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Supplier: Wolfspeed
Description: Wolfspeed’s CGH40010 is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40010, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high
- Output Power: 10 watts
- Operating Frequency: 6,000 MHz
- Transistor Type: HEMT
- Features: Other
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Supplier: Richardson RFPD
Description: 0.45-6.0 GHz Low Noise Transistor
- Features: Other
- Transistor Type: PHEMT
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Supplier: Wolfspeed
Description: Wolfspeed’s CGH40025 is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40025, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high
- Output Power: 25 watts
- Operating Frequency: 6,000 MHz
- Transistor Type: HEMT
- Features: Other
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Supplier: Wolfspeed
Description: Wolfspeed’s CGH40035F is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40035F, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high
- Output Power: 35 watts
- Operating Frequency: 6,000 MHz
- Transistor Type: HEMT
- Features: Other
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Supplier: Wolfspeed
Description: Wolfspeed’s CGH40045 is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high
- Output Power: 45 watts
- Operating Frequency: 4,000 MHz
- Transistor Type: HEMT
- Features: Other
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Supplier: Mini-Circuits
Description: SMT MMIC, Low Noise, Medium Power, Linear, pHEMT Transistor, 45 MHz to 6000 MHz, SOT-343 Style Package
- Minimum Gain: 8.3 dB
- Maximum Gain: 22.3 dB
- Noise Figure: 0.4 to 1.5 dB
- Operating Temperature: -40 to 85 C
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Supplier: Mini-Circuits
Description: SMT MMIC, Low Noise, Medium Power, pHEMT Transistor, 45 MHz to 6000 MHz, 3x3 mm QFN Style Package
- Minimum Gain: 8.4 dB
- Maximum Gain: 21.3 dB
- Noise Figure: 0.4 to 1.7 dB
- Operating Temperature: -40 to 85 C
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Supplier: Mini-Circuits
Description: SAV-551+ is an ultra-low noise, high IP3 transistor device, manufactured using E-PHEMT* technology enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly below 2.5 GHz, and when combining this noise figure with high IP3 performance in a single
- Minimum Gain: 7.6 dB
- Maximum Gain: 20.9 dB
- Noise Figure: 0.5 to 1.8 dB
- Operating Temperature: -40 to 85 C
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Supplier: Qorvo
Description: Qorvo's QPD2060D is a discrete 600-micron pHEMT which operates from DC to 20 GHz. The QPD2060D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating
- Power Gain: 12 dB
- Operating Frequency: 0 to 20,000 MHz
- Transistor Type: HEMT, PHEMT
- Features: Other
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Supplier: Qorvo
Description: Qorvo's QPD2018D is a discrete 180-micron pHEMT which operates from DC to 20 GHz. The QPD2018D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating
- Power Gain: 14 dB
- Operating Frequency: 0 to 20,000 MHz
- Transistor Type: HEMT, PHEMT
- Features: Other
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Supplier: Qorvo
Description: Qorvo's QPD2080D is a discrete 800-micron pHEMT which operates from DC to 20 GHz. The QPD2080D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating
- Power Gain: 11.5 dB
- Operating Frequency: 0 to 20,000 MHz
- Transistor Type: HEMT, PHEMT
- Features: Other
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Supplier: Qorvo
Description: Qorvo's QPD2025D is a discrete 250-micron pHEMT which operates from DC to 20 GHz. The QPD2025D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating
- Power Gain: 14 dB
- Operating Frequency: 0 to 20,000 MHz
- Transistor Type: HEMT, PHEMT
- Features: Other
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Supplier: Mini-Circuits
Description: Mini-Circuits’ SAV-331+ is a MMIC D-PHEMT transistor with an operating frequency range from 10 to 4000 MHz. This model combines high gain with extremely low noise figure, resulting in lower overall system noise. Low NF and IP3 performance make it an ideal choice for sensitive receivers in
- Minimum Gain: 11.5 dB
- Maximum Gain: 24.6 dB
- Noise Figure: 0.4 to 0.9 dB
- Operating Temperature: -40 to 85 C
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Supplier: Utmel Electronic Limited
Description: RF FET HEMT 150V 14DB SOT1228B
- Number of Transistors in the Chip: 2
- Power Gain: 14 dB
- Output Power: 100 watts
- Polarity: N-Channel
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Supplier: Broadcom Inc.
Description: ATF-35143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 surface mount plastic package.
- Features: Other
- Transistor Type: PHEMT
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Supplier: Utmel Electronic Limited
Description: RF FET HEMT 150V 11.5DB SOT467C
- Number of Transistors in the Chip: 1
- Power Gain: 11.5 dB
- Output Power: 50 watts
- Polarity: N-Channel
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Supplier: Broadcom Inc.
Description: Single-voltage high linearity, low noise E-pHEMT housed in an 8-lead LPCC (JEDEC DFP-N) package. The device exhibits exceptional RF performance, power efficiency and product consistency in the 50MHz to 6 GHz frequency range.
- Features: Other
- Transistor Type: PHEMT
- Package Type: SOT89
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Supplier: Broadcom Inc.
Description: The ATF-501P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead LPCC (JEDEC DFP-N) package. The device exhibits exceptional RF performance, power efficiency and product consistency in the 50MHz to 3.9 GHz frequency range.
- Features: Other
- Transistor Type: PHEMT
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Supplier: ROHM Semiconductor GmbH
Description: GNE1040TB is an 8V Gate Source Voltage 150V GaN HEMT. It is a product of the EcoGaN™ series that contributes to power conversion efficiency and reducing size by making the best use of low ON resistance and high-speed switching, and the power supply efficiency is 96.5% or more even in the high
- Transistor Grade / Operating Range: Commercial
- Features: Other
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Supplier: Broadcom Inc.
Description: This Single Voltage Enhanced Mode E-pHEMT GaAs FET comes packaged in a 1.4mm x 1.2mm x 0.7mm thin miniature leadless package. Its small size, high linearity and low noise figure is optimized for tower-mounted amplifiers, front-end LNA or hybrid modules for base stations, MMDS and other RF
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Transistor Type: PHEMT
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Supplier: ROHM Semiconductor GmbH
Description: GNE1015TB is an 8V Gate Source Voltage 150V GaN HEMT. It is a product of the EcoGaN™ series that contributes to power conversion efficiency and reducing size by making the best use of low ON resistance and high-speed switching, and the power supply efficiency is 96.5% or more even in the high
- Transistor Grade / Operating Range: Commercial
- Features: Other
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Supplier: ROHM Semiconductor GmbH
Description: GNE1007TB is an 8V Gate Source Voltage 150V GaN HEMT. It is a product of the EcoGaN™ series that contributes to power conversion efficiency and reducing size by making the best use of low ON resistance and high-speed switching, and the power supply efficiency is 96.5% or more even in the high
- Transistor Grade / Operating Range: Commercial
- Features: Other
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Supplier: ODG (Origin Data Global)
Description: CSP-6 GaN Transistors(GaN HEMT) ROHS
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Description: IEC 63373:2022 In general, dynamic ON-resistance testing is a measure of charge trapping phenomena in GaN power transistors. IEC 63373:2022 provides guidelines for testing dynamic ON-resistance of GaN lateral power transistor solutions. The test methods can be applied to the following:
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Supplier: VAST STOCK CO., LIMITED
Description: RF JFET Transistors GaN HEMT DC-6.0GHz, 30 Watt
- Transistor Type: JFET
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Supplier: Win Source Electronics
Description: Manufacturer: Mini-Circuits Win Source Part Number: 893598-SAV-581+ Features: RF Mosfet E-pHEMT 3 V 30 mA 45MHz ~ 6GHz 22.3dB 20.5dBm SC-70-4 Package: Reel - TR Package: SC-82A, SOT-343 Categories: Discrete Semiconductor Products Case / Package: SC-70-4 ECCN: EAR99 Popularity: High Fake Threat In
- Transistor Type: MOSFET, MOSFET RF Transistors, PHEMT
- Features: Other
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Wolfspeed, Inc. Category: Discrete Semiconductor Products-- Transistors-- FETs, MOSFETs-- RF FETs, MOSFETs Series: GaN Package: Tray Voltage - Rated: 84 V Technology: HEMT Package / Case: 440166 Supplier Device Package: 440166 Base Product Number: CGH55015 Product Status:
- Transistor Type: MOSFET, MOSFET RF Transistors
- Package Type: SOT3
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Supplier: Richardson RFPD
Description: CGHV35150P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150P ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is
- Power Gain: 13.3 dB
- Output Power: 150 watts
- Operating Frequency: 2,900 to 3,500 MHz
- Features: Other
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Supplier: Win Source Electronics
Description: Manufacturer: Cree/Wolfspeed Win Source Part Number: 866374-CGH40035F Series: GaN Features: RF Mosfet HEMT 28 V 500 mA 0Hz ~ 4GHz 14dB 45W 440193 Package: Tray Package: 440193 Family Name: CGH40* Categories: Discrete Semiconductor Products Case / Package: 440193 ECCN: EAR99 Popularity: Medium
- Transistor Type: MOSFET, MOSFET RF Transistors
- Features: Other
- Package Type: SOT3
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Supplier: Integra Technologies, Inc.
Description: IGN0110UM100 is a dual gallium nitride (GaN) high electron mobility transistor (HEMT). This device is designed for Broadband applications operating over the 100 – 1GHz instantaneous frequency band. Under CW conditions it supplies a minimum of 100 watts of output power with 12dB gain.
- Power Gain: 12.5 dB
- Output Power: 100 watts
- Operating Frequency: 100 to 1,000 MHz
- Transistor Type: MOSFET RF Transistors, Power BJT Transistors
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Supplier: Integra Technologies, Inc.
Description: ■ GaN on SiC HEMT Technology ■ POUT-PK = 500W @ 12us/3%/50V ■ 2.856GHz Operating Frequency ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package Sealed With
- Power Gain: 11.8 dB
- Operating Frequency: 2,856 MHz
- Output Power: 500 watts
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Broadcom Limited Win Source Part Number: 1020185-ATF-52189-BLK Packaging: Bulk Voltage Rating: 7V Current Rating: 500mA Frequency: 2GHz Current - Test: 200mA Gain: 16dB Transistor Polarity: E-pHEMT Voltage - Test: 4.5V Noise Figure: 1.5dB Power - Output: 27dBm Categories:
- Features: Other
- Package Type: SOT3, SOT89
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Description: RF MOSFET HEMT 48V
- Transistor Type: MOSFET
- Features: Other
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Supplier: Acme Chip Technology Co., Limited
Description: RF MOSFET GAN HEMT 48V DIE
- Transistor Type: MOSFET
- Features: Other
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Supplier: Integra Technologies, Inc.
Description: ■ GaN on SiC HEMT Technology ■ POUT = 300W CW @ 36V ■ 960-1250 Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package Sealed
- Power Gain: 13.5 dB
- Output Power: 300 watts
- Operating Frequency: 960 to 1,215 MHz
- Transistor Type: MOSFET RF Transistors, Power BJT Transistors
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QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1000A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1215 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse Power Amplifiers Datasheets for Qorvo -
and a smaller form factor while maintaining the system's low cost. With several product families, such as the CoolGaN Transistors 650 V G5, CoolGaN Transistors 700 V G5, CoolGaN Transistor Dual 650 V G5, and CoolGaN Drive HB 600 V G5, these power devices deliver the highest efficiency with high (read more)
Browse Transistors Datasheets for DigiKey -
Nexperia has expanded its portfolio of 650 V industrial-grade GaN FETs for power conversion applications. The range includes 35 mΩ, 50 mΩ and 70 mΩ devices in TO-247-3, TO-247-4, TOLL and TOLT packages. The additions give engineers greater flexibility to optimise efficiency, thermal performance and power density across datacenter, telecom, renewable energy, BESS and ind...
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Browse Transistors Datasheets for Nexperia B.V. -
The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
Browse Transistors Datasheets for Win Source Electronics -
New Nexperia 600 V IGBTs. Ideally suited for industrial motor drive applications, including industrial motor drives like servo motors, robotics, elevators, operating grippers, in-line manufacturing, power inverters, UPS, photovoltaic strings, EV-charging, and induction heating and welding. The portfolio leads with devices across 30 - 75 A.
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Browse Transistors Datasheets for Nexperia B.V. -
Discover the BSS138PW,115 N-channel MOSFET by Nexperia USA Inc., featuring a 60V drain-source breakdown voltage and 320mA continuous drain current. Ideal for various electronic applications.
(read more)
Browse Transistors Datasheets for Win Source Electronics
Conduct Research Top
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Perspective of Loss Mechanisms for Silicon and Wide Band-Gap Power Devices
Semiconductor losses and their potential for further improvement: This paper compares latest generation Superjunction power transistors versus e-mode GaN HEMTs and SiC MOSFETs
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Understanding the Phenomenon of High-Power Pulse Recovery in GaN LNAs
The Gallium Nitride (GaN) high electron mobility. transistor (HEMT) is well known for its use in microwave and millimeter wave power amplifiers due to its high breakdown voltage and ability to handle high RF power. Recently, GaN technology has also been used to create low noise amplifiers (LNAs
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Microwave Journal: Modelithics Releases the Modelithics Qorvo GaN Library v21.4.5
Version 21.4.5 of the Modelithics Qorvo GaN Library includes a total of 82 models containing 59 packaged power models, 17 GaN die power transistor products and six small-signal models. This release offers a non-linear model for the Qorvo QPD1028L, a 750 W (P3dB) discrete GaN on SiC HEMT using
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Physics and Technology of Heterojunction Devices
5.2 Performance of HEMT transistors 150 .
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Heteromagnetic Microelectronics
Fig. 7.7 The equivalent circuit of the base HEMT transistor .
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MMICs time‐domain electrical physical simulator adapted to the parallel computation
As an illustration, some results concerning the simulation of a microwave monolithic integrated circuit (MMIC), especially a 2–40 GHz HEMT transistor cascode stage distributed amplifier, are presented.
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Proton irradiation effects on advanced digital and microwave III-V components
Shorter gate length MESFET transistors and HEMT transistors exhibited less displacement-induced .
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Proton irradiation effects on advanced digital and microwave III-V components
Shorter gate length MESFET transistors and HEMT transistors exhibited less displacement-induced damage.
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Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs het...
In this paper we consider numerical simulation and experimental results on the effect of the gate region parameters on the static characteristics of microwave field effect transistors based on pseudomorphic AlGaAs–InGaAs–GaAs heterostructures (p HEMT transistors ).
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Fundamentals of III-V Semiconductor MOSFETs
Fig. 3.8 a The first subband profile of the HEMT transistor indicates that the potential barrier of the low doping HEMT vanishes at smaller gate bias than the high doping HEMT. b The Id –VDS plot shows low delta-doping HEMT …
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Polarization Effects in Semiconductors
Measurements of unity gain cutoff frequency and saturation velocity of a GaN HEMT transistor .
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2012 IEEE/MTT-S International Microwave Symposium Digest [Front matter]
their paper entitled, “Demonstration of a 0.48 THz Amplifier Module Using InP HEMT Transistors ,”IEEE MWCL, vol.
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SiC & GaN Power Semiconductors Report - 2014
In August 2013, it signed a non-exclusive worldwide license agreement with Cree, Inc., which provided access to Cree’s extensive family of GaN HEMT transistor and GaN Schottky diode device patents.