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Supplier: Newark, An Avnet Company
Description: DUAL GATE MOSFET, N CHANNEL, TO-72-4; Transistor Polarity:N Channel; Drain Source Voltage Vds:25VDC; Continuous Drain Current Id:50mA; On Resistance Rds(on):-; Transistor Mounting:Through Hole; Rds(on) Test Voltage:-; Product Range:-RoHS Compliant: No
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Supplier: Lansdale Semiconductor, Inc.
Description: The 5400/7400 series of transistor-transistor logic is a medium-speed, high-noise-immunity family of saturating integrated logic circuits designed for general digital logic applications requiring clock frequencies to 30MHz and switching speeds in the 12-15 ns range under moderate
- Power Dissipation: 8 milliwatts
- Operating Temperature: -55 to 125 C
- Pin Count: 14
- IC Package Type: DIP, Other
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Supplier: Texas Instruments
Description: Dual 2-Wide 2-Input AND-OR-invert Gates (One Gate Expandable) 14-CFP -55 to 125
- Propagation Delay: 22 ns
- Operating Temperature: -55 to 125 C
- Gate Type: OR
- IC Package Type: Other
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Supplier: Lansdale Semiconductor, Inc.
Description: The 5400/7400 series of transistor-transistor logic consists of medium speed TTL integrated circuits. This high noise immunity family was designed for general digital logic applications requiring clock frequencies to 30MHz and switching speeds in the 12-15 ns range under moderate
- Propagation Delay: 12 ns
- Operating Temperature: -55 to 125 C
- Pin Count: 14
- Gate Type: AND
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Supplier: Lansdale Semiconductor, Inc.
Description: The 5400/7400 series of transistor-transistor logic consists of medium speed TTL integrated circuits. This high noise immunity family was designed for general digital logic applications requiring clock frequencies to 30MHz and switching speeds in the 12-15 ns range under moderate
- Propagation Delay: 10 ns
- Operating Temperature: -55 to 125 C
- Pin Count: 14
- IC Package Type: DIP, Other
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Supplier: Lansdale Semiconductor, Inc.
Description: The 5400/7400 series of transistor-transistor logic is a medium-speed, high-noise-immunity family of saturating integrated logic circuits designed for general digital logic applications requiring clock frequencies to 30MHz and switching speeds in the 12-15 ns range under moderate
- Number of Inputs: 4
- Operating Temperature: -55 to 125 C
- Pin Count: 14
- IC Package Type: DIP, Other
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Supplier: Texas Instruments
Description: Dual 4-input Positive-NOR gates 14-PDIP 0 to 70
- Propagation Delay: 22 ns
- Operating Current: 0.019 mA
- Operating Temperature: 0 to 70 C
- Supply Voltage: 5 V
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Supplier: Texas Instruments
Description: Dual 4-Input NOR Gates With Strobe 14-CDIP -55 to 125
- Propagation Delay: 22 ns
- Operating Temperature: -55 to 125 C
- Gate Type: NOR
- IC Package Type: Other
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Supplier: Texas Instruments
Description: Dual 4-Input NOR Gates With Strobe 16-CDIP -55 to 125
- Propagation Delay: 22 ns
- Operating Temperature: -55 to 125 C
- Gate Type: NOR
- IC Package Type: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, MOSFET
- Features: MOSFET
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Supplier: Nexperia B.V.
Description: The 74HC2G16; 74HCT2G16 is a high-speed Si-gate CMOS device. The 74HC2G16; 74HCT2G16 provides two buffers. Features and benefits Wide supply voltage range from 2.0 V to 6.0 V High noise immunity CMOS low power dissipation Balanced propagation delays Unlimited input rise and fall times
- Operating Temperature: -40 to 125 C
- Supply Voltage: 5 V
- Gate Type: Buffer / Driver
- IC Package Type: Other
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Supplier: Allied Electronics, Inc.
Description: CMOS Logic, 0 to +70 °C, Dual 4-Input Positive NAND Gates These devices contain two independent 4-input NAND gates.
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL DUAL-GATE, DEPLETION-TYPE, INSULATED-GATE, SILICON TYPES 3N204, TX3N204 AND TXV3N204
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 2A. Search-friendly keywords include gate driver IC, MOSFET driver, IGBT driver, power switching, Dual, 2A,
- Supply Voltage: 16 to 30 volts
- Rise Time: 60 ns
- Fall Time: 60 ns
- Features: Other
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Supplier: Nexperia B.V.
Description: The 74HC2G08; 74HCT2G08 is a dual 2-input AND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. Features and benefits Wide supply voltage range from 2.0 V to 6.0 V Input levels: For 74HC2G08: CMOS
- Propagation Delay: 14 ns
- Operating Temperature: -40 to 125 C
- Supply Voltage: 5 V
- Gate Type: AND
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Supplier: Nexperia B.V.
Description: The 74AHC2G00; 74AHCT2G00 are high-speed Si-gate CMOS devices. They provide two 2-input NAND gates. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V. Features and
- Propagation Delay: 3.6 ns
- Operating Temperature: -40 to 125 C
- Supply Voltage: 5 V
- Gate Type: NAND
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Supplier: Utmel Electronic Limited
Description: MOSFET NCH DUAL GATE 12V CMPAK-4
- V(BR)DSS: 12 volts
- PD: 300 milliwatts
- Number of Transistors in the Chip: 1
- MOSFET Operating Mode: Depletion
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Supplier: Utmel Electronic Limited
Description: MOSFET N-CH DUAL GATE 6V 6TSSOP
- V(BR)DSS: 6 volts
- PD: 180 milliwatts
- Number of Transistors in the Chip: 2
- MOSFET Operating Mode: Enhancement
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Supplier: Newark, An Avnet Company
Description: IGBT MOD, DUAL N-CH, 1.7KV, 400A; Transistor Polarity:Dual N Channel; DC Collector Current:400A; Collector Emitter Saturation Voltage Vce(on):1.95V; Collector Emitter Voltage V(br)ceo:1.7kV; Transistor Case Style:Module; No. of RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: IGBT MOD, DUAL N-CH, 1.2KV, 450A; Transistor Polarity:Dual N Channel; DC Collector Current:450A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: IGBT MOD, DUAL N-CH, 1.2KV, 600A; Transistor Polarity:Dual N Channel; DC Collector Current:600A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case RoHS Compliant: Yes
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Supplier: Allied Electronics, Inc.
Description: Dual Gate N-Channel MOSFET, Drain Current 50 mA, Temperature Range -65 to +175 °C 12 MHz (Max.) bandwidth at VDD≥18 V 300 °C lead temperature during soldering 3.3 pF input capacitance, 3.5 dB noise figure at VDD≥18 V and 0.220 in. outer diameter.
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Supplier: Utmel Electronic Limited
Description: Gate Drivers 3A Dual High Speed MOSFET Driver (Lead Free)
- TJ: 0 to 150 C
- Features: MOSFET, Other
- Packing Method: Tape Reel
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Supplier: Allied Electronics, Inc.
Description: CMOS Logic Type, Dual Non-Retriggerable Monostable Multivibrator with Reset Pulse width variance is typically less than +⁄- 5% Overriding reset terminates output pulse These device are high-speed Si-gate CMOS devices and are pin compatible with low power schottky TTL.
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Supplier: ROHM Semiconductor GmbH
Description: The BD63572MUV provides a dual H-Bridge motor driver which features wide range of motor power supply voltage from 2.0V to 9.0V and low power consumption to switch low ON-Resistance DMOS transistors at high speed. This small surface mounting package is most suitable for mobile system,
- Peak Output Current: 1 amps
- Supply Voltage: 10 volts
- Operating Temperature: -30 to 85 C
- Screening Level: Commercial
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Supplier: Win Source Electronics
Description: Transistors - FETs, MOSFETs - RF Max Frequency: 500 MHz Popularity: Medium Fake Threat In the Open Market: 73 pct. Supply and Demand Status: Limited Mount: Screw RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Element Configuration: Dual Max Power Dissipation:
- PD: 250,000 milliwatts
- TJ: -55 C
- Output Power: 250 watts
- Power Gain: 10 dB
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Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 913304-BF909AWR,115 Features: RF Mosfet N-Channel Dual Gate 5 V 15 mA 800MHz - - CMPAK-4 Package: Bulk Package: SC-82A, SOT-343 Part Status: Obsolete Categories: Discrete Semiconductor Products Case / Package: CMPAK-4 ECCN: EAR99 Popularity:
- Type: Dual Gate MOSFET
- Features: MOSFET, Other, Power MOSFET
- Polarity: N-Channel
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: RoHS: Compliant Element Configuration: Dual Max Power Dissipation: 217 W Test Current: 400 mA Continuous Drain Current (ID): 14 A Drain to Source Breakdown Voltage: 72 V Gate to Source Voltage (Vgs): 20 V Test Voltage: 28 V
- V(BR)DSS: 72 volts
- PD: 217,000 milliwatts
- TJ: 150 C
- Output Power: 217 watts
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Supplier: Infineon Technologies AG
Description: 600 V half-bridge gate driver IC with integrated bootstrap diode EiceDRIVER™ Compact - Optimized 600V half bridge gate driver IC with LS-SOI technology to control MOS-transistors Summary of Features Individual control circuits for both outputs Filtered detection of under voltage
- Peak Output Current: 0.36 amps
- Supply Voltage: 10 to 17.5 volts
- Propagation Delay: 300 ns
- Driver Type: Dual Gate Driver (Half-bridge)
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Supplier: Infineon Technologies AG
Description: 55V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package Benefits RoHS Compliant Low RDS(on) Dynamic dv/dt Rating Fast Switching Dual N and P-Channel MOSFET Applications 1-phase string inverter solutions Central inverter solutions Designers who used this product also designed
- VGS(off): 20 volts
- rDS(on): 0.05 to 0.105 ohms
- TJ: 150 C
- Features: MOSFET, Other
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Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 234827-BF1100 Packaging: Reel - TR Voltage Rating: 14V Current Rating: 30mA Frequency: 800MHz Current - Test: 10mA Transistor Polarity: N-Channel Dual Gate Voltage - Test: 9V Noise Figure: 2dB Categories: Discrete Semiconductor Products
- Features: MOSFET, Other
- Polarity: N-Channel
- Package Type: SOT3
- Packing Method: Tape Reel
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Supplier: Microchip Technology, Inc.
Description: MD1210 is a high speed, dual MOSFET driver. It is designed to drive high voltage P and N-channel MOSFET transistors for medical ultrasound and other applications requiring a high output current for a capacitive load. The high-speed input stage of the MD1210 can operate from 1.2V to
- Features: MOSFET
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Supplier: ODG (Origin Data Global)
Description: DUAL 1.5A-PEAK LOW-SIDE MOSFET D
- Features: Other
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Supplier: ODG (Origin Data Global)
Description: IGBT Modules IGBT MODULE T-SERIES STANDARD TYPE DUAL
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