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Supplier: Wolfspeed
Description: Wolfspeed’s CGH35060F2/P2 is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH35060F2/P2 ideal for 3.1 – 3.5-GHz, S-band, pulsed-amplifier applications. The
- Transistor Type: HEMT
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Supplier: Wolfspeed
Description: Wolfspeed CGHV59350 is a GaN HEMT designed with high-efficiency, high-gain, and wide-bandwidth. It's ideal for 5.2-5.9 GHz c-band radar-amplifier applications.
- Transistor Type: HEMT
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Supplier: Wolfspeed
Description: Wolfspeed’s CGH55030F2/CGH55030P 2 is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH55030F2/ CGH55030P2 ideal for C-band pulsed or CW
- Transistor Type: HEMT
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Supplier: Wolfspeed
Description: Wolfspeed’s CGHV31500F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGHV31500F ideal for 2.7 – 3.1-GHz s-band radar-amplifier applications. The
- Transistor Type: HEMT
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Supplier: Qorvo
Description: Qorvo's QPD2060D is a discrete 600-micron pHEMT which operates from DC to 20 GHz. The QPD2060D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias
- Package Type: Other
- Transistor Grade / Operating Range: Military
- Transistor Type: HEMT, PHEMT
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Supplier: Richardson RFPD
Description: 0.45-6.0 GHz Low Noise Transistor
- Package Type: Other
- Transistor Type: PHEMT
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Supplier: RS Components, Ltd.
Description: A High-electron-mobili ty transistor (HEMT, also known as a hetero-structure or hetero-junction FET) is a junction FET utilising two materials with different band gaps (i.e. a hetero-junction) as the channel instead of the doped region used in a MOSFET. HEMT transistors
- Package Type: Other
- Transistor Type: HEMT
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Supplier: Utmel Electronic Limited
Description: RF FET HEMT 150V 14DB SOT1228B
- Polarity: N-Channel, Other
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Supplier: Qorvo
Description: Qorvo's QPD2120D is a discrete 1200-micron pHEMT which operates from DC to 20 GHz. The QPD2120D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias
- Operating Frequency: 0.0 to 20000 MHz
- Package Type: Other
- Power Gain: 11 dB
- Transistor Grade / Operating Range: Military
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Supplier: Broadcom Inc.
Description: Single-voltage high linearity, low noise E-pHEMT housed in an 8-lead LPCC (JEDEC DFP-N) package. The device exhibits exceptional RF performance, power efficiency and product consistency in the 50MHz to 6 GHz frequency range.
- Package Type: Other
- Transistor Grade / Operating Range: Other
- Transistor Type: PHEMT, Other
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Supplier: ROHM Semiconductor GmbH
Description: GNE1007TB is an 8V Gate Source Voltage 150V GaN HEMT. It is a product of the EcoGaN™ series that contributes to power conversion efficiency and reducing size by making the best use of low ON resistance and high-speed switching, and the power supply efficiency is 96.5% or more even in the high
- Package Type: Other
- Transistor Grade / Operating Range: Commercial
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Supplier: Utmel Electronic Limited
Description: Trans JFET 15V GaAs pHEMT 3-Pin PLD-1.5 T/R
- Number of Transistors in the Chip: 1
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
- V(BR)DSS: 15 volts
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Supplier: ODG (Origin Data Global)
Description: CSP-6 GaN Transistors(GaN HEMT) ROHS
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Supplier: Broadcom Inc.
Description: Enhanced-mode PHEMT technology requires only a single positive voltage source. This low noise, high gain, high linearity transistor is optimized for low current receiver designs in cellular/PCS and WCDMA handsets, mobile wireless devices and other low current RF applications in the 450MHz to
- Amplifier Type: Low Noise Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 450 to 6000 MHz
- Maximum Gain: 18.5 dB
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Description: IEC 63373:2022 In general, dynamic ON-resistance testing is a measure of charge trapping phenomena in GaN power transistors. IEC 63373:2022 provides guidelines for testing dynamic ON-resistance of GaN lateral power transistor solutions. The test methods can be applied to the following:
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Description: RF MOSFET HEMT 440199
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: RF JFET Transistors DC-2.0GHz 100W Gain 20dB GaN HEMT
- Transistor Type: JFET
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 500W @ 12us/3%/50V ¦ 2.856GHz Operating Frequency ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required ¦ Specified For
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Acme Chip Technology Co., Limited
Description: RF MOSFET GAN HEMT
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: Wolfspeed, Inc. Category: Discrete Semiconductor Products-- Transistors-- FETs, MOSFETs-- RF FETs, MOSFETs Series: GaN Package: Tray Voltage - Rated: 84 V Technology: HEMT Package / Case: 440166 Supplier Device Package: 440166 Base Product Number: CGH55015 Product Status:
- Package Type: SOT3
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Acme Chip Technology Co., Limited
Description: RF MOSFET GAN HEMT
- Packing Method: Other
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Supplier: ODG (Origin Data Global)
Description: RF MOSFET HEMT 28V
- Operating Frequency: 0.0 to 4000 MHz
- Package Type: Other
- Power Gain: 12 dB
- Transistor Type: MOSFET RF Transistors, Other
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Supplier: DigiKey
Description: GAN FET HEMT
- Package Type: Other
- Polarity: N-Channel
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Supplier: Richardson RFPD
Description: The NPT2022 GaN HEMT is a wideband transistor optimized for DC-2 GHz operation. This device has been designed for saturated and linear operation with output power levels to 100W (50 dBm) in an industry standard plastic package with a bolt down flange.
- Operating Frequency: 0.0 to 2000 MHz
- Output Power: 100 watts
- Package Type: Other
- Power Gain: 19 dB
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Supplier: Richardson RFPD
Description: Test board without GaN HEMT
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Supplier: MACOM
Description: At MACOM we offer a broad range of pulsed and linear RF power transistor products--discrete devices, modules, and pallets designed to operate from DC to 6 GHz. Our high power transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and
- Package Type: Other
- Transistor Grade / Operating Range: Commercial, Industrial
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RF MOSFET Transistors - TRANSISTORS - Transistors - FETs, MOSFETs - RF - SAV-581+ -- 893598-SAV-581+Supplier: Win Source Electronics
Description: Manufacturer: Mini-Circuits Win Source Part Number: 893598-SAV-581+ Features: RF Mosfet E-pHEMT 3 V 30 mA 45MHz ~ 6GHz 22.3dB 20.5dBm SC-70-4 Package: Reel - TR Package: SC-82A, SOT-343 Categories: Discrete Semiconductor Products Case / Package: SC-70-4 ECCN: EAR99
- Package Type: SOT3, Other
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Supplier: Infineon Technologies AG
Description: The GS66516B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66516B-MR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal
- Package Type: Other
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Supplier: Win Source Electronics
Description: Manufacturer: M/A-Com Technology Solutions Win Source Part Number: 790781-NPTB00025B Packaging: Tray Current Rating: 5.4A Frequency: 0Hz ~ 4GHz Current - Test: 225mA Gain: 13.5dB Transistor Type: HEMT Voltage - Test: 28V Family Name: NPTB00025B Categories
- Package Type: SOT3
- Packing Method: Tray, Other
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 50W @ 1ms/15%/50V ¦ 5.2-5.9GHz Instantaneous Operating Frequency Range ¦ 50O Internally Impedance Matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required
- Output Power: 50 watts
- Package Type: Other
- Power Gain: 14 dB
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 800W @ 128us/2%/50V ¦ 1.090GHz Operating Frequency ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required ¦ Specified For Use
- Operating Frequency: 1090 MHz
- Output Power: 800 watts
- Package Type: Other
- Power Gain: 17 dB
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Supplier: Richardson RFPD
Description: The GS61008P-EVBHF evaluation board (EVB) allows the user to evaluate GaN Systems’ GS61008P Enhancement Mode High Electron Mobility Transistors (E-HEMTs) with the Peregrine PE29101 gate driver in a half-bridge configuration. The PE29101 integrated high-speed driver is designed to
- Category: Development Board
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Supplier: Skyworks Solutions, Inc.
Description: The SKY65050-372LF is a high performance, n-channel lownoise transistor. The device is fabricated from Skyworks advanced depletion mode pHEMT process and is provided in a 2.20 x 1.35 x 1.10 mm, 4-pin SC-70 package. The transistor’s low Noise Figure (NF), high gain, and excellent
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 450 to 6000 MHz
- Maximum Gain: 15.5 dB
- Maximum Operating Voltage: 3 volts
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Supplier: Nexperia B.V.
Description: The GAN039-650NBB is a 650 V, 33 mO Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance
- Package Type: Other
- Polarity: N-Channel
- Transistor Grade / Operating Range: Industrial
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The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo -
QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
Browse RF Transistors Datasheets for Qorvo -
High-performance WSF15N10 MOSFET in TO-252 package offers low on-resistance and fast switching, ideal for power management and motor control applications.
(read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
The SMMBT3904LT3G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) tailored for general-purpose amplifier applications. With (read more)
Browse Transistors Datasheets for Win Source Electronics -
The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
Browse Transistors Datasheets for Win Source Electronics -
New Nexperia 600 V IGBTs. Ideally suited for industrial motor drive applications, including industrial motor drives like servo motors, robotics, elevators, operating grippers, in-line manufacturing, power inverters, UPS, photovoltaic strings, EV-charging, and induction heating and welding. The portfolio leads with devices across 30 - 75 A.
(read more)
Browse Transistors Datasheets for Nexperia B.V. -
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
Browse Transistors Datasheets for Win Source Electronics
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Perspective of Loss Mechanisms for Silicon and Wide Band-Gap Power Devices
Semiconductor losses and their potential for further improvement: This paper compares latest generation Superjunction power transistors versus e-mode GaN HEMTs and SiC MOSFETs
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Understanding the Phenomenon of High-Power Pulse Recovery in GaN LNAs
The Gallium Nitride (GaN) high electron mobility. transistor (HEMT) is well known for its use in microwave and millimeter wave power amplifiers due to its high breakdown voltage and ability to handle high RF power. Recently, GaN technology has also been used to create low noise amplifiers (LNAs
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Microwave Journal: Modelithics Releases the Modelithics Qorvo GaN Library v21.4.5
Version 21.4.5 of the Modelithics Qorvo GaN Library includes a total of 82 models containing 59 packaged power models, 17 GaN die power transistor products and six small-signal models. This release offers a non-linear model for the Qorvo QPD1028L, a 750 W (P3dB) discrete GaN on SiC HEMT using
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Physics and Technology of Heterojunction Devices
5.2 Performance of HEMT transistors 150 .
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Heteromagnetic Microelectronics
Fig. 7.7 The equivalent circuit of the base HEMT transistor .
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MMICs time‐domain electrical physical simulator adapted to the parallel computation
As an illustration, some results concerning the simulation of a microwave monolithic integrated circuit (MMIC), especially a 2–40 GHz HEMT transistor cascode stage distributed amplifier, are presented.
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Proton irradiation effects on advanced digital and microwave III-V components
Shorter gate length MESFET transistors and HEMT transistors exhibited less displacement-induced .
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Proton irradiation effects on advanced digital and microwave III-V components
Shorter gate length MESFET transistors and HEMT transistors exhibited less displacement-induced damage.
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Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs het...
In this paper we consider numerical simulation and experimental results on the effect of the gate region parameters on the static characteristics of microwave field effect transistors based on pseudomorphic AlGaAs–InGaAs–GaAs heterostructures (p HEMT transistors ).
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Fundamentals of III-V Semiconductor MOSFETs
Fig. 3.8 a The first subband profile of the HEMT transistor indicates that the potential barrier of the low doping HEMT vanishes at smaller gate bias than the high doping HEMT. b The Id –VDS plot shows low delta-doping HEMT …
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Polarization Effects in Semiconductors
Measurements of unity gain cutoff frequency and saturation velocity of a GaN HEMT transistor .
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2012 IEEE/MTT-S International Microwave Symposium Digest [Front matter]
their paper entitled, “Demonstration of a 0.48 THz Amplifier Module Using InP HEMT Transistors ,”IEEE MWCL, vol.
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SiC & GaN Power Semiconductors Report - 2014
In August 2013, it signed a non-exclusive worldwide license agreement with Cree, Inc., which provided access to Cree’s extensive family of GaN HEMT transistor and GaN Schottky diode device patents.