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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -5A. Search-friendly keywords include transistor, BJT, switching, amplification, -5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5A. Search-friendly keywords include transistor, BJT, switching, amplification, 5A, Bipolar Transistor, Single Bipolar Transistors. This listing
- VCEO: 60 volts
- TJ: 150 C
- Features: Bipolar RF Transistors, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 0.5A, Bipolar
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 2.5A, Bipolar Transistor, Transistor,
- PD: 250 milliwatts
- Features: Bipolar RF Transistors, Other
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, AEC-Q101, NPN, 80V, 0.5A; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:120MHz; Power Dissipation Pd:200mW; DC Collector Current:500mA; DC Current Gain hFE:120hFE; Transistor RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, AEC-Q101, PNP, -80V, -0.5A; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:180MHz; Power Dissipation Pd:200mW; DC Collector Current:-500mA; DC Current Gain hFE:120hFE; TransistorRoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, AEC-Q101, NPN, 30V, 0.5A; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:360MHz; Power Dissipation Pd:150mW; DC Collector Current:500mA; DC Current Gain hFE:200hFE; Transistor RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, AEC-Q101, NPN, 60V, 0.5A; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:300MHz; Power Dissipation Pd:200mW; DC Collector Current:500mA; DC Current Gain hFE:120hFE; Transistor RoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 204225-FMC5A Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 47k, 4.7k Resistor - Emitter Base (R2) (Ohms): 47k, 10k Categories:
- Polarity: NPN, PNP
- Features: Other
- Package Type: SOT3
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN 60V
- Features: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 1174749-FMG5A Manufacturer Homepage: www.rohm.com RoHS State: Request Verification Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 1185575-IMH5A Manufacturer Homepage: www.rohm.com Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance
- Package Type: SOT3
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, PNP DARL 60V 5A
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Supplier: ODG (Origin Data Global)
Description: 650V 5A 2.2mΩ@10V,2.5A 106W 4V@250uA 1 N-Channel TO-220 MOSFETs ROHS
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Supplier: Win Source Electronics
Description: Manufacturer: Texas Instruments Win Source Part Number: 916122-CSD18511Q5A Series: NexFET™ Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 40 V 159A (Tc) 104W (Tc) Surface Mount 8-VSONP (5x6) Package: 8-PowerTDFN Package: Reel - TR Mounting: Surface Mount Family Name: CSD18511
- TJ: -55 to 150 C
- Features: MOSFET, Other
- Polarity: N-Channel
- Package Type: SOT3
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT BIPOLAR TRANS,PNP -100V,-5A
- VCEO: 100 volts
- IC(max): 5,000 milliamps
- PD: 3,200 milliwatts
- TJ: -55 to 150 C
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 11V 150mW 56@5mA,10V 50mA 2 NPN SC-88 Bipolar Transistors - BJT ROHS
- IC(max): 50 milliamps
- VCEO: 11 volts
- fT: 3,200 MHz
- PD: 150 milliwatts
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Supplier: ROHM Semiconductor GmbH
Description: 2SCR586J is a power transistor with Low VCE(sat), suitable for low frequency amplifier.
- PD: 40,000 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: NPN, Other, Power MOSFET
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN DARLINGTON 60V 5A, TO-220 PKG
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Supplier: Infineon Technologies AG
Description: PNP Silicon Switching Transistor Summary of Features Low collector-emitter saturation voltage Complementary type: SMBT2222A / MMBT2222A (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101
- IC(max): 150 to 600 milliamps
- VCEO: 60 volts
- VCBO: 60 volts
- fT: 200 MHz
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, NPN, 1.5A 80V, TO126 PKG
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, NPN, 300V 0.5A, SOT-32 PKG
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT PNP 50V 5A 3-PIN
- VCEO: 70 volts
- IC(max): -5,000 milliamps
- PD: 1,000 milliwatts
- TJ: -55 to 150 C
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Supplier: VAST STOCK CO., LIMITED
Description: Transistor Output Optocouplers Phototransistor Out Single CTR 250-500%
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Supplier: ROHM Semiconductor GmbH
Description: The power bipolar PNP transistor 2SAR586J is designed for driver circuits.
- PD: 40,000 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, PNP, Power MOSFET
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT BIP NPN 5A 50V
- VCEO: 50 volts
- IC(max): 5,000 milliamps
- PD: 800 milliwatts
- TJ: 150 C
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Supplier: ROHM Semiconductor GmbH
Description: 2SAR586D3 is a power transistor with Low VCE(sat), suitable for low frequency amplifier.
- PD: 10,000 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, PNP, Power MOSFET
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Supplier: ROHM Semiconductor GmbH
Description: 2SAR572D3 is a power transistor with Low VCE(sat), suitable for low frequency amplifier.
- PD: 10,000 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, PNP, Power MOSFET
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor
- Polarity: NPN
- Features: Other
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Supplier: ROHM Semiconductor USA, LLC
Description: 2SA2071P5 is a power transistor for high speed switching.
- PD: 500 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, PNP, Power MOSFET
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) Potential Applications For AF input stages
- IC(max): 100 milliamps
- VCEO: 45 volts
- VCBO: 50 volts
- fT: 250 MHz
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011) Potential Applications For AF input stages
- IC(max): 100 milliamps
- VCEO: 30 volts
- VCBO: 30 volts
- fT: 250 MHz
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Supplier: Acme Chip Technology Co., Limited
Description: OPTOISOLATR 5KV TRANSISTOR 4-DIP
- TJ: -55 to 110 C
- Features: Other
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: DigiKey
Description: RF Transistor NPN 10V 70mA 7GHz 200mW Surface Mount 3-CP
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
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Technology: MOSFET Drain-Source Breakdown Voltage: 60V Continuous Drain Current: 320mA (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 0.8nC @ 4.5V (read more)
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QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
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QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
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and a smaller form factor while maintaining the system's low cost. With several product families, such as the CoolGaN Transistors 650 V G5, CoolGaN Transistors 700 V G5, CoolGaN Transistor Dual 650 V G5, and CoolGaN Drive HB 600 V G5, these power devices deliver the highest efficiency with high (read more)
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turn-off losses, 175?°C operation, & a 5?μs short-circuit withstand time. Designed for hard-switching, high-voltage, high-frequency applications, they are ideal for industrial inverters, servo drives, small motor drives, welding, induction heating, & ESS. (read more)
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The average supercapacitor has a maximum charging voltage of between 2.5 and 2.7 V. For many applications a voltage this low isn’t particularly useful, so the common practice is to place multiple supercapacitor in series. Unfortunately, manufactured supercapacitor may have a tolerance (read more)
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Linear Voltage Fan Speed Control Using Microchip's TC64X Family
of various sizes. However, very large fans (with operating currents of 0.5A or more) can sometimes produce an unwanted acoustic noise component when operated with PWM control. In most cases, this is remedied by slowing the edges of the output switching transistor with the addition of a small capacitor