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Supplier: Radwell International
Description: ON SEMICONDUCTOR Semiconductors MC34064P-5
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Supplier: Richardson RFPD
Description: Radar Power Transistors
- Package Type: Other
- Transistor Type: Power BJT Transistors
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Supplier: ODG (Origin Data Global)
Description: RF BIPOLAR TRANSISTOR
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT SS Transistor
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Transistor
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT Transistor PNP
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN 60V
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOT-363 Bipolar Transistors - BJT ROHS
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOT-223 Bipolar Transistors - BJT ROHS
- Package Type: SOT223
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOT-23 Bipolar Transistors - BJT ROHS
- Package Type: SOT23
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOT-223 Bipolar Transistors - BJT ROHS
- Package Type: SOT223
- Transistor Type: Bipolar RF Transistors
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Supplier: Toshiba America, Inc.
Description: Toshiba offers a wide range of bipolar transistors suitable for various applications, including radio-frequency (RF) and power supply devices. Transistors Bipolar Transistors Bias Resistor Built-in Transistors (BRT) IGBTs IEGT (PPI & PMI) Multi-Chip Discrete
- Transistor Type: General Purpose BJT, Bipolar RF Transistors, IGBT
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Supplier: Utmel Electronic Limited
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Renesas Electronics America Win Source Part Number: 906378-2SC945A-A Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status:
- Package Type: SOT3
- Transistor Type: Bipolar RF Transistors
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Supplier: Northrop Grumman Corporation
Description: WPTB32A0912Ax 960-1215 MHz Bipolar RF Transistor The WPTB32A0912Ax application-specific transistor uses the 3217 L-Band die which was developed for pulsed radar systems. Optimal internal matching delivers high performance for applications such as the MIDS and JTIDS
- Transistor Grade / Operating Range: Military
- Transistor Type: Bipolar RF Transistors
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Supplier: Integra Technologies, Inc.
Description: S-Band Radar Transistor The high power pulsed radar transistor part number IB2729M5 is designed for S-Band ATC radar systems operating over the instantaneous bandwidth of 2.7-2.9 GHz. While operating in class C mode this common base device supplies a minimum of 5
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Description: TRANSISTOR
- Transistor Type: General Purpose BJT
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Supplier: ROHM Semiconductor USA, LLC
Description: Transistor
- Transistor Grade / Operating Range: Commercial
- Transistor Type: MOSFET
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) Potential Applications For AF input stages
- Package Type: SOT23, Other
- Polarity: PNP, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor
- Package Type: Other
- Polarity: NPN
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Supplier: MACOM
Description: At MACOM we offer a broad range of bipolar technology RF power transistor products as discrete devices, modules, and pallets from DC to 3.5 GHz. Our high power bipolar transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific,
- Package Type: Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial, Industrial
- Transistor Type: Bipolar RF Transistors
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Supplier: Rochester Electronics
Description: Small Signal Bipolar Transistor
- Package Type: Other
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Operating Frequency: 500 to 1000 MHz
- Output Power: 5 watts
- Package Type: Other
- Power Gain: 10 dB
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Supplier: Acme Chip Technology Co., Limited
Description: NPN TRANSISTOR
- Transistor Type: General Purpose BJT
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1352288-DSC5A01S0L Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Package: Tape & Reel Standard Package: 3,000 Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 40 V
- Operating Frequency: 150 MHz
- Output Power: 0.1500 watts
- Package Type: SOT3
- Polarity: NPN
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Supplier: Twilight Technology Inc.
Description: Twilight Technology, Inc. specializes in IC packaging and testing services focused on providing solutions for high reliability applications or obsolete components. Twilight Technology has manufactured and marketed a variety of standard and proprietary semiconductor packaging
- Transistor Type: Power BJT Transistors
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Description: TRANSISTOR
- Packing Method: Bulk Pack, Other
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C
- Package Type: Other
- Polarity: NPN
- Transistor Type: Power BJT Transistors
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Supplier: Utmel Electronic Limited
Description: Transistors RF MOSFET 2170MHZ 10W
- Output Power: 10 watts
- Packing Method: Tape Reel, Other
- Power Gain: 14.5 dB
- Transistor Type: MOSFET RF Transistors
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Supplier: PANJIT SemiConductor
Description: Small signal bipolar junction transistor
- Package Type: Other
- Polarity: PNP
- Transistor Type: General Purpose BJT
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Supplier: ROHM Semiconductor GmbH
Description: 2SCR375P5 is Low saturation voltage transistor for low frequency amplifier.
- Package Type: Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: Semicoa
Description: SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also available
- Package Type: Other
- Polarity: PNP
- Transistor Grade / Operating Range: Military
- Transistor Type: General Purpose BJT
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Featured Products Top
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The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
Browse RF Transistors Datasheets for Qorvo -
Technology: MOSFET Drain-Source Breakdown Voltage: 60V Continuous Drain Current: 320mA (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 0.8nC @ 4.5V (read more)
Browse Transistors Datasheets for Win Source Electronics -
QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
Browse Transistors Datasheets for Win Source Electronics -
turn-off losses, 175?°C operation, & a 5?μs short-circuit withstand time. Designed for hard-switching, high-voltage, high-frequency applications, they are ideal for industrial inverters, servo drives, small motor drives, welding, induction heating, & ESS. (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Nexperia B.V. -
The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo -
. Ideally suited for industrial motor drive applications, including industrial motor drives like servo motors ranging from 5 to 20 kW (20 kHz), robotics, elevators, operating grippers, in-line manufacturing, power inverters (read more)
Browse Transistors Datasheets for Nexperia B.V. -
The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited
Conduct Research Top
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Linear Voltage Fan Speed Control Using Microchip's TC64X Family
of various sizes. However, very large fans (with operating currents of 0.5A or more) can sometimes produce an unwanted acoustic noise component when operated with PWM control. In most cases, this is remedied by slowing the edges of the output switching transistor with the addition of a small capacitor