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Supplier: ERSAELECTRONICS PTE. LTD.
Description: BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8A. Search-friendly keywords include transistor, BJT, switching, amplification, 8A, Bipolar Transistor, Single Bipolar Transistors. This listing supports
- VCEO: 60 volts
- TJ: -55 to 150 C
- Features: Bipolar RF Transistors, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 700V, 8A. Search-friendly keywords include transistor, BJT, switching, amplification, 700V, 8A, Bipolar Transistor, Single Bipolar Transistors. This
- IC(max): 8,000 milliamps
- VCEO: 700 volts
- VCBO: 1,500 volts
- fT: 7 MHz
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 400V, 8A. Search-friendly keywords include transistor, BJT, switching, amplification, 400V, 8A, Bipolar Transistor, Single Bipolar Transistors. This listing
- VCEO: 400 volts
- Features: Bipolar RF Transistors, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 8A. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 8A, Bipolar Transistor, Single Bipolar Transistors. This listing supports
- PD: 2,000 milliwatts
- Features: Bipolar RF Transistors, Darlington, Other
- Polarity: PNP
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, AEC-Q101, NPN, 32V, 0.8A; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:32V; Transition Frequency ft:150MHz; Power Dissipation Pd:200mW; DC Collector Current:800mA; DC Current Gain hFE:180hFE; Transistor RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, AEC-Q101, PNP, -32V, -0.8A; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-32V; Transition Frequency ft:200MHz; Power Dissipation Pd:200mW; DC Collector Current:-800mA; DC Current Gain hFE:120hFE; TransistorRoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 1174751-FMG8A Manufacturer Homepage: www.rohm.com RoHS State: Request Verification Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 1174705-FMA8A Manufacturer Homepage: www.rohm.com RoHS State: Request Verification Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 1185577-IMH8A Manufacturer Homepage: www.rohm.com Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance
- Package Type: SOT3
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Supplier: Newark, An Avnet Company
Description: DUAL N CHANNEL MOSFET, 40V, 8A; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:8A; On Resistance Rds(on):0.013ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, PNP, 80V, 8A, TO252; Transistor Polarity:PNP; Collector Emitter Voltage Max:80V; Continuous Collector Current:8A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes
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Supplier: ODG (Origin Data Global)
Description: RF TRANS NPN 21V 2GHZ 55EU
- IC(max): 300 milliamps
- VCEO: 21 volts
- Power Gain: 7 dB
- Operating Frequency: 2,000 MHz
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Supplier: ODG (Origin Data Global)
Description: 600V 8A 800mΩ@10V,4A 110W 4V@250uA 1 N-Channel TO-220AB-3 MOSFETs ROHS
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 205166-IMD8A Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Not For New Designs Case / Package: SMT6
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Supplier: Nexperia B.V.
Description: NPN switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits High current (max. 600 mA) Low voltage (max. 40 V) AEC-Q101 qualified Applications Switching and linear amplification
- Transistor Grade / Operating Range: Automotive
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, NPN, 8A, 60V, T0-220 PKG
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT TRANS GP BJT NPN 30V 1A 6PIN
- Features: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Transistor Output Optocouplers H.Temp Phototrnstr 130-260 % CTR
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Supplier: Utmel Electronic Limited
Description: 8.0 A, 100 V NPN Darlington Bipolar Power Transistor
- IC(max): 8,000 milliamps
- VCEO: 80 volts
- PD: 2,000 milliwatts
- TJ: -65 to 150 C
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 700V 125W 60@100mA,5V 8A NPN TO-3PN Bipolar Transistors - BJT ROHS
- IC(max): 8,000 milliamps
- VCEO: 700 volts
- fT: 7 MHz
- PD: 125,000 milliwatts
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Supplier: Infineon Technologies AG
Description: PNP Silicon Switching Transistor Summary of Features Low collector-emitter saturation voltage Complementary type: SMBT2222A / MMBT2222A (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101
- IC(max): 150 to 600 milliamps
- VCEO: 60 volts
- VCBO: 60 volts
- fT: 200 MHz
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Supplier: DigiKey
Description: RF Transistor NPN 10V 70mA 7GHz 100mW Surface Mount SMCP
- Polarity: NPN
- Features: Other
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) Potential Applications For AF input stages
- IC(max): 100 milliamps
- VCEO: 45 volts
- VCBO: 50 volts
- fT: 250 MHz
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011) Potential Applications For AF input stages
- IC(max): 100 milliamps
- VCEO: 30 volts
- VCBO: 30 volts
- fT: 250 MHz
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Supplier: Richardson RFPD
Description: Radar Power Transistors
- Power Gain: 8.15 dB
- Output Power: 8.5 watts
- Operating Frequency: 2,700 to 2,900 MHz
- Features: Other, Power BJT Transistors
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
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Supplier: Acme Chip Technology Co., Limited
Description: OPTOISOLATR 5KV TRANSISTOR 4-DIP
- TJ: -55 to 110 C
- Features: Other
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: RS Components, Ltd.
Description: PNP power transistor,MJ15004,20A BP
- TJ: 200 C
- Number of Transistors in the Chip: 1
- Features: General Purpose BJT, Other
- Polarity: PNP
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Supplier: ROHM Semiconductor USA, LLC
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: MJPE44H11-Q Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electrically similar to popular
- Features: Other, Power BJT Transistors
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Description: IGBT MODULE 1200V 160A 640W E3
- Output Power: 640 watts
- Features: IGBT, Other
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Supplier: ROHM Semiconductor USA, LLC
Description: 2SB1197KFRA is the high reliability Automotive transistor, suitable for low frequency power amplifier.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
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Description: Integrated Circuits (ICs) - Transistors - TRIACs
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Supplier: DigiKey
Description: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 80mA 150MHz 150mW Surface Mount SMini3-F2
- Polarity: NPN
- Features: Other
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The SMMBT3904LT3G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) tailored for general-purpose amplifier applications. With (read more)
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The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
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PSUs, the use of GaN devices enables ~0.8–1.2% efficiency improvement at full load compared to silicon, while supporting ~40–70% increases in power density at the stage level, driven by higher switching frequencies and reduced passive component size. In a typical 1 kW high-voltage motor (read more)
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