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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20A. Search-friendly keywords include transistor, BJT, switching, amplification, 20A, Bipolar Transistor, Single Bipolar Transistors. This listing
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 850V, 20A. Search-friendly keywords include transistor, BJT, switching, amplification, 850V, 20A, Bipolar Transistor, Single Bipolar Transistors. This listing
- VCEO: 850 volts
- TJ: -65 to 200 C
- Features: Bipolar RF Transistors, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 450V, 20A. Search-friendly keywords include transistor, BJT, switching, amplification, 450V, 20A, Bipolar Transistor, Single Bipolar Transistors. This listing
- VCEO: 450 volts
- TJ: -65 to 200 C
- Features: Bipolar RF Transistors, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: package options, lifecycle status, and procurement availability. Key searchable attributes include 400V, 20A. Search-friendly keywords include transistor, BJT, switching, amplification, 400V, 20A, Bipolar Transistor, Single Bipolar Transistors. This listing
- VCEO: 400 volts
- TJ: -65 to 200 C
- Features: Bipolar RF Transistors, Other
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Supplier: ODG (Origin Data Global)
Description: 60V 20A 43mΩ@10V,20A 34W 1V@250uA 1 N-Channel TO-252 MOSFETs ROHS
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Supplier: VAST STOCK CO., LIMITED
Description: IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
- Features: IGBT
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, NPN, 20V, 1A, SC-89-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:20V; Continuous Collector Current:1A; Power Dissipation:255mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, NPN, 500V, 20A, TO-3-2; Transistor Polarity:NPN; Collector Emitter Voltage Max:500V; Continuous Collector Current:20A; Power Dissipation:175W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Product Range:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, PNP, 20V, 2A, SOT1061; Transistor Polarity:PNP; Collector Emitter Voltage Max:20V; Continuous Collector Current:2A; Power Dissipation:1.65W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, NPN, 20V, 2A, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency ft:150MHz; Power Dissipation Pd:540mW; DC Collector Current:2A; DC Current Gain hFE:200hFE; Transistor Case RoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Manufacturer: Fairchild Semiconductor Win Source Part Number: 341645-SSP45N20A Popularity: Low Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, NPN, 60V 20A, TO-3 PKG
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Supplier: Win Source Electronics
Description: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220SIS Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 20A (Ta) Gate-Source Threshold Voltage: 3.5V @ 1mA Max Gate Charge: 55nC @ 10V Max Input Capacitance: 2550pF @
- V(BR)DSS: 250 volts
- PD: 45,000 milliwatts
- TJ: 150 C
- Features: MOSFET, Other
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Supplier: Win Source Electronics
Description: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220SIS Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20A (Ta) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 1470pF @ 10V
- V(BR)DSS: 600 volts
- PD: 45,000 milliwatts
- TJ: 150 C
- Features: MOSFET, Other
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Supplier: Nexperia B.V.
Description: NPN medium frequency transistor in a SOT23 plastic package. Features and benefits IC(max) =25 mA VCEO(max) =20 V Very low feedback capacitance (typ. 350 fF). AEC-Q101 qualified Applications IF and VHF thick and thin-film circuit applications.
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR DARLINGTON NPN 100V 20A, TO-3 PKG
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Supplier: Win Source Electronics
Description: Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 840355-TK20A60W5 Categories: Uncategorized Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
- Features: MOSFET
- Package Type: SOT3
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Supplier: Infineon Technologies AG
Description: PNP Silicon Switching Transistor Summary of Features Low collector-emitter saturation voltage Complementary type: SMBT2222A / MMBT2222A (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101
- IC(max): 150 to 600 milliamps
- VCEO: 60 volts
- VCBO: 60 volts
- fT: 200 MHz
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 50V 200mW 200@2mA,6V 150mA PNP SOT-23 Bipolar Transistors - BJT ROHS
- IC(max): 150 milliamps
- VCEO: 50 volts
- fT: 80 MHz
- PD: 200 milliwatts
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Supplier: Utmel Electronic Limited
Description: TRANSISTOR NPN 20V 2A SOT1061
- Polarity: NPN
- Features: Other
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Supplier: Richardson RFPD
Description: Radar Power Transistors
- Power Gain: 7.5 dB
- Output Power: 20 watts
- Operating Frequency: 3,100 to 3,500 MHz
- Features: Other, Power BJT Transistors
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Supplier: Lingto Electronic Limited
Description: CONN IC DIP SOCKET 20POS GOLD
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT BIP PNP 5A 20V
- VCEO: 20 volts
- IC(max): 5,000 milliamps
- PD: 1,300 milliwatts
- TJ: 150 C
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Supplier: Nexperia B.V.
Description: NPN medium power transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. PNP complement: BCP69. Features and benefits High current Two current gain selections High power dissipation capability AEC-Q101 qualified Applications Linear voltage regulators Low-side switches
- Features: Other
- Package Type: SOT223
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011) Potential Applications For AF input stages
- IC(max): 100 milliamps
- VCEO: 30 volts
- VCBO: 30 volts
- fT: 250 MHz
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Description: IGBT MODULE 600V 20A 96W
- Output Power: 96 watts
- Packing Method: Bulk Pack
- Features: IGBT, Other
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) Potential Applications For AF input stages
- IC(max): 100 milliamps
- VCEO: 45 volts
- VCBO: 50 volts
- fT: 250 MHz
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Supplier: RS Components, Ltd.
Description: PNP power transistor,MJ15004,20A BP
- TJ: 200 C
- Number of Transistors in the Chip: 1
- Features: General Purpose BJT, Other
- Polarity: PNP
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Description: MOSFET N-CH 650V 20A TO220AB
- V(BR)DSS: 650 volts
- IDSS: 20,000 milliamps
- Features: MOSFET, Other
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: Acme Chip Technology Co., Limited
Description: IXGA20N120A3 TRL
- Output Power: 180 watts
- Features: IGBT, Other
- Packing Method: Tape Reel
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor PNP 60V 600mA 200MHz Surface Mount Die
- Features: Other
- Polarity: PNP
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm
- VCEO: 50 volts
- IC(max): 100 milliamps
- PD: 150 milliwatts
- TJ: 150 C
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Features: IGBT, Other
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Supplier: Utmel Electronic Limited
Description: Optocoupler - Transistor Output, 4 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, PLASTIC, 11-20A3, DIP-16
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed avionics transistor part number IB1011M20 is designed for L-Band avionics systems operating at 1030 and 1090 . While operating in class C mode under simple mode S pulse burst conditions at VCC = 50V, this common base device supplies a minimum of 20 watts of peak pulse
- Power Gain: 13.8 dB
- Operating Frequency: 1,030 MHz
- Output Power: 20 watts
- Features: Bipolar RF Transistors, Other
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Max Input Capacitance: 50pF @ 10V Maximum Gate-Source Voltage: ±20V Power Dissipation (Max): 260mW (Ta), 830mW (Tc) Maximum Rds On: 1.6 Ohm @ 300mA, 10V Temperature Range (read more)
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. Ideally suited for industrial motor drive applications, including industrial motor drives like servo motors ranging from 5 to 20 kW (20 kHz), robotics, elevators, operating grippers, in-line manufacturing, power inverters (read more)
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The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a (read more)
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In this demo, Nexperia's high power Bipolar Junction Transistors (BJT) are utilized as a high voltage current source in an LED lighting application. The set-up shows the well established discrete solution - a combination of precision shunt (read more)
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The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
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Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
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Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
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The SMMBT3904LT3G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) tailored for general-purpose amplifier applications. With (read more)
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PSUs, the use of GaN devices enables ~0.8–1.2% efficiency improvement at full load compared to silicon, while supporting ~40–70% increases in power density at the stage level, driven by higher switching frequencies and reduced passive component size. In a typical 1 kW high-voltage motor (read more)
Browse Transistors Datasheets for Nexperia B.V. -
The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
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