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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Category: Transistors Series: BFR181 Transistor Type: Bipolar Technology: Si Transistor Polarity: NPN Package / Case: SOT-323 Packaging: Reel Mounting Style: SMD/SMT Emitter Base Voltage (VEBO): 2 V
- Package Type: SOT3
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Transistor
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT 15A, 60V PNP Power Transistor
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT BJTs
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT . .
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: NPN RF TRANSISTOR
- Transistor Type: Bipolar RF Transistors
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Supplier: Radwell International
Description: HITACHI Semiconductors T2SB649A
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Supplier: Radwell International
Description: FAIRCHILD SEMICONDUCTOR Semiconductors 2N3859A
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Supplier: ODG (Origin Data Global)
Description: RF BIPOLAR TRANSISTOR
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOT-363 Bipolar Transistors - BJT ROHS
- Transistor Type: Bipolar RF Transistors
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Supplier: Richardson RFPD
Description: Radar Power Transistors
- Package Type: Other
- Transistor Type: Power BJT Transistors
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Supplier: Toshiba America, Inc.
Description: Toshiba offers a wide range of bipolar transistors suitable for various applications, including radio-frequency (RF) and power supply devices. Transistors Bipolar Transistors Bias Resistor Built-in Transistors (BRT) IGBTs IEGT (PPI & PMI) Multi-Chip Discrete
- Transistor Type: General Purpose BJT, Bipolar RF Transistors, IGBT
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Supplier: Utmel Electronic Limited
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Northrop Grumman Corporation
Description: WPTB32A0912Ax 960-1215 MHz Bipolar RF Transistor The WPTB32A0912Ax application-specific transistor uses the 3217 L-Band die which was developed for pulsed radar systems. Optimal internal matching delivers high performance for applications such as the MIDS and JTIDS
- Transistor Grade / Operating Range: Military
- Transistor Type: Bipolar RF Transistors
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Description: TRANSISTOR
- Transistor Type: MOSFET
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Supplier: Rochester Electronics
Description: Small Signal Bipolar Transistor
- Package Type: TO-92, Other
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Supplier: Acme Chip Technology Co., Limited
Description: TRANSISTOR
- Transistor Type: General Purpose BJT
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) Potential Applications For AF input stages
- Package Type: SOT23, Other
- Polarity: PNP, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C
- Package Type: Other
- Polarity: NPN
- Transistor Type: Power BJT Transistors
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Supplier: ROHM Semiconductor USA, LLC
Description: Transistor
- Transistor Grade / Operating Range: Commercial
- Transistor Type: MOSFET
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Supplier: MACOM
Description: At MACOM we offer a broad range of bipolar technology RF power transistor products as discrete devices, modules, and pallets from DC to 3.5 GHz. Our high power bipolar transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and
- Package Type: Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial, Industrial
- Transistor Type: Bipolar RF Transistors
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Supplier: Semicoa
Description: SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also available
- Package Type: Other
- Polarity: PNP
- Transistor Grade / Operating Range: Military
- Transistor Type: General Purpose BJT
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed transistor part number IB3000S200 is designed to operate in class C mode. This common base device supplies a minimum of 200 watts of peak pulse power under the conditions of 12ìs pulse width and 1% duty cycle. All devices are 100% screened for large signal RF
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: RF Bipolar Transistors NPN High Frequency
- Output Power: 0.7350 watts
- Packing Method: Tape Reel, Other
- Polarity: NPN
- Power Gain: 6.5 dB
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor
- Package Type: Other
- Polarity: PNP
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Description: TRANSISTOR
- Packing Method: Bulk Pack, Other
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and
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Supplier: Rochester Electronics
Description: Small Signal Bipolar Transistor, 0.1A, 50V, NPN
- Package Type: Other
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Supplier: PUI - Projections Unlimited, Inc.
Description: NPN Transistors, Best Suited For Low Noise VHF And VHF Amplifier Mixer and Oscillator Applications.
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Operating Frequency: 500 to 1000 MHz
- Output Power: 5 watts
- Package Type: Other
- Power Gain: 10 dB
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Supplier: Twilight Technology Inc.
Description: Twilight Technology, Inc. specializes in IC packaging and testing services focused on providing solutions for high reliability applications or obsolete components. Twilight Technology has manufactured and marketed a variety of standard and proprietary semiconductor packaging
- Transistor Type: Power BJT Transistors
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Supplier: ODG (Origin Data Global)
Description: NPN TRANSISTOR
- IC(max): 35 milliamps
- Noise Figure: 1.8 dB
- Operating Frequency: 10000 MHz
- Output Power: 0.2000 watts
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Supplier: PANJIT SemiConductor
Description: Small signal bipolar junction transistor
- Package Type: Other
- Polarity: PNP
- Transistor Type: General Purpose BJT
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In this demo, Nexperia's high power Bipolar Junction Transistors (BJT) are utilized as a high voltage current source in an LED lighting application. The set-up shows the well established discrete solution - a combination of precision shunt (read more)
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The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
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Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
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The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
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The Microchip 2N2907AUB is a high-performance PNP bipolar transistor offering excellent flexibility for multiple electronic applications. With its robust 600mA collector current capacity and a collector-emitter voltage (VCEO) of 60V, this component is designed to (read more)
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