HEMT

Products & Services

See also: Categories | Featured Products | Technical Articles | More Information

Find Suppliers by Category Top


Conduct Research Top

  • Wolfspeed Addresses Growing Ultra-High Frequency Radar Market With New GaN HEMT
    The device was engineered for the growing ultra-high frequency (UHF) radar market, in which defense, public safety and land mobile radio applications seek to upgrade performance and component life cycle availability by implementing GaN RF power devices. The new UHF GaN RF device delivers greater
  • Thermal Considerations for High-Power GaN RF Amplifiers
    The reliability of high-power GaN HEMTs, employed in high power amplifiers, is driven by peak temperatures within the base semiconductor technology. As such, the design engineer must carefully consider the thermal environment presented to a high-power amplifier. This paper will examine how peak
  • Perspective of Loss Mechanisms for Silicon and Wide Band-Gap Power Devices
    Semiconductor losses and their potential for further improvement: This paper compares latest generation Superjunction power transistors versus e-mode GaN HEMTs and SiC MOSFETs
  • Understanding the Phenomenon of High-Power Pulse Recovery in GaN LNAs
    The Gallium Nitride (GaN) high electron mobility. transistor (HEMT) is well known for its use in microwave and millimeter wave power amplifiers due to its high breakdown voltage and ability to handle high RF power. Recently, GaN technology has also been used to create low noise amplifiers (LNAs
  • GaN FETs: Why Cascode?
    GaN technology and specifically GaN-on-Silicon HEMT technology has become a key focus for power engineers over the last few years. Its promise to provide the high-power performance and high-frequency switching many applications are demanding is clear. However as commercial GaN FETs become more
  • Microwave Journal: Modelithics Releases the Modelithics Qorvo GaN Library v21.4.5
    Version 21.4.5 of the Modelithics Qorvo GaN Library includes a total of 82 models containing 59 packaged power models, 17 GaN die power transistor products and six small-signal models. This release offers a non-linear model for the Qorvo QPD1028L, a 750 W (P3dB) discrete GaN on SiC HEMT using

More Information Top

Lock Indicates content that may require registration and/or purchase. Powered by IHS Goldfire