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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 6A. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 6A, Bipolar Transistor, Bipolar Transistor Arrays. This
- VCEO: 125 volts
- TJ: 150 C
- Features: Bipolar RF Transistors, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 6A. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 6A, Bipolar Transistor, Bipolar Transistor Arrays. This
- VCEO: 60 volts
- VCBO: 70 volts
- PD: 4,000 milliwatts
- TJ: 150 C
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.6A. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 0.6A, Bipolar Transistor, Single Bipolar Transistors. This listing
- TJ: -55 to 150 C
- Features: Bipolar RF Transistors, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 0.6A. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 0.6A, Bipolar Transistor, Single Bipolar Transistors. This listing
- PD: 2,000 milliwatts
- TJ: -55 to 150 C
- Features: Bipolar RF Transistors
- Polarity: NPN
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 204226-FMC6A Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 100k Categories: Discrete Semiconductor Products Status: Not For New
- Polarity: NPN, PNP
- Features: Other
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 1185576-IMH6A Manufacturer Homepage: www.rohm.com Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance
- Package Type: SOT3
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, PNP 100V 6A
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Supplier: Newark, An Avnet Company
Description: DUAL N CHANNEL MOSFET, 20V, 6A; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6A; On Resistance Rds(on):0.045ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:1.8V RoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 1185561-IMD6A Manufacturer Homepage: www.rohm.com Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 1174750-FMG6A Manufacturer Homepage: www.rohm.com RoHS State: Request Verification Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance
- Package Type: SOT3
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Supplier: Newark, An Avnet Company
Description: DUAL N CHANNEL MOSFET, 40V, 6A; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:6.5A; On Resistance Rds(on):0.025ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
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Supplier: VAST STOCK CO., LIMITED
Description: IGBT Transistors IXGT6N170A TRL
- Features: IGBT
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Supplier: ODG (Origin Data Global)
Description: 1.2kV 6A 2.3Ω@10V,3A 63W 5V@250uA 1 N-Channel TO-220F MOSFETs ROHS
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Supplier: Utmel Electronic Limited
Description: TRANSISTOR, NPN, 40V, 0.6A, 50A/
- Polarity: NPN
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR,NPN,60V,6A,SOT1061; Transistor Polarity:NPN; Collector Emitter Voltage Max:60V; Continuous Collector Current:6A; Power Dissipation:2.1W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:150MHz RoHS Compliant: Yes
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, DARLINGTON, NPN, 100V 6A TO-220
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT PNP BIPOLAR 30V 2A
- Features: Bipolar RF Transistors
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, NPN, 40V, 0.5A, SUPERSOT-6; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; DC Collector Current:500mA; Power Dissipation Pd:700mW; DC Current Gain hFE:35hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, DARLINGTON, PNP 60V 6A TO-220 PKG
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Supplier: VAST STOCK CO., LIMITED
Description: Transistor Output Optocouplers H.Temp Phototrnstr 100-300% CTR
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 50V 200mW 200@2mA,6V 150mA PNP SOT-23 Bipolar Transistors - BJT ROHS
- IC(max): 150 milliamps
- VCEO: 50 volts
- fT: 80 MHz
- PD: 200 milliwatts
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Description: IGBT MODULE 600V 7A 38W E1
- Output Power: 38 watts
- Features: IGBT, Other
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Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60606NY. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB)
- hfe: 120
- VCEO: -60 volts
- IC(max): -6,000 milliamps
- PD: 1,350 milliwatts
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Supplier: Richardson RFPD
Description: Heavy Duty Braking Transistor Modules. Overvoltage Solutions for AC Drives. Braking Transistor and Braking Resistor modules are used with AC drives to eliminate overvoltage faults. The use of these modules permits controlled braking of the AC drive and dramatically shortens the time
- Features: Other
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Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60406NY. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB)
- hfe: 210
- VCEO: -40 volts
- IC(max): -6,000 milliamps
- PD: 1,350 milliwatts
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
- Package Type: SOT23
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60406PY Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements
- hfe: 230
- VCEO: 40 volts
- IC(max): 6,000 milliamps
- PD: 1,350 milliwatts
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Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61006NY Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements
- hfe: 170
- VCEO: -100 volts
- IC(max): -6,000 milliamps
- PD: 1,300 milliwatts
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Supplier: Infineon Technologies AG
Description: PNP Silicon Switching Transistor Summary of Features Low collector-emitter saturation voltage Complementary type: SMBT2222A / MMBT2222A (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101
- IC(max): 150 to 600 milliamps
- VCEO: 60 volts
- VCBO: 60 volts
- fT: 200 MHz
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN 120V 2A 900mW Through Hole TO-92MOD
- Polarity: NPN
- Features: Other
- Package Type: TO-92
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Supplier: Richardson RFPD
Description: Radar Power Transistors
- Power Gain: 7 dB
- Output Power: 6 watts
- Operating Frequency: 1,200 to 1,400 MHz
- Features: Other, Power BJT Transistors
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Supplier: ODG (Origin Data Global)
Description: TRANSISTOR OUTPUT SLOTTED SWITCH
- Measurement Range: 0.118 inch
- Sensor Technology: Optical Linear Encoder
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) Potential Applications For AF input stages
- IC(max): 100 milliamps
- VCEO: 45 volts
- VCBO: 50 volts
- fT: 250 MHz
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Supplier: Allied Electronics, Inc.
Description: Silicon Transistor, PNP Transistor Type, -200 V Collector to Emitter Voltage -65 to +200 °C operating temperature range High voltage silicon epitaxial planar transistors designed for use in consumer and industrial line-operated applications. Particularly suited as drivers in
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The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo -
Max Input Capacitance: 50pF @ 10V Maximum Gate-Source Voltage: ±20V Power Dissipation (Max): 260mW (Ta), 830mW (Tc) Maximum Rds On: 1.6 Ohm @ 300mA, 10V Temperature Range (read more)
Browse Transistors Datasheets for Win Source Electronics -
QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
collector-emitter breakdown voltage of 60V. With a low saturation voltage of 1.6V at 50mA to 500mA and a minimum DC current gain (hFE) of 100 at 150mA and 10V, this transistor offers efficient switching and amplification capabilities. The 2N2907AUB is RoHS compliant (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
GaN Transistors in a small 6 mm x 8 mm QFN-32 package. This product is ideally suited to enable high-power density designs of chargers and adapters, low-power motor drives, and lighting applications, utilizing the superior switching behavior of CoolGaN Transistors. The CoolGaN Drive HB 600 V G5 (read more)
Browse Transistors Datasheets for DigiKey -
Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
Browse Transistors Datasheets for Win Source Electronics -
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
Browse Transistors Datasheets for Win Source Electronics -
In this demo, Nexperia's high power Bipolar Junction Transistors (BJT) are utilized as a high voltage current source in an LED lighting application. The set-up shows the well established discrete solution - a combination of precision shunt (read more)
Browse Power Bipolar Transistors Datasheets for Nexperia B.V.