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Supplier: Littelfuse, Inc.
Description: Enhancement Mode
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: TP5335 is a low threshold enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high
- Package Type: SOT23
- Polarity: P-Channel
- Transistor Type: MOSFET
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Supplier: Littelfuse, Inc.
Description: Industrial grade, single switch SiC mosfets built in a 4 connectors, UL certified SOT227B package providing 3000V isolation (1s). Featuring a kelvin connection pin, and exhibiting good power cycling characteristics, and a very fast a low losses switching behaviour, these mosfets are recommend for
- Transistor Type: MOSFET
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Supplier: Littelfuse, Inc.
Description: Industrial grade, single switch SiC mosfet built in a 4 connectors, UL certified SOT227B package providing 3000V isolation (1s). Featuring a kelvin connection pin, and exhibiting good power cycling characteristics, and a very fast and low losses switching behaviour, this mosfets is recommend for use
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Littelfuse, Inc.
Description: Industrial grade, single switch SiC mosfets built in a TO268 high voltage package with extra clearance and creepage for harsh, dirty industrial environmental conditions.
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature
- Package Type: TO-92
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative
- Package Type: TO-92
- Polarity: P-Channel
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive
- Package Type: TO-92
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Enhanced
- Transistor Type: Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: MOSFET 30V Enhancement Mode
- Polarity: N-Channel, P-Channel, Other
- Transistor Type: MOSFET
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Supplier: Texas Instruments
Description: Single P-channel Enhancement-Mode MOSFET 8-SOIC
- Polarity: P-Channel
- Transistor Type: MOSFET
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Supplier: Radwell International
Description: TRANSISTOR HIGH SPEED POWER ENHANCEMENT. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Utmel Electronic Limited
Description: RF MOSFET Transistors TAPE-7 MOS-RFSS
- Noise Figure: 1.3 dB
- Number of Transistors in the Chip: 2
- Operating Mode: Enhancement, Other
- PD: 180 milliwatts
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Supplier: Nexperia B.V.
Description: N-channel enhancement mode MOSFET in a CCPAK1212 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMNR90-80ASE delivers very low RDSon and enhanced safe operating area performance in a high-reliability copper
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Utmel Electronic Limited
Description: INFINEON AUIRF9Z34N MOSFET Transistor, P Channel, -19 A, -55 V, 0.1 ohm, -10 V, -2 V
- MOSFET Operating Mode: Enhancement, Other
- Number of Transistors in the Chip: 1
- PD: 68000 milliwatts
- TJ: -55 to 175 C
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Supplier: Wolfspeed
Description: Wolfspeed introduces its latest breakthrough in SiC power device technology with the industry’s only 1kV SiC MOSFET in a newly optimized package suitable for fast switching devices. Optimized for electric-vehicle charging systems, and three-phase industrial power supplies, the new 1kV device
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Richardson RFPD
Description: N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 170 mA, 6O
- Transistor Type: MOSFET, Power MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: Darlington Transistors NPN Enhanced Darlington
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Supplier: Win Source Electronics
Description: Manufacturer: GTM CORPORATION Win Source Part Number: 266016-G2305 Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient
- Operating Mode: Enhancement
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Taiwan Semiconductor Win Source Part Number: 1274791-TSM2302 Manufacturer Homepage: www.taiwansemi.com Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited
- MOSFET Operating Mode: Enhancement
- Package Type: SOT3
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Supplier: Rochester Electronics
Description: 600V CoolGaN enhancement-mode Power Transistor
- Operating Mode: Enhancement
- Package Type: Other
- Packing Method: Tape Reel, Other
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Description: P-CHANNEL ENHANCEMENT MODE MOSFE
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Acme Chip Technology Co., Limited
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: ODG (Origin Data Global)
Description: MOSFET 20V P-Channel Enhancement Mode MOSFET
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Supplier: Rochester Electronics
Description: A3T21H450W23SR6 - RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET
- MOSFET Operating Mode: Enhancement
- Package Type: Other
- Packing Method: Tape Reel, Other
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Supplier: Rochester Electronics
Description: N-Channel Enhancement-Mode Transistor
- Package Type: TO-220, Other
- Polarity: N-Channel
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Supplier: Richardson RFPD
Description: N-Channel Enhancement-Mode Lateral MOSFETs. RF power transistors designed for applications operating at frequencies from 900 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and DME.
- Operating Frequency: 960 to 1215 MHz
- Output Power: 275 watts
- Package Type: Other
- Power Gain: 20.3 dB
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Supplier: Win Source Electronics
Description: Rad Hardened: No Package Type: VS Polarity: N Number of Elements: 2 Power Dissipation: 1.35(W) Continuous Drain Current: 3(A) Gate-Source Voltage (Max): ±12(V) Channel Mode: Enhancement Drain-Source On-Volt: 20(V) Drain-Source On-Res: 0.049(ohm) Popularity: Low Fake Threat In the Open Market:
- Polarity: Other
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Bipolar RF Transistors - Discrete Semiconductor Products - Transistors - Bipolar (BJT) -- BUZ11S2537Supplier: Acme Chip Technology Co., Limited
Description: N CHANNEL ENHANCEMENT-MODE TRANS
- Packing Method: Bulk Pack, Other
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Supplier: Nexperia B.V.
Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching
- MOSFET Operating Mode: Enhancement
- Package Type: Other
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Supplier: Infineon Technologies AG
Description: The GS66516B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66516B-MR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case
- Package Type: Other
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Supplier: Richardson RFPD
Description: capability as compared to the previous generations of chip technology. Highly insulated housings offer enhanced protection by means of greater creepage and strike clearance distance for many demanding applications like medium voltage drives and auxiliary traction. All components and
- Package Type: Other
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Supplier: VAST STOCK CO., LIMITED
Description: IGBT Transistors To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control l
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Supplier: RS Components, Ltd.
Description: N-Channel Enhancement MOSFET SOT-23 - Discrete Semiconductors - MOSFET Transistors
- Package Type: SOT23, Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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