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Supplier: Infineon Technologies AG
Description: current regulator. All products are suitable for automotive applications. In order to meet special requirements, depletion MOSFETs are available with V GS(th) indicator on the reel. Summary of Features Depletion mode dv/dt rated Available with V
- MOSFET Operating Mode: Depletion
- Package Type: SOT223, Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
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Supplier: Infineon Technologies AG
Description: current regulator. All products are suitable for automotive applications. In order to meet special requirements, depletion MOSFETs are available with V GS(th) indicator on the reel. Summary of Features Depletion mode dv/dt rated Available with V
- MOSFET Operating Mode: Depletion
- Package Type: SOT23, Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
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Supplier: Infineon Technologies AG
Description: current regulator. All products are suitable for automotive applications. In order to meet special requirements, depletion MOSFETs are available with V GS(th) indicator on the reel. Summary of Features Depletion mode dv/dt rated Available with V
- MOSFET Operating Mode: Depletion
- Package Type: SOT223, Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
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Supplier: Infineon Technologies AG
Description: current regulator. All products are suitable for automotive applications. In order to meet special requirements, depletion MOSFETs are available with V GS(th) indicator on the reel. Summary of Features Depletion mode dv/dt rated Available with V
- MOSFET Operating Mode: Depletion
- Package Type: SOT23, Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
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Supplier: Utmel Electronic Limited
Description: MOSFET N-CHANNEL DEPLETION MODE
- Number of Transistors in the Chip: 1
- Packing Method: Tape Reel, Other
- Polarity: N-Channel
- TJ: -55 to 150 C
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Supplier: Utmel Electronic Limited
Description: MOSFET D2 Depletion Mode Power MOSFETs
- Number of Transistors in the Chip: 1
- PD: 830000 milliwatts
- Packing Method: Shipping Tube / Stick Magazine, Other
- QG: 225 nC
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Surface Mount 8-SOIC
- IDSS: 3 milliamps
- MOSFET Operating Mode: Depletion, Other
- Package Type: Other
- Polarity: N-Channel
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 4 N-Channel, Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 16-PDIP
- IDSS: 3 milliamps
- MOSFET Operating Mode: Depletion, Other
- Package Type: Other
- Polarity: N-Channel
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 8-PDIP
- IDSS: 3 milliamps
- MOSFET Operating Mode: Depletion, Other
- Package Type: Other
- Polarity: N-Channel
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Surface Mount 8-SOIC
- IDSS: 3 milliamps
- MOSFET Operating Mode: Depletion, Other
- Package Type: Other
- Polarity: N-Channel
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Supplier: Littelfuse, Inc.
Description: Depletion Mode MOSFET DevicesOur N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process which realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS
- Polarity: N-Channel
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Supplier: Microchip Technology, Inc.
Description: The LND250 is a high voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND250 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp
- Package Type: SOT23
- Polarity: N-Channel
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Supplier: Microchip Technology, Inc.
Description: The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp
- Package Type: TO-92, SOT23, SOT89
- Polarity: N-Channel
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Supplier: Littelfuse, Inc.
Description: Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust
- Polarity: N-Channel
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Supplier: Microchip Technology, Inc.
Description: These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and
- Package Type: SOT89, TO-251 / TO-252
- Polarity: N-Channel
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Supplier: Microchip Technology, Inc.
Description: DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input
- Package Type: TO-92, TO-220, SOT89
- Polarity: N-Channel
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Supplier: Utmel Electronic Limited
Description: OFF-LINE SMPS CURRENT MODE CONTROLLER WITH INTEGRATED 650V STARTUP CELL/DEPLETION COOLMOS
- Device Type / Applications: CardBus Controller
- IC Package Type: Other
- Pd: 220000 milliwatts
- RoHS Compliant: Yes
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Supplier: Littelfuse, Inc.
Description: As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power
- Package Type: TO-220, Other
- Polarity: N-Channel
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Supplier: Littelfuse, Inc.
Description: As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power
- Package Type: TO-247, Other
- Polarity: N-Channel
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON TYPES 213821 , 213822, 2N3823 JANTX, JANTXV, AND JANS
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Supplier: Rochester Electronics
Description: 60V-600V N-Channel Depletion Mode MOSFET
- MOSFET Operating Mode: Depletion
- Package Type: SOT23, Other
- Polarity: N-Channel
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Supplier: Accuris
Description: TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON, TYPES 2N3821, 2N3822, AND 2N3823, JAN, JANTX, JANTXV, AND JANS
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON, TYPES 2N3821, 2N3822, 2N3823, JAN, JANTX, JANTXV, AND JANS
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON, TYPES 2N3821, 2N3822, 2N3823 JAN, JANTX, JANTXV, AND JANS
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1346802-IXTT10N100D Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Depletion Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: Depletion
- MOSFET Operating Mode: Depletion
- PD: 400000 milliwatts
- Package Type: SOT3
- Polarity: N-Channel
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET DepletionMode MOSFET
- Transistor Type: MOSFET
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Supplier: SAE International
Description: The Chevrolet Volt is an electric vehicle (EV) that operates exclusively on battery power as long as useful energy is available in the battery pack under normal conditions. After the battery is depleted of available energy, extended-range (ER) driving uses fuel energy in an internal
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Supplier: RS Components, Ltd.
Description: 4PST Depletion Mode Isolation Switch CSP - Interface ICs - Multiplexer Switch ICs
- Configuration: Other
- Operating Ambient Temperature: -40 C
- Supply Voltage (VS): 1.6 to 3 volts
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Supplier: Richardson RFPD
Description: TA9110K-EVB-C is a test fixture for TA9110K , a depletion mode GaN HEMT, optimized for 3.3-3.8GHz.
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Supplier: Radwell International
Description: DISCONTINUED BY MANUFACTURER, TRANSISTOR, N-CHANNEL, DEPLETION MODE, MOSFET, 20O, TO-92-3. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Richardson RFPD
Description: GaN Bias Controller/Sequencer Module. The MABC-001000-DP000L is a bias controller that provides proper gate voltage and pulsed drain voltage biasing for a device under test (DUT). Applicable DUT’s would be depletion-mode GaN (Gallium Nitride) or GaAs (Gallium Arsenide) power
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Supplier: RS Components, Ltd.
Description: The Microchip LND01 is a low threshold, depletion mode (normally on) MOSFET transistor. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices. Channel Type = N Maximum Continuous
- Package Type: SOT23, Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: MACOM
Description: The MABC-001000-DP000L is a bias control module that provides proper gate voltage and pulsed drain voltage biasing for GaN on SiC, GaN on Si, or GaAs RF power transistors or modules utilizing depletion mode semiconductor technology.
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Supplier: RS Components, Ltd.
Description: The ON Semiconductor LV8400VEVB features the LV8400V-TLM-E (RS 757-0515), a single channel motor driver using a depletion mode MOSFET for the output stage. It has 4 control modes: forward, reverse, brake, and standby. Optimised for high current motor driving. Low power
- Category: Development Suite / Kit
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 500W @ 12us/3%/50V ¦ 2.856GHz Operating Frequency ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required ¦ Specified For
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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is well-suited for applications requiring low input bias current, low input capacitance, and fast switching speed. The device exhibits enhancement mode characteristics at VGS > 0.00V while operating in the subthreshold voltage region with conventional depletion mode characteristics at VGS < 0 (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
types. Engine oils typically contain additive packages composed of detergents and alkaline components to neutralize acids that result from combustion of fuel. Additives will deplete to the point that the oil and additive combination can no longer satisfactorily protect the engine. Oftentimes the type (read more)
Browse Oil Sensors and Analyzers Datasheets for AMETEK Spectro Scientific
Conduct Research Top
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An Introduction to Depletion-mode MOSFETs
switches and CMOS. By contrast, the depletion-mode MOSFET has not received the same attention or popularity over this time, despite being the oldest member of the MOSFET family. It does have some rather unique characteristics though, which cannot be easily replicated by other means. This article
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New Design Concepts in Ultra Low Voltage and Nanopower Circuits with EPAD MOSFET Arrays
This introduction to EPAD MOSFET describes a broad selection of devices with precisely set gate threshold voltage values, including zero threshold mode, enhancement mode and depletion mode. Furthermore, novel circuit designs are presented to illustrate how these devices can be used at a practical
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Performance Characteristics of EPAD (R) Precision Matched Pair MOSFET Array
range from -3.50V Depletion to. +3.50V Enhancement devices, including standard products specified at -3.50V, -1.30V, -0.40V, +0.00V, +0.20V, +0.40V, +0.80V,. +1.40V, and +3.30V. ALD can also provide any customer desired. value between -3.50V and +3.50V. For all these devices, even the. depletion
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Indicates content that may require registration and/or purchase.
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http://dspace.mit.edu/bitstream/handle/1721.1/34219/Fonstad_MicroelecDevCkt_2006EEd.pdf?sequence=1
15.2.1 Resistor Load 15.2.2 Enhancement Mode Loads 15.2.3 Depletion Mode Load: n-MOS 15.2.4 Complementary Load: CMOS .
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Simple analytical models for the temperature dependent threshold behavior of depletion-mode devices
and density advantages in logic cir- cuits, and considerable attention has been given to the deple- tion mode I-V characteristics .
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Silicon Analog Components
The conduction mechanisms are different for a depletion mode than an enhancement-mode MOSFET [63, 64].
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Fundamentals of III-V Semiconductor MOSFETs
enhancement and depletion mode MOSFETs made of InAs [4].
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Operation and Modeling of the MOS Transistor
For p-channel devices, a negative VT 0 corresponds to the enhancement mode and a positive VT 0 to the depletion mode .
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http://dspace.mit.edu/bitstream/handle/1721.1/44293/272356922-MIT.pdf?sequence=2
3.2.2 Strong Depletion Mode Devices: InP Schottky . . . . .
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http://dspace.mit.edu/bitstream/handle/1721.1/40372/190864371-MIT.pdf?sequence=2
The third column shows the vehicle's range in charge- depleting mode .
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Testing and Analysis of Three Plug-in Hybrid Electric Vehicles
This system also includes a clever control system to enable the Prius to operate in a charge- depletion mode .
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Survey of cryogenic semiconductor devices
Low-temperature operation of npn double-diffused bipolar transistors, enhancement mode and depletion mode MOS transistors and enhancement-enhancement (EYE) type and enhancement- depletion (ED) type MOS circuits have been analyzed over the temperature range from room temperature, 300K,down to liquid …
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The prospects for ultrahigh-speed VLSI GaAs digital logic
Such tradeoffs are summa- rized in Table II for four types of devices: depletion mode MESFET’S, enhancement .