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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT . .
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT PNP Gen Pur
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT BIP PNP 0.7A 30V
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT 1A 100V 30W PNP
- Transistor Type: Bipolar RF Transistors
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed transistor part number IB2856S30 is designed to operate in class C mode. This common base device supplies a minimum of 30 watts of peak pulse power under the conditions of 12ìs pulse width and 3% duty cycle. All devices are 100% screened for large
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: RF BIPOLAR TRANSISTOR
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOT-363 Bipolar Transistors - BJT ROHS
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOT-223 Bipolar Transistors - BJT ROHS
- Package Type: SOT223
- Transistor Type: Bipolar RF Transistors
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Supplier: Toshiba America, Inc.
Description: Toshiba offers a wide range of bipolar transistors suitable for various applications, including radio-frequency (RF) and power supply devices. Transistors Bipolar Transistors Bias Resistor Built-in Transistors (BRT) IGBTs IEGT (PPI & PMI) Multi-Chip Discrete
- Transistor Type: General Purpose BJT, Bipolar RF Transistors, IGBT
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT 500mA 30V PNP
- Polarity: PNP, Other
- Transistor Type: General Purpose BJT, Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Renesas Electronics America Win Source Part Number: 906378-2SC945A-A Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand
- Package Type: SOT3
- Transistor Type: Bipolar RF Transistors
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Supplier: Rochester Electronics
Description: Insulated Gate Bipolar Transistor
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Northrop Grumman Corporation
Description: WPTB32A0912Ax 960-1215 MHz Bipolar RF Transistor The WPTB32A0912Ax application-specific transistor uses the 3217 L-Band die which was developed for pulsed radar systems. Optimal internal matching delivers high performance for applications such as the MIDS and JTIDS
- Transistor Grade / Operating Range: Military
- Transistor Type: Bipolar RF Transistors
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Supplier: Richardson RFPD
Description: Designed primarily for high voltage applications as a high power linear amplifiers from 2 to 30 MHz. Ideal for marine and base station equipment.
- Package Type: Other
- Transistor Type: Power BJT Transistors
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Description: TRANSISTOR >30MHZ
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) Potential Applications For AF input
- Package Type: SOT23, Other
- Polarity: PNP, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor PNP 30V 700mA 520MHz 600mW Surface Mount 3-MCPH
- Package Type: SOT323, Other
- Polarity: PNP
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Supplier: Nexperia B.V.
Description: PNP transistor in a SOT23 plastic package. NPN complements: BCW31 and BCW32. Features and benefits Low current (max. 100 mA) Low voltage (max. 32 V). AEC-Q101 qualified Applications General purpose switching and amplification.
- Package Type: SOT23, Other
- Transistor Type: General Purpose BJT
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Supplier: ROHM Semiconductor GmbH
Description: PNP -3.0A -30V Middle Power Transistor
- Package Type: Other
- Polarity: PNP
- Transistor Grade / Operating Range: Commercial
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Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 1152421-BCW30 Manufacturer Homepage: www.nxp.com Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Sufficient
- Package Type: SOT3
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Supplier: Richardson RFPD
Description: Designed primarily for wideband large-signal output and driver stages from 30-200 MHz
- Operating Frequency: 30 to 200 MHz
- Output Power: 45 watts
- Package Type: Other
- Power Gain: 17 dB
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Supplier: MACOM
Description: At MACOM we offer a broad range of bipolar technology RF power transistor products as discrete devices, modules, and pallets from DC to 3.5 GHz. Our high power bipolar transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and
- Package Type: Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial, Industrial
- Transistor Type: Bipolar RF Transistors
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Supplier: ROHM Semiconductor USA, LLC
Description: Transistor
- Package Type: Other
- Polarity: N-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: Acme Chip Technology Co., Limited
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
- Transistor Type: General Purpose BJT
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Supplier: Rochester Electronics
Description: Bipolar Transistor, -30V, -0.7A, Low VCE(sat), PNP Single CPH3
- Package Type: Other
- Packing Method: Tape Reel, Other
- Polarity: PNP
- Transistor Type: Bipolar RF Transistors
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Supplier: Twilight Technology Inc.
Description: Twilight Technology, Inc. specializes in IC packaging and testing services focused on providing solutions for high reliability applications or obsolete components. Twilight Technology has manufactured and marketed a variety of standard and proprietary semiconductor packaging
- Transistor Type: Power BJT Transistors
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: Trans MOSFET N-CH 200V 21A 3-Pin(3+Tab) TO-220
- Polarity: N-Channel
- Transistor Type: MOSFET
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Description: TRANSISTOR
- Packing Method: Bulk Pack, Other
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Description: TRANSISTOR
- Packing Method: Bulk Pack, Other
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Supplier: Utmel Electronic Limited
Description: RF Bipolar Transistors NPN High Frequency
- Output Power: 0.7350 watts
- Packing Method: Tape Reel, Other
- Polarity: NPN
- Power Gain: 6.5 dB
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Supplier: Win Source Electronics
Description: Manufacturer: Vishay Semiconductor Opto Division Win Source Part Number: 1185513-ILQ30 Packaging: Tube Mounting Style: Through Hole Output Type: Darlington Input Type: DC Current - Output / Channel: 125mA Number of Channels: 4 Voltage - Isolation: 5300Vrms
- Package Type: SOT3
- Packing Method: Shipping Tube / Stick Magazine, Other
- TJ: -55 to 100 C
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QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
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QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
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Explore the features and specifications of the BSS138PW,115 N-channel MOSFET from Nexperia USA Inc. This MOSFET is designed for a wide range of electronic applications, offering a balanced supply and demand status and medium popularity. With a drain-source breakdown voltage of 60V and a (read more)
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Nexperia extend the 650 V IGBT portfolio with the release of 15 & 30 A discrete IGBTs in TO220-FP & D2PAK packages. Based on Nexperia’s third-generation technology with carrier stored trench-gate and field-stop (FS) structures, these devices offer optimized (read more)
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The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a (read more)
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In this demo, Nexperia's high power Bipolar Junction Transistors (BJT) are utilized as a high voltage current source in an LED lighting application. The set-up shows the well established discrete solution - a combination of precision shunt (read more)
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The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
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Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
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