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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2A. Search-friendly keywords include transistor, BJT, switching, amplification, 2A, Bipolar Transistor, Single Bipolar
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 2A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 2A, Bipolar Transistor, Single Bipolar Transistors. This listing supports
- IC(max): 2,000 milliamps
- VCEO: 50 volts
- PD: 1,000 milliwatts
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 180V, 2A. Search-friendly keywords include transistor, BJT, switching, amplification, 180V, 2A, Bipolar Transistor, Single Bipolar Transistors. This
- IC(max): 2,000 milliamps
- VCEO: 180 volts
- VCBO: 180 volts
- PD: 20,000 milliwatts
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.2A. Search-friendly keywords include transistor, BJT, switching, amplification, 0.2A, Bipolar Transistor, Bipolar RF
- Features: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Renesas Electronics America Win Source Part Number: 906378-2SC945A-A Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance
- Features: Bipolar RF Transistors
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Renesas Electronics America Win Source Part Number: 906305-2SA1610-T2-A Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 85 pct. Supply and Demand Status: Balance
- Features: Bipolar RF Transistors
- Package Type: SOT3
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT 3.0A 25W 90Vcbo 80Vceo 2.0V 3.0A
- Features: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 30V 750mW 340@500mA,2V 5A NPN SOT-89 Bipolar Transistors - BJT ROHS
- IC(max): 5,000 milliamps
- VCEO: 30 volts
- fT: 150 MHz
- PD: 750 milliwatts
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Supplier: Win Source Electronics
Description: Manufacturer: Microsemi Corporation Win Source Part Number: 1124256-2N706A Categories: Discrete Semiconductor Products Manufacturer Homepage: www.semelab.co.uk Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1
- Features: Bipolar RF Transistors
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Panasonic Electronic Components Win Source Part Number: 075541-2SD1264A Packaging: Bulk Mounting: Through Hole Frequency - Transition: 20MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case
- Polarity: NPN
- Features: Other
- Package Type: SOT3, TO-220
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Supplier: ODG (Origin Data Global)
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
- IC(max): 100 milliamps
- VCEO: 3.3 volts
- Power Gain: 14 dB
- Noise Figure: 1.2 dB
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Supplier: ODG (Origin Data Global)
Description: 20V 5.2A 1.25W 22mΩ 700mV 1 N-Channel SOT-23 MOSFETs ROHS
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Supplier: Newark, An Avnet Company
Description: MOSFET, DUAL, NN, 30V, 2A; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2A; On Resistance Rds(on):0.154ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; No. of Pins:5Pins RoHS Compliant: Yes
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Supplier: Allied Electronics, Inc.
Description: Transistor; Power; NPN; 2.2A; TO-3
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, NPN, 50V, 2A, TO-252; Transistor Polarity:NPN; Collector Emitter Voltage Max:50V; Continuous Collector Current:2A; Power Dissipation:1.68W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Product Range:- RoHS Compliant: Yes
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Description: Integrated Circuits (ICs) - Transistors - Bipolar Transistors - BJT
- Features: General Purpose BJT
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Description: Integrated Circuits (ICs) - Transistors - Pre-ordered transistors
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Supplier: New Yorker Electronics Co., Inc.
Description: Transistor, NPN, 50V, 0.8A, TO-39
- VCEO: 50 volts
- IC(max): 800 milliamps
- Packing Method: Bulk Pack
- Features: General Purpose BJT, Other
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Features: Power BJT Transistors
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Supplier: New Yorker Electronics Co., Inc.
Description: Transistor, PNP, -60V, -0.60A, TO-18
- VCEO: -60 volts
- IC(max): -600 milliamps
- Packing Method: Bulk Pack
- Features: General Purpose BJT, Other
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, NPN DARL 100V 2A
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Supplier: Semicoa
Description: SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also available
- hfe: 120
- VCEO: 80 volts
- VCBO: 120 volts
- IC(max): 500 milliamps
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, NPN, 500V, 20A, TO-3-2; Transistor Polarity:NPN; Collector Emitter Voltage Max:500V; Continuous Collector Current:20A; Power Dissipation:175W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Product Range:- RoHS Compliant: Yes
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Supplier: ROHM Semiconductor GmbH
Description: 2SCR574D3 is a power transistor with Low VCE(sat), suitable for low frequency amplifier.
- PD: 10,000 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: NPN, Other, Power MOSFET
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, PNP, 80V, 10A, TO-3-2; Transistor Polarity:PNP; Collector Emitter Voltage Max:80V; Continuous Collector Current:10A; Power Dissipation:150W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Product Range:- RoHS Compliant: Yes
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN 800V 3A 10MHz 2W Through Hole TO-220F-A1
- Polarity: NPN
- Features: Other
- Package Type: TO-220
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Supplier: ROHM Semiconductor GmbH
Description: 2SAR574D3 is a power transistor with Low VCE(sat), suitable for low frequency amplifier.
- PD: 10,000 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, PNP, Power MOSFET
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 100MHz 600mW Through Hole TO-78-6
- Features: Other
- Polarity: PNP
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Supplier: Infineon Technologies AG
Description: PNP Silicon Switching Transistor Summary of Features Low collector-emitter saturation voltage Complementary type: SMBT2222A / MMBT2222A (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101
- IC(max): 150 to 600 milliamps
- VCEO: 60 volts
- VCBO: 60 volts
- fT: 200 MHz
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Supplier: PUI - Projections Unlimited, Inc.
Description: Switching and Linear Application DC And VHF Amplifier Applications
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Supplier: VAST STOCK CO., LIMITED
Description: Transistor Output Optocouplers RECOMMENDED ALT 78-VO617A-2
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Supplier: Utmel Electronic Limited
Description: RF Bipolar Transistors NPN High Frequency
- IC(max): 500 milliamps
- VCEO: 5 volts
- Power Gain: 6.5 dB
- PD: 735 milliwatts
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Supplier: Nexperia B.V.
Description: NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BSR20A Features and benefits Low current (max. 300 mA) High voltage (max. 160 V) Applications General purpose switching and amplification Especially used for telephony applications
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Nexperia B.V.
Description: NPN Darlington transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: BCV26 Features and benefits Medium current of 500 mA Low voltage of 60 V High DC current gain of minimum 2000 Applications Preamplifier input amplification
- hfe: 10,000
- IC(max): 500 milliamps
- PD: 250 milliwatts
- Features: Darlington, Other
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Supplier: RS Components, Ltd.
Description: PNP power transistor,MJ15004,20A BP
- TJ: 200 C
- Number of Transistors in the Chip: 1
- Features: General Purpose BJT, Other
- Polarity: PNP
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