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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 30A. Search-friendly keywords include transistor, BJT, switching, amplification, 55V, 30A, Bipolar Transistor, Bipolar RF Transistors. This
- IC(max): 30,000 milliamps
- VCEO: 55 volts
- PD: 375,000 milliwatts
- TJ: -65 C
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 30A. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 30A, Bipolar Transistor, Single Bipolar Transistors. This listing
- VCEO: 100 volts
- Features: Bipolar RF Transistors, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 120V, 30A. Search-friendly keywords include transistor, BJT, switching, amplification, 120V, 30A, Bipolar Transistor, Single Bipolar Transistors. This listing
- VCEO: 120 volts
- TJ: -65 to 200 C
- Features: Bipolar RF Transistors, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 30A, MOSFET Transistor, Single FETs,
- V(BR)DSS: 30 volts
- PD: 27,000 milliwatts
- TJ: -55 to 175 C
- MOSFET Operating Mode: Enhancement
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT . .
- Features: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 197615-30A02CH Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 520MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 3-CPH
- Features: Other
- Polarity: PNP
- Package Type: SOT3
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Supplier: Newark, An Avnet Company
Description: MOSFET TRANSISTOR, PCHANNEL,30.3 A, 30 V; Transistor Polarity:N Channel; Continuous Drain Current Id:-30.3A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0115ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; RoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 094545-30A02CH-TL Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 520MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 3-CPH
- Features: Other
- Polarity: PNP
- Package Type: SOT3
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RF Transistors - TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK7505-30A -- 1156092-BUK7505-30ASupplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 1156092-BUK7505-30A Manufacturer Homepage: www.nxp.com Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Sufficient
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 11 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): IRLR7821TRPBF; BUK6213-30A; BUK6213-30C,118; BUK9213-30A; Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance
- V(BR)DSS: 30 volts
- PD: 150,000 milliwatts
- TJ: -55 to 175 C
- Features: MOSFET, Other
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Supplier: ODG (Origin Data Global)
Description: 150V 30A 40mΩ@10V,10A 81W 4V@250uA 1 N-Channel TO-263 MOSFETs ROHS
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, PNP 30A 100V; Transistor Polarity:P Channel; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:2MHz; Power Dissipation Pd:200W; DC Collector Current:30A; DC Current Gain hFE:100hFE; Transistor Case RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: MOSFET, DUAL N-CH, 30V, 30A, POWERPAIR; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00593ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; RoHS Compliant: Yes
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Supplier: ODG (Origin Data Global)
Description: TRANS PNP 30V 0.7A 3CPH
- IC(max): 699.9999999999999 milliamps
- VCEO: 30 volts
- Operating Frequency: 520 MHz
- Output Power: 0.7 watts
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor PNP 60V 1A 3MHz 30W Through Hole TO-220AB
- Features: Other
- Polarity: PNP
- Package Type: TO-220
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Description: TRANSISTOR >30MHZ
- V(BR)DSS: 30 volts
- IDSS: 55,000 milliamps
- Packing Method: Bulk Pack
- Features: MOSFET, Other
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 30V 90A 5mΩ@30A,10V 105W 2.5V@250uA null TO-252-2 MOSFETs ROHS
- V(BR)DSS: 30 volts
- VGS(off): 2.5 volts
- rDS(on): 0.005 ohms
- PD: 105,000 milliwatts
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Supplier: Nexperia B.V.
Description: 30 V, 100 mA PNP general purpose transistor
- hfe: 420 to 800
- VCEO: 30 volts
- IC(max): 100 milliamps
- PD: 200 milliwatts
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 30V 300mW 50@1mA,10V 500mA NPN+PNP SSOT-6 Bipolar Transistors - BJT ROHS
- IC(max): 500 milliamps
- VCEO: 30 volts
- fT: 250 MHz
- PD: 300 milliwatts
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT 500mA 30V PNP
- VCEO: 25 volts
- IC(max): 500 milliamps
- PD: 300 milliwatts
- TJ: -55 to 150 C
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Supplier: ROHM Semiconductor GmbH
Description: BSS513A0 is a SOT-23 package Transistor for low frequency amplifier.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
- Package Type: SOT23
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed transistor part number IB2856S30 is designed to operate in class C mode. This common base device supplies a minimum of 30 watts of peak pulse power under the conditions of 12ìs pulse width and 3% duty cycle. All devices are 100% screened for large signal RF parameters.
- Power Gain: 9.8 dB
- Operating Frequency: 2,856 MHz
- Output Power: 30 watts
- Features: Bipolar RF Transistors, Other
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Supplier: ROHM Semiconductor GmbH
Description: BSS4130A is a SOT-23 package Transistor for low frequency amplifier, driver.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Infineon Technologies AG
Description: PNP Silicon Switching Transistor Summary of Features Low collector-emitter saturation voltage Complementary type: SMBT2222A / MMBT2222A (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101
- IC(max): 150 to 600 milliamps
- VCEO: 60 volts
- VCBO: 60 volts
- fT: 200 MHz
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Description: TRANS PNP 60V 1A TO220
- VCEO: 60 volts
- IC(max): 1,000 milliamps
- Features: General Purpose BJT, Other
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) Potential Applications For AF input stages
- IC(max): 100 milliamps
- VCEO: 45 volts
- VCBO: 50 volts
- fT: 250 MHz
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011) Potential Applications For AF input stages
- IC(max): 100 milliamps
- VCEO: 30 volts
- VCBO: 30 volts
- fT: 250 MHz
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN SILICON 30V 0.05A TO-106RF/IF AMP
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Supplier: ROHM Semiconductor USA, LLC
Description: Middle power transistor 2SCR542F3 is suitable for Motor driver and LED driver, Power supply.
- V(BR)DSS: 30 volts
- IDSS: 3,000 milliamps
- PD: 1,000 milliwatts
- TJ: -55 to 150 C
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Supplier: Acme Chip Technology Co., Limited
Description: MOSFET N-CH 30V 75A D2PAK
- V(BR)DSS: 30 volts
- IDSS: 75,000 milliamps
- Features: MOSFET, Other
- Packing Method: Tape Reel
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistor, -30V, -2A, Low VCE(sat), PNP Single CPH3
- IC(max): 2,000 milliamps
- VCEO: 30 volts
- PD: 900 milliwatts
- Output Power: 0.9 watts
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Supplier: ROHM Semiconductor GmbH
Description: PNP -3.0A -30V Middle Power Transistor
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
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Supplier: Integra Technologies, Inc.
Description: Part number ILT2731M30 is a high power transistor which is internally matched to 50 ohms. It is designed for S-Band radar systems and operates over the instantaneous bandwidth of 2.7-3.1 GHz. It utilizes gold metal LDMOS transistor technology operating in common source configuration.
- Power Gain: 11.5 dB
- Operating Frequency: 2,700 to 3,100 MHz
- Output Power: 30 watts
- Features: Bipolar RF Transistors, Other
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Supplier: ROHM Semiconductor USA, LLC
Description: 2SAR502EBHZG is a bipolar transistor with large collector current, suitable for low frequency amplifier. It is a highly reliable product for automotive.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistor, (-)30V, (-)3A, Low VCE(sat), (PNP)NPN Single MCPH3
- IC(max): 3,000 milliamps
- VCEO: 30 volts
- PD: 800 milliwatts
- Output Power: 0.8 watts
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