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Supplier: Newark, An Avnet Company
Description: N-Channel Enhancement Mode Field Effect Transistor / REEL
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Supplier: Nexperia B.V.
Description: P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line transformer drivers. Features and benefits Low RDS(on) Direct interface to C-MOS, TTL,etc. High-speed switching No secondary breakdown
- Features: Other
- Package Type: SOT223
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Supplier: Nexperia B.V.
Description: N-channel enhancement mode vertical D-MOS transistor in a SOT223 package, intended for use as a surface-mounted device in line current interrupters in telephone sets and for application in relay, high speed and line transformer drivers. Features and benefits Direct interface to C-MOS,
- Features: Other
- Package Type: SOT223
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Supplier: Littelfuse, Inc.
Description: Enhancement Mode
- V(BR)DSS: 1,700 volts
- IDSS: 6,200 milliamps
- TJ: 175 C
- MOSFET Operating Mode: Enhancement
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Supplier: Utmel Electronic Limited
Description: BSH108 Series 30 V 120 mOhm 0.83 W N-Channel Enhancement Mode Transistor -SOT-23
- Polarity: N-Channel
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Supplier: Utmel Electronic Limited
Description: BSH202 Series 30 V 0.9 Ohm 417 mW P-Channel Enhancement MOS Transistor - SOT-23
- Polarity: P-Channel
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Supplier: Microchip Technology, Inc.
Description: TP5335 is a low threshold enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high
- VGS(off): -2.4 volts
- rDS(on): 30 ohms
- Features: MOSFET
- Polarity: P-Channel
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Supplier: Utmel Electronic Limited
Description: N-Channel Enhancement Mode MOSFET SOIC8
- V(BR)DSS: 30 volts
- PD: 1,420 milliwatts
- TJ: -55 to 150 C
- Number of Transistors in the Chip: 1
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Supplier: Microchip Technology, Inc.
Description: These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative
- VGS(off): -1 volts
- rDS(on): 1.5 ohms
- Features: MOSFET
- Polarity: P-Channel
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Supplier: Newark, An Avnet Company
Description: P-CHANNEL ENHANCEMENT MODE MOSFET, SOT-23
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Supplier: Utmel Electronic Limited
Description: MOSFET 30V Enhancement Mode
- V(BR)DSS: 30 volts
- rDS(on): 0.05 ohms
- PD: 1,250 milliwatts
- TJ: -55 to 150 C
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Supplier: Microchip Technology, Inc.
Description: 2N7002 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and
- Polarity: N-Channel
- Package Type: SOT23
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Supplier: Microchip Technology, Inc.
Description: This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance
- VGS(off): -2.4 volts
- rDS(on): 8 ohms
- Features: MOSFET
- Polarity: P-Channel
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Supplier: Texas Instruments
Description: Single P-channel Enhancement-Mode MOSFET 8-SOIC
- Features: MOSFET
- Polarity: P-Channel
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Supplier: Texas Instruments
Description: Single P-channel Enhancement-Mode MOSFET 16-TSSOP
- Features: MOSFET
- Polarity: P-Channel
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Supplier: Nexperia B.V.
Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits Direct interface to
- Features: Other
- Package Type: SOT223
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP
- V(BR)DSS: 10 volts
- IDSS: 3 milliamps
- rDS(on): 500 ohms
- TJ: 0 to 70 C
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Complementary Enhanced
- Features: Bipolar RF Transistors
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 4 P-Channel, Matched Pair 8V - 500mW Surface Mount 16-SOIC
- V(BR)DSS: -8 volts
- IDSS: -1.65 milliamps
- rDS(on): 1,250 ohms
- TJ: 0 to 70 C
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 4 N-Channel, Matched Pair 10.6V 12mA, 3mA 500mW Surface Mount 16-SOIC
- V(BR)DSS: 10 volts
- IDSS: 3 milliamps
- rDS(on): 500 ohms
- TJ: 0 to 70 C
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Supplier: Allied Electronics, Inc.
Description: N-Channel Transistor Type, 200 W Power Dissipation, Insulated Gate Bipolar Transistor High input impedance High speed Low saturation voltage High power switching and motor control applications
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Supplier: Allied Electronics, Inc.
Description: N Channel Enhancement Mode Switches
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Supplier: Allied Electronics, Inc.
Description: N-Channel Transistor Type, 200 W Power Dissipation, Insulated Gate Bipolar Transistor High input impedance High speed Low saturation voltage High power switching and motor control applications
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Supplier: Allied Electronics, Inc.
Description: Enhancement Mode MOSFET, N-Channel, 40 Milliohms (Typ.) High speed switch
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Supplier: Nexperia B.V.
Description: N-channel enhancement mode MOSFET in a CCPAK1212 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R4-100ASE delivers very low RDSon and enhanced safe operating area performance in a high-reliability copper-clip package
- MOSFET Operating Mode: Enhancement
- Features: MOSFET, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs,
- PD: 300 milliwatts
- MOSFET Operating Mode: Enhancement
- Features: MOSFET, Other
- Polarity: N-Channel
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Supplier: Win Source Electronics
Description: Manufacturer: Microchip Technology Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1103950-VN2222NC Power Dissipation: 1 W Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 55 pct. Supply and Demand
- V(BR)DSS: 220 volts
- rDS(on): 1.25 ohms
- PD: 1,000 milliwatts
- MOSFET Operating Mode: Enhancement
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Supplier: Win Source Electronics
Description: Manufacturer: Diodes Incorporated Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 965930-DMG1023UV-13 Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Shortage
- MOSFET Operating Mode: Enhancement
- Features: MOSFET
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Central Semiconductor Corp Win Source Part Number: 1162321-CMKDM8005 Manufacturer Homepage: www.centralsemi.com Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
- MOSFET Operating Mode: Enhancement
- Features: MOSFET
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Panjit Win Source Part Number: 1238571-PJX8802 Manufacturer Homepage: www.panjit.com.tw Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance
- MOSFET Operating Mode: Enhancement
- Features: MOSFET
- Package Type: SOT3
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Supplier: Wolfspeed
Description: Wolfspeed introduces its latest breakthrough in SiC power device technology with the industry’s only 1kV SiC MOSFET in a newly optimized package suitable for fast switching devices. Optimized for electric-vehicle charging systems, and three-phase industrial power supplies, the new 1kV device
- Features: MOSFET, Other
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Supplier: Wolfspeed
Description: Wolfspeed extends its leadership in SiC technology by introducing two new 1700V SiC discrete MOSFETs in optimized packing with wide creepage and clearance distance between drain and source (~8mm) thereby providing extra electrical isolation suitable for high pollution environments. The package
- Features: MOSFET, Other
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Supplier: Richardson RFPD
Description: N-Channel Enhancement-Mode Lateral MOSFETs. RF power transistors designed for applications operating at frequencies from 900 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and DME.
- Power Gain: 20 dB
- Output Power: 1,000 watts
- Operating Frequency: 965 to 1,215 MHz
- Features: Other
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Supplier: ODG (Origin Data Global)
Description: MOSFET 20V P-Channel Enhancement Mode MOSFET
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TO-3P/220/247/254/257/258/264 Aluminum Nitride Ceramic Thermal Pads For MOSFET Transistor IGBT Transistor Heat Sink
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Performance Characteristics of EPAD (R) Precision Matched Pair MOSFET Array
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
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