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Supplier: ERSAELECTRONICS PTE. LTD.
Description: buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, Schottky, 650 V, 650V. Search-friendly keywords include diode, rectifier, Schottky, switching diode,
- Tj: -55 C
- Features: Rectifier Diode, Schottky Barrier Diodes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Schottky, 650 V. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 650 V, Diode and Rectifier, Single Diodes. This
- Tj: -40 C
- Features: Rectifier Diode, Schottky Barrier Diodes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 650V, Diode and Rectifier, Diode Arrays. This listing
- Tj: 175 C
- Features: Other, Rectifier Diode
- RoHS Compliant: RoHS Compliant
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, Dual, Schottky, 650 V, 40 A. Search-friendly keywords include diode, rectifier, Schottky, switching diode, Automotive, Dual, 650 V,
- Tj: -40 C
- Features: Rectifier Diode, Schottky Barrier Diodes
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Supplier: Win Source Electronics
Description: 150°C Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: D-PAK (TO-252AA) Speed(Frequency): Fast Recovery = 200mA (Io) Popularity: Medium Fake Threat In the Open
- VF: 0.65 volts
- VR: 50 volts
- IR: 0.1 mA
- Tj: -40 to 150 C
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Supplier: Utmel Electronic Limited
Description: DIODE SCHOTTKY 650V 8A TO220AC
- VF: 1.45 volts
- IF: 38,000 mA
- VR: 650 volts
- IR: 0.105 mA
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Supplier: Utmel Electronic Limited
Description: DIODE SCHOTTKY 650V 20A TO-220-2
- VF: 1.55 volts
- IF: 20,000 mA
- VR: 650 volts
- IR: 0.4 mA
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Supplier: Utmel Electronic Limited
Description: DIODE ARRAY SCHOTTKY 650V TO247
- VF: 1.55 volts
- IF: 30,000 mA
- VR: 650 volts
- IR: 0.3 mA
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Supplier: Win Source Electronics
Description: Manufacturer: Vishay Semiconductor Diodes Division Win Source Part Number: 804413-MBRD650CT Packaging: Tube Mounting Style: SMD Speed: Fast Recovery = 200mA (Io) Diode Type: Schottky Operating Temperature - Junction: -40°C ~ 150°C Diode Configuration: 1 Pair Common Cathode
- VF: 0.7 volts
- VR: 50 volts
- IR: 0.1 mA
- Tj: -40 to 150 C
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Supplier: Newark, An Avnet Company
Description: SILICONCARBIDE SCHOTTKY DIODE, 24A, 650V; Product Range:Z-Rec Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:24A; Total Capacitive Charge Qc:23nC; Diode Case Style:TO-220; RoHS Compliant: Yes
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Supplier: Utmel Electronic Limited
Description: DIODE SCHOTTKY 650V 12A TO263AB
- VF: 1.55 volts
- IF: 34,000 mA
- VR: 650 volts
- IR: 0.24 mA
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Supplier: Newark, An Avnet Company
Description: SILICONCARBIDE SCHOTTKY DIODE, 37A, 650V; Product Range:Z-Rec Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:37A; Total Capacitive Charge Qc:34nC; Diode Case Style:TO-220; RoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Manufacturer: Vishay Semiconductor Diodes Division Win Source Part Number: 799234-VS-MBRD650CTTRPBF Packaging: Reel package Speed: Fast Recovery = 200mA (Io) Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting: SMD Diode Type: Schottky Current - Reverse Leakage @ Vr: 100μA @ 50V
- VF: 0.65 volts
- VR: 50 volts
- IR: 0.1 mA
- Tj: -40 to 150 C
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Supplier: World Star Tech
Description: Overview of WLD-10-650N Laser Diode WLD-10-650N laser diode has Single Mode. WLD-10-650N is ideal for pointing/alignment applications demanding reliable operations with a long lifetime and stable output power.
- Wavelength Range: 650 nm
- Laser Power: 10 milliwatts
- Operating Temperature Range: 70 C
- Laser Type: Alignment Lasers, Laser Diodes
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Supplier: Newark, An Avnet Company
Description: SIC SCHOTTKY DIODE, 650V, 18A, HDSOP; Product Range:CoolSiC 6G 650V Series; Diode Configuration:Single; Repetitive Peak Reverse Voltage:650V; Average Forward Current:18A; Total Capacitive Charge:9.6nC; Diode Case Style:HDSOP RoHS Compliant: Yes
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 5V Single 900mV@10mA 250mA SOT-23 Avalanche Diodes ROHS
- VF: 0.9 volts
- VR: 5 volts
- IR: 0.021 mA
- Features: Avalanche Diodes
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Supplier: Newark, An Avnet Company
Description: SIC SCHOTTKY DIODE, 650V, 4A, POWERFLAT; Product Range:-; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:4A; Total Capacitive Charge Qc:14.3nC; Diode Case Style:PowerFLAT; No. of RoHS Compliant: Yes
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Supplier: VAST STOCK CO., LIMITED
Description: Schottky Diodes & Rectifiers Schottky Rectifier 10 Amp, 650 Volt
- Package: DPAK
- Features: Other, Schottky Barrier Diodes
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Supplier: Win Source Electronics
Description: Manufacturer: Nexperia USA Inc. Win Source Part Number: 349584-PLVA650A Packaging: Reel - TR Mounting: SMD (SMT) Tolerance: ±4% Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Current - Reverse Leakage @ Vr: 21μA @ 4.5V Voltage - Zener (Nom) (Vz): 5V Impedance (Max) (Zzt): 700 Ohm Categories:
- VF: 0.9 volts
- IR: 0.021 mA
- Tj: -65 to 150 C
- VZ: 5 volts
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Supplier: ODG (Origin Data Global)
Description: DIODE ARRAY SCHOTTKY 50V TO252AA
- VF: 0.65 volts
- VR: 50 volts
- IR: 0.1 mA
- Arrangement: Common Cathode
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Supplier: VAST STOCK CO., LIMITED
Description: TVS Diodes / ESD Suppressors 600W 650V AEC-Q101 5% Bi-Directional
- Features: Other, Transient Voltage Suppressor Diodes (TVS)
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Supplier: Acme Chip Technology Co., Limited
Description: DIODE MODULE GP 650V 25A SOT227B
- VR: 650 volts
- Features: Other, Rectifier Diode
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Supplier: DigiKey
Description: Diode Schottky 50V 6A Surface Mount DPAK
- Tj: -55 to 150 C
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Supplier: ODG (Origin Data Global)
Description: TVS DIODE 553VWM 897VC DO214AA
- VR: 553 volts
- Tj: -65 to 150 C
- Peak Pulse Power: 600 watts
- Clamping Voltage (VC): 897 volts
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Supplier: Littelfuse, Inc.
Description: 650V, 2x80A parallel SiC Schottky diodes to reduce the component count in rectifier bridges, or for increased current density. Made of SiC material, this product is recommended for fast switching applications, and for systems with a need to reduce the power losses and increase the
- Features: Other, Schottky Barrier Diodes
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Supplier: ODG (Origin Data Global)
Description: LASER DIODE 650NM 3MW
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Description: DIODE GEN PURP 800V 650A
- VF: 0.95 volts
- VR: 800 volts
- Features: Rectifier Diode
- Life Cycle Stage: Removed
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Supplier: DigiKey
Description: Laser Diode 650nm 2.5mW 2.6V ~ 5V 40mA
- Wavelength Range: 650 nm
- Laser Power: 2.5 milliwatts
- Operating Voltage: 2.6 to 5 volts
- Operating Current Range: 40 milliamps
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Supplier: Littelfuse, Inc.
Description: The latest additions to the Littelfuse Rectifier Diode family are the new 38mm and 50mm dia die Wespack Rectifier Diodes and the new 96mm large area rectifier diodes. These new designs are constructed using low temperature sintering technology and have an improved package design
- Features: Other, Rectifier Diode
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Description: DIODE ZENER 5V 250MW TO236AB
- VF: 0.9 volts
- IR: 21 mA
- Tj: -65 to 150 C
- VZ: 5 volts
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Supplier: Nexperia B.V.
Description: Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package offers
- VF: 1.8 to 0.0018 volts
- IF: 10 mA
- IR: 0.00006 mA
- Tj: 175 C
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Supplier: Nexperia B.V.
Description: Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The Merged PiN Schottky (MPS) diode delivered as bare die in Tape and Reel (T & R) offers temperature independent capacitive
- VF: 1.8 volts
- IR: 60,000 mA
- VRRM: 650 volts
- IFSM: 440 amps
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Supplier: ProPhotonix, Ltd.
Description: A series of laser diode collimators specifically aimed at OEM customers wishing to use laser based technology in their products. A range of tiny laser diode collimators which achieves the technically difficult feat of combining high alignment accuracy with a tiny package. Features
- Wavelength: 650 nm
- Working Distance: 2.7 to 6 mm
- Focal Length: 5 m
- Diameter / Width: 6 mm
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Supplier: Nexperia B.V.
Description: Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The Merged PiN Schottky (MPS) diode delivered as bare die in Tape and Reel (T & R) offers temperature independent capacitive
- VF: 1.8 to 0.0018 volts
- IF: 16 mA
- IR: 0.00018 mA
- Tj: 175 C
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Supplier: Nexperia B.V.
Description: Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The Merged PiN Schottky (MPS) diode delivered as bare die in Tape and Reel (T & R) offers temperature independent capacitive
- VF: 1.8 to 0.0018 volts
- IF: 6 mA
- IR: 0.00018 mA
- Tj: 175 C
Find Suppliers by Category Top
Featured Products Top
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The latest additions include four 650 V, 1 A parts available in CFP3 and CFP5 packages intended for use in onboard chargers (OBC) and inverters for electric vehicles, power converters, PV inverters, and power supplies in industrial applications. Standard products include the PNU65010ER (CFP3) and PNU65010EP (CFP5) while AEC-Q101 qualified products include the PNU65010ER-Q (CFP3) and PNU65010EP-Q (CFP5). (read more)
Browse Diodes Datasheets for Nexperia B.V. -
Microsemi silicon carbide Schottky diode modules in stock at Richardson RFPD offer industry-leading integration and package. Shrink system size and weight, while reducing total system costs. Essentially zero forward and reverse recovery (read more)
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Available in 3 speeds — 30nS, 70nS & 100nS — the SMF/SXF diodes are perfect for 100kHz and higher applications. Starting with VMI's standard glass-body, hermetically sealed (read more)
Browse High Voltage Diodes Datasheets for Voltage Multipliers, Inc. -
Wolfspeed offers a family of 1200 V silicon carbide MOSFETs and Schottky diodes that are optimized for use in high power applications such as UPS, motor control and drives, switched-mode power supplies, solar and energy storage systems, electric vehicle charging, high (read more)
Browse Diodes Datasheets for DigiKey -
The QPL JANTX/JANTXV 1N6513FL, 1N6515FL and 1N6517FL formed-lead diodes feature higher current capability and lower thermal impedance than their axial-leaded counterparts. Optimized to get (read more)
Browse High Voltage Diodes Datasheets for Voltage Multipliers, Inc. -
The M160UFG 16kV high voltage diode is manufactured and 100% tested in the USA. Rated at 16kV, 10mA, the M160UFG is an axial-lead hermetically sealed high (read more)
Browse High Voltage Diodes Datasheets for Voltage Multipliers, Inc. -
The MBRS540T3G, manufactured by ON Semiconductor, is a high-performance Schottky barrier rectifier diode designed for high-frequency and energy-sensitive applications. With its low forward voltage drop and high surge current handling capacity, it offers engineers (read more)
Browse Diodes Datasheets for Win Source Electronics -
axial-leaded, mil-qualified (QPL), hermetically sealed, fully tested, high voltage diode. Tested in accordance with Mil-Prf-19500/577, the 1N6535 is available as a JANTX, or JANTXV device. Electrical specifications include 10kV, 25mA, 70ns. Mil (read more)
Browse High Voltage Diodes Datasheets for Voltage Multipliers, Inc. -
Vishay's 16 Gen 3 1,200 V silicon-carbide (SiC) Schottky diodes feature a merged PIN Schottky (MPS) design. They also combine high surge current robustness with low forward-voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power (read more)
Browse General Purpose Diodes Datasheets for DigiKey -
Voltage Multipliers Inc's latest High-Voltage, Surface-Mount Diode, the SXFL6527, is designed with 99.99% silver leads and offers 10kV (read more)
Browse Diodes Datasheets for Voltage Multipliers, Inc.
Conduct Research Top
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Double Side Sintered IGBT + FRD, 650V 200A, in a STO247 Package for High Performance Automotive Applications
The reliability requirements for packaged, single die IGBTs and IGBT die + Diode die in a single package are becoming more severe, particularly in demanding applications. Fully sintered packages were subjected to a delta Tj of 110C and demonstrated no signs of failure, even after 350k cycles.