Products & Services
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Supplier: Wolfspeed
Description: Wolfspeed’s CGH40010 is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40010, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and
- Output Power: 10 watts
- Operating Frequency: 6,000 MHz
- Features: HEMT, Other
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Supplier: Wolfspeed
Description: Wolfspeed’s CGH40035F is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40035F, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain
- Output Power: 35 watts
- Operating Frequency: 6,000 MHz
- Features: HEMT, Other
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Supplier: Wolfspeed
Description: Wolfspeed’s CGH40025 is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40025, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and
- Output Power: 25 watts
- Operating Frequency: 6,000 MHz
- Features: HEMT, Other
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Supplier: Wolfspeed
Description: Wolfspeed’s CGH40045 is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and
- Output Power: 45 watts
- Operating Frequency: 4,000 MHz
- Features: HEMT, Other
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Supplier: Richardson RFPD
Description: 0.45-6.0 GHz Low Noise Transistor
- Features: Other
- Transistor Type: PHEMT
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Supplier: Broadcom Inc.
Description: ATF-35143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 surface mount plastic package.
- Features: Other
- Transistor Type: PHEMT
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Supplier: Newark, An Avnet Company
Description: GATE DRIVER, GAN HEMT/MOSFET, VSON-10 ROHS COMPLIANT: YES
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Supplier: Qorvo
Description: Qorvo's QPD2018D is a discrete 180-micron pHEMT which operates from DC to 20 GHz. The QPD2018D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating
- Power Gain: 14 dB
- Operating Frequency: 0 to 20,000 MHz
- Features: HEMT, Other
- Transistor Grade / Operating Range: Military
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Supplier: Qorvo
Description: Qorvo's QPD2060D is a discrete 600-micron pHEMT which operates from DC to 20 GHz. The QPD2060D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating
- Power Gain: 12 dB
- Operating Frequency: 0 to 20,000 MHz
- Features: HEMT, Other
- Transistor Grade / Operating Range: Military
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Supplier: Qorvo
Description: Qorvo's QPD2025D is a discrete 250-micron pHEMT which operates from DC to 20 GHz. The QPD2025D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating
- Power Gain: 14 dB
- Operating Frequency: 0 to 20,000 MHz
- Features: HEMT, Other
- Transistor Grade / Operating Range: Military
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Supplier: Qorvo
Description: Qorvo's QPD2080D is a discrete 800-micron pHEMT which operates from DC to 20 GHz. The QPD2080D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating
- Power Gain: 11.5 dB
- Operating Frequency: 0 to 20,000 MHz
- Features: HEMT, Other
- Transistor Grade / Operating Range: Military
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Supplier: Skyworks Solutions, Inc.
Description: Please note: AS211-334 is being discontinued and is not recommended for new designs. The AS211-334 is an IC FET SPDT switch in a low cost miniature DFN package. The AS211-334 features low insertion loss and positive voltage operation with very low DC power consumption. This general purpose switch
- Frequency Range: 100 to 4,000 MHz
- Isolation (Port to Port): 22 to 26 dB
- Features: Other
- Type: SPDT
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Supplier: Skyworks Solutions, Inc.
Description: The SKY13290-313LF is a PHEMT IC high-power SPDT switch. This high-power switch has been designed for use from 20 MHz–2.5 GHz, where low loss, high isolation, low control voltage and ultraminiature package size are required. It can be controlled with positive, negative or a combination of both
- Frequency Range: 20 to 2,500 MHz
- Isolation (Port to Port): 18 to 26 dB
- Features: Other
- Type: SPDT
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Supplier: Accuris
Description: Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices
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Supplier: Skyworks Solutions, Inc.
Description: The AS213-92 is a medium power IC FET SPDT switch in a low cost miniature SC-70 6 lead plastic package.The AS213-92 features low insertion loss and positive voltage operation with very low DC power consumption. This general purpose switch can be used in a variety of telecommunications applications.
- Frequency Range: 100 to 3,000 MHz
- Isolation (Port to Port): 19 to 27 dB
- Features: Other
- Type: SPDT
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SKY13398-000 is being discontinued and is not recommended for new designs. The SKY13398-000 is a GaAs pHEMT Single-Pole, Triple-Throw (SP3T) antenna switch that operates in the 0.1 to 6.0 GHz frequency range. Switching between the antenna (RFC signal) and the RF1, RF2, and RF3 ports is
- Frequency Range: 20 to 6,000 MHz
- Isolation (Port to Port): 15 to 27 dB
- Features: Other
- Package Type: Surface Mount
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Supplier: Accuris
Description: Dynamic ON-Resistance Test Method Guidelines for GaN HEMT based Power Conversion Devices
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Description: IEC 63373:2022 In general, dynamic ON-resistance testing is a measure of charge trapping phenomena in GaN power transistors. IEC 63373:2022 provides guidelines for testing dynamic ON-resistance of GaN lateral power transistor solutions. The test methods can be applied to the following: a) GaN
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Supplier: Utmel Electronic Limited
Description: RF FET HEMT 150V 14DB SOT1228B
- Number of Transistors in the Chip: 2
- Power Gain: 14 dB
- Output Power: 100 watts
- Polarity: N-Channel
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Supplier: Broadcom Inc.
Description: Enhanced-mode PHEMT technology requires only a single positive voltage source. This high gain, high linearity, low noise transistor is optimized for receiver designs in cellular/PCS/WCDMA base stations, wireless local loop and other applications require low noise and high linearity performance in
- Features: Other
- Transistor Type: PHEMT
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Supplier: Utmel Electronic Limited
Description: RF FET HEMT 150V 11.5DB SOT467C
- Number of Transistors in the Chip: 1
- Power Gain: 11.5 dB
- Output Power: 50 watts
- Polarity: N-Channel
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Supplier: Broadcom Inc.
Description: Single-voltage high linearity, low noise E-pHEMT housed in an 8-lead LPCC (JEDEC DFP-N) package. The device exhibits exceptional RF performance, power efficiency and product consistency in the 50MHz to 6 GHz frequency range.
- Features: Other
- Transistor Type: PHEMT
- Package Type: SOT89
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Supplier: Broadcom Inc.
Description: This Single Voltage Enhanced Mode E-pHEMT GaAs FET comes packaged in a 1.4mm x 1.2mm x 0.7mm thin miniature leadless package. Its small size, high linearity and low noise figure is optimized for tower-mounted amplifiers, front-end LNA or hybrid modules for base stations, MMDS and other RF
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Transistor Type: PHEMT
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Supplier: ROHM Semiconductor GmbH
Description: GNE1015TB is an 8V Gate Source Voltage 150V GaN HEMT. It is a product of the EcoGaN™ series that contributes to power conversion efficiency and reducing size by making the best use of low ON resistance and high-speed switching, and the power supply efficiency is 96.5% or more even in the high
- Transistor Grade / Operating Range: Commercial
- Features: Other
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Supplier: ROHM Semiconductor GmbH
Description: GNE1040TB is an 8V Gate Source Voltage 150V GaN HEMT. It is a product of the EcoGaN™ series that contributes to power conversion efficiency and reducing size by making the best use of low ON resistance and high-speed switching, and the power supply efficiency is 96.5% or more even in the high
- Transistor Grade / Operating Range: Commercial
- Features: Other
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Supplier: Mini-Circuits
Description: SAV-551+ is an ultra-low noise, high IP3 transistor device, manufactured using E-PHEMT* technology enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly below 2.5 GHz, and when combining this noise figure with high IP3 performance in a single
- Minimum Gain: 7.6 dB
- Maximum Gain: 20.9 dB
- Noise Figure: 0.5 to 1.8 dB
- Operating Temperature: -40 to 85 C
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Supplier: ROHM Semiconductor GmbH
Description: GNE1007TB is an 8V Gate Source Voltage 150V GaN HEMT. It is a product of the EcoGaN™ series that contributes to power conversion efficiency and reducing size by making the best use of low ON resistance and high-speed switching, and the power supply efficiency is 96.5% or more even in the high
- Transistor Grade / Operating Range: Commercial
- Features: Other
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Supplier: Mini-Circuits
Description: SMT MMIC, Medium Power, Linear, pHEMT Amplifier, 500 MHz to 2500 MHz, 50Ω, SOIC Style Package
- Frequency Range: 500 to 2,500 MHz
- Minimum Gain: 15.5 dB
- Maximum Gain: 15.5 dB
- Output Power( P1dB): 18.2 dBm
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Supplier: Mini-Circuits
Description: Mini-Circuits’ SAV-331+ is a MMIC D-PHEMT transistor with an operating frequency range from 10 to 4000 MHz. This model combines high gain with extremely low noise figure, resulting in lower overall system noise. Low NF and IP3 performance make it an ideal choice for sensitive receivers in
- Minimum Gain: 11.5 dB
- Maximum Gain: 24.6 dB
- Noise Figure: 0.4 to 0.9 dB
- Operating Temperature: -40 to 85 C
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Supplier: Mini-Circuits
Description: SMT MMIC, Low Noise, Medium Power, Linear, pHEMT Transistor, 45 MHz to 6000 MHz, SOT-343 Style Package
- Minimum Gain: 8.3 dB
- Maximum Gain: 22.3 dB
- Noise Figure: 0.4 to 1.5 dB
- Operating Temperature: -40 to 85 C
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Supplier: SAE International
Description: candidate directly converting grid AC to high-frequency AC thereby saves one stage. However, its control complexity and the high cost of building the back-to-back switches are barriers its acceptance. Instead, this paper adopts the 650V E-mode GaN HEMTs to build a level-2 on-board charger
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Supplier: DigiKey
Description: GAN FET HEMT
- Features: Other
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Supplier: Acme Chip Technology Co., Limited
Description: RF MOSFET GAN HEMT
- Features: MOSFET, Other
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Description: RF MOSFET HEMT 440199
- Features: MOSFET, Other
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Supplier: DigiKey
Description: CGHV50200 - HEMT Evaluation Board
Featured Products Top
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The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo -
QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
Qorvo's QPA0023D is a high-performance driver amplifier fabricated on Qorvo's production 0.15 um pHEMT process (QPHT15). Covering 6 – 18 GHz, the QPA0023D provides 13.5 dB small signal gain and 30 dBm P1dB with a saturated power of 32 dBm. In addition, the device has low IMD3 level of (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
MMA053AA is a GaAs MMIC pHEMT distributed power amplifier die that operates from DC to 8 GHz. The amplifier provides 17 dB of gain, +43 dBm output IP3, and +31 dBm P3dB, while requiring only 410 mA from a 11 V supply. Gain flatness over the DC to 8 (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
Browse RF Transistors Datasheets for Qorvo -
Qorvo’s QPA0022 is a high-performance driver amplifier fabricated on Qorvo’s production 0.15 um pHEMT process (QPHT15). Covering 6 – 18 GHz, the QPA0022 provides 24 dB small signal gain and 25 dBm P1dB and saturated power of 26 dBm. In addition, the device can provide low IMD3 (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
QORVO’s pHEMT production process. The QPC4510 typically provides 32 dBm of output TOI at –10 dBm input power per tone and has a conversion gain of 13 dB. Optional nulling of the LO can improve LO Isolation by 30 dB. The QPC (read more)
Browse RF Frequency Converters Datasheets for Qorvo -
Qorvo's QPA0813 is a packaged, high performance driver amplifier fabricated on Qorvo's production 0.15 um GaAs pHEMT process (QPHT15). Covering 8?-?11 GHz, the QPA0813 provides 0.7 W of saturated output power with 50% power-added efficiency. The device has an Enable / Disable function for fast (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo
Conduct Research Top
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Wolfspeed Addresses Growing Ultra-High Frequency Radar Market With New GaN HEMT
The device was engineered for the growing ultra-high frequency (UHF) radar market, in which defense, public safety and land mobile radio applications seek to upgrade performance and component life cycle availability by implementing GaN RF power devices. The new UHF GaN RF device delivers greater
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Thermal Considerations for High-Power GaN RF Amplifiers
The reliability of high-power GaN HEMTs, employed in high power amplifiers, is driven by peak temperatures within the base semiconductor technology. As such, the design engineer must carefully consider the thermal environment presented to a high-power amplifier. This paper will examine how peak
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Perspective of Loss Mechanisms for Silicon and Wide Band-Gap Power Devices
Semiconductor losses and their potential for further improvement: This paper compares latest generation Superjunction power transistors versus e-mode GaN HEMTs and SiC MOSFETs
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Understanding the Phenomenon of High-Power Pulse Recovery in GaN LNAs
The Gallium Nitride (GaN) high electron mobility. transistor (HEMT) is well known for its use in microwave and millimeter wave power amplifiers due to its high breakdown voltage and ability to handle high RF power. Recently, GaN technology has also been used to create low noise amplifiers (LNAs
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GaN FETs: Why Cascode?
GaN technology and specifically GaN-on-Silicon HEMT technology has become a key focus for power engineers over the last few years. Its promise to provide the high-power performance and high-frequency switching many applications are demanding is clear. However as commercial GaN FETs become more
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Microwave Journal: Modelithics Releases the Modelithics Qorvo GaN Library v21.4.5
Version 21.4.5 of the Modelithics Qorvo GaN Library includes a total of 82 models containing 59 packaged power models, 17 GaN die power transistor products and six small-signal models. This release offers a non-linear model for the Qorvo QPD1028L, a 750 W (P3dB) discrete GaN on SiC HEMT using
More Information Top
Indicates content that may require registration and/or purchase.
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Gallium Nitride Electronics
2.5.7 MMIC HEMT Technology . . . . . . . . . . . . . . . . . . . . . . . .
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Materials and Reliability Handbook for Semiconductor Optical and Electron Devices
… experimental approaches to reliability studies, and finally case studies of laser degradation and HEMT degradation among the …
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GaN and ZnO-based Materials and Devices
… high Al content alloys, leading into devices such as green and UV LEDs, HEMT power devices, and …
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Physics and Technology of Heterojunction Devices
5.2 Performance of HEMT transistors 150 .
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http://dspace.mit.edu/bitstream/handle/1721.1/63065/725597610-MIT.pdf?sequence=2
… two of the most important figures of merit in frequency performance of GaN HEMTs and investigate them …
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Subject Index
Sakura, N., + , MWSYM 00 1715-1718 vol.3 AlGaN/GaN HEMT , microwave power amp., flip-chip mounting.
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http://dspace.mit.edu/bitstream/handle/1721.1/87927/880140579-MIT.pdf?sequence=2
… challenges is the lower- than-expected maximum current gain cutoff frequency (fT) of deeply-scaled GaN HEMTs .
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http://dspace.mit.edu/bitstream/handle/1721.1/87453/54927314-MIT.pdf?sequence=2
Hydrogen exposure of III-V HEMTs has been shown to cause a threshold voltage shift, AVT.
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http://dspace.mit.edu/bitstream/handle/1721.1/88372/881180516-MIT.pdf?sequence=2
… 2 and 3, reports studies of the origin of permanent structural and electrical degradation in AlGaN/GaN HEMTs .
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http://dspace.mit.edu/bitstream/handle/1721.1/81733/858862774-MIT.pdf?sequence=2
However, the very high power density in the active region of GaN HEMTs leads to significant degradation …