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Supplier: Infineon Technologies AG
Description: The BTS5215L is a high side power switch with integrated vertical power FET, providing embedded protection and diagnostic functions. Summary of Features Very low standby current CMOS Compatible input Improved electromagnetic compatibility (EMC) Fast demagnetization of
- tON: 250,000 ns
- tOFF: 270,000 ns
- Operating Ambient Temperature: -40 to 150 C
- Features: Other
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Supplier: Infineon Technologies AG
Description: 0.1 to 6 GHz coverage High ESD robustness On-chip control logic Very small leadless and halogen free package TSNP-6-2 (0.7x1.1mm 2) with super low height of 0.375 mm No decoupling capacitors required if no DC applied on RF lines RoHS compliant package 2 high-linearity TRx paths
- Frequency Range: 100 to 6,000 MHz
- Insertion Loss: 0.25 dB
- Isolation (Port to Port): 40 dB
- Actuator Voltage: 1.8 to 3.3 volts
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Supplier: Skyworks Solutions, Inc.
Description: output and the antenna switch provides ultimate flexibility in DECT applications. A Normal Transmit Power (NTP) input is used to control power between –10 dBm and +25 dBm. NTP is a voltage-operated control with a very high input impedance (>100 kΩ) and a range of 0 V to 1.8 V.
- Output Power( P1dB): 25 dBm
- Minimum Operating Voltage: 3 volts
- Maximum Operating Voltage: 4.5 volts
- Features: Other
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Supplier: Skyworks Solutions, Inc.
Description: The SKY5A5110 is a single-pole, four-throw (SP4T) switch. No external DC blocking capacitors are required on the RF paths as long as there is no DC voltage on the RF line. The switch can operate over the temperature range of –40 °C to +105 °C. Switching is controlled by two
- Frequency Range: 400 to 3,800 MHz
- Isolation (Port to Port): 43 dB
- Features: Other
- Type: SP4T
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Supplier: Skyworks Solutions, Inc.
Description: The SKY13597-684LF is a single-pole, four-throw (SP4T) switch. No external DC blocking capacitors are required on the RF paths as long as there is no DC voltage on the RF line. The switch can operate over the temperature range of −40 °C to +90 °C . Switching is controlled by two
- Frequency Range: 700 to 3,800 MHz
- Features: Other
- Type: SP4T
- Package Type: Surface Mount
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Supplier: Skyworks Solutions, Inc.
Description: series or shunt tuning applications. No external DC blocking capacitors are required on the RF paths as long as there is no DC voltage on the RF line. The switch can operate over the temperature range of -40 °C to +90 °C. Switching is controlled by two CMOS/TTL compatible
- Frequency Range: 100 to 3,800 MHz
- Features: Other
- Type: SP4T
- Package Type: Surface Mount
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Supplier: Richardson RFPD
Description: the control pins, the ANT pin is connected to one of four switched RF outputs (RF1 to RF4) using a low insertion loss path, while the paths between the ANT pin and the other RF pins are in a high isolation state. The antenna path can also be closed on a 50 Ω load when it needs
- Frequency Range: 100 to 3,800 MHz
- Insertion Loss: 0.45 dB
- Isolation (Port to Port): 35 dB
- Switching Speed: 0.00175 ms
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Supplier: Infineon Technologies AG
Description: for power level routing Designers who used this product also designed with BGA5H1BN6 | Multi-purpose LNAs BGS16MA12 | RF Switches BGA729N6 | Multi-purpose LNAs BGS14WMA9 | RF Switches BGA824N6 | GNSS LNAs BGS12P2L6 | RF Switches BGS12WN6 | RF
- Frequency Range: 100 to 5,000 MHz
- Features: Other
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Supplier: Infineon Technologies AG
Description: applications Designers who used this product also designed with BGA824N6 | GNSS LNAs BGA855N6 | GNSS LNAs BGS14M8U9 | RF Switches BGA824N6 | GNSS LNAs BGA855N6 | GNSS LNAs BGS14M8U9 | RF Switches BGA824N6 | GNSS LNAs BGA855N6 | GNSS LNAs BGS14M8U9 | RF
- Frequency Range: 400 to 7,125 MHz
- Features: Other
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Supplier: Mini-Circuits
Description: The JSW2-33DR-75+ is a high-power reflective SPDT RF switch, with reflective short on output ports in the OFF state. Made using a Silicon-on-Insulator process, it provides very high IP3 (+55 dBm typ.). This switch also has a built-in CMOS driver and negative
- Frequency Range: 5 to 3,000 MHz
- Insertion Loss: 0.38 to 0.64 dB
- Isolation (Port to Port): 45 dB
- Operating Temperature: -40 to 85 C
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Supplier: Mini-Circuits
Description: The JSW2-63DR+ is a high-power reflective SPDT RF switch, with reflective short on output ports in the OFF state. Made using a Silicon-on-Insulator process, it provides very high IP3 (+55 dBm typ.). This switch also has a built-in CMOS driver and negative voltage
- Frequency Range: 5 to 6,000 MHz
- Insertion Loss: 0.33 to 0.8 dB
- Isolation (Port to Port): 46 dB
- Operating Temperature: -40 to 85 C
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Supplier: Mini-Circuits
Description: JSW6-33DR+ is a high power reflective SP6T RF switch, with reflective short on output ports in the off con- dition. Made using Silicon-on-Insulator process, it has very high IP3, a built-in CMOS driver and negative voltage generator. Its tiny 2x2mm, 14-lead case
- Frequency Range: 5 to 2,700 MHz
- Insertion Loss: 0.6 to 0.8 dB
- Isolation (Port to Port): 37 dB
- Operating Temperature: -40 to 85 C
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Supplier: Mini-Circuits
Description: JSW5-23DR-75+ is a high power reflective SP5T RF switch, with reflective short on output ports in the off condition. Made using Silicon-on-Insulator process, it has very high IP3, a built-in CMOS driver and nega- tive voltage generator. Its tiny 2x2mm, 14-lead case
- Frequency Range: 5 to 2,000 MHz
- Insertion Loss: 0.7 to 1.3 dB
- Isolation (Port to Port): 38 dB
- Operating Temperature: -40 to 85 C
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Supplier: Microchip Technology, Inc.
Description: designed to drive two very low-threshold, high-voltage depletion N-MOSFETs, such as DN2625s, as source drivers. The two DN2625 drains are connected to a center-tap RF pulse transformer. The transformer’s secondary output connects to a cable and piezoelectric or capacitive transducer as
- Device Type: Beamformers
- Features: Other
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Supplier: Richardson RFPD
Description: The PE42850 is a HaRP™ technology-enhanced SP5T high power RF switch for use in cellular and other wireless applications. It has both a standard and attenuated RX mode. It also delivers high linearity and excellent harmonics performance. No blocking capacitors are
- Category: Development Board
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Supplier: Microchip Technology, Inc.
Description: account. Additional Features High Performance RF-CMOS 2.4 GHz Radio Transceiver Targeted for IEEE 802.15.4™, ZigBee®, 6LoWPAN, RF4CE, SP100, WirelessHART™ and ISM Applications Industry Leading Link Budget (104 dB) Receiver Sensitivity -101 dBm Programmable Output Power
- Operating Temperature: -40 to 125 C
- Features: Other
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Supplier: Richardson RFPD
Description: Typical high power applications include home and industrial automation, smart power, and RF4CE among others. Combining superior performance, high sensitivity and efficiency, low noise, small form factor, and low cost, RFX2411 is the perfect solution for applications
- Supply Voltage: 3.3 V
- Device Type: Front End
- Features: Other
- Package Type: QFN
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Supplier: Microchip Technology, Inc.
Description: requires a myMicrochip account. Additional Features High Performance RF-CMOS 2.4GHz radio transceiver targeted for IEEE® 802.15.4, zigbee®, RF4CE, 6LoWPAN, and ISM applications Industry leading link budget: Receiver sensitivity -101dBm Programmable TX output power from
- Operating Frequency: 2,400 MHz
- Supply Voltage: 1.8 to 3.6 volts
- Features: Other
- Package Type: Surface Mount Technology (SMT)
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Supplier: Renesas Electronics Corporation
Description: The KGF20N05D offers unprecedented low ON-resistance and total gate charge, outperforming conventional trench MOSFETs and enabling high frequency, low voltage switching. The device offers extremely high power density, reducing the board size of DC/DC converters and other
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Supplier: Richardson RFPD
Description: The PE43620 is a 50 Ohm, high linearity, 2-bit RF digital step attenuator (DSA) covering an 18dB attenuation range in 6 dB steps. With a parallel control interface, it maintains high attenuation accuracy, fast switching speed, low insertion loss and low power consumption.
- Frequency Range: 0.05 to 3 GHz
- Number of Bits (for Digital Attenuators): 2
- Insertion Loss: 0.6 dB
- Features: Other
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Supplier: Nexperia B.V.
Description: Very fast switching No secondary breakdown Applications Relay driver High-speed line driver High-side loadswitch Switching circuits
- Features: Other
- Package Type: SOT89
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Supplier: Nexperia B.V.
Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very low threshold High-speed switching No secondary breakdown Direct interface to C-MOS, TTL etc.
- MOSFET Operating Mode: Enhancement
- Features: MOSFET, Other
- Package Type: SOT23
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Supplier: Nexperia B.V.
Description: and 2DIR) inputs for direction control. A HIGH on nOE causes the outputs to assume a high-impedance OFF-state. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow
- Operating Frequency: 100 MHz
- Operating Temperature: -40 to 85 C
- Features: Other
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Supplier: ValueTronics International, Inc.
Description: installers, and service personnel in telecom, data comm, computer, and semiconductor power electronics environments for: Power supplies (switching and linear) Semiconductor devices (SCRs, IGBTs, MOSFETs, CMOS, BJTs) Power inverters/converters Electronic ballasts
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Supplier: Microchip Technology, Inc.
Description: TX/RX RF terminal simplifies external matching and reduces external antenna switches Max. +4dBm output power Built-in T/R switch for Class 2/3 application To avoid temperature variation, temperature sensor with temperature calibration is utilized into bias current and gain
- Pin Count: 48 #
- Supply Voltage: 3 V, 3.3 V, 3.6V
- Technology: Bluetooth
- Interface: I2C
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A High Power CMOS Switch Using Substrate Body Switching in Multistack Structure
Abstract—A novel high power CMOS RF switch using the substrate body switching technique in a multistack structure is designed, implemented, and characterized in a standard 0.18- m triple-well CMOS process.
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CMOS High Power SPDT Switch using Multigate Structure
Abstract— A novel CMOS high power RF switch using the multi-gate structure in a 0.18-um triple-well CMOS process is designed, implemented, and characterized.
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First Silicon Switches For 3G Smartphones
RF Micro Devices, a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced recently that the Company has successfully qualified and released its first high power RF CMOS switch using high-resistivity silicon …
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First Silicon Switches For 3G Smartphones
RF Micro Devices, a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced recently that the Company has successfully qualified and released its first high power RF CMOS switch using high-resistivity silicon …
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A high-linearity inverse-mode SiGe BiCMOS RF switch
Compared to CMOS RF switches , higher dc power is dissipated in SiGe HBT switches due to the bias current flowing through the bipolar transistor in the ON state.
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CMOS large-signal substrate modeling for high-power RF switch design
An improved CMOS large-signal model including the substrate/triple-well characteristics has been proposed for the application in high power -handling of CMOS RF switch circuit.
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Mixed-signal 0.18&mgr;m CMOS and SiGe BiCMOS foundry technologies for ROIC applications
For cellular PA applications, a thick film SOI CMOS process has been used to integrate RF power amplifier (PA) controllers, high voltage CMOS for power management and RF high power switches for a cost effective die in the 0.5μm process node …
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http://www.scirp.org/journal/PaperDownload.aspx?DOI=10.4236/wet.2011.21003
In this paper, we present a comprehensive study S-parameter for the low- power , high speed DP4T DG RF CMOS switch .
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Author index
A High Dynamic Range CMOS RF Power Amplifier with a Switchable Transformer for Polar Transmitters (RTUP-21) 741 .
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A Review of Watt-Level CMOS RF Power Amplifiers
[145] Y. Kim, B. H. Ku, C. Park, D. H. Lee, and S. Hong, “A high dynamic range CMOS RF power amplifier with a switchable transformer for polar transmitters,” in RF Integr.