-
Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, PNP, -24V; Transistor Polarity:PNP; Collector Emitter Voltage Max:24V; Continuous Collector Current:150mA; Power Dissipation:150mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes
-
Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, NPN, 24V; Transistor Polarity:NPN; Collector Emitter Voltage Max:24V; Continuous Collector Current:150mA; Power Dissipation:150mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:-; MSL:-RoHS Compliant: Yes
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 24V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 24V, MOSFET Transistor, FET,
- TJ: -55 C
- Features: MOSFET
-
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 24V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 24V, MOSFET Transistor, Single FETs, MOSFETs.
- V(BR)DSS: 30 volts
- PD: 26,000 milliwatts
- TJ: -55 C
- MOSFET Operating Mode: Enhancement
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8V, 24V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8V, 24V, MOSFET Transistor, Single FETs, MOSFETs. This
- V(BR)DSS: 20 volts
- PD: 2,030 milliwatts
- TJ: -55 to 150 C
- MOSFET Operating Mode: Enhancement
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports
- IC(max): 20 milliamps
- VCEO: 50 volts
- PD: 300 milliwatts
- TJ: -65 C
-
Supplier: ODG (Origin Data Global)
Description: 24P DIP Round Hole -40℃~+105℃ 7.62mm 2.54mm DIP-24 IC / Transistor Socket ROHS
-
Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, PNP, -24V, TO-5; Transistor Polarity:PNP; Collector Emitter Voltage Max:24V; Continuous Collector Current:100mA; Power Dissipation:150mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:-RoHS Compliant: Yes
-
Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOL, PNP, -45V, SOT-23-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:250MHz; Power Dissipation Pd:330mW; DC Collector Current:-100mA; DC Current Gain hFE:420hFE; TransistorRoHS Compliant: Yes
-
Supplier: Win Source Electronics
Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 117872-MPSH24 Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 400MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C
- Polarity: NPN
- Features: Other
- Package Type: SOT3, TO-92
-
Supplier: Infineon Technologies AG
Description: NPN Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary type: BFN27 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101
- IC(max): 200 milliamps
- VCEO: 250 volts
- VCBO: 250 volts
- fT: 70 MHz
-
Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT 40V 300mW
- Features: Bipolar RF Transistors
-
Supplier: Win Source Electronics
Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1051066-KST24MTF Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 620MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SOT-23-3 Maximum Current
- Polarity: NPN
- Features: Other
- Package Type: SOT23, SOT3
-
Supplier: VAST STOCK CO., LIMITED
Description: IGBT Transistors 24 Amps 1200 V 3.3 V Rds
- Features: IGBT
-
Supplier: Win Source Electronics
Description: Manufacturer: Nexperia USA Inc. Win Source Part Number: 210363-PUMD24 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 100k Resistor - Emitter Base (R2) (Ohms): 100k Categories: Discrete Semiconductor Products Status:
- Polarity: NPN, PNP
- Features: Other
- Package Type: SOT3
-
Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Features: IGBT, Other
-
Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Win Source Part Number: 61472-IRLIZ24N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 26W (Tc) Family Name: IRLIZ24 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On):
- V(BR)DSS: 55 volts
- PD: 26,000 milliwatts
- TJ: -55 to 175 C
- Features: MOSFET, Other
-
Supplier: LCSC Electronics Technology (HK) Limited
Description: 20V 200mW 820@10mA,3V 500mA NPN TO-236-3(SOT-23-3) Bipolar Transistors - BJT ROHS
- IC(max): 500 milliamps
- VCEO: 20 volts
- fT: 350 MHz
- PD: 200 milliwatts
-
Supplier: Nexperia B.V.
Description: PNP low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4032NT-Q Features and benefits Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE)
- Features: Other
- Package Type: SOT23
-
Supplier: DigiKey
Description: Bipolar (BJT) Transistor PNP 45V 6A 50W Through Hole TO-220-3
- Features: Other
- Polarity: PNP
- Package Type: TO-220
-
Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT PNP HighV 500V
- VCEO: 500 volts
- IC(max): 150 milliamps
- PD: 500 milliwatts
- TJ: -55 to 150 C
-
Supplier: Allied Electronics, Inc.
Description: Transistor; SS T092 RF Transistor NPN 160V -Lead Free
-
Description: Integrated Circuits (ICs) - Transistors - Bipolar Transistors - BJT
- TJ: -55 to 150 C
- Features: General Purpose BJT
-
Description: Integrated Circuits (ICs) - Transistors - Pre-ordered transistors
-
Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Output Power: 80 watts
- Power Gain: 13 dB
- Operating Frequency: 2 to 175 MHz
- Features: MOSFET RF Transistors
-
Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, PNP 100V 6A
-
Supplier: Allied Electronics, Inc.
Description: Small Signal Transistor, PNP Transistor Type, -60 V Collector to Emitter Voltage +175 °C maximum operating temperature Designed for high speed saturated switching and general purpose applications.
-
Supplier: Allied Electronics, Inc.
Description: To meet the demand for applications that require more flexibility than a simple relay, timer or counter, but are too small or simple for the smallest Nano PLC, the new generation of Zelio Logic smart relays are now available. Designed to accept and control outputs just like a relay, Zelio Logic
-
Supplier: VAST STOCK CO., LIMITED
Description: Transistor Output Optocouplers Optocoupled Isolator
-
Supplier: DigiKey
Description: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 20mA 300mW Surface Mount 6-TSSOP
- Transistor Grade / Operating Range: Automotive
- Features: Other
- Polarity: PNP
-
Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT H-Bridge-70V
- VCEO: 70 volts
- IC(max): 1,000 milliamps
- PD: 2,000 milliwatts
- TJ: -55 to 150 C
-
Supplier: LCSC Electronics Technology (HK) Limited
Description: SOIC-16 Darlington Transistor Arrays ROHS
- Features: Darlington
-
Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT H-Bridge-40V
- VCEO: 40 volts
- IC(max): 2,000 milliamps
- PD: 2,000 milliwatts
- TJ: -55 to 150 C
-
Supplier: Utmel Electronic Limited
Description: Darlington Transistors 50A 60V Bipolar Power NPN
- IC(max): 50,000 milliamps
- VCEO: 60 volts
- PD: 300 milliwatts
- TJ: -55 to 200 C
-
Supplier: Acme Chip Technology Co., Limited
Description: OPTOISOLTR 5KV TRANSISTOR 8-DIP
- TJ: -55 to 100 C
- Features: Other
- Packing Method: Shipping Tube / Stick Magazine
Find Suppliers by Category Top
Featured Products Top
-
Extending our range of high-power product choice, Nexperia launches our new IGBT's in 600 V (read more)
Browse Transistors Datasheets for Nexperia B.V. -
Nexperia announced the expanded portfolio of 650 V industrial-grade high-power GaN FETs for demanding power conversion applications. The portfolio includes devices in 35 mΩ, 50 mΩ and 70 mΩ, offered in industry-standard TO-247-3, TO-247-4, TOLL and TOLT packages. The extended (read more)
Browse Transistors Datasheets for Nexperia B.V. -
Explore the features and specifications of the BSS138PW,115 N-channel MOSFET from Nexperia USA Inc. This MOSFET is designed for a wide range of electronic applications, offering a balanced supply and demand status and medium popularity. With a drain-source breakdown voltage of 60V and a (read more)
Browse Transistors Datasheets for Win Source Electronics -
a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide (read more)
Browse Transistors Datasheets for Win Source Electronics -
Nexperia extend the 650 V IGBT portfolio with the release of 15 & 30 A discrete IGBTs in TO220-FP & D2PAK packages. Based on Nexperia’s third-generation technology with carrier stored trench-gate and field-stop (FS) structures, these devices offer optimized (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Nexperia B.V. -
Rated AC Voltage 0~380V AC Rated DC Voltage 0~540V DC Structural Design Partition wiring, multi-layer shielded (read more)
Browse RF Transistors Datasheets for JiuJiang Ingiant Technology Co., Ltd. -
collector-emitter breakdown voltage of 60V. With a low saturation voltage of 1.6V at 50mA to 500mA and a minimum DC current gain (hFE) of 100 at 150mA and 10V, this transistor offers efficient switching and amplification capabilities. The 2N2907AUB is RoHS compliant (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
Browse Transistors Datasheets for Win Source Electronics -
Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
Browse Transistors Datasheets for Win Source Electronics -
and a smaller form factor while maintaining the system's low cost. With several product families, such as the CoolGaN Transistors 650 V G5, CoolGaN Transistors 700 V G5, CoolGaN Transistor Dual 650 V G5, and CoolGaN Drive HB 600 V G5, these power devices deliver the highest efficiency with high (read more)
Browse Transistors Datasheets for DigiKey