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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Category: Transistors Series: BFR181 Transistor Type: Bipolar Technology: Si Transistor Polarity: NPN Package / Case: SOT-323 Packaging: Reel Mounting Style: SMD/SMT Emitter Base Voltage (VEBO): 2 V
- Package Type: SOT3
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN BIPOLAR
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT PNP BIPOLAR
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT 200mA 40V
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT 60V 200mW
- Transistor Type: Bipolar RF Transistors
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Supplier: Radwell International
Description: RENESAS Semiconductors UPC24M15AHF
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Supplier: Radwell International
Description: NEC Semiconductors UPC24A15HF-AZ
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Supplier: Radwell International
Description: IXYS Semiconductors IXGH24N60AU1
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Supplier: ODG (Origin Data Global)
Description: 24P DIP-24 IC / Transistor Socket ROHS
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Supplier: Infineon Technologies AG
Description: NPN Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary type: BFN27 (PNP) Pb
- Package Type: SOT23, Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: 24P DIP Round Hole -40?~+105? 7.62mm 2.54mm DIP-24 IC / Transistor Socket ROHS
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Supplier: ODG (Origin Data Global)
Description: RF TRANS NPN 30V 400MHZ SOT23-3
- Package Type: SOT23, Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: M/A-Com Technology Solutions Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1229447-UF28100V Drain to Source Voltage (Vdss): 65 V Frequency: 500 MHz Number of Elements: 1 Gain: 10 dB Number of Pins: 8
- Package Type: SOT3
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: ODG (Origin Data Global)
Description: DIP-24 IC / Transistor Socket ROHS
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Package Type: Other
- Transistor Type: MOSFET RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 250V 80@8A,5V 16A PNP TO-264 Bipolar Transistors - BJT ROHS
- Polarity: PNP
- Transistor Type: Bipolar RF Transistors
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Supplier: ROHM Semiconductor USA, LLC
Description: Transistor
- Transistor Grade / Operating Range: Commercial
- Transistor Type: MOSFET
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Supplier: Utmel Electronic Limited
Description: RF Bipolar Transistors VCEO=-150V IC=-600mA
- Polarity: PNP, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Rochester Electronics
Description: Small Signal Bipolar Transistor, SOT6
- Package Type: Other
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C
- Package Type: Other
- Polarity: NPN
- Transistor Type: Power BJT Transistors
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Description: Integrated Circuits (ICs) - Transistors - Pre-ordered transistors
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor PNP 60V 6A 50W Through Hole TO-220-3
- Package Type: TO-220, Other
- Polarity: PNP
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 500W @ 12us/3%/50V ¦ 2.856GHz Operating Frequency ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required ¦ Specified For
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Acme Chip Technology Co., Limited
Description: NPN POWER TRANSISTOR
- Transistor Type: General Purpose BJT
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Supplier: Rochester Electronics
Description: RF Small Signal Bipolar Transistor, 0.1A, Very High Frequency Band, NPN
- Package Type: Other
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Supplier: Infineon Technologies AG
Description: HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor High gain low noise RF transistor High maximum stable gain: Gms 24dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz Noise figure F = 1.1 dB at 6
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Broadcom Inc.
Description: Microcurrent device offering good RF performance at 1mA-20mA. The AT-320XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1dB, Gain=14dB at 3V, 2mA; P1dB= 13dBm at 3V, 20mA (all at 900 MHz)
- Package Type: Other
- Polarity: NPN, Other
- Transistor Grade / Operating Range: Other
- Transistor Type: Bipolar RF Transistors
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Description: Integrated Circuits (ICs) - Transistors - Bipolar Transistors - BJT
- TJ: -55 to 150 C
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Supplier: LCSC Electronics Technology (HK) Limited
Description: QSOP-24 Darlington Transistor Arrays ROHS
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
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Supplier: DigiKey
Description: PLC 10DI, 6TO & 24VDC RTC AND
- Input: Other Input
- Mounting: DIN Rail
- Number of Inputs: 10
- Number of Outputs: 6
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Supplier: ROHM Semiconductor GmbH
Description: PNP -3.0A -30V Middle Power Transistor
- Package Type: Other
- Polarity: PNP
- Transistor Grade / Operating Range: Commercial
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Supplier: Win Source Electronics
Description: Manufacturer: Nexperia USA Inc. Win Source Part Number: 791389-PBSS4160V,115 Packaging: Reel package Operating Temperature Range: 150°C (TJ) Package: SOT-563, SOT-666 Mounting: SMD Power - Max: 500mW Transistor Type: NPN Frequency - Transition: 220MHz
- IC(max): 1.00E-4 milliamps
- Package Type: SOT3
- Packing Method: Tape Reel, Other
- Polarity: NPN
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Supplier: Solid State Devices, Inc.
Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This
- Package Type: TO-3, Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Galco Industrial Electronics
Description: SKiiP 24AC126V1
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Extending our range of high-power product choice, Nexperia launches our new IGBT's in 600 V (read more)
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Explore the features and specifications of the BSS138PW,115 N-channel MOSFET from Nexperia USA Inc. This MOSFET is designed for a wide range of electronic applications, offering a balanced supply and demand status and medium popularity. With a drain-source breakdown voltage of 60V and a (read more)
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a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide (read more)
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Nexperia extend the 650 V IGBT portfolio with the release of 15 & 30 A discrete IGBTs in TO220-FP & D2PAK packages. Based on Nexperia’s third-generation technology with carrier stored trench-gate and field-stop (FS) structures, these devices offer optimized (read more)
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collector-emitter breakdown voltage of 60V. With a low saturation voltage of 1.6V at 50mA to 500mA and a minimum DC current gain (hFE) of 100 at 150mA and 10V, this transistor offers efficient switching and amplification capabilities. The 2N2907AUB is RoHS compliant (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
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Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
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The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
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The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
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