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Supplier: Infineon Technologies AG
Description: regulator. All products are suitable for automotive applications. In order to meet special requirements, depletion MOSFETs are available with V GS(th) indicator on the reel. Summary of Features Depletion mode dv/dt rated Available with V GS(th) indicator on the reel Halogen
- VGS(off): -2.1 to -1 volts
- rDS(on): 6 ohms
- TJ: -55 to 150 C
- MOSFET Operating Mode: Depletion
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Supplier: Utmel Electronic Limited
Description: MOSFET N-CHANNEL DEPLETION MODE
- rDS(on): 3.5 ohms
- TJ: -55 to 150 C
- Number of Transistors in the Chip: 1
- Features: MOSFET, Other
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Supplier: Microchip Technology, Inc.
Description: The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp
- Polarity: N-Channel
- Package Type: SOT23, SOT89, TO-92
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Supplier: Microchip Technology, Inc.
Description: The LND01 is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input
- VGS(off): 0.8 to -3 volts
- rDS(on): 1.4 ohms
- Features: MOSFET
- Polarity: N-Channel
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Supplier: Littelfuse, Inc.
Description: Depletion Mode MOSFET DevicesOur N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process which realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS
- Polarity: N-Channel
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Supplier: Microchip Technology, Inc.
Description: This low threshold depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance
- Polarity: N-Channel
- Package Type: SOT89
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Supplier: Utmel Electronic Limited
Description: MOSFET D2 Depletion Mode Power MOSFETs
- rDS(on): 0.064 ohms
- QG: 224.99999999999997 nC
- PD: 830,000 milliwatts
- TJ: -55 to 175 C
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 4 N-Channel, Matched Pair 10.6V 12mA, 3mA 500mW Surface Mount 16-SOIC
- V(BR)DSS: 10 volts
- IDSS: 3 milliamps
- rDS(on): 75 ohms
- TJ: 0 to 70 C
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Supplier: Newark, An Avnet Company
Description: DEPLETION MODE MOSFET, 240V, 120mA, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:240V; Continuous Drain Current Id:120mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1.7W RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: N Channel Depletion Mode FET, T/R / T&R RoHS Compliant: Yes
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Supplier: Littelfuse, Inc.
Description: Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET like characteristics. They are suitable for level shifting, solid state
- Polarity: N-Channel
- Features: Other
- Package Type: TO-263
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Supplier: Littelfuse, Inc.
Description: As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and
- Polarity: N-Channel
- Features: Other
- Package Type: TO-247
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON TYPES 213821 , 213822, 2N3823 JANTX, JANTXV, AND JANS
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Supplier: Utmel Electronic Limited
Description: OFF-LINE SMPS CURRENT MODE CONTROLLER WITH INTEGRATED 650V STARTUP CELL/DEPLETION COOLMOS
- Pd: 220,000 milliwatts
- TJ: -25 to 130 C
- Device Type: CardBus Controller
- Features: Other, RoHS Compliant
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Supplier: Accuris
Description: TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON, TYPES 2N3821, 2N3822, AND 2N3823, JAN, JANTX, JANTXV, AND JANS
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON, TYPES 2N3821, 2N3822, 2N3823, JANTX, JANTXV AND JANS
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON, TYPES 2N3821, 2N3821UB, 2N3822, 2N3822UB, 2N3823, AND 2N3823UB, JAN, JANTX, JANTXV, AND JANS
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Supplier: RS Components, Ltd.
Description: MOSFET, DEPLETION-MODE, 400V, 25 Ohm
- MOSFET Operating Mode: Depletion
- Features: MOSFET, Other
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Supplier: Rochester Electronics
Description: 60V-600V N-Channel Depletion Mode MOSFET
- MOSFET Operating Mode: Depletion
- Features: MOSFET, Other
- Polarity: N-Channel
- Packing Method: Tape Reel
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Supplier: Microchip Technology, Inc.
Description: The HV9967B is an average-mode current control LED driver IC operating in a constant off-time mode. The IC features an integrated 60V, 0.8Ω MOSFET that can be used as a stand-alone buck converter switch, or connected as a source driver for driving an external high-voltage
- Features: RoHS Compliant
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET DepletionMode MOSFET
- Features: MOSFET
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Supplier: SAE International
Description: than a PHEV operating in real-world conditions. The Voltec powertrain architecture provides four modes of operation, including two that are unique and maximize the Volt's efficiency and performance. The specialized electric transaxle, known as the 4ET50, enables patented operating
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Supplier: Richardson RFPD
Description: TA9210D-EVB-G is a test fixture for TA9210D , a depletion mode GaN HEMT, optimized for 700-3700MHz.
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: MOSFETs N-Channel Depletion Mode FET Product overview: CPC3708CTR from IXYS Integrated Circuits is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing
- PD: 1.1 milliwatts
- MOSFET Operating Mode: Depletion
- Features: MOSFET, Other
- Polarity: N-Channel
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: MOSFETs N-Ch Depletion Mode Vertical DMOS FET Product overview: CPC3980ZTR from IXYS Integrated Circuits is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers
- PD: 1.8 milliwatts
- MOSFET Operating Mode: Depletion
- Features: MOSFET, Other
- Polarity: N-Channel
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1339975-IXTT2N170D2 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Depletion Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: Depletion Mode Drain
- PD: 568,000 milliwatts
- TJ: -55 to 150 C
- MOSFET Operating Mode: Depletion
- Features: MOSFET
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Supplier: Infineon Technologies AG
Description: 500V-950V CoolMOS™ N-Channel Power MOSFET BSS126I | N-Channel Depletion Mode MOSFET BSS126 | N-Channel Depletion Mode MOSFET IPD135N08N3 G | N-Channel Power MOSFET IPD80R600P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSS126I | N-Channel Depletion Mode
- Type: Constant Voltage
- Form Factor: Integrated Circuit (IC)
- Features: RoHS Compliant
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: MOSFETs N Ch Dep Mode FET 350V Product overview: CPC5602CTR from IXYS Integrated Circuits is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets,
- PD: 2.5 milliwatts
- MOSFET Operating Mode: Depletion
- Features: MOSFET, Other
- Polarity: N-Channel
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Supplier: MACOM
Description: The MABC-001000-DP000L is a bias control module that provides proper gate voltage and pulsed drain voltage biasing for GaN on SiC, GaN on Si, or GaAs RF power transistors or modules utilizing depletion mode semiconductor technology.
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Supplier: Infineon Technologies AG
Description: Applications Light electric vehicles (LEV) Designers who used this product also designed with IPB072N15N3 G | N-Channel Power MOSFET BSS169 | N-Channel Depletion Mode MOSFET IRFR2407 | N-Channel Power MOSFET IPB072N15N3 G | N-Channel Power MOSFET BSS169 | N-Channel Depletion
- Peak Output Current: 0.25 amps
- Supply Voltage: 10 to 20 volts
- Propagation Delay: 150 ns
- Driver Type: High-side Gate Driver
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Supplier: Infineon Technologies AG
Description: drones Power tools Designers who used this product also designed with ISC010N04NM6 | N-Channel Power MOSFET BSP129 | N-Channel Depletion Mode MOSFET ISC010N04NM6 | N-Channel Power MOSFET BSP129 | N-Channel Depletion Mode MOSFET ISC010N04NM6 | N-Channel Power MOSFET BSP129
- Supply Voltage: 8 to 125 volts
- Driver Type: High-side Gate Driver
- Features: Other
- Packing Method: Tape Reel
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Supplier: Integra Technologies, Inc.
Description: ■ GaN on SiC HEMT Technology ■ POUT-PK = 1000W @ ELM Mode S / 6.4% / 50V; (PAVG = 64W) ■ 1.030GHz Operating Frequency ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation
- Power Gain: 17 dB
- Output Power: 1,000 watts
- Operating Frequency: 1,030 MHz
- Features: MOSFET RF Transistors, Other, Power BJT Transistors
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Supplier: Skyworks Solutions, Inc.
Description: The SKY65050-372LF is a high performance, n-channel lownoise transistor. The device is fabricated from Skyworks advanced depletion mode pHEMT process and is provided in a 2.20 x 1.35 x 1.10 mm, 4-pin SC-70 package. The transistor’s low Noise Figure (NF), high gain, and excellent 3rd
- Frequency Range: 450 to 6,000 MHz
- Minimum Gain: 15.5 dB
- Maximum Gain: 15.5 dB
- Noise Figure: 0.65 dB
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Supplier: Richardson RFPD
Description: GaN Bias Controller/Sequencer Module. The MABC-001000-DP000L is a bias controller that provides proper gate voltage and pulsed drain voltage biasing for a device under test (DUT). Applicable DUT’s would be depletion-mode GaN (Gallium Nitride) or GaAs (Gallium Arsenide) power amplifiers
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is well-suited for applications requiring low input bias current, low input capacitance, and fast switching speed. The device exhibits enhancement mode characteristics at VGS > 0.00V while operating in the subthreshold voltage region with conventional depletion mode characteristics at VGS < 0 (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
types. Engine oils typically contain additive packages composed of detergents and alkaline components to neutralize acids that result from combustion of fuel. Additives will deplete to the point that the oil and additive combination can no longer satisfactorily protect the engine. Oftentimes the type (read more)
Browse Oil Sensors and Analyzers Datasheets for AMETEK Spectro Scientific
Conduct Research Top
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An Introduction to Depletion-mode MOSFETs
switches and CMOS. By contrast, the depletion-mode MOSFET has not received the same attention or popularity over this time, despite being the oldest member of the MOSFET family. It does have some rather unique characteristics though, which cannot be easily replicated by other means. This article
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New Design Concepts in Ultra Low Voltage and Nanopower Circuits with EPAD MOSFET Arrays
This introduction to EPAD MOSFET describes a broad selection of devices with precisely set gate threshold voltage values, including zero threshold mode, enhancement mode and depletion mode. Furthermore, novel circuit designs are presented to illustrate how these devices can be used at a practical
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Performance Characteristics of EPAD (R) Precision Matched Pair MOSFET Array
range from -3.50V Depletion to. +3.50V Enhancement devices, including standard products specified at -3.50V, -1.30V, -0.40V, +0.00V, +0.20V, +0.40V, +0.80V,. +1.40V, and +3.30V. ALD can also provide any customer desired. value between -3.50V and +3.50V. For all these devices, even the. depletion
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Indicates content that may require registration and/or purchase.
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http://dspace.mit.edu/bitstream/handle/1721.1/34219/Fonstad_MicroelecDevCkt_2006EEd.pdf?sequence=1
15.2.1 Resistor Load 15.2.2 Enhancement Mode Loads 15.2.3 Depletion Mode Load: n-MOS 15.2.4 Complementary Load: CMOS .
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Simple analytical models for the temperature dependent threshold behavior of depletion-mode devices
and density advantages in logic cir- cuits, and considerable attention has been given to the deple- tion mode I-V characteristics .
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Silicon Analog Components
The conduction mechanisms are different for a depletion mode than an enhancement-mode MOSFET [63, 64].
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Fundamentals of III-V Semiconductor MOSFETs
enhancement and depletion mode MOSFETs made of InAs [4].
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Operation and Modeling of the MOS Transistor
For p-channel devices, a negative VT 0 corresponds to the enhancement mode and a positive VT 0 to the depletion mode .
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http://dspace.mit.edu/bitstream/handle/1721.1/44293/272356922-MIT.pdf?sequence=2
3.2.2 Strong Depletion Mode Devices: InP Schottky . . . . .
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http://dspace.mit.edu/bitstream/handle/1721.1/40372/190864371-MIT.pdf?sequence=2
The third column shows the vehicle's range in charge- depleting mode .
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Testing and Analysis of Three Plug-in Hybrid Electric Vehicles
This system also includes a clever control system to enable the Prius to operate in a charge- depletion mode .
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Survey of cryogenic semiconductor devices
Low-temperature operation of npn double-diffused bipolar transistors, enhancement mode and depletion mode MOS transistors and enhancement-enhancement (EYE) type and enhancement- depletion (ED) type MOS circuits have been analyzed over the temperature range from room temperature, 300K,down to liquid …
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The prospects for ultrahigh-speed VLSI GaAs digital logic
Such tradeoffs are summa- rized in Table II for four types of devices: depletion mode MESFET’S, enhancement .