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Supplier: Rochester Electronics
Description: IRFS3307 - HEXFET Power MOSFET
- Package Type: Other
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Rochester Electronics
Description: IRF8714 - HEXFET Power MOSFET
- Package Type: Other
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Rochester Electronics
Description: IRF540NSPbF - HEXFET Power MOSFET
- Package Type: Other
- Transistor Type: MOSFET, Power MOSFET
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Supplier: ODG (Origin Data Global)
Description: IRF8714 - HEXFET POWER MOSFET
- IDSS: 14000 milliamps
- PD: 2500 milliwatts
- Package Type: Other
- Polarity: N-Channel, Other
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Supplier: Rochester Electronics
Description: IRFS3006 - HEXFET N-Channel Power MOSFET
- Package Type: Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel
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Supplier: Infineon Technologies AG
Description: IRF7842 | N-Channel Power MOSFET IAUT300N10S5N015 | Automotive MOSFET BSC016N06NS | N-Channel Power MOSFET IRF4905S | P-Channel Power MOSFET IPB036N12N3 G | N-Channel Power MOSFET BSC117N08NS5 | N
- Package Type: SO-8, Other
- Packing Method: Tape Reel, Other
- Polarity: P-Channel, Other
- QG: 38 nC
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Infineon Technologies AG
Description: ) Designers who used this product also designed with IRF9540N | P-Channel Power MOSFET IRF9540NS | P-Channel Power MOSFET IRFR3607 | N-Channel Power MOSFET IR2110S | Gate driver ICs IRFU5305 | P-Channel Power MOSFET
- Package Type: SO-8, Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
- TJ: 150 C
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Supplier: Infineon Technologies AG
Description: IRF7490 | N-Channel Power MOSFET IRL540N | N-Channel Power MOSFET IRL530NS | N-Channel Power MOSFET IPD33CN10N G | N-Channel Power MOSFET IRFR3607 | N-Channel Power MOSFET IRFI3205 | N-Channel Power MOSFET
- Package Type: TO-263, Other
- Packing Method: Tape Reel, Other
- Polarity: P-Channel, Other
- TJ: 150 C
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Supplier: Infineon Technologies AG
Description: ) Designers who used this product also designed with IRF9540N | P-Channel Power MOSFET IRF9540NS | P-Channel Power MOSFET IRFR3607 | N-Channel Power MOSFET IR2110S | Gate driver ICs IRFU5305 | P-Channel Power
- Package Type: TO-263, Other
- Packing Method: Tape Reel, Shipping Tube / Stick Magazine, Other
- Polarity: N-Channel, Other
- TJ: 175 C
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: HEXFET POWER MOSFETS
- Transistor Type: MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET 30V N-Channel HEXFET Power MOSFET
- Transistor Type: MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET 40V Single N-Channel HEXFET Power MOSFET
- Transistor Type: MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET 75V Single N-Channel HEXFET Power
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: INTERNATIONAL RECTIFIER Win Source Part Number: 1186881-IRF1302 Manufacturer Homepage: www.irf.com Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient
- Package Type: SOT3
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Supplier: PUI - Projections Unlimited, Inc.
Description: Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industria l applications at power
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Win Source Part Number: 069320-IRF6626 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Family Name: IRF6626 Categories: Discrete Semiconductor Products
- PD: 2200 to 42000 milliwatts
- Package Type: SOT3, Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
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Description: HEXFET POWER MOSFETS
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Acme Chip Technology Co., Limited
Description: N-CHANNEL POWER MOSFET
- Package Type: Other
- Transistor Type: MOSFET
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Description: N-CHANNEL POWER MOSFET
- IDSS: 12800 milliamps
- Package Type: TO-220, Other
- Packing Method: Bulk Pack, Other
- V(BR)DSS: 200 volts
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Supplier: Acme Chip Technology Co., Limited
Description: DIRECTFET PLUS POWER MOSFET
- IDSS: 19000 to 74000 milliamps
- Package Type: Other
- Packing Method: Bulk Pack, Other
- V(BR)DSS: 25 volts
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Supplier: Utmel Electronic Limited
Description: Single P-Channel 200 V 0.8 Ohm Flange Mount Power Mosfet - TO-220AB
- Polarity: P-Channel
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 808865-IRF530 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100V Part Status: Obsolete (End Of Life) Supplier Device
- Package Type: TO-220, SOT3
- Packing Method: Shipping Tube / Stick Magazine, Other
- Polarity: N-Channel
- TJ: -55 to 175 C
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Description: N-CHANNEL POWER MOSFET
- Package Type: TO-220, Other
- Packing Method: Bulk Pack, Other
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Supplier: Acme Chip Technology Co., Limited
Description: N-CHANNEL POWER MOSFET
- Package Type: Other
- Packing Method: Bulk Pack, Other
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Supplier: DigiKey
Description: POWER MOSFET TO220AB, 850 M @ 10
- Package Type: TO-220, Other
- Polarity: N-Channel
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Win Source Part Number: 1187254-IRF7406PBF Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Drive Voltage (Max Rds On
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Supplier: Quarktwin Technology Ltd.
Description: IRF3710 - N-CHANNEL POWER MOSFET
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Supplier: Lingto Electronic Limited
Description: IRF3710 - N-CHANNEL POWER MOSFET
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SPWM-An Analytical Characterization, and Performance Appraisal of Power Electronic Simulation Softwares
[17] S.Jeevananthan and P.Dananjayan,"Static model verification of IRF power MOSFETs using Fluke temperature probe (80T-150U) andcharacteristic functions aids visual learning and understanding .
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Measurement of incidental power losses in switching power devices
Power MOSFET IRF 330.
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A new technique to achieve zero voltage switching in resonant reset single switch forward converter
Without ZVS, a power loss ofabout 9.0 watts was estimated in the primary power MOSFET IRF PG 50.
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The 8th International Conference on Robotic, Vision, Signal Processing & Power Applications
The switch chosen for the prototype is the power MOSFETs IRF 540 N from the international rectifier.
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World Congress on Medical Physics and Biomedical Engineering May 26-31, 2012, Beijing, China
The switching circuit essentially consists of a Power MOSFET IRF 520 mounted on a heat sink.
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Embedded Control of LCL Resonant Converter
Analysis, Design, Simulation and
Experimental Results
Using the datasheets for the POWER MOSFET IRF 330 and the power diode – DIN 4001, given in appendix (A), the various parameters of the model are calculated and used in the circuit file.
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Development motor control unit for electronic steering system test rig
Power MOSFET irf 1404 is the right component for switching element in H bridge to drive high current motor result working perfectly.
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Boost converter for low voltage energy harvesting applications: Basic component selection
Fig. 1 shows the basic configuration of a boost converter using N-channel power MOSFET IRF 530 as a switch with resistive load, Res.
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Parametric analysis for designing low voltage and low frequency energy harvester booster
A MOSFET switch of N-channel power MOSFET IRF 530 and 1N5711 Schottky diode are used for this simulation.
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Observer based junction temperature estimator in thermoelectrical aging
Power MOSFET IRF 4## Life Expectancy .