-
Supplier: VAST STOCK CO., LIMITED
Description: RF JFET Transistors 4.4-5.0GHz 2x15W 50V GaN Dual Channel
- Transistor Type: JFET
-
Supplier: Linear Systems
Description: Low Leakage - Low Drift - Monolithic Dual N-Channel JFET Amplifier
- Transistor Type: JFET
-
Supplier: Solid State Devices, Inc.
Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This
- Features: Other
-
-
Description: JFET - DUAL
- Features: Bulk Pack, Other
- Transistor Type: JFET
-
Supplier: VAST STOCK CO., LIMITED
Description: JFET JFET N-Channel Dual
- Transistor Type: JFET
-
Supplier: New Jersey Semi-Conductor Products, Inc.
Description: ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET
- Transistor Type: JFET
-
Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Transistor Type: JFET
- Polarity: N-Channel
- Features: Other
-
Supplier: ODG (Origin Data Global)
Description: JFET DUAL P-CH 25V TO-78
- VGS(off): 2 volts
- TJ: -55 to 150 C
- Transistor Type: JFET
- Polarity: N-Channel
-
Supplier: RS Components, Ltd.
Description: JFET Dual N-Ch 25V 20 to 40mA 40mS CPH6
- Transistor Type: JFET
- Polarity: N-Channel
- Features: Other
-
Supplier: Win Source Electronics
Description: Win Source Part Number: 969554-CPH6904-TL-E Category: Discrete Semiconductor Products>Transistors - JFETs Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Power - Max: 700 mW Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 5 V Current
- VGS(off): 0.6 volts
- TJ: 150 C
- Transistor Type: JFET
- Polarity: N-Channel
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, JFETs. This listing supports clearer product discovery for
- Transistor Type: Bipolar RF Transistors
- Features: Other
-
Supplier: DigiKey
Description: JFET 2 N-Channel (Dual) 25V 190mW Surface Mount 6-TSSOP
- Polarity: N-Channel
- Features: Other
-
Supplier: Win Source Electronics
Description: Manufacturer: Vishay Win Source Part Number: 937968-U431 Operating Temperature Range: -55°C ~ 150°C (TJ) Features: JFET 2 N-Channel (Dual) 25 V 500 mW Through Hole TO-78-6 Package: Tube Package: TO-78-6 Metal Can Mounting: Through Hole Part Status: Obsolete Family Name: U431
- TJ: -55 to 150 C
- Transistor Type: JFET
- Polarity: N-Channel
- Features: Other
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 30V, 7.5A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, 7.5A, SOIC, MOSFET Transistor. This
- PD: 1,600 milliwatts
- TJ: -55 C
- Transistor Type: MOSFET
- Polarity: N-Channel
-
Supplier: Radwell International
Description: DISCONTINUED BY MANUFACTURER, TRANSISTOR, DUAL N-CHANNEL, JFET. FREE 2 YEAR RADWELL WARRANTY
-
Supplier: Win Source Electronics
Description: Manufacturer: Linear Integrated Systems Win Source Part Number: 923998-LSK389B SOIC 8L Series: LSK389 Operating Temperature Range: -55°C ~ 150°C (TJ) Features: JFET 2 N-Channel (Dual) 40 V 400 mW Surface Mount 8-SOIC Package: Reel - TR Package: 8-SOIC (0.154", 3.90mm Width) Mounting:
- Polarity: N-Channel
- Features: Other
- Package Type: SOT3
-
Supplier: Wolfspeed
Description: devices are suitable for 3300-3500MHz, 4900-5900MHz, 700-960MHz, 1800-2200MHz, 2500-2700MHz and extended S and C Band applications. The CGHV27015S operates from a 50 volt rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Features for 50 V
- Power Gain: 21 dB
- Output Power: 15 watts
- Operating Frequency: 6,000 MHz
- Transistor Type: HEMT
-
Supplier: Wolfspeed
Description: a 28 volt rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Features for 28 V in CGH27030S-TB1: 1.8 - 2.2 GHz Operation High degree of APD and DPD correction can be applied Features for 28 V in CGH27030S-TB2: 2.3 - 2.7 GHz Operation High
- Power Gain: 18 dB
- Output Power: 30 watts
- Operating Frequency: 6,000 MHz
- Transistor Type: HEMT
-
Supplier: Wolfspeed
Description: are based on an X-Band (8.9 – 9.6-GHz) amplifier. The CGHV1F025S operates on a 40-volt rail circuit while housed in a 3-mm x 4-mm, surface-mount, dual-flat-no-lead (DFN) package. Under reduced power, the transistor can operate below 40-V to as low as 20-V VDD, maintaining high gain and
- Power Gain: 11 dB
- Output Power: 25 watts
- Operating Frequency: 15,000 MHz
- Transistor Type: HEMT
-
Supplier: Wolfspeed
Description: with either a 50 V or 28 V rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Features for 50 V in CGHV27030S-TB1 2.5 - 2.7 GHz Operation High degree of APD and DPD correction can be applied
- Power Gain: 21 dB
- Output Power: 30 watts
- Operating Frequency: 6,000 MHz
- Transistor Type: HEMT
-
Supplier: ODG (Origin Data Global)
Description: JFET N-CH 30V 15MA SOT23
- Transistor Type: JFET, MOSFET, MOSFET RF Transistors
- Polarity: N-Channel
- Features: Other
- Package Type: SOT23
-
Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 1224907-MMBF5484LT1G Packaging: Reel - TR Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-236-3, SC-59, SOT-23-3 Mounting: SMD Power - Max: 225mW Voltage - Breakdown (V(BR)GSS): 25V Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V
- VGS(off): 0.3 volts
- TJ: -55 to 150 C
- Output Power: 0.225 watts
- Transistor Type: JFET
-
Supplier: ODG (Origin Data Global)
Description: 750V/11MOHM, N-OFF SIC STACK CAS
- V(BR)DSS: 750 volts
- IDSS: 104,000 milliamps
- PD: 357,000 milliwatts
- TJ: -55 to 175 C
-
Supplier: Rochester Electronics
Description: RF Small Signal Field-Effect Transistor, S Band, Gallium Arsenide, N-Channel JFET
- Transistor Type: JFET, MOSFET RF Transistors
- Polarity: N-Channel
- Features: Other, Tape Reel
-
Supplier: Acme Chip Technology Co., Limited
Description: JFET N-CH
- Features: Bulk Pack, Other
- Transistor Type: JFET
-
Supplier: Newark, An Avnet Company
Description: JFET/SIC DIODE CO-PACK, 1.2 kV, SOT-227; MOSFET Module Configuration:Single; Continuous Drain Current Id:50A; Drain Source Voltage Vds:1.2kV; No. of Pins:4Pins; Rds(on) Test Voltage:-; Gate Source Threshold Voltage Max:- RoHS Compliant: Yes
-
Supplier: Utmel Electronic Limited
Description: TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, 7-AA03A, 3 PIN, FET RF Power
- Transistor Type: JFET
- Polarity: N-Channel
-
Supplier: Utmel Electronic Limited
Description: RF JFET Transistors Super Lo Noise HJFET
- V(BR)DSS: 4 volts
- PD: 165 milliwatts
- TJ: -65 to 125 C
- Number of Transistors in the Chip: 1
-
Supplier: Utmel Electronic Limited
Description: TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal
- Transistor Type: JFET
- Polarity: N-Channel
-
Supplier: LCSC Electronics Technology (HK) Limited
Description: TO-92-3 JFETs ROHS
- Transistor Type: JFET
- Package Type: TO-92
-
Supplier: Utmel Electronic Limited
Description: JFET P-CH 40V 0.225W SOT23
- PD: 200 milliwatts
- Number of Transistors in the Chip: 1
- Transistor Type: JFET
- Features: Other, Tape Reel
-
Supplier: Newark, An Avnet Company
Description: TRANSISTOR, JFET, P, 30V, SOT-23; Breakdown Voltage Vbr:30V; Zero Gate Voltage Drain Current Idss Min:-1.5mA; Zero Gate Voltage Drain Current Idss Max:-20mA; Gate-Source Cutoff Voltage Vgs(off) Max:2.5V; Transistor Case Style:SOT-23;RoHS Compliant: Yes
-
Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Transistor Type: JFET
- Features: Other
-
Supplier: Newark, An Avnet Company
Description: JFET, N CHANNEL, -40V, SOT-23, FULL REEL; Transistor Polarity:N Channel; Collector Emitter Voltage Max:999V; Continuous Collector Current:999A; Power Dissipation:225mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes
-
Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Transistor Type: JFET
- Features: Other
Find Suppliers by Category Top
More Information Top
Indicates content that may require registration and/or purchase.
-
Page 5. Semiconductor parts with 439 in root number
Dual Microminiature Package 50 mA 40 Volts Dual N-Channel JFET Transistor .
-
Functional variation of dual gate MOS-JFET CCD test structure
Z.VSTRUC'TURES Figure 1 shows the overall opdcal view of the device, while Rgure 2 shows the dual gate MOS JFET test transistors .
-
Design and Implementation of a Perception-obtaining System
TL082CN is a wide bandwidth dual JFET (Junction Field Effect Transistor ) input operational amplifier, which has a quick response and uses internally trimmed input offset voltage.
-
Virtual phase technology: A new approach to fabrication of large-area CCD's
These struc- tures are dual gate MOS- JFET transistors , with cross sections as shownin Fig.lO(a).
-
Mouser Electronics, Inc.
InterFET IF1322 Matched Dual Junction Field-Effect Transistor ( JFET .
-
Dual charge integrating amplifier circuit using two GaInAs-InP pin photodiodes for ultraweak light detection in the near infrared region
The two source electrodes of the dual junction field-effect tran- sistor ( JFET ) are connected to a differential amplifier so that their photocurrents corresponding to the background radiation noises can be subtracted.
-
Low power proximity electronics for dust analysers based on light scattering
The amplifier is in fact based on two LF411 JFET OpAmps and on the matched dual transistor MAT01 by Analog Devices, necessary to achieve a good thermal stability.
-
A High Signal-to-Noise Oscillator for Contactless Measurement of Photoinduced Carrier Lifetimes
The preamplifier input transistors are a matched JFET pair ( dual 2N5163.
-
Wide-band current preamplifier for conductance measurements with large
input capacitance
Recently, Vandersypen et al. developed a current preamplifier based on a dual low-noise junction field ef- fect transistor ( JFET ) with the open-loop gain of about .
-
High frequency interference effects in amplifiers for biopotential recordings
A bipolar differentialstage built with two 2N3904 transistors and a differential stage built with the dual JFET U406 have been submittedto a 10MHz signal.