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Supplier: DigiKey
Description: Photodiode 850nm 5ns
- Dark Current: 1 nA
- Operating Temperature: -40 to 100 C
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Package / Mounting: Through Hole Technology (THT)
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Supplier: DigiKey
Description: Photodiode 850nm 5ns
- Dark Current: 1 nA
- Operating Temperature: -40 to 100 C
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Package / Mounting: Through Hole Technology (THT)
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Supplier: DigiKey
Description: Photodiode 850nm 2ns 140° Side View
- Dark Current: 0.1000 nA
- Operating Temperature: -25 to 85 C
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Package / Mounting: Through Hole Technology (THT), Other
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Supplier: DigiKey
Description: Photodiode 850nm 5ns 20° Radial
- Dark Current: 1 nA
- Operating Temperature: -40 to 100 C
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)
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Supplier: Hamamatsu Photonics
Description: f7 mm lens plastic package The S6036 is a Si PIN photodiode molded into a plastic package with a F7 mm lens. Features - Plastic package with f7 mm lens - High-speed response: 25 MHz typ. (VR=12 V, ?=850 nm) - High sensitivity: 0.56 A/W (?=?p) - Directivity: ±25° (half angle)
- Active Area Diameter or Length: 7 mm
- Active Area Height: 7 mm
- Dark Current: 10 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Hamamatsu Photonics
Description: f7 mm lens plastic package The S6036-01 is a Si PIN photodiode molded into a plastic package with a F7 mm lens. Features - Plastic package with f7 mm lens - High-speed response: 25 MHz typ. (VR=12 V, ?=850 nm) - High sensitivity: 0.56 A/W (?=?p) - Directivity: ±25° (half angle)
- Active Area Diameter or Length: 7 mm
- Active Area Height: 7 mm
- Dark Current: 10 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Electro Optical Components, Inc.
Description: IMM offers a variety of fiber optic standard components with different receptacles and in pigtail design, including laser diodes with wavelength ranges from 635 nm up to 1550 nm, SM and MM VCSELs, Receivers 850 nm and 1300 nm, as well as Fiber Collimators with
- Spectral Response Range: 850 to 1310 nm
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Description: SENSOR PHOTODIODE 850NM SIDE
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Description: SENSOR PHOTODIODE 850NM SIDE
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Description: SENSOR PHOTODIODE 850NM
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Description: SENSOR PHOTODIODE 850NM 8SMD
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Supplier: ODG (Origin Data Global)
Description: PHOTODIODE 780-870NM DIE 4GBPS
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Supplier: OSI Optoelectronics
Description: OSI Optoelectronics' family of large active area and high speed silicon PIN photodiodes possesses a large sensing area optimized for short-haul optical data communication applications at 850nm. The photodetectors exhibit high responsivity, wide bandwidth, low dark current and
- Active Area Diameter or Length: 0.2500 mm
- Dark Current: 0.0250 nA
- Operating Temperature: -40 to 75 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Utmel Electronic Limited
Description: PHOTODIODE IR 850NM SIDE LOOK
- RoHS Compliant: Yes
- Tj: -30 to 85 C
- VR: 20 volts
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Supplier: OSI Optoelectronics
Description: FCI-H125G-10 A low noise, high bandwidth photodetector plus transimpedance amplifier designed for short wavelength (850nm) high speed fiber optic data communications. The hybrid incorporates a 250µm diameter large sensing area, high sensitivity silicon photodetector. It also includes a
- Active Area Diameter or Length: 0.2500 mm
- Operating Temperature: -40 to 75 C
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
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Supplier: ODG (Origin Data Global)
Description: SENSOR PHOTODIODE 850NM SIDE
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Supplier: ODG (Origin Data Global)
Description: SENSOR PHOTODIODE 850NM RADIAL
- Technology: Optical Linear Encoder
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Supplier: ODG (Origin Data Global)
Description: SENSOR PHOTODIODE 850NM RADIAL
- Technology: Optical Linear Encoder
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1234984-SFH 203 AN23 Category: Sensors, Transducers>Optical Sensors - Photodiodes Package: Bulk Standard Package: 1,000 Diode Type: PIN Voltage - DC Reverse (Vr) (Max): 50 V Viewing Angle: 40° Wavelength: 850nm Spectral Range: 400nm
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1345429-ADPD2140WBCP ZN-RL Category: Sensors, Transducers - Optical Sensors - Photodiodes Package: Tape & Reel Response Time: 258ns, 260ns Standard Package: 10,000 Wavelength: 850nm Color - Enhanced: Infrared (NIR) Spectral Range: 800
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Supplier: Acme Chip Technology Co., Limited
Description: SENSOR PHOTODIODE 850NM 1X12 6
- VR: 20 volts
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Supplier: Newport MKS
Description: broad spectral range, which the user can access by entering any wavelength in the calibration range. 818-RAD is a general purpose circular geometry photodiode with an 8mm aperture and a cosine corrected diffuser. Its spectral range is 200 - 850 nm and its irradiance measuring
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Supplier: RS Components, Ltd.
Description: Sensitivity = 850nm Package Type = DIP Mounting Type = Surface Mount Number of Pins = 2 Diode Material = Si Minimum Wavelength Detected = 400nm Maximum Wavelength Detected = 1100nm Length = 4.5mm Width = 4mm
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Other
- Spectral Response: Visible, IR
- Spectral Response Range: 400 to 1100 nm
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Supplier: Win Source Electronics
Description: Manufacturer: Vishay Win Source Part Number: 902524-VEMD8080 Operating Temperature Range: -40°C ~ 85°C Features: Photodiode 850nm 70ns 130° 8-SMD, No Lead Package: 8-SMD, No Lead Package: Reel - TR Mounting: Surface Mount Family Name: VEMD8080
- Operating Temperature: -40 to 85 C
- Package Type / Mounting: Surface Mount (SMD)
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Supplier: Newport MKS
Description: Domain Fiber-Optic Detectors. InGaAs Photodetectors for IR Wavelengths Model 1414 utilizes an InGaAs Schottky photodiode providing coverage from 500 to 1630 nm for singlemode fiber versions and 850 to 1630 nm for multimode fiber versions. Internal Microwave Housing
- Bandwidth: 0.0 to 25000 MHz
- Connector Type: Other
- Receiver Rise Time: 0.0140 ns
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Supplier: Newport MKS
Description: The PL85D0032FCB-T Fiber Coupled Laser Diode consists of Fabry-Perot lasers, having a fiber pigtail precisely attached for optimum coupling efficiency. This 850 nm center wavelength version has a typical 3 mW of output power and includes a back facet photodiode. It is compatible
- Configuration: Specialty / Other
- Lamp / Output Power: 0.0030 watts
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Supplier: Quiktron, Inc.
Description: leave you amazed at the speed and accuracy in which optical fibers are fully analyzed and stored to an internal disk. By using high performance avalanche photodiodes, lasers, and sophisticated A/D circuitry, the FiberWarrior significantly reduces test times as compared to other OTDRs.
- Connector Type: FC
- Wavelength Range: 850 to 1300 nm
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Supplier: Broadcom Inc.
Description: ranging from 850 nm to 1600 nm, with reduced performance. The amplifier low noise figure and PIN high responsivity allow for a high sensitivity and thus a high splitting ratio in branched Passive Optical Networks. Access to the RF output as well as bias of PIN and amplifier is
- Cable Type: Single Mode
- Connector Type: FC
- Operating Temperature: -40 to 185 F
- Photodiode Semiconductor: InGaAs (900nm to 1700nm)
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Supplier: Micropac Industries, Inc.
Description: The 66329 high voltage isolator consists of an 850 nm LED optically coupled to a photodiode driven detector. The isolator provides high isolation and fast switching speeds over the specified temperature range of -40ºC to +100ºC.The isolator is built with hermetic components
- Collector Emitter Breakdown Voltage: 20 volts
- Isolation Voltage: 25000 volts
- Mounting Option: Through Hole (Plug-in)
- Operating Temperature: -40 to 100 C
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Supplier: OSI Optoelectronics
Description: multimode optical fiber pigtail, which allows excellent coupling with either single mode or multimode fiber systems. Product Features High Sensitivity High Overload Power Wide Dynamic Range 850 nm, 1310 nm, 1550 nm Operation Hermetic
- Amplifier Type: Transimpedance
- Bandwidth: 3 to 250 MHz
- Cable Type: Single Mode / Multimode
- Connector Type: FC, LC, SC, ST, Other
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Supplier: StellarNet, Inc.
Description: StellarNet's miniature fiber optic spectrometers with concave gratings deliver high performance for spectroscopy applications in the UV-VIS wavelength ranges covering 190-850nm (model C), or optionally 280-900nm (model CXR). The instruments are exceptionally robust with no
- Application Software Included: Yes
- Computer Interface: Yes
- Computer Interface Options: Serial Interface, Parallel Interface
- Detector Type: Photodiode
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Supplier: PCE Instruments / PCE Americas Inc.
Description: Inside the meter, there is an infrared LED light source with a wavelength of 850 nm. A photodiode positioned in a 90° angle to the measuring ray absorbs the light reflected by the particles in the dissolution. Diffused light or Nephelometric measuring methods are used for the
- Accuracy: 5 ±% Full Scale
- Battery Powered: Yes
- Display Type: Digital Display
- Measures Turbidity: Yes
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Supplier: Win Source Electronics
Description: Response Time: 5ns Diode Type: PIN Voltage - DC Reverse (Vr) (Max): 50V Viewing Angle: 150° Wavelength: 850nm Spectral Range: 750nm ~ 1100nm Responsivity @ nm: 0.62 A/W @ 850nm Current - Dark (Typ): 1nA Active Area: 1mm2 Popularity: Medium Fake Threat
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Supplier: Electro Optical Components, Inc.
Description: IMM offers a variety of fiber optic standard components with different receptacles and in pigtail design, including laser diodes with wavelength ranges from 635 nm up to 1550 nm, SM and MM VCSELs, Receivers 850 nm and 1300 nm, as well as Fiber Collimators with
- Laser Type: Laser Diodes
- Laser Wavelength: Infrared
- Operating Current Range: 9 to 12 milliamps
- Wavelength Range: 850 nm
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Supplier: World Star Tech
Description: World Star Tech maintains a large inventory of Ushio laser diodes ranging from 375nm to 850nm at various power levels as single mode laser diode and multi-mode high power laser diodes. Among these are the HL40033G (1000mW, 405nm) violet laser diode, ideal for imaging,
- Laser Power: 35 milliwatts
- Laser Type: Laser Diodes
- Laser Wavelength: Red
- Operating Temperature Range: -10 to 60 C
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USHIO LASER DIODES HL85023MG is an 850 nm infrared laser diode designed for high output power (read more)
Browse Lasers Datasheets for World Star Tech -
Laser Diodes World Star Tech maintains large inventory of Ushio laser diodes, ranging from 375 nm to 850 nm, at various power levels in both single-mode and multi-mode high-power configurations. Our Offerings Include: (read more)
Browse Diode Lasers Datasheets for World Star Tech -
Laser Diodes World Star Tech maintains large inventory of Ushio laser diodes, ranging from 375 nm to 850 nm, at various power levels in both single-mode and multi-mode high-power configurations. Our Offerings Include: (read more)
Browse Medical Equipment and Supplies Datasheets for World Star Tech -
Optical Equipment: Serves as a reliable light source for various optical instruments and systems USHIO LASER DIODES Ushio Laser Diodes are available from 375nm to 850nm at various power levels (read more)
Browse Diode Lasers Datasheets for World Star Tech -
Industry Display Bioanalytical & Medical USHIO LASER DIODES Ushio Laser Diodes are available from 375nm to 850nm at various power levels. Ushio (read more)
Browse Diode Lasers Datasheets for World Star Tech -
Integrating a high-power 850nm infrared VCSEL emitter or infrared LED emitter, equipped with a high-sensitivity photodiode receiver and an internal integrated physical infrared filter, HPS-16X series sensors can measure longer distance and improve the anti-ambient light ability (read more)
Browse Time of Flight Optical Sensors Datasheets for Hypersen Technologies Co., Ltd. -
available from 375nm to 850nm at various power levels. Ushio Laser Diode HL40033G ( 1000mW, 405nm) violet diode is ideal for imaging, biomedical and industrial applications (read more)
Browse Diode Lasers Datasheets for World Star Tech -
industries. USHIO LASER DIODES Ushio Laser Diodes are available from 375nm to 850nm at various power levels. Ushio red laser diodes are available from 633nm to 690nm. High power red laser (read more)
Browse Diode Lasers Datasheets for World Star Tech -
: Wavelength: 638 nm (typical) Optical Output Power: 3 W (Continuous Wave); 4.2 W (Pulsed) Operating Current: Up to 3 A (CW); Up to 3.8 A (Pulsed) Operating Voltage: 2.5–3.0 V (at 3 W output) Threshold Current: 570–850 mA Beam (read more)
Browse Diode Lasers Datasheets for World Star Tech
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Indicates content that may require registration and/or purchase.
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Broadband Opto-Electrical Receivers in Standard CMOS
850 nm photodiode DC responsivity .
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Energy-Efficient VCSELs for Optical Interconnects
J.A. Lott, A.S. Payusov, S.A. Blokhin, P. Moser, N.N. Ledentsov, D. Bimberg, Arrays of 850 nm photodiodes and vertical cavity surface emitting lasers for 25 to 40 Gbit/s optical interconnects.
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Contents: Phys. Status Solidi C 2/2012
Arrays of 850 nm photodiodes and vertical cavity surface emitting lasers for 25 to 40 Gbit/s optical interconnects .
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A comparison of single mode and multimode fiber links for use in wireless‐over‐fiber systems
Figure 1 shows the measurement setup for the RoF link consisting of a low-cost 850 nm VCSEL (SM85-3N001) from Optowell (www.optowell.com) and a low-cost 850 nm Photodiode (TPD- 8D12-006) from Truelight (www.truelight.com.tw).
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Front Matter: Volume 8054
25 Gbps 850 nm photodiode for emerging 100 Gb ethernet applications (Invited Paper .
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Optical data transmission at the superconducting super collider
For the wave length region around 850 nm photodiodes are fabricated from germanium or several of the III-V components (InGaAsP, GaAlAsSb).
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Proceedings of the workshop on triggering and data acquisition for experiments at the Supercollider
For the wavelength region around 850 nm photodiodes are fabrlcated from germamum or sevqral of the III-V comppnents (InGaAsP, G Sb).
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Large-Area p-i-n Photodiode With High-Speed and High-Efficiency Across a Wide Optical Operation Window (0.85 to 1.55 μm)
[7] J. A. Lott, A. S. Payusov, S. A. Blokhin, P. Moser, N. N. Ledentsov, and D. Bimberg, “Arrays of 850 nm photodiodes and vertical cavity surface emitting lasers for 25 to 40 Gbit/sec optical interconnects,” Phys.
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High Speed Optical Data Transmission With Compact 850 nm TO-Can Assemblies
[8] J. A. Lott, A. S. Payusov, S. A. Blokhin, P. Moser, N. N. Ledentsov, and D. Bimberg, “Arrays of 850 nm photodiodes and vertical cavity surface emitting lasers for 25 to 40 Gbit/s optical interconnects,” Phys.
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High-Speed, High-Efficiency, Large-Area p-i-n Photodiode for Application to Optical Interconnects from 0.85 to 1.55 μm Wavelengths
[5] J. A. Lott, A. S. Payusov, S. A. Blokhin, P. Moser, N. N. Ledentsov, and D. Bimberg, “Arrays of 850 nm photodiodes and vertical cavity surface emitting lasers for 25 to 40 Gbit/sec optical interconnects,” Phys.