-
Supplier: Utmel Electronic Limited
Description: High Voltage PNP Bipolar Transistor
- IC(max): 150 milliamps
- VCEO: 300 volts
- PD: 150 milliwatts
- TJ: 150 C
-
Supplier: Newark, An Avnet Company
Description: High Voltage PNP Bipolar Transistor / REEL
-
Supplier: Solid State Devices, Inc.
Description: reputation has been built upon our unsurpassed technology and quality in the areas of high density/high power and high voltage discrete semiconductors and modules.
- Features: Other
- Polarity: PNP
-
-
Supplier: Nexperia B.V.
Description: PNP high-voltage transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. NPN complement: BF722 Features and benefits Low feedback capacitance Applications General purpose high voltage circuits
- Features: Other
- Polarity: PNP
- Package Type: SOT223
-
Supplier: Nexperia B.V.
Description: PNP high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PMBTA42 Features and benefits Low current (max. 100 mA) High voltage (max. 300 V) Applications Telephony Professional communication equipment
- Features: Other
- Polarity: PNP
- Package Type: SOT23
-
Supplier: ROHM Semiconductor USA, LLC
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
- Package Type: SOT89
-
Supplier: Newark, An Avnet Company
Description: HIGH VOLTAGE TRANSISTOR, PNP, -45V; Transistor Polarity:PNP; Collector Emitter Voltage Max:45V; Continuous Collector Current:1A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:150MHz RoHS
-
Supplier: Newark, An Avnet Company
Description: HIGH VOLTAGE TRANSISTOR, PNP, -15V; Transistor Polarity:PNP; Collector Emitter Voltage Max:15V; Continuous Collector Current:3A; Power Dissipation:2W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Transition Frequency:100MHz RoHS
-
Supplier: Solid State Devices, Inc.
Description: reputation has been built upon our unsurpassed technology and quality in the areas of high density/high power and high voltage discrete semiconductors and modules.
- Features: Other
- Polarity: PNP
-
Supplier: MACOM
Description: MACOMs product portfolio of high reliability semiconductors for the military, defense, satellite and aerospace industries includes: Rectifiers, Switching diodes, Zener diodes, Temperature compensated zeners, Current regulators, Transient voltage suppressors, Silicon controlled
- hfe: 30 to 18,000
- VCBO: 40 to 120 volts
- IC(max): 1,000 to 20,000 milliamps
- Features: General Purpose BJT, Other
-
Supplier: Newark, An Avnet Company
Description: HIGH GAIN TRANSISTOR, PNP, -60V; Transistor Polarity:PNP; Collector Emitter Voltage Max:60V; Continuous Collector Current:2A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:140MHz RoHS Compliant: Yes
-
Supplier: ROHM Semiconductor GmbH
Description: BSS63A is a SOT-23 package Transistor for high voltage amplifier.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
- Package Type: SOT23
-
Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // High Voltage Transistor // BFN39
- IC(max): 30 to 200 milliamps
- VCEO: 300 volts
- VCBO: 300 volts
- fT: 100 MHz
-
Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, HIGH VOLTAGE; TO-92; PNP; -300VDC; -300VDC; -5.0VDC; -55C; +150C
-
Supplier: ROHM Semiconductor GmbH
Description: 2SARA41C is a transistor for high-voltage amplifier. Complementary is the 2SCRC41C/2SC4102U3
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
- Package Type: SOT23
-
Supplier: Allied Electronics, Inc.
Description: Silicon Transistor, PNP Transistor Type, -200 V Collector to Emitter Voltage -65 to +200 °C operating temperature range High voltage silicon epitaxial planar transistors designed for use in consumer and industrial line-operated applications.
-
Supplier: Allied Electronics, Inc.
Description: Germanium PNP Transistor Audio Power Amplifier, High Current Switch Low Collector-Emitter Saturation Voltage: VCE (sat) == 0.5V (Max) @ IC == 5 A The NTE179 is a PNP type germainum transistor in a TO3 type case designed for high-current switching
-
Supplier: ROHM Semiconductor USA, LLC
Description: 2SAR512P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier.
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, PNP, Power MOSFET
- Package Type: SOT89
-
Supplier: Tri-Tronics Company, Inc.
Description: For documentation and other SMARTEYE® models, please see our SMARTEYE® Marketing Page. Specifications SUPPLY VOLTAGE: 12 to 24 VDC Polarity Protected CURRENT REQUIREMENTS: 75 milliamps (exclusive of load) OUTPUT TRANSISTORS: (1) NPN and (1) PNP sensor output transistors
- Operating Distance: 7 to 240 inch
- Operating Temperature: -40 to 158 F
- Electrical Output: Current
- Features: DC Powered, Photoelectric Sensors
-
Supplier: Tri-Tronics Company, Inc.
Description: For documentation and other SMARTEYE® models, please see our SMARTEYE® Marketing Page. Specifications SUPPLY VOLTAGE: 12 to 24 VDC Polarity Protected CURRENT REQUIREMENTS: 75 milliamps (exclusive of load) OUTPUT TRANSISTORS: (1) NPN and (1) PNP sensor output transistors
- Operating Distance: 7 to 240 inch
- Operating Temperature: -40 to 158 F
- Electrical Output: Current
- Features: DC Powered, Photoelectric Sensors
-
Supplier: ROHM Semiconductor GmbH
Description: 2SAR552P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier.
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, PNP, Power MOSFET
- Packing Method: Tape Reel
-
Supplier: Tri-Tronics Company, Inc.
Description: For documentation and other SMARTEYE® models, please see our SMARTEYE® Marketing Page. Specifications SUPPLY VOLTAGE: 12 to 24 VDC Polarity Protected CURRENT REQUIREMENTS: 75 milliamps (exclusive of load) OUTPUT TRANSISTORS: (1) NPN and (1) PNP sensor output transistors
- Operating Distance: 7 to 240 inch
- Operating Temperature: -40 to 158 F
- Electrical Output: Current
- Features: DC Powered, Photoelectric Sensors
-
Supplier: ROHM Semiconductor GmbH
Description: 2SAR514P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier.
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, PNP, Power MOSFET
- Packing Method: Tape Reel
-
Supplier: Tri-Tronics Company, Inc.
Description: For documentation and other SMARTEYE® models, please see our SMARTEYE® Marketing Page. Specifications SUPPLY VOLTAGE: 12 to 24 VDC Polarity Protected CURRENT REQUIREMENTS: 75 milliamps (exclusive of load) OUTPUT TRANSISTORS: (1) NPN and (1) PNP sensor output transistors
- Operating Distance: 7 to 240 inch
- Operating Temperature: -40 to 158 F
- Electrical Output: Current
- Features: DC Powered, Photoelectric Sensors
-
Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT PNP Transistor High Voltage
- Features: Bipolar RF Transistors
-
Supplier: RS Components, Ltd.
Description: PNP High-Voltage Amplifier Transistor
- Features: General Purpose BJT, Other
- Polarity: PNP
- Package Type: SOT323
-
Supplier: Infineon Technologies AG
Description: PNP Silicon AF Transistor Array Summary of Features High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated Transistor with good matching in on package Pb-free (RoHS compliant) package Qualified according AEC Q101 Potential
- IC(max): 500 milliamps
- VCEO: 45 volts
- VCBO: 50 volts
- fT: 200 MHz
-
Description: HIGH VOLTAGE TRANSISTOR PNP
- Packing Method: Bulk Pack
- Features: General Purpose BJT, Other
-
Supplier: Acme Chip Technology Co., Limited
Description: HIGH VOLTAGE TRANSISTOR PNP
- Packing Method: Bulk Pack
- Features: General Purpose BJT, Other
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: Bipolar Transistors - BJT PNP High Voltage Product overview: BFW43 from STMicroelectronics is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and
- IC(max): 100 milliamps
- VCBO: 150 volts
- fT: 50 MHz
- PD: 400 milliwatts
-
Supplier: ODG (Origin Data Global)
Description: BFN27 - PNP SILICON HIGH-VOLTAGE
- IC(max): 200 milliamps
- VCEO: 300 volts
- Operating Frequency: 100 MHz
- Output Power: 0.36 watts
-
Supplier: Rochester Electronics
Description: HIGH VOLTAGE TRANSISTOR PNP SILICON
- Features: Other
- Polarity: PNP
- Package Type: SOT223
-
Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 037987-ST93003 Packaging: Bulk Mounting: Through Hole Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SOT-32-3 Maximum Current Collector: 1.5A VCEO Maximum
- Features: Other
- Polarity: PNP
- Package Type: SOT3
-
Description: wavelength: 640nm/525nm/470mm) > Current consumption: Power＜850mW(Supply voltage is 24V、Consumption current＜35mA) > Output type:PNP open-collector transistor:the max inflow current is 50mA;The applied voltage is below 30VDC(Between output and +V);Residual voltage
- Sensing Range: 28 mm
- Output Options: Analog Current, Analog Voltage
- Application Type: Color Mark Detection
- Input Voltage: DC input
Find Suppliers by Category Top
Featured Products Top
-
The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
Electric mobility needs batteries that unlock more value from every cell, not simply more battery capacity. With the ONE Inverter concept, engineering specialist IAV and semiconductor specialist Nexperia are exploring a new approach to high-voltage architectures. The concept enables more (read more)
Browse Transistors Datasheets for Nexperia B.V. -
High-power electronic systems require semiconductor solutions that can handle high voltage, high current, and demanding operating conditions while maintaining efficiency and reliability. Engineers need power devices with low energy losses and stable switching performance to (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Win Source Electronics -
Overview of RF High?Speed Rotary Joint Slip Ring Our high?speed radio frequency rotary joints are precision coaxial microwave components designed for 360° uninterrupted rotating equipment, solving stable high?frequency signal transmission challenges in rotating (read more)
Browse RF Transistors Datasheets for JiuJiang Ingiant Technology Co., Ltd. -
Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
Browse Transistors Datasheets for Win Source Electronics -
Transition Frequency (fT): 300MHz, excellent for high-frequency applications Complementary PNP Transistor: SMMBT3906LT3G for push (read more)
Browse Transistors Datasheets for Win Source Electronics -
In this demo, Nexperia's high power Bipolar Junction Transistors (BJT) are utilized as a high voltage current source in an LED lighting application. The set-up shows the well established discrete solution - a combination of precision shunt (read more)
Browse Power Bipolar Transistors Datasheets for Nexperia B.V. -
The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
Browse Transistors Datasheets for Win Source Electronics -
turn-off losses, 175?°C operation, & a 5?μs short-circuit withstand time. Designed for hard-switching, high-voltage, high-frequency applications, they are ideal for industrial inverters, servo drives, small motor drives, welding, induction heating, & ESS. (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Nexperia B.V. -
The Microchip 2N2907AUB is a high-performance PNP bipolar transistor offering excellent flexibility for multiple electronic applications. With its robust 600mA collector current capacity and a collector-emitter voltage (VCEO) of 60V, this component is designed to (read more)
Browse RF Transmitters Datasheets for LIXINC Electronics Co., Limited
More Information Top
Indicates content that may require registration and/or purchase.
-
http://www.nxp.com/documents/data_sheet/BF421_423.pdf
PNP high voltage transistors .
-
Page 4. Semiconductor parts with 096 in root number
500 V, 1 A high voltage PNP transistor .
-
New Components for New Design of Monolithic Linear Circuit - RGB - Output Stage
3) Use of a P" step in the high voltage PNP transistors to obtain a high breakdown voltage ( > 220V), good h .
-
BF823 Datasheet
; ; PNP high voltage transistors .
-
Page 4. Semiconductor parts with 485 in root number
NPN/ PNP high voltage transistors .
-
BF823 datasheet - PNP high voltage transistors : Datasheets for Electronic Components and Semiconductors
PNP high voltage transistors .
-
Page 8. Semiconductor parts with 821 in root number
PNP high voltage transistors .
-
KSP94 datasheet - High voltage PNP transistor, collector-emitter=400V, collector power dissipation=625 mW : Datasheets for Electronic Components and Semiconduc...
High voltage PNP transistor , collector-emitter=400V, collector power dissipation=625 mW .
-
SSDI 2N5151 Series Datasheets. SFT6900, 2N5151, 2N5153, SFT501, SFT503 Datasheet.
500 V, 3 A high voltage PNP transistor in 3-pin TO package.
-
Page 3. Semiconductor parts with 690 in root number
500 V, 3 A high voltage PNP transistor .