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Supplier: Richardson RFPD
Description: Microsemi’s GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at MSC by the Vapor Phase Epitaxy technique. The layers are processed using proprietary techniques resulting in ultra- low phase and 1/f noise. The diodes are available in a variety
- Diode Type: Gunn Diodes
- Operating Frequency: 9500 to 35500 MHz
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Diode Type: Gunn Diodes
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Supplier: QuinStar Technology, Inc.
Description: QuinStar Technology’s series QTV varactor-tunable Gunn oscillators cover the frequency range of 18 to 110 GHz in seven waveguide bands. These oscillators combine proprietary cavity design, abrupt or hyper-abrupt tuning varactor diodes and high performance Gunn diodes to
- Operating Temperature: 0.0 to 50 C
- Oscillation Frequency: 18000 to 110000 MHz
- Output Power: 10 to 24 dBm
- Package / Form Factor: Waveguide Assembly
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Supplier: QuinStar Technology, Inc.
Description: QuinStar Technology’s QTM series of mechanically-tunable Gunn oscillators cover the frequency range of 18 to 150 GHz in nine waveguide bands. They combine a high-Q resonant circuit with either a GaAs or InP Gunn diode. Typically, InP diodes are used for high-power
- Operating Temperature: 0.0 to 50 C
- Oscillation Frequency: 18000 to 150000 MHz
- Output Power: 0.0 to 25 dBm
- Package / Form Factor: Waveguide Assembly
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Supplier: Richardson RFPD
Description: MACOM's MACS-007800-0M1R00 is a RoHS Compliant K-Band Local Oscillator consisting of a Gunn Diode oscillator assembled into a die cast waveguide package. These Local Oscillators are well suited for high volume applications where small size and reliability are required. This local
- Features / Standards: RoHS Compliant
- Oscillation Frequency: 24125 MHz
- Oscillator Type: Other
- Output Power: 7 dBm
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Supplier: Acme Chip Technology Co., Limited
Description: GAAS GUNN EPI UP HERMETIC PILL
- Diode Type: RF Diodes
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Supplier: Acme Chip Technology Co., Limited
Description: GAAS GUNN EPI DOWN HERMETIC PILL
- Diode Type: RF Diodes
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Supplier: Acme Chip Technology Co., Limited
Description: GAAS GUNN EPI UP HERMETIC STUD
- Diode Type: RF Diodes
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Supplier: Acme Chip Technology Co., Limited
Description: GAAS GUNN EPI DOWN HERMETIC STUD
- Diode Type: RF Diodes
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Supplier: DigiKey
Description: Mechanically Tuned Gunn Diode Os
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Supplier: DigiKey
Description: Mechanically Tuned Gunn Diode Os
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Supplier: DigiKey
Description: Mechanically Tuned Gunn Diode Os
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Supplier: DigiKey
Description: Mechanically Tuned Gunn Diode Os
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Supplier: Richardson RFPD
Description: Single Diode Configuration: The MA46600 series of microwave tuning varactors is a family of abrupt junction gallium arsenide devices featuring Q factors in excess of 8000. This series is specifically designed for broadband high Q tuning performance (up to 8000 at -4 volts and 50 MHz) from L
- Diode Type: Varactor Diodes, RF Diodes
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Description: Gives standards for the following categories of discrete devices: variable capacitance diodes and snap-off diodes, mixer diodes and detector diodes, avalanche diodes, gunn diodes, bipolar transistor and field-effet transistors.
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Description: Provides requirements for the following categories of discrete devices: variable capacitance diodes and snap-off diodes, mixer diodes and detector diodes, avalanche diodes, gunn diodes,bipolar transistors and field-effect transistors. This second
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Supplier: CSA Group
Description: Provides requirements for the following categories of discrete devices: variable capacitance diodes and snap-off diodes, mixer diodes and detector diodes, avalanche diodes, gunn diodes,bipolar transistors and field-effect transistors. This second
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Description: IEC 60747-4:2007+A1:2017 Provides requirements for the following categories of discrete devices: variable capacitance diodes and snap-off diodes, mixer diodes and detector diodes, avalanche diodes, gunn diodes,bipolar transistors and field-effect
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Supplier: CSA Group
Description: IEC 60747-4:2007+A1:2017 Provides requirements for the following categories of discrete devices: variable capacitance diodes and snap-off diodes, mixer diodes and detector diodes, avalanche diodes, gunn diodes,bipolar transistors and field-effect
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Description: Gives standards for the following categories of discrete devices: variable capacitance diodes and snap-off diodes, mixer diodes and detector diodes, avalanche diodes, gunn diodes, bipolar transistor and field-effet transistors. This consolidated
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GaN based transfer electron and avalanche transit time devices
Abstract: A new model is developed to study the microwave/mm wave characteristics of two-terminal GaN- based transfer electron devices (TEDs), namely a Gunn diode and an impact avalanche transit time (IMPATT) device.
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Advanced Semiconducting Materials and Devices
Chapter 8 provides information on construction, characteristics, performance and application of microwave diodes, varacter diode, photodiodes; IMPATT, TRAPATT, BARITT and Gunn diodes , etc.
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Transient analysis of microwave Gunn oscillator using extended spectral element time domain method
The Gunn diode within the oscillator is treated as a lumped element, while the passive distributed part of the oscillator is modeled using the SETD method.
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Microwave Devices Circuits and Subsystems for Communications Engineering
… Equivalent Circuit 2.5.5 Manufacturing 2.5.6 Applications 2.5.6.1 Switching 2.5.6.2 Phase shifting 2.5.6.3 Variable attenuation 2.5.6.4 Power limiting Step-Recovery Diodes Gunn Diodes 2.7.1 Self …