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Supplier: Skyworks Solutions, Inc.
Description: two CMOS/TTL compatible control voltage inputs (VC1 and VC2). Depending on the logic voltage level applied to the control pin, the RFC pin is connected to one of four switched RF outputs (RF1, RF2, RF3, or RF4) by using a low insertion loss path,
- Actuator Type: SP4T, Other
- Frequency Range: 700 to 3800 MHz
- Package Type: Surface Mount, Other
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Supplier: Skyworks Solutions, Inc.
Description: CMOS/TTL compatible control voltage inputs (VC1 and VC2). Depending on the logic voltage level applied to the control pin, the RFC pin is connected to one of four switched RF outputs (RF1, RF2, RF3, or RF4) by using a low insertion loss path, while
- Actuator Type: SP4T, Other
- Frequency Range: 400 to 3800 MHz
- Isolation (Port to Port): 43 dB
- Package Type: Surface Mount, Other
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Supplier: Richardson RFPD
Description: UltraCMOS® SP4T RF Switch 30 MHz–6 GHz. The PE42442 is a HaRP™ technology-enhanced absorptive SP4T RF switch designed for use in 3G/4G wireless infrastructure and other high performance RF applications. This switch is a pin-compatible four
- Actuator Type: SP4T, Other
- Frequency Range: 30 to 6000 MHz
- Insertion Loss: 1.15 dB
- Isolation (Port to Port): 52 dB
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Supplier: Richardson RFPD
Description: UltraCMOS® SPDT RF Switch 100 - 2700 MHz. The PE42821 is a HaRP™ technology-enhanced high power reflective SPDT RF switch designed for use in mobile radio, relay replacement and other high performance wireless applications. This switch
- Actuator Type: SPDT, Other
- Frequency Range: 100 to 2700 MHz
- Insertion Loss: 0.6000 dB
- Isolation (Port to Port): 28 dB
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Supplier: Skyworks Solutions, Inc.
Description: ) between the PA output and the antenna switch provides ultimate flexibility in DECT applications. A Normal Transmit Power (NTP) input is used to control power between –10 dBm and +25 dBm. NTP is a voltage-operated control with a very high input impedance (>100 kO) and a
- Amplifier Type: Power Amplifier
- Maximum Operating Voltage: 4.5 volts
- Minimum Operating Voltage: 3 volts
- Output Power( P1dB): 25 dBm
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Supplier: Richardson RFPD
Description: The PE42423 is a HaRP™ technology-enhanced absorptive 50 Ohm SPDT RF switch designed for use in high power and high performance WLAN 802.11 a/b/g/n/ac applications such as carrier and enterprise Wi-Fi Products, supporting bandwidths up to 6 GHz. This switch
- Actuator Type: SPDT, Other
- Frequency Range: 100 to 6000 MHz
- Insertion Loss: 0.9500 dB
- Isolation (Port to Port): 41 dB
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Supplier: Richardson RFPD
Description: complementary control inputs. Using a nominal +3-volt power supply voltage, a typical input 1 dB compression point of +33.5 dBm can be achieved. The PE4259 SPDT High Power RF Switch is manufactured on Peregrine’s UltraCMOS™ process, a patented variation of
- Actuator Type: SPDT, Other
- Frequency Range: 0.0 to 3000 MHz
- Insertion Loss: 0.3500 dB
- Isolation (Port to Port): 30 dB
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Supplier: Infineon Technologies AG
Description: The BTS5215L is a high side power switch with integrated vertical power FET, providing embedded protection and diagnostic functions. Summary of Features Very low standby current CMOS Compatible input Improved electromagnetic compatibility (EMC) Fast
- Operating Ambient Temperature: -40 to 150 C
- Package Type: Other
- RoHS Compliant: Yes
- tOFF: 270000 ns
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Supplier: Skyworks Solutions, Inc.
Description: series or shunt tuning applications. No external DC blocking capacitors are required on the RF paths as long as there is no DC voltage on the RF line. The switch can operate over the temperature range of -40 °C to +90 °C. Switching is controlled by two CMOS/TTL
- Actuator Type: SP4T, Other
- Frequency Range: 100 to 3800 MHz
- Package Type: Surface Mount, Other
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Supplier: Infineon Technologies AG
Description: The BGS12SN6 RF MOS switch is specifically designed for WLAN and Bluetooth applications. Any of the 2 ports can be used as termination of the diversity antenna handling up to 30 dBm. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS
- Actuator Type: SPDT, Other
- Actuator Voltage: 1.8 to 3.3 volts
- Control Interface: Other
- Frequency Range: 100 to 6000 MHz
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Supplier: Infineon Technologies AG
Description: The BGSX44MA12 RF CMOS switch is specifically designed for LTE and WCDMA Receive path applications. This 4P4T offers low insertion loss and low harmonic generation. The switch is controlled via a MIPI RFFE controller. The on-chip controller allows power-supply
- Actuator Type: Other
- Actuator Voltage: 1.65 to 1.95 volts
- Control Interface: Other
- Frequency Range: 100 to 3800 MHz
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Supplier: Infineon Technologies AG
Description: miniature ATSLP package and comprises of a high power CMOS SP8T switch with integrated GPIO interface. This RF switch is a perfect solution for multimode handsets based on LTE and WCDMA. The switch is controlled via a GPIO interface. It features
- Actuator Type: Other
- Actuator Voltage: 2.4 to 3.4 volts
- Control Interface: Other
- Frequency Range: 100 to 3800 MHz
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Supplier: Microchip Technology, Inc.
Description: requires a myMicrochip account. Additional Features High Performance RF-CMOS 2.4GHz radio transceiver targeted for IEEE® 802.15.4, zigbee®, RF4CE, 6LoWPAN, and ISM applications Industry leading link budget: Receiver sensitivity
- Form Factor / Package: Surface Mount Technology (SMT), Other
- Operating Frequency: 2400 MHz
- Supply Voltage: 1.8 to 3.6 volts
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Supplier: Microchip Technology, Inc.
Description: Feature rich, low-power 2.4GHz transceiver designed for industrial and consumer IEEE 802.15.4, ZigBee, RF4CE, SP100, WirelessHART™, ISM, and high data rate applications. It is a true SPI-to-antenna solution providing a complete radio transceiver interface between the antenna and
- IC Package Type: Other
- Operating Temperature: -40 to 125 C
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Supplier: RS Components, Ltd.
Description: THe CC1190 device contains an RF power amplifier (PA), RF low-noise amplifier (LNA) and switching circuits to provide a high-performance RF front-end to a wireless transceiver. It also acts as a range-extender for Texas Instruments transceiver devices in the
- Actuator Type: SPDT
- Insertion Loss: 0.8000 dB
- Isolation (Port to Port): 15 dB
- Package Type: Surface Mount, Other
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Supplier: Renesas Electronics Corporation
Description: . The KGF16N05D device offers unprecedented low on-resistance and total gate charge, outperforming conventional trench MOSFETs and enabling high frequency, low voltage switching. The device offers extremely high power density, reducing the board size of DC/DC converters
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Supplier: Microchip Technology, Inc.
Description: MD2134 consists of CMOS digital logic input circuits, an eight-bit current DAC for aperture weighting amplitude control, and a programmable 15-level pulse amplitude modulation (PAM) current-source that does not include a zero level. The fast current sources are constructed with
- IC Package Type: Other
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Supplier: RS Components, Ltd.
Description: The ADG904-R is a Wideband 2.5GHz, 37dB Isolation at 1GHz, CMOS 1.65V to 2.75V, 4:1 Multiplexer/SP4T. This evaluation board allows designers to evaluate the high performance, wideband switches with minimum effort. To test these devices using this evaluation board, the user needs
- Category: Development Suite / Kit
- Ports: Wireless
- Supported System: RF
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Supplier: Nexperia B.V.
Description: Integrated 30 O termination resistors Supply voltage range from 4.5 to 5.5 V BiCMOS high speed and output drive Direct interface with TTL levels Power-up 3-state IOFF circuitry provides partial Power-down mode operation Latch
- Form Factor / Package: Other
- Operating Frequency: 100 MHz
- Operating Temperature: -40 to 85 C
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Supplier: ValueTronics International, Inc.
Description: safety certification Applications: Development and analysis solutions for designers, installers, and service personnel in telecom, data comm, computer, and semiconductor power electronics environments for: Power supplies (switching and linear
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Supplier: Microchip Technology, Inc.
Description: . The ATWILC3000 supports single stream 1x1 802.11n mode providing tested throughput of up to 46 Mbps UDP & 28 Mbps TCP/IP. The ATWILC3000 features fully integrated Power Amplifier, LNA, Switch and Power Management. Implemented in low-power CMOS technology, the
- Operating Temperature: -40 to 85 C
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The ALD4213 quad SPST CMOS analog switches from Advanced Linear Devices offer fast switching, low on-resistance, micropower consumption, and excellent precision for low-voltage and high-speed applications. These switches are specifically designed for use in (read more)
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The PE42448 is a high?performance SP4T RF switch from pSemi, built on its patented UltraCMOS+™ silicon?on?insulator (SOI) process and enhanced with HaRP™ technology. It operates across a wide 10 MHz to 6 GHz frequency range and is designed for demanding RF applications. Key (read more)
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XM Series is RF Switch based on SOI "Silicon On Insurator" and GaAs "gallium arsenide" process. It is suitable product for Radio Frequency applications such as Cellular or ISM band widely. Switch control Interface supports GPIO and MIPI with various configurations: High Power, High Isolation, excellent linearity and Insertion Loss. (read more)
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The ISL400DE is a highly integrated CMOS photoelectric sensor IC, widely used in diffuse reflection photoelectric sensors. The chip integrates the following features: PD photodiode receiver LED emitter driver Switched-capacitor signal amplifier Mode switching (read more)
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The ISL500KE is a highly integrated CMOS photo IC, widely used in diffuse reflection, cross beam curtain, through beam curtain, and similar applications The chip integrates the following features: PD photodiode receiver, LED emitter driver, Switched (read more)
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PowerSnap Series RF Connectors Winchester’s PowerSnap is an ideal solution for transferring high power from a printed circuit board to anywhere inside a (read more)
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integrity in demanding RF and Microwave systems. With a wide leveled output power range from -120 dBm to 17 dBm, it provides the critical dynamic headroom needed for testing both high-gain amplifiers and sensitive receivers without external signal conditioning. Key Technical Specifications (read more)
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amplifier characterization, receiver sensitivity testing, applications requiring higher output power Electronic Attenuators: Faster switching speed: Allows for rapid level changes in automated test sequences (read more)
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-on-insulator (SOI) double-pole, double-throw (DPDT) switch with high-linearity performance, low insertion loss, and high isolation. The device enables high speed switching between antennas for high data throughput and minimizes the need for additional filtering. The (read more)
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The ADRV9002 is a highly integrated, RF transceiver that has dual-channel transmitters, dual-channel receivers, integrated synthesizers, and digital signal processing functions. The IC delivers a versatile combination of high performance and low power consumption required by (read more)
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A High Power CMOS Switch Using Substrate Body Switching in Multistack Structure
Abstract—A novel high power CMOS RF switch using the substrate body switching technique in a multistack structure is designed, implemented, and characterized in a standard 0.18- m triple-well CMOS process.
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CMOS High Power SPDT Switch using Multigate Structure
Abstract— A novel CMOS high power RF switch using the multi-gate structure in a 0.18-um triple-well CMOS process is designed, implemented, and characterized.
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First Silicon Switches For 3G Smartphones
RF Micro Devices, a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced recently that the Company has successfully qualified and released its first high power RF CMOS switch using high-resistivity silicon …
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First Silicon Switches For 3G Smartphones
RF Micro Devices, a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced recently that the Company has successfully qualified and released its first high power RF CMOS switch using high-resistivity silicon …
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A high-linearity inverse-mode SiGe BiCMOS RF switch
Compared to CMOS RF switches , higher dc power is dissipated in SiGe HBT switches due to the bias current flowing through the bipolar transistor in the ON state.
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CMOS large-signal substrate modeling for high-power RF switch design
An improved CMOS large-signal model including the substrate/triple-well characteristics has been proposed for the application in high power -handling of CMOS RF switch circuit.
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Mixed-signal 0.18&mgr;m CMOS and SiGe BiCMOS foundry technologies for ROIC applications
For cellular PA applications, a thick film SOI CMOS process has been used to integrate RF power amplifier (PA) controllers, high voltage CMOS for power management and RF high power switches for a cost effective die in the 0.5μm process node …
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http://www.scirp.org/journal/PaperDownload.aspx?DOI=10.4236/wet.2011.21003
In this paper, we present a comprehensive study S-parameter for the low- power , high speed DP4T DG RF CMOS switch .
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Author index
A High Dynamic Range CMOS RF Power Amplifier with a Switchable Transformer for Polar Transmitters (RTUP-21) 741 .
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A Review of Watt-Level CMOS RF Power Amplifiers
[145] Y. Kim, B. H. Ku, C. Park, D. H. Lee, and S. Hong, “A high dynamic range CMOS RF power amplifier with a switchable transformer for polar transmitters,” in RF Integr.