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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, TYPE JAN 1N933
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, MIXER TYPE 1N263
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, GERMANIUM TYPE JAN-1N198M
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Supplier: Accuris
Description: ELECTRON TUBE, GERMANIUM DIODE FOR COMPUTER APPLICATION JAN-1N276
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: GERMANIUM GOLD BONDED DIODES
- Diode Applications: Rectifier Diode
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: GOLD BONDED GERMANIUM DIODES
- Diode Applications: Rectifier Diode
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Supplier: Radwell International
Description: RECTIFIER DIODE, 1 PHASE, 1 ELEMENT, 0.2A, 100V V(RRM), GERMANIUM, DO-7. FREE 2 YEAR RADWELL WARRANTY
- Diode Type: General Purpose (PN Junction Diodes)
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Supplier: Radwell International
Description: DISCONTINUED BY MANUFACTURER, RECTIFIER DIODE, 1 PHASE, 1 ELEMENT, 0.05A, 60V V(RRM), GERMANIUM, DO-7. FREE 2 YEAR RADWELL WARRANTY
- Diode Type: General Purpose (PN Junction Diodes)
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Supplier: Rochester Electronics
Description: PMEG150G10ELR - 150 V, 1 A Silicon Germanium (SiGe) rectifier
- Diode Applications: Rectifier Diode
- RoHS Compliant: Yes
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Supplier: Rochester Electronics
Description: PMEG120G10ELR - 120 V, 1 A Silicon Germanium (SiGe) rectifier
- Diode Applications: Rectifier Diode
- RoHS Compliant: Yes
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Supplier: Rochester Electronics
Description: PMEG150G10ELR - 150 V, 1 A Silicon Germanium (SiGe) rectifier
- Diode Applications: Rectifier Diode
- RoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1366986-PMEG120G10EL RX Category: Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) Mfr: Nexperia USA Inc. Package: Tape & Reel Product Status: Active
- IR: 0.0300 mA
- Tj: 175 C
- VF: 0.8400 volts
- VR: 120 volts
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1366969-PMEG120G20EL RX Category: Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes Fake Threat In the Open Market: 54 pct. MSL Level: 1 (Unlimited) Mfr: Nexperia USA Inc. Package: Tape & Reel Product Status: Active
- IR: 0.0300 mA
- Tj: 175 C
- VF: 0.8400 volts
- VR: 120 volts
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1368159-PMEG150G20EL PX Category: Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) Mfr: Nexperia USA Inc. Package: Tape & Reel Product Status: Active
- IR: 0.0300 mA
- Tj: 175 C
- VF: 0.8500 volts
- VR: 150 volts
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1367726-PMEG200G30EL PX Category: Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes Fake Threat In the Open Market: 54 pct. MSL Level: 1 (Unlimited) Mfr: Nexperia USA Inc. Series: Automotive, AEC-Q101 Package: Tape
- IR: 0.0300 mA
- Tj: 175 C
- VF: 0.8800 volts
- VR: 200 volts
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Amplifier and Comparator Chips - RF - Low Noise Amplifier LNA ICs - GNSS LNAs - BGA824N6 -- BGA824N6Supplier: Infineon Technologies AG
Description: described in Chapter 3 (see datasheet). The BGA824N6 is based upon Infineon Technologies‘ B7HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. Summary of Features High insertion power gain: 17.0 dB Out-of-band input 3rd order intercept
- Package Type: Other
- RoHS Compliant: Yes
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Amplifier and Comparator Chips - RF - Low Noise Amplifier LNA ICs - GNSS LNAs - BGA855N6 -- BGA855N6Supplier: Infineon Technologies AG
Description: provides 17.8 dB gain and 0.6 dB noise figure at a current consumption of 4.8mA. The BGA855N6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from 1.1 V to 3.3 V supply voltage. Summary of Features GPS LNA for L2/L5 Frequency
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: Infineon Technologies AG
Description: Designers who used this product also designed with DPS368 | Pressure sensors for IoT ESD106-B1-W0201 | Low capacitance diodes for ESD protection BFP843F | Low Noise RF Transistors DPS368 | Pressure sensors for IoT ESD
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: RS Components, Ltd.
Description: kΩ) inputs. Min/Max function records level fluctuations. Diode test for testing general purpose germanium, silicon, and power diodes . Integral holster with probe holders for easy storage. Auto and Manual ranging. 9999 μF capacitance measurement. Category CAT III 600 V and
- AC Voltage Range: 600 volts
- Capacitance Range: 9999 microF
- DC Voltage Range: 600 volts
- Electrical Measurements: Continuity Check, Diode Test, True RMS Measurement
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Supplier: RS Components, Ltd.
Description: kΩ) inputs. Min/Max function records level fluctuations. Diode test for testing general purpose germanium, silicon, and power diodes . Integral holster with probe holders for easy storage. Auto and Manual ranging. 9999 μF capacitance measurement. Category CAT III 600 V and
- AC Voltage Range: 600 volts
- Capacitance Range: 9999 microF
- DC Voltage Range: 600 volts
- Electrical Measurements: Continuity Check, Diode Test, True RMS Measurement
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Supplier: RS Components, Ltd.
Description: kΩ) inputs. Min/Max function records level fluctuations. Diode test for testing general purpose germanium, silicon, and power diodes . Integral holster with probe holders for easy storage. Auto and Manual ranging. 9999 μF capacitance measurement. Category CAT III 600 V and
- AC Voltage Range: 600 volts
- Capacitance Range: 9999 microF
- DC Voltage Range: 600 volts
- Electrical Measurements: Continuity Check, Diode Test, True RMS Measurement
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Amplifier and Comparator Chips - RF - Low Noise Amplifier LNA ICs - GNSS LNAs - BGA725L6 -- BGA725L6Supplier: Infineon Technologies AG
Description: vehicles (LEV) Designers who used this product also designed with BSC098N10NS5 | N-Channel Power MOSFET IRS2186S | Gate driver ICs ICE3RBR1765JG | CoolSET™ Fixed Frequency ESD131-B1-W0201 | Low capacitance diodes
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: Shanghai Optics
Description: Laser Focusing Lenses A collimating lens, shown in Figure 1, is a lens which is used to generate a collimated laser beam from a laser source. The focal length of a laser collimating lens can be determined based on the laser divergence angle (FWHM) and the required laser beam diameter. A laser
- Lens Application: Visible, Ultraviolet
- Lens Type: Other
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Supplier: Thorlabs, Inc.
Description: spherical, achromatic, aspheric, and cylindrical lenses, both with and without antireflection coatings deposited on the surfaces. Choose from various substrates, including N-BK7, UV fused silica, calcium fluoride, magnesium fluoride, zinc selenide, germanium, and silicon. In addition,
- Antireflection Coating: Yes
- Diameter / Length: 2 to 25.4 mm
- Focal Length: -100 to 9.65 mm
- Lens Application: Infrared, Visible, Ultraviolet
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Supplier: Thorlabs, Inc.
Description: spherical, achromatic, aspheric, and cylindrical lenses, both with and without antireflection coatings deposited on the surfaces. Choose from various substrates, including N-BK7, UV fused silica, calcium fluoride, magnesium fluoride, zinc selenide, germanium, and silicon. In addition,
- Antireflection Coating: Yes
- Diameter / Length: 1.8 mm
- Focal Length: 1.85 to 1.99 mm
- Lens Type: Gradient Index Lens
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Electronics for Guitarists
Almost any diode may be used, with 1N4148, 1N914, 1N400x, or germanium diodes ( 1N34 or similar) being very common.
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Electronics for Guitarists
If you feel like experimenting with this circuit, it might be interesting to try using germanium diodes ( 1N34 or similar), or perhaps LEDs.
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http://www.thescipub.com/pdf/10.3844/ajeassp.2008.12.15
DISCUSSION Receiver development: The development of the receiver starts with the use of Germanium Diode ( 1N34 ), 100nF and 1 µF capacitors.
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http://dspace.mit.edu/bitstream/handle/1721.1/44467/30567475-MIT.pdf?sequence=2
F-11 12-Mcps Pulse Phase Detector of Phase Mieasuringp Unit The phase detector of the 12-mcps phase measuring unit was built around a 604 triode phase splitter and a pair of 1N34 germanium diodes .
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Take-home laboratory for a course in radiometry
1N34 Germanium diode (wide black cathode stripe) (RS 276-1123) 1 .
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A zero-power radio receiver.
The 1N34 germanium diode is a demodulating detector that removes the amplitude modulation from the radio carrier frequency.
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Efficient wireless power delivery for biomedical implants
Using 1N34 germanium diodes as a bridge rectifier resulted in minimum voltage drop.
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Hardware-fitted modeling and simulation of VoIP over a wireless LAN
First, two wireless laptops are configured with the RF sniffer devices (a scope probe across a loop of wire in series with a 1N34 germanium diode ) and each connected to a separate channel on the oscilloscope.
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Electronics from the Ground Up: Learn by Hacking, Designing, and Inventing > Components and Schematics
Common part numbers for germanium diodes are 1N34 , 1N60, and 1N270.
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Abstracts and References
The meter makes use of the 1N34 germanium crystal diode , thus avoiding the necessity of power sup- plies and eliminating the triode amplifier stage.