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Supplier: ERSAELECTRONICS PTE. LTD.
Description: BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8A. Search-friendly keywords include transistor, BJT, switching, amplification, 8A, Bipolar Transistor, Single Bipolar Transistors. This listing supports
- VCEO: 60 volts
- TJ: -55 to 150 C
- Features: Bipolar RF Transistors, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 700V, 8A. Search-friendly keywords include transistor, BJT, switching, amplification, 700V, 8A, Bipolar Transistor, Single Bipolar Transistors. This
- IC(max): 8,000 milliamps
- VCEO: 700 volts
- VCBO: 1,500 volts
- fT: 7 MHz
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 8A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 8A, Bipolar Transistor, Single Bipolar Transistors. This listing
- IC(max): 8,000 milliamps
- VCEO: 80 volts
- PD: 70,000 milliwatts
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 8A. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 8A, Bipolar Transistor, Single Bipolar Transistors. This listing supports
- PD: 2,000 milliwatts
- Features: Bipolar RF Transistors, Darlington, Other
- Polarity: PNP
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, AEC-Q101, NPN, 32V, 0.8A; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:32V; Transition Frequency ft:150MHz; Power Dissipation Pd:200mW; DC Collector Current:800mA; DC Current Gain hFE:180hFE; Transistor RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, AEC-Q101, PNP, -32V, -0.8A; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-32V; Transition Frequency ft:200MHz; Power Dissipation Pd:200mW; DC Collector Current:-800mA; DC Current Gain hFE:120hFE; TransistorRoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 1174751-FMG8A Manufacturer Homepage: www.rohm.com RoHS State: Request Verification Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 1174705-FMA8A Manufacturer Homepage: www.rohm.com RoHS State: Request Verification Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 1185577-IMH8A Manufacturer Homepage: www.rohm.com Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance
- Package Type: SOT3
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Supplier: Newark, An Avnet Company
Description: DUAL N CHANNEL MOSFET, 40V, 8A; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:8A; On Resistance Rds(on):0.013ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, PNP, 80V, 8A, TO252; Transistor Polarity:PNP; Collector Emitter Voltage Max:80V; Continuous Collector Current:8A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes
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Supplier: ODG (Origin Data Global)
Description: RF TRANS NPN 21V 2GHZ 55EU
- IC(max): 300 milliamps
- VCEO: 21 volts
- Power Gain: 7 dB
- Operating Frequency: 2,000 MHz
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Supplier: ODG (Origin Data Global)
Description: 600V 8A 800mΩ@10V,4A 110W 4V@250uA 1 N-Channel TO-220AB-3 MOSFETs ROHS
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 205166-IMD8A Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Not For New Designs Case / Package: SMT6
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Supplier: Nexperia B.V.
Description: NPN switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits High current (max. 600 mA) Low voltage (max. 40 V) AEC-Q101 qualified Applications Switching and linear amplification
- Transistor Grade / Operating Range: Automotive
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, NPN, 8A, 60V, T0-220 PKG
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT BIPOLAR PNP Vce -12v -1.5A
- Features: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Transistor Output Optocouplers H.Temp Phototrnstr 130-260 % CTR
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Supplier: Utmel Electronic Limited
Description: 8.0 A, 100 V NPN Darlington Bipolar Power Transistor
- IC(max): 8,000 milliamps
- VCEO: 80 volts
- PD: 2,000 milliwatts
- TJ: -65 to 150 C
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 700V 125W 60@100mA,5V 8A NPN TO-3PN Bipolar Transistors - BJT ROHS
- IC(max): 8,000 milliamps
- VCEO: 700 volts
- fT: 7 MHz
- PD: 125,000 milliwatts
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Supplier: Infineon Technologies AG
Description: PNP Silicon Switching Transistor Summary of Features Low collector-emitter saturation voltage Complementary type: SMBT2222A / MMBT2222A (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101
- IC(max): 150 to 600 milliamps
- VCEO: 60 volts
- VCBO: 60 volts
- fT: 200 MHz
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Supplier: DigiKey
Description: RF Transistor NPN 10V 70mA 7GHz 100mW Surface Mount SMCP
- Polarity: NPN
- Features: Other
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011) Potential Applications For AF input stages
- IC(max): 100 milliamps
- VCEO: 30 volts
- VCBO: 30 volts
- fT: 250 MHz
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Supplier: Richardson RFPD
Description: Radar Power Transistors
- Power Gain: 8.15 dB
- Output Power: 8.5 watts
- Operating Frequency: 2,700 to 2,900 MHz
- Features: Other, Power BJT Transistors
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) Potential Applications For AF input stages
- IC(max): 100 milliamps
- VCEO: 45 volts
- VCBO: 50 volts
- fT: 250 MHz
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: RS Components, Ltd.
Description: PNP power transistor,MJ15004,20A BP
- TJ: 200 C
- Number of Transistors in the Chip: 1
- Features: General Purpose BJT, Other
- Polarity: PNP
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Supplier: ROHM Semiconductor USA, LLC
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: Acme Chip Technology Co., Limited
Description: OPTOISOLATR 5KV TRANSISTOR 4-DIP
- TJ: -55 to 110 C
- Features: Other
- Packing Method: Shipping Tube / Stick Magazine
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Description: IGBT MODULE 1200V 160A 640W E3
- Output Power: 640 watts
- Features: IGBT, Other
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Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: MJPE44H11-Q Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electrically similar to popular
- Features: Other, Power BJT Transistors
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Supplier: ROHM Semiconductor USA, LLC
Description: 2SB1197KFRA is the high reliability Automotive transistor, suitable for low frequency power amplifier.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
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Description: Integrated Circuits (ICs) - Transistors - TRIACs
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Supplier: DigiKey
Description: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 80mA 150MHz 150mW Surface Mount SMini3-F2
- Polarity: NPN
- Features: Other
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The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
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PSUs, the use of GaN devices enables ~0.8–1.2% efficiency improvement at full load compared to silicon, while supporting ~40–70% increases in power density at the stage level, driven by higher switching frequencies and reduced passive component size. In a typical 1 kW high-voltage motor (read more)
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QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
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