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Supplier: Infineon Technologies AG
Description: Infineon is one of the few semiconductor manufacturers worldwide to offer depletion MOSFETs. Areas of application include power supply startup power, over-voltage protection, in-rush-current limiter, off-line voltage reference. With one single component it is possible to realize a
- MOSFET Operating Mode: Depletion
- Package Type: SOT223, Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
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Supplier: Infineon Technologies AG
Description: Infineon is one of the few semiconductor manufacturers worldwide to offer depletion MOSFETs. Areas of application include power supply startup power, over-voltage protection, in-rush-current limiter, off-line voltage reference. With one single component it is possible to realize a
- MOSFET Operating Mode: Depletion
- Package Type: SOT223, Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
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Supplier: Infineon Technologies AG
Description: Infineon is one of the few semiconductor manufacturers worldwide to offer depletion MOSFETs. Areas of application include power supply startup power, over-voltage protection, in-rush-current limiter, off-line voltage reference. With one single component it is possible to realize a
- MOSFET Operating Mode: Depletion
- Package Type: SOT23, Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
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Supplier: Infineon Technologies AG
Description: Infineon is one of the few semiconductor manufacturers worldwide to offer depletion MOSFETs. Areas of application include power supply startup power, over-voltage protection, in-rush-current limiter, off-line voltage reference. With one single component it is possible to realize a
- MOSFET Operating Mode: Depletion
- Package Type: SOT23, Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
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Supplier: Utmel Electronic Limited
Description: MOSFET D2 Depletion Mode Power MOSFETs
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Utmel Electronic Limited
Description: MOSFET N-CHANNEL DEPLETION MODE
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Surface Mount 8-SOIC
- IDSS: 3 milliamps
- MOSFET Operating Mode: Depletion, Other
- Package Type: Other
- Polarity: N-Channel
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 4 N-Channel, Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 16-PDIP
- IDSS: 3 milliamps
- MOSFET Operating Mode: Depletion, Other
- Package Type: Other
- Polarity: N-Channel
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 8-PDIP
- IDSS: 3 milliamps
- MOSFET Operating Mode: Depletion, Other
- Package Type: Other
- Polarity: N-Channel
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Surface Mount 8-SOIC
- IDSS: 3 milliamps
- MOSFET Operating Mode: Depletion, Other
- Package Type: Other
- Polarity: N-Channel
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Supplier: Microchip Technology, Inc.
Description: The LND01 is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input
- Package Type: SOT23
- Polarity: N-Channel
- VGS(off): -3 to -0.8000 volts
- rDS(on): 1.4 ohms
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Supplier: Littelfuse, Inc.
Description: Depletion Mode MOSFET DevicesOur N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process which realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS
- Polarity: N-Channel
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Supplier: Utmel Electronic Limited
Description: MOSFET N-CH 8V 40MA SOT343
- MOSFET Operating Mode: Depletion, Other
- Number of Transistors in the Chip: 1
- PD: 200 milliwatts
- Packing Method: Tape Reel, Other
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Supplier: Utmel Electronic Limited
Description: MOSFET P-CH 100V 18A TO-220ML
- MOSFET Operating Mode: Depletion, Other
- Number of Transistors in the Chip: 1
- PD: 2000 milliwatts
- Packing Method: Bulk Pack, Other
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Supplier: Littelfuse, Inc.
Description: Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET like characteristics. They are suitable for level shifting,
- Package Type: TO-247, Other
- Polarity: N-Channel
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Supplier: Littelfuse, Inc.
Description: Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET like characteristics. They are suitable for level shifting,
- Package Type: TO-251 / TO-252, Other
- Polarity: N-Channel
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Supplier: Littelfuse, Inc.
Description: Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET like characteristics. They are suitable for level shifting,
- Package Type: TO-220, Other
- Polarity: N-Channel
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Supplier: Rochester Electronics
Description: 60V-600V N-Channel Depletion Mode MOSFET
- MOSFET Operating Mode: Depletion
- Package Type: SOT23, Other
- Polarity: N-Channel
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Supplier: Microchip Technology, Inc.
Description: DN2625 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance
- Package Type: TO-251 / TO-252
- Polarity: N-Channel
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET DepletionMode MOSFET
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: IXYS Category: Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs Series: Depletion Package: Tape & Reel (TR) /Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Operating
- MOSFET Operating Mode: Depletion
- Package Type: SOT3, TO-251 / TO-252
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET N-Channel Depletion Mode FET
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1346802-IXTT10N100D Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Depletion Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature:
- MOSFET Operating Mode: Depletion
- PD: 400000 milliwatts
- Package Type: SOT3
- Polarity: N-Channel
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1346778-IXTT10N100D2 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Depletion Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature
- MOSFET Operating Mode: Depletion
- PD: 695000 milliwatts
- Package Type: SOT3
- Polarity: N-Channel
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1346707-IXTU02N50D Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Depletion Package: Tube Standard Package: 70 Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature:
- MOSFET Operating Mode: Depletion
- PD: 1100 to 25000 milliwatts
- Package Type: SOT3
- Polarity: N-Channel
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET N-CHANNEL DEPLETION MODE
- Transistor Type: MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET D2 Depletion Mode Power MOSFETs
- Transistor Type: MOSFET
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Description: Gives details for the following categories of metal-oxide semiconductor field-effect transistors (MOSFETs) with inverse diodes: type B depletion (normally on) type and Type C enhancement (normally off) type.
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Description: lower gate voltage below inversion, subthreshold slope value exhibits a variation tendency on applied gate voltage below threshold, i.e., varying depletion layer and vertical field induced surface band bending variations at the MOSFET channel surface. The author also will critically
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Supplier: ASTM International
Description: 1.1 This test method covers the measurement of MOSFET (Note 1) drain leakage current. Note 1-MOS is an acronym for metal-oxide semiconductor; FET is an acronym for field-effect transistor. 1.2 This test method is applicable to all enhancement-mode and depletion-mode MOSFETs.
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Supplier: RS Components, Ltd.
Description: Dual-gate Low noise Tetrode MOSFET RF transistors from Infineon Channel Type = N Maximum Continuous Drain Current = 25 mA Maximum Drain Source Voltage = 8 V Maximum Gate Source Voltage = -6 V, +6 V Package Type = SOT-343 Mounting Type = Surface Mount Pin Count = 4 Transistor Configuration =
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 800W @ 128us/2%/50V ¦ 1.090GHz Operating Frequency ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required ¦ Specified For Use
- Operating Frequency: 1090 MHz
- Output Power: 800 watts
- Package Type: Other
- Power Gain: 17 dB
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Supplier: Radwell International
Description: DISCONTINUED BY MANUFACTURER, TRANSISTOR, N-CHANNEL, DEPLETION MODE, MOSFET, 20O, TO-92-3. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 800W @ 128us/2%/50V ¦ 1.030GHz Operating Frequency ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required ¦ Specified For Use
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: RS Components, Ltd.
Description: The ON Semiconductor LV8400VEVB features the LV8400V-TLM-E (RS 757-0515), a single channel motor driver using a depletion mode MOSFET for the output stage. It has 4 control modes: forward, reverse, brake, and standby. Optimised for high current motor driving. Low power consumption. Low
- Category: Development Suite / Kit
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The dual N-Channel MOSFET array by Advanced Linear Devices is precision factory-matched using ALD's EPAD® CMOS technology. These dual monolithic devices feature a Zero-Threshold™ voltage, which enables circuit designs with input/output signals (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
Rochester Electronics stocks over two-billion units of transistors and gate drive devices, covering 20,000-part numbers. Our inventory is a mix of both active and obsolete devices, with 40% exhibiting lead times greater than 20 weeks.
(read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Rochester Electronics -
Microchip’s 1700V Silicon Carbide MOSFET solutions from Richardson RFPD focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip’s proven SiC reliability also ensures no performance degradation over the life of the end equipment (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Richardson RFPD -
largely on the capability of being able to increase the power density on the PSE side while maintaining the same form factor. Infineon has long-standing expertise in power supplies and offers a highly reliable and efficient MOSFET portfolio for the power supply in your PoE designs (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Infineon Technologies AG -
largely on the capability of being able to increase the power density on the PSE side while maintaining the same form factor. Infineon has long-standing expertise in power supplies and offers a highly reliable and efficient MOSFET portfolio for the power supply in your PoE designs (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Infineon Technologies AG -
Nexperia today announced the launch of 16 new 80 V and 100 V power MOSFETs in the innovative copper-clip CCPAK1212 package, delivering industry-leading power density and outright performance. The innovative copper-clip design (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
60 V MLPAK33 MOSFETs, enhancing the power MOSFET portfolio with high-performance, cost-effective, devices for high-volume applications such as chargers, battery management systems (BMS), and power supplies (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
Good-Ark Semiconductor introduces the GSFA20106, a high-performance 200V, 106A, 9.4mΩ N-Channel MOSFET designed for demanding high-frequency switching applications. Engineered with the latest deep trench technology and advanced process techniques, this MOSFET achieves ultra-low RDS(ON) and (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for New Yorker Electronics Co., Inc. -
Vishay introduces the SiHK050N65E, an advanced Gen 4.5 650 V E Series power MOSFET delivering superior efficiency for telecom, industrial, and computing applications. This n-channel MOSFET achieves 48.2% lower on-resistance and 65.4% improved resistance times gate charge FOM compared to previous (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for New Yorker Electronics Co., Inc. -
Nexperia is proud to introduce application-specific MOSFETs with enhanced dynamic current sharing. Offering up to 50% lower current delta between parallel devices, a tighter (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V.
Conduct Research Top
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An Introduction to Depletion-mode MOSFETs
switches and CMOS. By contrast, the depletion-mode MOSFET has not received the same attention or popularity over this time, despite being the oldest member of the MOSFET family. It does have some rather unique characteristics though, which cannot be easily replicated by other means. This article
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Performance Characteristics of EPAD (R) Precision Matched Pair MOSFET Array
range from -3.50V Depletion to. +3.50V Enhancement devices, including standard products specified at -3.50V, -1.30V, -0.40V, +0.00V, +0.20V, +0.40V, +0.80V,. +1.40V, and +3.30V. ALD can also provide any customer desired. value between -3.50V and +3.50V. For all these devices, even the. depletion
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New Design Concepts in Ultra Low Voltage and Nanopower Circuits with EPAD MOSFET Arrays
This introduction to EPAD MOSFET describes a broad selection of devices with precisely set gate threshold voltage values, including zero threshold mode, enhancement mode and depletion mode. Furthermore, novel circuit designs are presented to illustrate how these devices can be used at a practical
More Information Top
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Advanced Semiconducting Materials and Devices
11.14.1 Operation of n-Channel Depletion MOSFET . . . . .
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Fully-Depleted SOI CMOS Circuits and Technology
Moreover, steep subthreshold characteristics can be obtained when using a fully- depleted MOSFET (described below); and it is possible to make the threshold voltage (Vth) lower than in either a partially-depleted or a bulk-Si device.
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Semiconductor-On-Insulator Materials for Nanoelectronics Applications
The condensation process is compatible with ultra thin GeOI layers required for fully depleted MOSFETs .
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Operation and Modeling of the MOS Transistor
R. A. Haken, “Analysis of the deep depletion MOSFET and the use of the dc characteristics for determining bulk-channel charge coupled device parameters,” Solid-State Electronics, vol.
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FinFETs and Other Multi-Gate Transistors
In order to evaluate the sensitivity of future 50nm SOI devices, mixed- mode simulations were performed for both an SRAM cell and on inverter chains.[54] The simulated devices are the 50 nm single-gate fully depleted MOSFETs .
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Introduction to Electrical Engineering: Book and CD-ROM
Field-effect transistors (FETs) may be classified as JFETs (junction field-effect transistors), depletion MOSFETs (metal-oxide-semiconductor field-effect transistors), and enhancement MOSFETs.
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SOI Technologies Overview for Low-Power Low-Voltage Radio-Frequency Applications
The buried oxide is 400 nm thick while the upper silicon ®lm thicknesses are of 100 and 40 nm for partially- and fully- depleted MOSFETs , respectively.
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Special mechanisms in thin film SOI MOSFETs
This reduced Vt shift has to be taken into account in order to obtain an accurate modeling of moderately fully depleted MOSFETs [111.
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Subject Index
coprocessed bulk/partially depleted MOSFETs , substr. current enhancement.
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Practical Electronics for Inventors, Third Edition > Semiconductors
Enhancement MOSFETs, un-like depletion MOSFETs , have a normally resistive channel; there are few charge carriers within it.