GUNN Diode

Description: Microsemi’s GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at MSC by the Vapor Phase Epitaxy technique. The layers are processed using proprietary techniques resulting in ultra- low phase and 1/f noise. The diodes are available in a variety

• Operating Frequency: 9,500 to 35,500 MHz
• Diode Type: Gunn Diodes
• Features: Other, RF Diodes

Description: QuinStar Technology’s series QTV varactor-tunable Gunn oscillators cover the frequency range of 18 to 110 GHz in seven waveguide bands. These oscillators combine proprietary cavity design, abrupt or hyper-abrupt tuning varactor diodes and high performance Gunn diodes to

• Oscillation Frequency: 18,000 to 110,000 MHz
• Output Power: 10 to 24 dBm
• Operating Temperature: 0 to 50 C
• Package / Form Factor: Waveguide Assembly

Description: QuinStar Technology’s QTM series of mechanically-tunable Gunn oscillators cover the frequency range of 18 to 150 GHz in nine waveguide bands. They combine a high-Q resonant circuit with either a GaAs or InP Gunn diode. Typically, InP diodes are used for high-power

• Oscillation Frequency: 18,000 to 150,000 MHz
• Output Power: 0 to 25 dBm
• Operating Temperature: 0 to 50 C
• Package / Form Factor: Waveguide Assembly

Description: MACOM's MACS-007800-0M1R00 is a RoHS Compliant K-Band Local Oscillator consisting of a Gunn Diode oscillator assembled into a die cast waveguide package. These Local Oscillators are well suited for high volume applications where small size and reliability are required. This local

• Oscillation Frequency: 24,125 MHz
• Output Power: 7 dBm
• Features: Other
• Features / Standards: RoHS Compliant

Description: GAAS GUNN EPI UP HERMETIC PILL

• Features: Other, RF Diodes

Description: Mechanically Tuned Gunn Diode Os

Description: Gives standards for the following categories of discrete devices: variable capacitance diodes and snap-off diodes, mixer diodes and detector diodes, avalanche diodes, gunn diodes, bipolar transistor and field-effet transistors.

Description: Ka band. Characteristics such as high reliability, low leakage and close capacitance tracking between diodes are typical of these devices. Standard capacitance matching is ±10%, but closer matching is available upon request. All diode types are available in a wide selection of ceramic

• C_Dmin/C_Dmax: 2.8
• Features: Other, RF Diodes
• Configuration: Single
• Diode Type: Varactor Diodes

Description: Provides requirements for the following categories of discrete devices: variable capacitance diodes and snap-off diodes, mixer diodes and detector diodes, avalanche diodes, gunn diodes,bipolar transistors and field-effect transistors. This second

Description: The MACS-007801-0M1 is a RoHS Compliant K-Band Mono Doppler transceiver consisting of a Gunn Diode oscillator and Schottky Diode mixer assembled into a diecast waveguide package. It is designed for commercial applications, for speed measurements or motion sensing.

• Frequency (Fc): 24,125 MHz
• Filter Type: Bandpass
• Features: Other
• Package Type: Waveguide Assembly

Description: Gives standards for the following categories of discrete devices: variable capacitance diodes and snap-off diodes, mixer diodes and detector diodes, avalanche diodes, gunn diodes, bipolar transistor and field-effet transistors. This consolidated