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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Power Transistor
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT PNP Power Transistor
- Transistor Type: Bipolar RF Transistors
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Supplier: Radwell International
Description: SHINDENGEN Semiconductors D8LC40
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT PMSTA56/8/SOT323/SC- 70
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: RF BIPOLAR TRANSISTOR
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT DUAL PNP/NPN
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOT-363 Bipolar Transistors - BJT ROHS
- Transistor Type: Bipolar RF Transistors
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Supplier: Richardson RFPD
Description: Radar Power Transistors
- Package Type: Other
- Transistor Type: Power BJT Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOT-223 Bipolar Transistors - BJT ROHS
- Package Type: SOT223
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOT-23 Bipolar Transistors - BJT ROHS
- Package Type: SOT23
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOT-223 Bipolar Transistors - BJT ROHS
- Package Type: SOT223
- Transistor Type: Bipolar RF Transistors
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Supplier: Toshiba America, Inc.
Description: Toshiba offers a wide range of bipolar transistors suitable for various applications, including radio-frequency (RF) and power supply devices. Transistors Bipolar Transistors Bias Resistor Built-in Transistors (BRT) IGBTs IEGT (PPI & PMI) Multi-Chip Discrete
- Transistor Type: General Purpose BJT, Bipolar RF Transistors, IGBT
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Supplier: Acme Chip Technology Co., Limited
Description: TRANSISTOR
- Transistor Type: General Purpose BJT
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Supplier: Utmel Electronic Limited
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Rochester Electronics
Description: RF Small Signal Bipolar Transistor
- Package Type: Other
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Renesas Electronics America Win Source Part Number: 906378-2SC945A-A Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status:
- Package Type: SOT3
- Transistor Type: Bipolar RF Transistors
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Supplier: Northrop Grumman Corporation
Description: WPTB32A0912Ax 960-1215 MHz Bipolar RF Transistor The WPTB32A0912Ax application-specific transistor uses the 3217 L-Band die which was developed for pulsed radar systems. Optimal internal matching delivers high performance for applications such as the MIDS and JTIDS
- Transistor Grade / Operating Range: Military
- Transistor Type: Bipolar RF Transistors
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Supplier: ROHM Semiconductor USA, LLC
Description: Transistor
- Package Type: Other
- Polarity: P-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: MOSFET
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Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11 Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation
- Package Type: Other
- Polarity: PNP
- Transistor Type: Power BJT Transistors
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Description: TRANSISTOR
- Transistor Type: MOSFET
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) Potential Applications For AF input stages
- Package Type: SOT23, Other
- Polarity: PNP, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: MACOM
Description: At MACOM we offer a broad range of bipolar technology RF power transistor products as discrete devices, modules, and pallets from DC to 3.5 GHz. Our high power bipolar transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and
- Package Type: Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial, Industrial
- Transistor Type: Bipolar RF Transistors
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed transistor part number IB2856S65 is designed to operate in class C mode. This common base device supplies a minimum of 65 watts of peak pulse power under the conditions of 12ìs pulse width and 3% duty cycle. All devices are 100% screened for large signal RF
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor
- Package Type: Other
- Polarity: PNP
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Operating Frequency: 500 to 1000 MHz
- Output Power: 5 watts
- Package Type: Other
- Power Gain: 10 dB
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Supplier: Utmel Electronic Limited
Description: RF MOSFET Transistors BL RF
- Output Power: 350 watts
- Packing Method: Tape Reel, Other
- Power Gain: 19.2 dB
- Transistor Type: MOSFET RF Transistors
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Supplier: Twilight Technology Inc.
Description: Twilight Technology, Inc. specializes in IC packaging and testing services focused on providing solutions for high reliability applications or obsolete components. Twilight Technology has manufactured and marketed a variety of standard and proprietary semiconductor packaging
- Transistor Type: Power BJT Transistors
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Description: TRANSISTOR
- Packing Method: Bulk Pack, Other
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Supplier: Win Source Electronics
Description: Alternative Parts (Cross-Reference): Cross Manufacturer: Infineon Technologies Category: Discrete Semiconductor Products Transistors Bipolar (BJT) Single Bipolar Transistors Series: Automotive, AEC-Q101 Package: Bulk Product Status: Active Current - Collector (Ic) (Max
- Package Type: SOT3
- Transistor Type: Bipolar RF Transistors
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Description: TRANSISTOR
- Packing Method: Bulk Pack, Other
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Description: TRANSISTOR
- Packing Method: Bulk Pack, Other
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Supplier: PANJIT SemiConductor
Description: Small signal bipolar junction transistor
- Package Type: Other
- Polarity: PNP
- Transistor Type: General Purpose BJT
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Technology: MOSFET Drain-Source Breakdown Voltage: 60V Continuous Drain Current: 320mA (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 0.8nC @ 4.5V (read more)
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The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
In this demo, Nexperia's high power Bipolar Junction Transistors (BJT) are utilized as a high voltage current source in an LED lighting application. The set-up shows the well established discrete solution - a combination of precision shunt (read more)
Browse Power Bipolar Transistors Datasheets for Nexperia B.V. -
The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
Browse Transistors Datasheets for Win Source Electronics -
Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
Browse Transistors Datasheets for Win Source Electronics -
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
Browse Transistors Datasheets for Win Source Electronics -
The SMMBT3904LT3G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) tailored for general-purpose amplifier applications. With (read more)
Browse Transistors Datasheets for Win Source Electronics -
The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo -
PSUs, the use of GaN devices enables ~0.8–1.2% efficiency improvement at full load compared to silicon, while supporting ~40–70% increases in power density at the stage level, driven by higher switching frequencies and reduced passive component size. In a typical 1 kW high-voltage motor (read more)
Browse Transistors Datasheets for Nexperia B.V. -
QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo