: SOT223
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Description: IGBT MODULE 600V 20A 96W
- Output Power: 96 watts
- Packing Method: Bulk Pack
- Features: IGBT, Other
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) Potential Applications For AF input stages
- IC(max): 100 milliamps
- VCEO: 45 volts
- VCBO: 50 volts
- fT: 250 MHz
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Supplier: Nexperia B.V.
Description: PNP medium power transistor in a Surface-Mounted Device (SMD) plastic package. Features and benefits High current Three current gain selections 1.4 W total power dissipation Medium power SMD plastic package Applications Linear voltage regulators High-side switches Supply line switches MOSFET
- Features: Other
- Package Type: SOT223
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011) Potential Applications For AF input stages
- IC(max): 100 milliamps
- VCEO: 30 volts
- VCBO: 30 volts
- fT: 250 MHz
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Description: MOSFET N-CH 650V 20A TO220AB
- V(BR)DSS: 650 volts
- IDSS: 20,000 milliamps
- Features: MOSFET, Other
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor PNP 60V 600mA 200MHz Surface Mount Die
- Features: Other
- Polarity: PNP
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Supplier: Acme Chip Technology Co., Limited
Description: IXGA20N120A3 TRL
- Output Power: 180 watts
- Features: IGBT, Other
- Packing Method: Tape Reel
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Supplier: RS Components, Ltd.
Description: PNP power transistor,MJ15004,20A BP
- TJ: 200 C
- Number of Transistors in the Chip: 1
- Features: General Purpose BJT, Other
- Polarity: PNP
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Features: IGBT, Other
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm
- VCEO: 50 volts
- IC(max): 100 milliamps
- PD: 150 milliwatts
- TJ: 150 C
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Supplier: Utmel Electronic Limited
Description: Optocoupler - Transistor Output, 4 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, PLASTIC, 11-20A3, DIP-16
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