Fast Switching Pin Diodes

Description: The SemiGen SGP7000 series of PIN Diodes are processed with a high-resistivity epi that have intrinsic layers that range in thickness from 4 micron to 200 micron depending on performance specifications. These devices are typically manufactured with either a robust thermal-oxide

• Features: Other, PIN Diodes, Switching

Description: The SemiGen SGP7000 series of PIN Diodes are processed with a high-resistivity epi that have intrinsic layers that range in thickness from 4 micron to 200 micron depending on performance specifications. These devices are typically manufactured with either a robust thermal-oxide

• Features: Other, PIN Diodes, Switching

Description: applications from 10 MHz to more than 10 GHz. The short carrier lifetime of 100 ns (typical), combined with their thin I-region width of 5 μm (nominal) results in a group of fast speed RF switching PIN diodes. The RF performance of the SMP1340 series is assured by virtue

• Features: PIN Diodes

Description: DIODE, RF, FAST SWITCHING, DUAL; Diode Configuration:Dual Series; Resistance @ If:0.6ohm; Breakdown Voltage Vbr:50V; Diode Case Style:SOT-23; No. of Pins:3 Pin; Total Capacitance Ct:0.8pF; Forward Current If(AV):1A; Operating RoHS Compliant: Yes

Description: Silicon PIN Diode Summary of Features Series diode for mobile communication in low loss transmit-receiver switches Band switch for TV-tuners Very low forward resistance (typ. 0.65 Ω @ 5 mA) Low capacitance (typ. 0.5 pF @ 0V) Fast switching applications Pb-free

• I_F: 100 mA
• VR: 30 volts
• t_rr: 80 ns
• Features: Other, PIN Diodes, RF Diodes, Single

Description: The SemiGen SBL 2000 series Beam Lead Pin Diodes feature fast switching speeds at both low capacitance and resistance. Beam Lead Pin Diodes have high levels of mechanical strength and stability during assembly. These diodes are suitable for microstrip

• P_D: 250 milliwatts
• Features: PIN Diodes, Switching

Description: Fast Switching Speed, Low Capacitance, Plastic Packaged PIN Diodes

• VR: 50 volts
• Operating Frequency: 10 to 2,000 MHz
• C_T: 0.3 pF
• Features: PIN Diodes, RF Diodes

Description: The SMP1371-087LF is a surface mountable PIN diode suitable for use in an RF switch or attenuator circuit. Maximum resistance at 10 mA is 0.5 Ω and maximum capacitance at 20 V is 1.2 pF. The combination of low capacitance, low parasitic inductance, low thermal resistance, and nominal

• Features: PIN Diodes

Description: Skyworks’ Silicon Mesa Beam Lead PIN diode is surrounded by a glass frame for superior strength and electrical performance that surpasses the standard beam lead PINs. The DSM8100-000 is designed for low resistance, low capacitance and fast switching time. The

• Features: Limiter, PIN Diodes

Description: technology resulting in PIN diodes with tightly controlled I-region characteristics. The low capacitance and low resistance of the APD0505 through APD1520 diodes are ideal for switch applications that require insertion loss and fast switching speed. For switch or

• Features: PIN Diodes

Description: FAST SWITCH DIODE, 1A, 400V, AXIAL; Repetitive Peak Reverse Voltage:400V; Average Forward Current:1A; Diode Configuration:Single; Forward Voltage Max:1.3V; Reverse Recovery Time:30ns; Forward Surge Current:150A; No. of Pins:2Pins RoHS Compliant: Yes

Description: ROHM's PIN diodes are available in lineup as switching type for mobile and wireles LAN, and as attenuator type for tuner.

• V_F: 1 volts
• I_F: 500 mA
• VR: 100 volts
• T_j: -55 to 150 C

Description: FAST SWITCH DIODE, 1A 600V DO-204AL; Repetitive Peak Reverse Voltage:600V; Average Forward Current:1A; Diode Configuration:Single; Forward Voltage Max:1.2V; Reverse Recovery Time:200ns; Forward Surge Current:30A; No. of Pins:2 Pin RoHS Compliant: Yes

Description: FAST SWITCH DIODE, 3A 600V DO-214AB; Repetitive Peak Reverse Voltage:600V; Average Forward Current:3A; Diode Configuration:Single; Forward Voltage Max:1.3V; Reverse Recovery Time:250ns; Forward Surge Current:100A; No. of Pins:2Pins RoHS Compliant: Yes

Description: significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. Features: Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at

Description: Diode Ultra Fast Recover 1KV 2-Pin DO41

• t_rr: 75 ns
• Features: Other, Rectifier Diode, Schottky Barrier Diodes, Switching
• RoHS Compliant: RoHS Compliant

Description: SWITCH-MODE POWER RECTIFIER, 20 AMP, 200 V, REVERSE RECOVERY TIME: 35 NS, FORWARD SURGE CURRENT: 100 AMP, 3 PIN, FAST/ULTRAFAST, THROUGH HOLE . FREE 2 YEAR RADWELL WARRANTY

• Features: General Purpose (PN Junction Diodes)

Description: Kelvin Emitter for improved switching performance Temperature sensor Easy paralleling Low on-resistance Fast switching speed Fast recovery body diode Convex shaped substrate for superior thermal contact Compact housing CTI600 housing material Thermo-mechanical

• Output Voltage: 1,200 volts
• Output Current: 50 amps
• Configuration: H-Bridge
• Features: Other / Specialty Technology

Description: Kelvin Emitter for improved switching performance Integrated DC capacitor Open Emitter configuration Temperature sensor Easy paralleling Low on-resistance Fast switching speed Fast recovery body diode Clip-in, reliable mechanical connection, qualified for wave

• Output Voltage: 1,200 volts
• Output Current: 40 amps
• Configuration: H-Bridge
• Features: Other / Specialty Technology

Description: Fast Switching Speed, Low Capacitance Plastic Packaged PIN Diodes Product overview: SMP1340-079 from Alpha Industries is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It

• Features: Rectifier Diode

Description: broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching

• Frequency Range: 0 to 6,000 MHz
• Insertion Loss: 0.4 to 1.2 dB
• Isolation (Port to Port): 19 to 43 dB
• Impedance: 75 ohms

Description: broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching

• Frequency Range: 0 to 50,000 MHz
• Insertion Loss: 0.1 to 2 dB
• Isolation (Port to Port): 22 to 70 dB
• Impedance: 75 ohms

Description: broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching

• Frequency Range: 0 to 50,000 MHz
• Insertion Loss: 0 to 53 dB
• Isolation (Port to Port): 18 to 85 dB
• Impedance: 75 ohms

Description: Ultra fast low-loss rectifier / Diode Switching 200V 2A 2-Pin MELF Product overview: BYD127 from NXP Semiconductors is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is

• Features: Rectifier Diode

Description: Fast soft-recovery controlled avalanche rectifiers / Diode Switching 600V 1A 2-Pin SMA Product overview: BYG70J from NXP Semiconductors is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic

• Features: Rectifier Diode

Description: Rectifier Diode Switching 400V 1A 1500ns 2-Pin DO-15 / HIGH SPEED RECTIFIER APPLICATIONS.(FAST RECOVERY) Product overview: 1S1834 from Toshiba Electronic Devices and Storage Corporation is a Diode and Rectifier for rectification, reverse-polarity protection, signal

• Features: Rectifier Diode

Description: required. The high electron mobility of AlGaAs and the low capacitance of the PIN diodes used makes this switch ideal for fast response, high frequency, multi-throw switch designs. AlGaAs PIN diode switches are an ideal choice for switching arrays in radar

• Frequency Range: 50 to 67,000 MHz
• Insertion Loss: 0.7 dB
• Isolation (Port to Port): 33 dB
• Switching Speed: 0.00002 ms

Description: Wolfspeed's E-Series diodes are specifically designed to be robust and relibale in the harshest environments. As a result, the E-Series diodes are the industry's first 1200V SiC diodes to be automotive qualified and high-humidity/high-voltage/high-temperature tested. The

• V_RRM: 1,200 volts
• Features: Other, Schottky Barrier Diodes

Description: independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM. Features and benefits Zero forward and reverse recovery Temperature

• V_F: 1.8 volts
• I_R: 60,000 mA
• V_RRM: 650 volts
• I_FSM: 440 amps

Description: capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM. Features and benefits Zero forward and reverse recovery Reduced system cost

• V_F: 1.8 volts
• I_R: 180,000 mA
• V_RRM: 650 volts
• I_FSM: 780 amps

Description: capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM. Features and benefits Zero forward and reverse recovery Temperature independent

• V_F: 1.8 volts
• I_R: 180,000 mA
• V_RRM: 1,200 volts
• I_FSM: 710 amps

Description: appropriate filter and switch technologies to achieve the best overall performance. This includes design options such as MMIC FET switches for fast switching requirements, discrete PIN diode switches for high isolation, or may involve multiple filter topologies or using

• Frequency (Fc): 10,000 MHz
• Bandwidth: 2,000,000 kHz
• Package Type: Connectorized
• Features: Other

Description: Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The Merged PiN Schottky (MPS) diode delivered as bare die in Tape and Reel (T & R) offers temperature independent capacitive

• V_F: 1.8 volts
• I_R: 180,000 mA
• V_RRM: 650 volts
• I_FSM: 650 amps

Description: Current controlled input pin Improved electromagnetic compatibility (EMC) Fast demagnetization of inductive loads Stable behavior at under-voltage Green Product (RoHS compliant) AEC Qualified Benefits High load current capability High inrush current capability High energy capability

• t_ON: 500,000 ns
• t_OFF: 500,000 ns
• Operating Ambient Temperature: -40 to 150 C
• Features: Other

Description: protection is from the IN (pins 1-7 and 9-15) to V+ or V-. The SCR structures are designed for fast triggering at a threshold of one +VBE diode threshold above V+ (Pin 16) or a -VBE diode threshold below V- (Pin 8). From an IN input, a clamp to V+ is

• VR: 30 volts
• C_T: 3 pF
• Features: Array, Bidirectional
• Diode Type: General Purpose (PN Junction Diodes), Transient Voltage Suppressor Diodes (TVS)