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Supplier: Infineon Technologies AG
Description: regulator. All products are suitable for automotive applications. In order to meet special requirements, depletion MOSFETs are available with V GS(th) indicator on the reel. Summary of Features Depletion mode dv/dt rated Available with V GS(th) indicator on the reel Halogen
- VGS(off): -2.1 to -1 volts
- rDS(on): 6 ohms
- TJ: -55 to 150 C
- MOSFET Operating Mode: Depletion
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Supplier: Microchip Technology, Inc.
Description: The LND01 is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input
- VGS(off): 0.8 to -3 volts
- rDS(on): 1.4 ohms
- Features: MOSFET
- Polarity: N-Channel
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 4 N-Channel, Matched Pair 10.6V 12mA, 3mA 500mW Surface Mount 16-SOIC
- V(BR)DSS: 10 volts
- IDSS: 3 milliamps
- rDS(on): 75 ohms
- TJ: 0 to 70 C
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Supplier: Utmel Electronic Limited
Description: MOSFET D2 Depletion Mode Power MOSFETs
- rDS(on): 0.064 ohms
- QG: 224.99999999999997 nC
- PD: 830,000 milliwatts
- TJ: -55 to 175 C
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Supplier: Newark, An Avnet Company
Description: DEPLETION MODE MOSFET, 240V, 120mA, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:240V; Continuous Drain Current Id:120mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1.7W RoHS Compliant: Yes
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Supplier: Utmel Electronic Limited
Description: MOSFET N-CHANNEL DEPLETION MODE
- rDS(on): 3.5 ohms
- TJ: -55 to 150 C
- Number of Transistors in the Chip: 1
- Features: MOSFET, Other
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Supplier: Littelfuse, Inc.
Description: Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET like characteristics. They are suitable for level shifting,
- Polarity: N-Channel
- Features: Other
- Package Type: TO-263
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Supplier: Littelfuse, Inc.
Description: As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power
- Polarity: N-Channel
- Features: Other
- Package Type: TO-247
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Supplier: RS Components, Ltd.
Description: MOSFET, DEPLETION-MODE, 400V, 25 Ohm
- MOSFET Operating Mode: Depletion
- Features: MOSFET, Other
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET DepletionMode MOSFET
- Features: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: IXYS Category: Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs Series: Depletion Package: Tape & Reel (TR) /Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Operating
- MOSFET Operating Mode: Depletion
- Features: MOSFET
- Package Type: SOT3, TO-251 / TO-252
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: MOSFETs N-Ch Depletion Mode Vertical DMOS FET Product overview: CPC3982TTR from IXYS Integrated Circuits is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers
- PD: 400 milliwatts
- MOSFET Operating Mode: Depletion
- Features: MOSFET, Other
- Polarity: N-Channel
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.2A, MOSFET Transistor, Single FETs, MOSFETs. This
- V(BR)DSS: 20 volts
- PD: 540 milliwatts
- TJ: -55 C
- MOSFET Operating Mode: Depletion
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 33V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 33V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing
- V(BR)DSS: 33 volts
- PD: 1,500 milliwatts
- TJ: -40 C
- MOSFET Operating Mode: Depletion
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1346741-IXTT20N50D Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Depletion Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature:
- PD: 400,000 milliwatts
- TJ: -55 to 150 C
- MOSFET Operating Mode: Depletion
- Features: MOSFET
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: package options, lifecycle status, and procurement availability. Key searchable attributes include 4V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product
- V(BR)DSS: 30 volts
- PD: 800 milliwatts
- TJ: -55 C
- MOSFET Operating Mode: Depletion
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Supplier: Utmel Electronic Limited
Description: MOSFET NCH DUAL GATE 12V CMPAK-4
- V(BR)DSS: 12 volts
- PD: 300 milliwatts
- Number of Transistors in the Chip: 1
- MOSFET Operating Mode: Depletion
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Supplier: Rochester Electronics
Description: 60V-600V N-Channel Depletion Mode MOSFET
- MOSFET Operating Mode: Depletion
- Features: MOSFET, Other
- Polarity: N-Channel
- Packing Method: Tape Reel
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Supplier: Utmel Electronic Limited
Description: MOSFET N-CH 8V 40MA SOT343
- PD: 200 milliwatts
- TJ: -55 to 150 C
- Number of Transistors in the Chip: 1
- MOSFET Operating Mode: Depletion
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Description: Gives details for the following categories of metal-oxide semiconductor field-effect transistors (MOSFETs) with inverse diodes: type B depletion (normally on) type and Type C enhancement (normally off) type.
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Description: voltage below inversion, subthreshold slope value exhibits a variation tendency on applied gate voltage below threshold, i.e., varying depletion layer and vertical field induced surface band bending variations at the MOSFET channel surface. The author also will critically review the
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Supplier: ASTM International
Description: 1.1 This test method covers the measurement of MOSFET (Note 1) drain leakage current. Note 1-MOS is an acronym for metal-oxide semiconductor; FET is an acronym for field-effect transistor. 1.2 The test method is applicable to all enhancement-mode and depletion-mode MOSFETs. The
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Supplier: ASTM International
Description: 1.1 This test method covers the measurement of MOSFET (Note 1) drain leakage current. Note 1-MOS is an acronym for metal-oxide semiconductor; FET is an acronym for field-effect transistor. 1.2 This test method is applicable to all enhancement-mode and depletion-mode MOSFETs.
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Supplier: ASTM International
Description: acronym for metal-oxide semiconductor; FET is an acronym for field-effect transistor. 1.2 This test method is applicable to both enhancement-mode and depletion-mode MOSFETs, and for both silicon-on-insulator (SOI) and bulk-silicon MOSFETs. The test method specifies positive
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Supplier: Infineon Technologies AG
Description: 500V-950V CoolMOS™ N-Channel Power MOSFET BSS126I | N-Channel Depletion Mode MOSFET BSS126 | N-Channel Depletion Mode MOSFET IPD135N08N3 G | N-Channel Power MOSFET IPD80R600P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSS126I | N-Channel
- Type: Constant Voltage
- Form Factor: Integrated Circuit (IC)
- Features: RoHS Compliant
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Supplier: Infineon Technologies AG
Description: Applications Light electric vehicles (LEV) Designers who used this product also designed with IPB072N15N3 G | N-Channel Power MOSFET BSS169 | N-Channel Depletion Mode MOSFET IRFR2407 | N-Channel Power MOSFET IPB072N15N3 G | N-Channel Power MOSFET BSS169 | N-Channel
- Peak Output Current: 0.25 amps
- Supply Voltage: 10 to 20 volts
- Propagation Delay: 150 ns
- Driver Type: High-side Gate Driver
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Supplier: Infineon Technologies AG
Description: | Automotive MOSFET IAUC90N10S5N062 | Automotive MOSFET IPB017N10N5 | N-Channel Power MOSFET IAUZ40N10S5N130 | Automotive MOSFET BSZ011NE2LS5I | N-Channel Power MOSFET BSP135 | N-Channel Depletion Mode MOSFET IPB020N10N5LF | N-Channel Power
- Density: 64,000 kbits
- Operating Temperature: -40 to 85 C
- Supply Voltage: 2.7 V, 3 V, 3.6 V
- Memory Category: Flash
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Supplier: Integra Technologies, Inc.
Description: ■ GaN on SiC HEMT Technology ■ POUT-PK = 800W @ 128us/2%/50V ■ 1.030GHz Operating Frequency ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package Sealed With
- Power Gain: 17 dB
- Output Power: 800 watts
- Operating Frequency: 1,030 MHz
- Features: MOSFET RF Transistors, Other, Power BJT Transistors
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Supplier: Integra Technologies, Inc.
Description: ■ GaN on SiC HEMT Technology ■ POUT-PK = 50W @ 1ms/15%/50V ■ 5.2-5.9GHz Instantaneous Operating Frequency Range ■ 50Ω Internally Impedance Matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Metal Based Package Sealed With Ceramic-Epoxy Lid ■ Gold
- Power Gain: 14 dB
- Output Power: 50 watts
- Operating Frequency: 5,200 to 5,900 MHz
- Features: MOSFET RF Transistors, Other, Power BJT Transistors
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Supplier: Microchip Technology, Inc.
Description: start-up, thereby reducing the continuous power dissipation to a few milliwatts. The adjustable voltage version allows trimming of the output voltage from 8.0 to 12V. This version can also be connected to an external depletion mode MOSFET for increased output current. When used in
- Features: Other
- Package Type: SOIC / SOP, SOT89, TO-220
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Supplier: Win Source Electronics
Description: SC-59, SOT-23-3 Manufacturer Device Package: PG-SOT23-3 FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 160mA, 10V Vgs(th) (Max) @ Id: 2.4V @
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Supplier: Microchip Technology, Inc.
Description: The HV9967B is an average-mode current control LED driver IC operating in a constant off-time mode. The IC features an integrated 60V, 0.8Ω MOSFET that can be used as a stand-alone buck converter switch, or connected as a source driver for driving an external high-voltage
- Features: RoHS Compliant
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Supplier: Microchip Technology, Inc.
Description: depletion N-type MOSFETs. The MOSFET drains are connected to a center-tap ultrasound frequency pulse transformer. The secondary winding of the transformer can connect to the ultrasound piezo or capacitive transducer via a cable with a good impendence match. The MD2131 has a
- Features: Other
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The dual N-Channel MOSFET array by Advanced Linear Devices is precision factory-matched using ALD's EPAD® CMOS technology. These dual monolithic devices feature a Zero-Threshold™ voltage, which enables circuit designs with input/output signals (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
Rochester Electronics stocks over two-billion units of transistors and gate drive devices, covering 20,000-part numbers. Our inventory is a mix of both active and obsolete devices, with 40% exhibiting lead times greater than 20 weeks.
(read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Rochester Electronics -
Microchip’s 1700V Silicon Carbide MOSFET solutions from Richardson RFPD focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip’s proven SiC reliability also ensures no performance degradation over the life of the end equipment (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Richardson RFPD -
largely on the capability of being able to increase the power density on the PSE side while maintaining the same form factor. Infineon has long-standing expertise in power supplies and offers a highly reliable and efficient MOSFET portfolio for the power supply in your PoE designs (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Infineon Technologies AG -
largely on the capability of being able to increase the power density on the PSE side while maintaining the same form factor. Infineon has long-standing expertise in power supplies and offers a highly reliable and efficient MOSFET portfolio for the power supply in your PoE designs (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Infineon Technologies AG -
Nexperia today announced the launch of 16 new 80 V and 100 V power MOSFETs in the innovative copper-clip CCPAK1212 package, delivering industry-leading power density and outright performance. The innovative copper-clip design (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
Nexperia is proud to announce the release of our next-generation AEC-Q101 80 V trench MOSFET technology, featuring ultra-low RDS(on) for high-power 48 V automotive applications. Housed in robust copper-clip leaded packages, this (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
60 V MLPAK33 MOSFETs, enhancing the power MOSFET portfolio with high-performance, cost-effective, devices for high-volume applications such as chargers, battery management systems (BMS), and power supplies (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
Good-Ark Semiconductor introduces the GSFA20106, a high-performance 200V, 106A, 9.4mΩ N-Channel MOSFET designed for demanding high-frequency switching applications. Engineered with the latest deep trench technology and advanced process techniques, this MOSFET achieves ultra-low RDS(ON) and (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for New Yorker Electronics Co., Inc. -
Vishay introduces the SiHK050N65E, an advanced Gen 4.5 650 V E Series power MOSFET delivering superior efficiency for telecom, industrial, and computing applications. This n-channel MOSFET achieves 48.2% lower on-resistance and 65.4% improved resistance times gate charge FOM compared to previous (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for New Yorker Electronics Co., Inc.
Conduct Research Top
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An Introduction to Depletion-mode MOSFETs
switches and CMOS. By contrast, the depletion-mode MOSFET has not received the same attention or popularity over this time, despite being the oldest member of the MOSFET family. It does have some rather unique characteristics though, which cannot be easily replicated by other means. This article
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Performance Characteristics of EPAD (R) Precision Matched Pair MOSFET Array
range from -3.50V Depletion to. +3.50V Enhancement devices, including standard products specified at -3.50V, -1.30V, -0.40V, +0.00V, +0.20V, +0.40V, +0.80V,. +1.40V, and +3.30V. ALD can also provide any customer desired. value between -3.50V and +3.50V. For all these devices, even the. depletion
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New Design Concepts in Ultra Low Voltage and Nanopower Circuits with EPAD MOSFET Arrays
This introduction to EPAD MOSFET describes a broad selection of devices with precisely set gate threshold voltage values, including zero threshold mode, enhancement mode and depletion mode. Furthermore, novel circuit designs are presented to illustrate how these devices can be used at a practical
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Advanced Semiconducting Materials and Devices
11.14.1 Operation of n-Channel Depletion MOSFET . . . . .
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Fully-Depleted SOI CMOS Circuits and Technology
Moreover, steep subthreshold characteristics can be obtained when using a fully- depleted MOSFET (described below); and it is possible to make the threshold voltage (Vth) lower than in either a partially-depleted or a bulk-Si device.
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Semiconductor-On-Insulator Materials for Nanoelectronics Applications
The condensation process is compatible with ultra thin GeOI layers required for fully depleted MOSFETs .
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Operation and Modeling of the MOS Transistor
R. A. Haken, “Analysis of the deep depletion MOSFET and the use of the dc characteristics for determining bulk-channel charge coupled device parameters,” Solid-State Electronics, vol.
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FinFETs and Other Multi-Gate Transistors
In order to evaluate the sensitivity of future 50nm SOI devices, mixed- mode simulations were performed for both an SRAM cell and on inverter chains.[54] The simulated devices are the 50 nm single-gate fully depleted MOSFETs .
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Introduction to Electrical Engineering: Book and CD-ROM
Field-effect transistors (FETs) may be classified as JFETs (junction field-effect transistors), depletion MOSFETs (metal-oxide-semiconductor field-effect transistors), and enhancement MOSFETs.
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SOI Technologies Overview for Low-Power Low-Voltage Radio-Frequency Applications
The buried oxide is 400 nm thick while the upper silicon ®lm thicknesses are of 100 and 40 nm for partially- and fully- depleted MOSFETs , respectively.
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Special mechanisms in thin film SOI MOSFETs
This reduced Vt shift has to be taken into account in order to obtain an accurate modeling of moderately fully depleted MOSFETs [111.
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Subject Index
coprocessed bulk/partially depleted MOSFETs , substr. current enhancement.
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Practical Electronics for Inventors, Third Edition > Semiconductors
Enhancement MOSFETs, un-like depletion MOSFETs , have a normally resistive channel; there are few charge carriers within it.