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Supplier: Newark, An Avnet Company
Description: DIODE 1N100, GERMANIUM ROHS COMPLIANT: NO
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, MIXER TYPE 1N263
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, TYPE JAN 1N933
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, GERMANIUM TYPE JAN-1N198M
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, R-F MIXER TYPE 1N2792
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Supplier: Allied Electronics, Inc.
Description: 60 mA Forward current, 100 uA Reverse Current, General Purpose Germanium Diode Fast switching Forward voltage drop 1.0 V
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Germanium Diode Optimized for Radio Frequency Response Product overview: 1N270 from NTE Electronics, Inc. is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers
- Features: Rectifier Diode
- RoHS Compliant: RoHS Compliant
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: GOLD BONDED GERMANIUM DIODES
- Features: Rectifier Diode
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Supplier: Radwell International
Description: RECTIFIER DIODE, 1 PHASE, 1 ELEMENT, 0.2A, 100V V(RRM), GERMANIUM, DO-7. FREE 2 YEAR RADWELL WARRANTY
- Features: General Purpose (PN Junction Diodes)
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1368159-PMEG150G20ELPX Category: Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) Mfr: Nexperia USA Inc. Package: Tape & Reel Product Status: Active Package / Case: SOD-128
- VF: 0.85 volts
- VR: 150 volts
- IR: 0.03 mA
- trr: 14 ns
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Supplier: Rochester Electronics
Description: 120 V, 1 A Silicon Germanium (SiGe) rectifier
- Features: Other, Rectifier Diode
- RoHS Compliant: RoHS Compliant
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Amplifier and Comparator Chips - RF - Low Noise Amplifier LNA ICs - GNSS LNAs - BGA824N6 -- BGA824N6Supplier: Infineon Technologies AG
Description: in Chapter 3 (see datasheet). The BGA824N6 is based upon Infineon Technologies‘ B7HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. Summary of Features High insertion power gain: 17.0 dB Out-of-band input 3rd order intercept point: +7 dBm Input 1 dB compression
- Features: Other
- Standards and Certifications: RoHS Compliant
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Amplifier and Comparator Chips - RF - Low Noise Amplifier LNA ICs - GNSS LNAs - BGA855N6 -- BGA855N6Supplier: Infineon Technologies AG
Description: and 0.6 dB noise figure at a current consumption of 4.8mA. The BGA855N6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from 1.1 V to 3.3 V supply voltage. Summary of Features GPS LNA for L2/L5 Frequency Improves GPS accuracy into cm range (~30 cm) Improves
- Features: Other
- Standards and Certifications: RoHS Compliant
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Supplier: Infineon Technologies AG
Description: Designers who used this product also designed with DPS368 | Pressure sensors for IoT ESD106-B1-W0201 | Low capacitance diodes for ESD protection BFP843F | Low Noise RF Transistors DPS368 | Pressure sensors for IoT ESD106-B1-W0201 | Low capacitance diodes for ESD protection BFP843F |
- Features: Other
- Standards and Certifications: RoHS Compliant
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Amplifier and Comparator Chips - RF - Low Noise Amplifier LNA ICs - GNSS LNAs - BGA725L6 -- BGA725L6Supplier: Infineon Technologies AG
Description: described. The BGA725L6 is based upon Infineon Technologies‘ B7HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. Summary of Features High insertion power gain: 20.0 dB Out-of-band input 3rd order intercept point: -2 dBm Input 1 dB compression point: -15 dBm Low
- Features: Other
- Standards and Certifications: RoHS Compliant
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Supplier: Thorlabs, Inc.
Description: aspheric, and cylindrical lenses, both with and without antireflection coatings deposited on the surfaces. Choose from various substrates, including N-BK7, UV fused silica, calcium fluoride, magnesium fluoride, zinc selenide, germanium, and silicon. In addition, Thorlabs also offers Axicons
- Focal Length: -100 to 9.65 mm
- Diameter / Length: 2 to 25.399986284007408 mm
- Center Thickness: 0.8800000000000001 to 36 mm
- Edge Thickness: 1.45 to 200 mm
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Supplier: Thorlabs, Inc.
Description: aspheric, and cylindrical lenses, both with and without antireflection coatings deposited on the surfaces. Choose from various substrates, including N-BK7, UV fused silica, calcium fluoride, magnesium fluoride, zinc selenide, germanium, and silicon. In addition, Thorlabs also offers Axicons
- Focal Length: 1.85 to 1.99 mm
- Diameter / Length: 1.8 mm
- Center Thickness: 4.260000000000001 to 5.59 mm
- Lens Features: Antireflection Coating
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Supplier: Shanghai Optics
Description: manufactures high quality laser optics components and assemblies for a variety of laser system needs including CO2 lasers, high power fiber lasers, solid state lasers, laser diodes, etc. Shanghai Optics delivers high performance laser lenses covering wavelengths from UV to visible to near
- Features: Other
- Lens Application: Ultraviolet, Visible
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Electronics for Guitarists
Almost any diode may be used, with 1N4148, 1N914, 1N400x, or germanium diodes ( 1N34 or similar) being very common.
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Electronics for Guitarists
If you feel like experimenting with this circuit, it might be interesting to try using germanium diodes ( 1N34 or similar), or perhaps LEDs.
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http://www.thescipub.com/pdf/10.3844/ajeassp.2008.12.15
DISCUSSION Receiver development: The development of the receiver starts with the use of Germanium Diode ( 1N34 ), 100nF and 1 µF capacitors.
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http://dspace.mit.edu/bitstream/handle/1721.1/44467/30567475-MIT.pdf?sequence=2
F-11 12-Mcps Pulse Phase Detector of Phase Mieasuringp Unit The phase detector of the 12-mcps phase measuring unit was built around a 604 triode phase splitter and a pair of 1N34 germanium diodes .
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Take-home laboratory for a course in radiometry
1N34 Germanium diode (wide black cathode stripe) (RS 276-1123) 1 .
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A zero-power radio receiver.
The 1N34 germanium diode is a demodulating detector that removes the amplitude modulation from the radio carrier frequency.
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Efficient wireless power delivery for biomedical implants
Using 1N34 germanium diodes as a bridge rectifier resulted in minimum voltage drop.
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Hardware-fitted modeling and simulation of VoIP over a wireless LAN
First, two wireless laptops are configured with the RF sniffer devices (a scope probe across a loop of wire in series with a 1N34 germanium diode ) and each connected to a separate channel on the oscilloscope.
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Electronics from the Ground Up: Learn by Hacking, Designing, and Inventing > Components and Schematics
Common part numbers for germanium diodes are 1N34 , 1N60, and 1N270.
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Abstracts and References
The meter makes use of the 1N34 germanium crystal diode , thus avoiding the necessity of power sup- plies and eliminating the triode amplifier stage.